Claims
- 1. The process of forming a high field A-15 intermetallic compound which comprises the steps of combining and then coreducing a layer of first metal from the group consisting of Al, Ga, Ge, and Sn with a layer of a second metal from the group consisting of Nb and V, said coreduction being carried out at a temperature below the temperature of reaction of said two metals until the first metal layer is less than 1 .mu.m, then heating said coreduced layers to a temperature to react all of said first metal with said second metal to form a thin layer (less than 1 .mu.m) of said A-15 compound, the amount of second metal being greater than that necessary to react with all of the first metal, limiting the extent of the reaction so as to limit the thickness of pure or nearly pure unreacted second metal so that it is about equal to the thickness of the compound layer whereby unreacted second metal layer remains in contact with said A-15 compound layer, thereafter reducing the composite second metal and A-15 compound layers until each said layer is less than 1000 A.degree. thick.
- 2. The process of claim 1 wherein the first metal is Al and the second metal is Nb.
- 3. The process of claim 1 wherein the first metal is Sn and the second metal is Nb.
Parent Case Info
This invention relates to the production of improved superconductors.
This application is a Continuation-in-Part of Ser. No. 560,163, filed Jul. 31, 1990, now U.S. Pat. No. 5,160,550, which is a Continuation-in-Part of Ser. No. 540,193, filed Jun. 19, 1990, now U.S. Pat. No. 5,160,794, which is a Continuation-in-Part of Ser. No. 480,236, filed Feb. 15, 1990, now U.S. Pat. No. 5,158,620, which is a Continuation-in-Part of Ser. No. 363,634, filed Jun 8, 1989, now U.S. Pat. No. 4,925,741. This disclosures of those application is incorporated herein in their entirety.
US Referenced Citations (10)
Foreign Referenced Citations (1)
Number |
Date |
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45584 |
Feb 1982 |
EPX |
Continuation in Parts (1)
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Number |
Date |
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Parent |
560163 |
Jul 1990 |
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