Claims
- 1. An ultra-high-density data storage device comprising:
a storage medium; a nanometer-scaled storage area in the storage medium; a primary energy source positioned proximate to the storage area; and a secondary energy source positioned close to the storage area.
- 2. The ultra-high-density data storage device of claim 1, wherein the storage medium comprises at least one of a semiconductor, a diode and a photodiode with a fluorescent material.
- 3. The ultra-high-density data storage device of claim 1, wherein the primary energy source comprises at least one of an AFM probe tip, a Spindt electron emitter and a flat electron emitter.
- 4. The ultra-high-density data storage device of claim 1, wherein the primary energy source comprises silicon.
- 5. The ultra-high-density data storage device of claim 1, wherein the primary energy source directly contacts the storage medium.
- 6. The ultra-high-density data storage device of claim 1, wherein the secondary energy source comprises at least one of a resistive element, a light source and a heat source.
- 7. The ultra-high-density data storage device of claim 6, wherein the secondary energy source comprises a resistive element positioned in contact with the storage medium.
- 8. The ultra-high-density data storage device of claim 6, wherein the heat source comprises a heat lamp.
- 9. A method of storing and retrieving data comprising:
providing a storage medium having a nanometer-scaled storage area; reading from the storage medium by locally energizing the storage medium; and writing to the storage medium by providing energy to a widespread region of the storage medium.
- 10. The method of claim 9, wherein the providing step comprises providing at least one of a semiconductor, a diode and a photodiode with a fluorescent material.
- 11. The method of claim 9, wherein the writing step comprises using at least one of a resistive element, a light source and a heat source to provide the energy.
- 12. The method of claim 11, wherein the writing step comprises providing a heat lamp as the heat source.
- 13. The method of claim 11, wherein the writing step comprises providing a resistive element in direct contact with the storage medium.
- 14. The method of claim 9, wherein the reading step comprises providing at least one of an AFM probe tip, a Spindt emitter and a flat emitter.
- 15. The method of claim 9, wherein the reading step comprises providing a silicon primary energy source.
- 16. The method of claim 9, wherein the writing step comprises locally energizing a single storage area.
- 17. The method of claim 9, wherein the reading step includes providing a primary energy source in proximity to the storage medium.
- 18. The method of claim 17, wherein the reading step includes providing a primary energy source in direct contact with the storage medium
- 19. The method of claim 9, wherein the writing step includes providing a secondary energy source close to the storage medium.
- 20. The method of claim 9, wherein the writing step includes changing a storage area from a non-modified storage area to a modified storage area.
RELATED APPLICATIONS
[0001] This application is related to U.S. patent application to Gary Gibson entitled “AFM VERSION OF DIODE- AND CATHODOCONDUCTIVITY- AND CATHODOLUMINESCENCE-BASED DATA STORAGE MEDIA”, application Ser. No. 09/726,621 filed Dec. 1, 2000, to U.S. patent application to Gary Gibson entitled “METHODS FOR CONDUCTING CURRENT BETWEEN A SCANNED-PROBE AND STORAGE MEDIUM”, application Ser. No. 09/783,008 filed Feb. 15, 2001, and to U.S. patent application to Gary Gibson entitled “CURRENT DIVIDER-BASED STORAGE MEDIUM”, filed concurrently herewith. These applications are incorporated herein in their entirety by reference.