Claims
- 1. A process for forming a bulk coating of Nb.sub.3 Ge bonded to a copper substrate which comprises (a) uniformly entraining NbCl.sub.5 powder in an argon gas stream, (b) forming a stream of argon gas and GeCl.sub.4 vapor, (c) mixing said streams together and with hydrogen in a molar ratio which on the coreduction of said NbCl.sub.5 and GeCl.sub.4 by said hydrogen produces Nb.sub.3 Ge, (d) heating the resulting gas mixture containing said entrained NbCl.sub.5 powder to a temperature of 400.degree. to 600.degree. C., (e) flowing the resulting heated gas-vapor mixture over said copper substrate, and (f) heating said copper substrate and said gas-vapor mixture to a temperature greater than 650.degree. C. to chemically vapor deposit Nb.sub.3 Ge on said copper substrate.
- 2. The process of claim 1 wherein, prior to said chemical vapor deposition, hydrogen is flowed over said copper substrate for a time and at a temperature sufficient to reduce surface oxides on said substrate.
- 3. The process of claim 2 wherein said NbCl.sub.5 powder is screened to -100 mesh or less and is vaporized at a temperature of about 500.degree. C.
- 4. The process of claim 1 wherein the Nb:Ge molar ratio in said mixture of NbCl.sub.5 vapor, GeCl.sub.4 vapor, hydrogen, and argon is in the range of 2.3-3.0:1 and said chemical vapor deposition occurs at a temperature in the range of about 890.degree. to 900.degree. C.
- 5. An article of manufacture which comprises Nb.sub.3 Ge bonded to a copper substrate made in accordance with the process of claim 1.
- 6. The article of manufacture of claim 5 wherein said Nb.sub.3 Ge has the A-15 structure and a transition temperature in excess of 20.degree. K.
- 7. The article of manufacture of claim 6 wherein said Nb.sub.3 Ge is diffusion bonded to said copper.
- 8. In a process for the chemical vapor deposition of Nb.sub.3 Ge on a metallic substrate by the coreduction of NbCl.sub.5 vapor and GeCl.sub.4 vapor by hydrogen at a temperature greater than 650.degree. C., the improvement comprising (a) uniformly entraining NbCl.sub.5 powder in an inert gas stream, and (b) completely vaporizing the resulting entrained NbCl.sub.5 powder uniformly at a temperature between 400.degree. and 600.degree. C.; mixing hydrogen gas and GeCl.sub.4 vapor with said NbCl.sub.5 powder entrained in said inert gas and heating the resulting gas mixture to a temperature of 400.degree. to 600.degree. C. to vaporize said NbCl.sub.5 powder; flowing said heating gas mixture over a copper substrate and heating said substate and said gas mixture to a temperature greater than 650.degree. C.
BACKGROUND OF THE INVENTION
The invention described herein was made in the course of, or under, a contract with the U.S. Atomic Energy Commission.
US Referenced Citations (11)
Non-Patent Literature Citations (1)
Entry |
Chemical Abstracts 78 (1973) 89966, Abstract of Valueva et al. Izv. Akad. Nauk SSSR Neorg. Mater. 1972, 8(12) 2083-8. _ |