SURFACE ACOUSTIC WAVE ELECTROACOUSTIC DEVICE FOR REDUCED TRANSVERSAL MODES

Abstract

Aspects of the disclosure relate to an electroacoustic device that includes a piezoelectric material and an electrode structure. The electrode structure includes a first busbar and a second busbar. The electrode structure further includes electrode fingers arranged in an interdigitated manner and including a first plurality of fingers connected to the first busbar and a second plurality of fingers connected to the second busbar. A first distance between the first busbar and the second plurality of fingers and a second distance between the second busbar and the first plurality of fingers both being less than a pitch of the electrode fingers. The electrode fingers have a central region with a first trap region and a second trap region respectively located on boundaries of the central region. A structural characteristic of the electroacoustic device is different in the first trap region and the second trap region relative to the central region.

Description

FIELD

The present disclosure relates generally to surface acoustic wave (SAW) electroacoustic devices such as SAW resonators and in particular to inter-digitated transducer (IDT) electrode structures of the electroacoustic devices that reduce transversal acoustic wave modes.

BACKGROUND

Electronic devices include traditional computing devices such as desktop computers, notebook computers, tablet computers, smartphones, wearable devices like a smartwatch, internet servers, and so forth. These various electronic devices provide information, entertainment, social interaction, security, safety, productivity, transportation, manufacturing, and other services to human users. These various electronic devices depend on wireless communications for many of their functions. Wireless communication systems and devices are widely deployed to provide various types of communication content such as voice, video, packet data, messaging, broadcast and so on. These systems may be capable of supporting communication with multiple users by sharing the available system resources (e.g., time, frequency, and power). Examples of such systems include code division multiple access (CDMA) systems, time division multiple access (TDMA) systems, frequency division multiple access (FDMA) systems, and orthogonal frequency division multiple access (OFDMA) systems, (e.g., a Long Term Evolution (LTE) system, or a New Radio (NR) system).

Wireless communication transceivers used in these electronic devices generally include multiple radio frequency (RF) filters for filtering a signal for a particular frequency or range of frequencies. Electroacoustic devices (e.g., “acoustic filters”) are used for filtering high-frequency (e.g., generally greater than 100 MHz) signals in many applications. Using a piezoelectric material as a vibrating medium, acoustic resonators operate by transforming an electrical signal wave that is propagating along an electrical conductor into an acoustic wave that is propagating via the piezoelectric material. The acoustic wave propagates at a velocity having a magnitude that is significantly less than that of the propagation velocity of the electromagnetic wave. Generally, the magnitude of the propagation velocity of a wave is proportional to a size of a wavelength of the wave. Consequently, after conversion of an electrical signal into an acoustic signal, the wavelength of the acoustic signal wave is significantly smaller than the wavelength of the electrical signal wave. The resulting smaller wavelength of the acoustic signal enables filtering to be performed using a smaller filter device. This permits acoustic resonators to be used in electronic devices having size constraints, such as the electronic devices enumerated above (e.g., particularly including portable electronic devices such as cellular phones).

As the number of frequency bands used in wireless communications increases and as the desired frequency band of filters widen, the performance of acoustic filters increases in importance to reduce losses and increase overall performance of electronic devices. Acoustic filters with improved performance are therefore sought after.

SUMMARY

In one aspect of the disclosure, an electroacoustic device is provided. The electroacoustic device includes a piezoelectric material. The electroacoustic device further includes an electrode structure including a first busbar and a second busbar. The electrode structure further includes electrode fingers arranged in an interdigitated manner and including a first plurality of fingers connected to the first busbar and a second plurality of fingers connected to the second busbar. A first distance between the first busbar and the second plurality of fingers and a second distance between the second busbar and the first plurality of fingers both are less than a pitch of the electrode fingers. The electrode fingers have a central region with a first trap region and a second trap region respectively located on boundaries of the central region. A structural characteristic of the electroacoustic device is different in the first trap region and the second trap region relative to the central region.

In another aspect of the disclosure, a method for filtering an electrical signal via an electroacoustic device including a piezoelectric material and an interdigital transducer is provided. The method includes providing the electrical signal to a terminal of the interdigital transducer. The method further includes reducing a transversal acoustic wave mode via a first busbar and a second busbar having a plurality of interdigitated electrode fingers of the interdigital transducer connected to either of the first busbar or the second busbar. A first distance between the first busbar and a first portion of the electrode fingers unconnected to the first busbar and a second distance between the second busbar and a second portion of the electrode fingers unconnected to the second busbar both are less than a pitch of the plurality of interdigitated electrode fingers.

In yet another aspect of the disclosure, a method for forming an electroacoustic device is provided. The method includes forming a layer of a piezoelectric material. The method further includes forming an electrode structure on or above the piezoelectric material. Forming the electrode structure includes forming a first busbar and a second busbar. Forming the electrode structure further includes forming electrode fingers arranged in an interdigitated manner, where forming the electrode fingers comprises forming a first plurality of fingers connected to the first busbar and forming a second plurality of fingers connected to the second busbar. A first distance between the first busbar and the second plurality of fingers and a second distance between the second busbar and the first plurality of fingers are both less than a pitch of the electrode fingers. The electrode fingers formed to have a central region and formed to have a first trap region and a second trap region respectively located on boundaries of the central region. The method further includes adjusting or forming a structural characteristic of the electroacoustic device in the first and second trap regions to reduce an acoustic velocity.

In yet another aspect of the disclosure, an electroacoustic device is provided. The electroacoustic device includes a substrate and a piezoelectric material including Lithium tantalate disposed on the substrate. The electroacoustic device further includes an electrode structure disposed on the piezoelectric material and including a first busbar and a second busbar. The electrode structure further includes electrode fingers arranged in an interdigitated manner and including a first plurality of fingers connected to the first busbar and a second plurality of fingers connected to the second busbar. A first distance between the first busbar and the second plurality of fingers and a second distance between the second busbar and the first plurality of fingers both are less than a pitch of the electrode fingers. The electrode fingers have a central region with a first trap region and a second trap region respectively located on boundaries of the central region. A structural characteristic of the electroacoustic device is different in the first trap region and the second trap region relative to the central region.

In yet another aspect of the disclosure, an electroacoustic device is provided. The electroacoustic device includes a piezoelectric material comprising Lithium tantalate disposed on a substrate. The electroacoustic device further includes an electrode structure disposed on the piezoelectric material and including a first busbar and a second busbar. The electrode structure further includes electrode fingers arranged in an interdigitated manner and comprising a first plurality of fingers connected to the first busbar and a second plurality of fingers connected to the second busbar. The electrode fingers have a central region with a first trap region and a second trap region respectively located on boundaries of the central region. A structural characteristic of the electroacoustic device is different in the first trap region and the second trap region relative to the central region to reduce an acoustic velocity of the electroacoustic device in a region defined by the first trap region and the second trap region relative to a region defined by the central region. The acoustic velocity of the electroacoustic device in a region defined by the first busbar and the second busbar is higher than in the region defined by central region.

In yet another aspect of the disclosure, an electroacoustic device is provided. The electroacoustic device includes a piezoelectric material comprising Lithium tantalate disposed on a substrate. The electroacoustic device further includes an electrode structure disposed on the piezoelectric material and including a first busbar and a second busbar. The electrode structure further includes electrode fingers arranged in an interdigitated manner and including a first plurality of fingers connected to the first busbar and a second plurality of fingers connected to the second busbar. The electrode fingers have a central region with a first trap region and a second trap region respectively located on boundaries of the central region. A structural characteristic of the electroacoustic device is different in the first trap region and the second trap region relative to the central region to reduce an acoustic velocity of the electroacoustic device in a region defined by the first trap region and the second trap region relative to a region defined by the central region. A first distance between the first busbar and the second plurality of fingers and a second distance between the second busbar and the first plurality of fingers both are sufficiently small such that the first busbar and the second busbar function as a barrier region to reduce transversal acoustic modes. The acoustic velocity of the electroacoustic device in a region defined by the first busbar and the second busbar is higher than in the region defined by central region.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a diagram of a perspective view of an example of an electroacoustic device.

FIG. 1B is a diagram of a side view of the electroacoustic device of FIG. 1A.

FIG. 2A is a diagram of a top view of an example of an electrode structure of an electroacoustic device.

FIG. 2B is a diagram of a top view of another example of an electrode structure of an electroacoustic device.

FIG. 3A is a diagram of a perspective view of another example of an electroacoustic device.

FIG. 3B is a diagram of a side view of the electroacoustic device of FIG. 3A.

FIG. 4 is a diagram of a portion of an electrode structure of an electroacoustic device aligned with a plot illustrating acoustic velocity profiles in different regions of the electroacoustic device.

FIGS. 5A and 5B are diagrams of examples of electrode structures that illustrate examples of different implementations of trap regions as defined with reference to FIG. 4.

FIG. 6 is a diagram of an example of an electrode structure of an electroacoustic device that reduces transversal acoustic modes according to aspects of the present disclosure.

FIGS. 7A and 7B are diagrams of examples of implementations of the electrode structure of FIG. 6 according to certain aspects of the present disclosure.

FIG. 8 is a plot illustrating electroacoustic device admittance values versus frequency for an electroacoustic device including the electrode structure of FIG. 6 versus an alternative electrode structure according to certain aspects of the present disclosure.

FIG. 9 is a flow chart illustrating an example of a method for forming an electroacoustic device including a piezoelectric material and the electrode structure of FIG. 6 according to certain aspects of the present disclosure.

FIG. 10 is a schematic diagram of an electroacoustic filter circuit that may include the electrode structure of FIG. 6.

FIG. 11 is a functional block diagram of at least a portion of an example of a simplified wireless transceiver circuit in which the filter circuit of FIG. 10 may be employed.

FIG. 12 is a diagram of an environment that includes an electronic device that includes a wireless transceiver such as the transceiver circuit of FIG. 11.

DETAILED DESCRIPTION

The detailed description set forth below in connection with the appended drawings is intended as a description of exemplary implementations and is not intended to represent the only implementations in which the invention may be practiced. The term “exemplary” used throughout this description means “serving as an example, instance, or illustration,” and should not necessarily be construed as preferred or advantageous over other exemplary implementations. The detailed description includes specific details for the purpose of providing a thorough understanding of the exemplary implementations. In some instances, some devices are shown in block diagram form. Drawing elements that are common among the following figures may be identified using the same reference numerals.

Electroacoustic devices such as surface acoustic wave (SAW) resonators, which employ electrode structures on a surface of a piezoelectric material, are being designed to cover more frequency ranges (e.g., 500 MHz to 6 GHz), to have higher bandwidths (e.g., up to 25%), and to have improved efficiency and performance. In general, certain SAW resonators are designed to cause propagation of an acoustic wave in a particular direction through the piezoelectric material (e.g., main acoustic wave mode). However, due to the nature of the particular piezoelectric material used and the way the piezoelectric material is excited by the electrode structure, at least some undesired acoustic wave modes in other directions may be generated. For example, transversal acoustic wave modes that are transverse to the direction of the main (e.g., fundamental) acoustic wave mode may be excited in the piezoelectric material. These transversal acoustic wave modes may be undesirable and have an adverse impact on filter performance (e.g., introducing ripples in the passband of the filter). By adjusting characteristics of the electrode structure, acoustic velocities in various transversal regions may be controlled in a manner to reduce transversal acoustic wave modes. The characteristics that are adjusted may depend on the type of piezoelectric material and other characteristics of the SAW resonator. Aspects of the present disclosure are directed to particular electrode structure configurations that reduce transversal acoustic wave modes. In particular, the electrode structure configurations described herein include defining a small gap between busbars and unconnected electrode fingers, where due to coupling between the piezoelectric material and the busbars, the busbars may define a region of the piezoelectric material to have an acoustic velocity sufficiently high to provide a barrier region that reduces transversal modes.

FIG. 1A is a diagram of a perspective view of an example of an electroacoustic device 100. The electroacoustic device 100 may be configured as or be a portion of a SAW resonator. In certain descriptions herein, the electroacoustic device 100 may be referred to as a SAW resonator. However, there may be other electroacoustic device types that may be constructed based on the principles described herein. The electroacoustic device 100 includes an electrode structure 104, that may be referred to as an interdigital transducer (IDT), on the surface of a piezoelectric material 102. The electrode structure 104 generally includes first and second comb shaped electrode structures (conductive and generally metallic) with electrode fingers extending from two busbars towards each other arranged in an interlocking manner in between two busbars (e.g., arranged in an interdigitated manner). An electrical signal excited in the electrode structure 104 (e.g., applying an AC voltage) is transformed into an acoustic wave 106 that propagates in a particular direction via the piezoelectric material 102. The acoustic wave 106 is transformed back into an electrical signal and provided as an output. In many applications, the piezoelectric material 102 has a particular crystal orientation such that when the electrode structure 104 is arranged relative to the crystal orientation of the piezoelectric material 102, the acoustic wave mainly propagates in a direction perpendicular to the direction of the fingers (e.g., parallel to the busbars).

FIG. 1B is a diagram of a side view of the electroacoustic device 100 of FIG. 1A along a cross-section 107 shown in FIG. 1A. The electroacoustic device 100 is illustrated by a simplified layer stack including a piezoelectric material 102 with an electrode structure 104 disposed on the piezoelectric material 102. The electrode structure 104 is conductive and generally formed from metallic materials. The piezoelectric material may be formed from a variety of materials such as quartz, lithium tantalate (LiTaO3), lithium niobite (LiNbO3), doped variants of these, or other piezoelectric materials. It should be appreciated that more complicated layer stacks including layers of various materials may be possible within the stack. For example, optionally, a temperature compensation layer 108 denoted by the dashed lines may be disposed above the electrode structure 104. The piezoelectric material 102 may be extended with multiple interconnected electrode structures disposed thereon to form a multi-resonator filter or to provide multiple filters. While not illustrated, when provided as an integrated circuit component, a cap layer may be provided over the electrode structure 104. The cap layer is applied so that a cavity is formed between the electrode structure 104 and an under surface of the cap layer. Electrical vias or bumps that allow the component to be electrically connected to connections on a substrate (e.g., via flip-chip or other techniques) may also be included.

FIG. 2A is a diagram of a top view of an example of an electrode structure 204a of an electroacoustic device 100. The electrode structure 204a has an IDT 205 that includes a first busbar 222 (e.g., first conductive segment or rail) electrically connected to a first terminal 220 and a second busbar 224 (e.g., second conductive segment or rail) spaced from the first busbar 222 and connected to a second terminal 230. A plurality of conductive fingers 226 are connected to either the first busbar 222 or the second busbar 224 in an interdigitated manner. Fingers 226 connected to the first busbar 222 extend towards the second busbar 224 but do not connect to the second busbar 224 so that there is a small gap between the ends of these fingers 226 and the second busbar 224. Likewise, fingers 226 connected to the second busbar 224 extend towards the first busbar 222 but do not connect to the first busbar 222 so that there is a small gap between the ends of these fingers 226 and the first busbar 222.

In the direction along the busbars, there is an overlap region including a central region where a portion of one finger overlaps with a portion of an adjacent finger as illustrated by the central region 225. This central region 225 including the overlap may be referred to as the aperture, track, or active region where electric fields are produced between fingers 226 to cause an acoustic wave to propagate in this region of the piezoelectric material 102. The periodicity of the fingers 226 is referred to as the pitch of the IDT. The pitch may be indicted in various ways. For example, in certain aspects, the pitch may correspond to a magnitude of a distance between fingers in the central region 225. This distance may be defined, for example, as the distance between center points of each of the fingers (and may be generally measured between a right (or left) edge of one finger and the right (or left) edge of an adjacent finger when the fingers have uniform thickness). In certain aspects, an average of distances between adjacent fingers may be used for the pitch. The frequency at which the piezoelectric material vibrates is a self-resonance (also called a “main-resonance”) frequency of the electrode structure 204a. The frequency is determined at least in part by the pitch of the IDT 205 and other properties of the electroacoustic device 100.

The IDT 205 is arranged between two reflectors 228 which reflect the acoustic wave back towards the IDT 205 for the conversion of the acoustic wave into an electrical signal via the IDT 205 in the configuration shown and to prevent losses (e.g., confine and prevent escaping acoustic waves). Each reflector 228 has two busbars and a grating structure of conductive fingers that each connect to both busbars. The pitch of the reflector may be similar to or the same as the pitch of the IDT 205 to reflect acoustic waves in the resonant frequency range. But many configurations are possible.

When converted back to an electrical signal, the converted electrical signal may be provided as an output such as one of the first terminal 220 or the second terminal 230 while the other terminal may function as an input.

A variety of electrode structures are possible. FIG. 2A may generally illustrate a one-port configuration. Other 2-port configurations are also possible. For example, the electrode structure 204a may have an input IDT 205 where each terminal 220 and 230 functions as an input. In this event, an adjacent output IDT (not illustrated) that is positioned between the reflectors 228 and adjacent to the input IDT 205 may be provided to convert the acoustic wave propagating in the piezoelectric material 102 to an electrical signal to be provided at output terminals of the output IDT.

FIG. 2B is a diagram of a top view of another example of an electrode structure 204b of an electroacoustic device 100. In this case, a dual-mode SAW (DMS) electrode structure 204b is illustrated that is a structure which may induce multiple resonances. The electrode structure 204b includes multiple IDTs along with reflectors 228 connected as illustrated. The electrode structure 204b is provided to illustrate the variety of electrode structures that principles described herein may be applied to including the electrode structures 204a and 204b of FIGS. 2A and 2B.

It should be appreciated that while a certain number of fingers 226 are illustrated, the number of actual fingers and lengths and width of the fingers 226 and busbars may be different in an actual implementation. Such parameters depend on the particular application and desired frequency of the filter. In addition, a SAW filter may include multiple interconnected electrode structures each including multiple IDTs to achieve a desired passband (e.g., multiple interconnected resonators or IDTs to form a desired filter transfer function).

FIG. 3A is a diagram of a perspective view of another example of an electroacoustic device 300. The electroacoustic device 300 (e.g., that may be configured as or be a part of a SAW resonator) is similar to the electroacoustic device 100 of FIG. 1A but has a different layer stack. In particular, the electroacoustic device 300 includes a thin piezoelectric material 302 that is provided on a substrate 310 (e.g., silicon). The electroacoustic device 300 may be referred to as a thin-film SAW resonator (TF-SAW) in some cases. Based on the type of piezoelectric material 302 used (e.g., typically having higher coupling factors relative to the electroacoustic device 100 of FIG. 1) and a controlled thickness of the piezoelectric material 302, the particular acoustic wave modes excited may be slightly different than those in the electroacoustic device 100 of FIG. 1A. Based on the design (thicknesses of the layers, and selection of materials, etc.), the electroacoustic device 300 may have a higher Q-factor as compared to the electroacoustic device 100 of FIG. 1A. The piezoelectric material 302, for example, may be Lithium tantalate (LiTa03) or some doped variant. Another example of a piezoelectric material 302 for FIG. 3 may be Lithium niobite (LiNbO3). In general, the substrate 310 may be substantially thicker than the piezoelectric material 302 (e.g., potentially on the order of 50 to 100 times thicker as one example—or more). The substrate 310 may include other layers (or other layers may be included between the substrate 310 and the piezoelectric material 302).

FIG. 3B is a diagram of a side view of the electroacoustic device 300 of FIG. 3A showing an exemplary layer stack (along a cross-section 307). In the example shown in FIG. 3B, the substrate 310 may include sublayers such as a substrate sublayer 310-1 (e.g., of silicon) that may have a higher resistance (e.g., relative to the other layers—high resistivity layer). The substrate 310 may further include a trap rich layer 310-2 (e.g., poly-silicon). The substrate 310 may further include a compensation layer (e.g., silicon dioxide (SiO₂) or another dielectric material) that may provide temperature compensation and other properties. These sub-layers may be considered part of the substrate 310 or their own separate layers. A relatively thin piezoelectric material 302 is provided on the substrate 310 with a particular thickness for providing a particular acoustic wave mode (e.g., as compared to the electroacoustic device 100 of FIG. 1A where the thickness of the piezoelectric material 102 may not be a significant design parameter beyond a certain thickness and may be generally thicker as compared to the piezoelectric material 302 of the electroacoustic device 300 of FIGS. 3A and 3B). The electrode structure 304 is positioned above the piezoelectric material 302. In addition, in some aspects, there may be one or more layers (not shown) possible above the electrode structure 304 (e.g., such as a thin passivation layer).

Based on the type of piezoelectric material, the thickness, and the overall layer stack, the coupling to the electrode structure 304 and acoustic velocities within the piezoelectric material in different regions of the electrode structure 304 may differ between different types of electroacoustic devices such as between the electroacoustic device 100 of FIG. 1A and the electroacoustic device 300 of FIGS. 3A and 3B.

With respect to the electroacoustic device 100 and electroacoustic device 300 of FIGS. 1A and 3A, one source of potential losses that are desirable to be reduced are spurious acoustic wave modes that may include transversal acoustic modes. These transversal acoustic wave modes may result in undesired ripples in the passband of the filter. In general, the electroacoustic devices are designed to confine or guide the acoustic wave in the central region 225 (e.g., active region as indicted in FIG. 2A) to avoid radiation into the bulk (e.g., in a z-direction that is perpendicular to the surface) or laterally. Confinement of the acoustic wave may lead to generation of a series of transversal acoustic wave modes (e.g., generally in a direction towards the busbars and more parallel to the fingers 226). In particular, the acoustic wave excited propagates perpendicular to the fingers 226 but also at certain angles to the main propagation direction which may correspond to various transversal acoustic wave modes. It is desirable to reduce these transversal acoustic wave modes as they lead to sharp, deep, dips in a filter passband when corresponding electroacoustic device tracks are electrically connected.

FIG. 4 is a diagram of a portion of an electrode structure 404 of an electroacoustic device aligned with a plot illustrating acoustic velocity profiles in different regions of the electroacoustic device. The electrode structure 404 of FIG. 4 shows a portion of an IDT 405 similar to that described with reference to FIG. 2A with a first busbar 422, a second busbar 424, and interdigitated fingers 426. As the angles and frequency position of the transversal acoustic wave modes depend on the directional acoustic wave velocity, in an aspect, the transversal velocity profile within the acoustic track can designed in such a way to reduce transversal acoustic wave modes and promote excitation of the main or fundamental mode. In particular, the electrode structure 404 (and potentially other layers) can be adjusted in different regions of the electrode structure 404 to adjust the transversal velocity profile within the acoustic track to reduce transversal acoustic modes (e.g., effectively forming a transversal acoustic waveguide). In certain aspects, an acoustic velocity may correspond to an acoustic velocity of the fundamental mode of the electroacoustic device, although the velocity may be understood more generally in certain respects to capture or relate to different modes.

FIG. 4 illustrates different regions of the electrode structure 404 that may be designed or structurally altered to adjust the transversal velocity profile. As described with respect to FIG. 2A, a central region 425 (or active track region or aperture) is defined where interdigitated fingers overlap (e.g., in the direction parallel to the busbar) and is where the main or fundamental mode is generally intended and designed to propagate perpendicular to the fingers 426.

In an aspect, barrier regions 429 (e.g., gap regions) are defined outside the central region 425 that include regions between the first busbar 422 and fingers 426a connected to the opposite second busbar 424. More particularly, the barrier regions 429 include a first barrier region 429a and a second barrier region 429b. The first barrier region 429a is defined between the first busbar 422 and unconnected ends of a first set of fingers 426a connected to the second busbar 424. The second barrier region 429b is defined between the second busbar 424 and unconnected ends of a second set of fingers 426b connected to the first busbar 422. The barrier regions 429 may sometimes correspond to or be referred to as a transversal gap which is included in IDTs to separate metal structures of different potentials (i.e., separate fingers connected to opposite busbars where the busbars have different potentials).

To adjust the transversal velocity profile, the number of fingers per wavelength within the barrier regions 429 (e.g., one finger instead of the two fingers as illustrated in the central region 425) along with the distance or size of the barrier regions 429 are selected (and/or with adjustment of other characteristics within the barrier regions 429) so that there is a higher acoustic wave velocity, particularly higher than in the central region 425. The plot 440 to the right of the electrode structure 404 illustrates relative velocities of each region of the electrode structure 404 where the y-axis represents and is aligned with different regions of the electrode structure 404 along the direction the fingers 426 extend. As illustrated by line 450 (see dashed line portions), the acoustic velocity along the x-axis is higher in the barrier regions 429 as compared to the acoustic velocity in the central region 425 (e.g., active track). In general, as an acoustic wave may tend to propagate more easily where velocity is lower, a relative higher wave velocity may be a barrier for the acoustic wave. A distance/width of the barrier regions 429 (e.g., at least 2-3 wavelengths for certain applications), which may be wider than what may be required to sufficiently separate metal structures of different potentials, provides a sufficient barrier and prevents acoustic waves from coupling to outside regions.

In addition to the barrier regions 429, further regions referred to as a trap regions 427 are provided at either outer boundary of the central region 425 (e.g., bound on each end) where the fingers 426 overlap. In particular, a first trap region 427a is positioned towards or at a first end (e.g., boundary) of the central region 425 (e.g., active region) and between the first barrier region 429a and the central region 425 (e.g., in a region of the fingers 426 that is towards an end of the first set of fingers 426a that are connected to the second busbar 424 where the region is distal from the second busbar 424). A second trap region 427b is positioned towards or at a second end of the central region 425 (opposite the first end) and between the second barrier region 429b and the central region 425 (e.g., in a region of the fingers that is towards an end of the second set of fingers 426b that are connected to the first busbar 422 where the region is distal from the first busbar 422). The trap regions 427 may correspond to outer edges or outer regions of the central region 425. A structural characteristic in the trap regions 427 different than in the central region 425 is provided to create a region of the electroacoustic device aligned with the trap regions 427 that has a reduced acoustic wave velocity, in particular to be lower than an acoustic wave velocity in a region defined by the central region 425. Such structural characteristics may include widening the electrode fingers 426 in the trap regions 427 or increasing the height of the electrode fingers 426 in the trap regions 427, but many implementations are possible. In general, an acoustic wave may tend to propagate more easily where velocity is lower. The trap regions 427 with a lower acoustic wave velocity may thereby provide a way to shape the transversal amplitude profile of the fundamental acoustic wave mode.

As a result of designing and selecting sizes for the barrier regions 429, the trap regions 427, and the central region 425, the fundamental acoustic wave mode amplitude in the transversal directions (e.g., in the direction of the fingers 426) may be conformed towards a rectangular profile as indicated by line 444 of the plot 440. The rectangular profile caused by the different acoustic wave velocities in the different regions corresponds to a mode where undesired transversal modes are suppressed. Line 442 in the plot 440 corresponds to the fundamental mode amplitude in the transversal direction without trap regions which may lead to undesired transversal modes. Line 446 in the plot 440 corresponds to the fundamental mode amplitude in the transversal direction where the trap regions 427 are insufficiently deep (e.g., acoustic wave is not sufficiently slowed within that region). Although improved, undesired transversal modes may continue to impact performance. Line 448 in the plot 440 corresponds to the fundamental mode amplitude in the transversal direction where the trap regions 427 are too deep. This may also result in undesired transversal acoustic wave modes. By adjusting the characteristics of the barrier regions 429 and the trap regions 427, the fundamental mode amplitude in the transversal direction can be adjusted to conform towards the rectangular profile indicated by line 444 and transversal modes are effectively suppressed. The techniques for providing the barrier regions 429 and the trap regions 427 in such configurations are sometimes referred to a piston mode.

FIGS. 5A and 5B are diagrams of examples of electrode structures 504a and 504b that illustrate examples of different implementations of trap regions 527-1 and 527-2 as defined with reference to FIG. 4. Barrier regions 529 are denoted but are not particularly illustrated or drawn to scale. Rather, the electrode structures 504a and 504b are provided to illustrate implementations of the trap regions 527-1 (FIG. 5A) and 527-2 (FIG. 5B). For example, in the electrode structure 504a of FIG. 5A, the trap regions 527-1 are illustrated with a portion 509 of the electrode structure 504a having an increased thickness relative to other portions of the active region. A side view is shown on right along a cross-section 531. The increased height may result in a slower acoustic velocity in the trap regions 527-1. In another implementation, as illustrated by the electrode structure 504b of FIG. 5B, the electrode structure 504b within the trap regions 527-2 has a width that is wider as compared to the active region. These wider widths may result in a slower acoustic velocity in the trap regions 527-2. In some implementations, the trap regions 527-2 may have both a width that is wider as compared to the active region along with an increased height (e.g., thickness) as illustrated in FIG. 5A. As such, any techniques described herein for the trap regions 527-2 may be combined. In other implementations, other materials (e.g., a layer of dielectric material) may be positioned over the trap regions 427 (FIG. 4) to reduce an acoustic velocity in the trap regions 427 (e.g., or other types of mass loading). In addition, one or more trimming operations may adjust or have a structural effect in the various regions so that the relative acoustic velocity in the trap regions 427 are reduced relative to the central region 425. Other implementations using different techniques may also be employed such that structural characteristics in the trap regions 427 are adjusted and different than in the central region 425 so that there is reduced acoustic velocity in trap regions 427.

In certain electroacoustic device designs, the barrier regions 429 may be a sufficient parameter that can be adjusted to create the desired transversal acoustic velocity profile to work in conjunction with the trap regions 427 to suppress transversal acoustic modes (e.g., achieve relatively higher acoustic velocity than in the active region). However, for certain other electroacoustic devices desired using different materials, configuring the size of the barrier regions 429 may not create a transversal mode acoustic profile that causes the acoustic velocity in the barrier regions 429 to be sufficiently high to create the desired transversal velocity profile. For example, FIGS. 3A and 3B illustrate a thin-film type of electroacoustic device 300. In some implementations, the piezoelectric material 302 in this electroacoustic device 300 may be formed from Lithium tantalate (LiTaO3). The acoustic velocity profile for Lithium tantalate may be different than other systems based on the coupling factor (and may be due in part to the particular layer stack and thickness of Lithium tantalate such as for the thin-film type shown in FIGS. 3A and 3B). For example, for a Lithium tantalate based device, the difference in velocity between the central region 425 and the barrier regions 429 may be lower and therefore transversal modes may not be as easily confined over the entire stopband width of the electroacoustic device 300. In addition, for a Lithium tantalate based electroacoustic device, in the central region 425, increased frequency may correspond to increasing angles from the main acoustic wave propagation direction (e.g., sometimes referred to as a “convex slowness”). However, for a Lithium tantalate based system, in the barrier regions 429, mode frequency decreases with increasing propagation angles (a “concave slowness” in barrier regions 429). A concave slowness may be attractive for the acoustic wave and spurious modes may be formed. Having a concave slowness in the barrier regions 429 may therefore result in undesired modes to be excited within the barrier regions 429. As such, it is desirable to provide a structure that achieves a convex slowness in the barrier regions 429 to reduce unwanted modes in the barrier regions 429 along with providing a desired higher acoustic velocity within the barrier regions 429.

Certain techniques to address these issues for such electroacoustic devices may be difficult to implement for higher metallization ratios and higher metal heights (and due to other manufacturing difficulties of such solution) and may increase ohmic losses. In addition, barrier regions 429 as described with reference to FIG. 4 (e.g., including 1 strip per wavelength) may lead to concave slowness for certain configurations such as when using Lithium tantalate based devices as described above with reference to FIG. 3A. Aspects of the disclosure described herein relate to implementations for the barrier regions 429 to suppress transversal modes while being easier to manufacture and design for. These techniques may apply to a variety of different types of electroacoustic devices, but may have particular advantages for thin-film electroacoustic devices using Lithium tantalate.

FIG. 6 is a diagram of an example of an electrode structure 604 of an electroacoustic device (e.g., a SAW resonator) that reduces transversal acoustic modes according to aspects of the present disclosure. The electrode structure 604 may be disposed on or above a piezoelectric material 602 (or be arranged relative to the piezoelectric material 602 so that there is an electroacoustic coupling between the piezoelectric material 602 and the electrode structure 604). As described above, in an aspect, the piezoelectric material 602 may include or be formed from Lithium tantalate or a material with similar properties as Lithium tantalate (the Lithium tantalate having a particular thickness and corresponding unique electroacoustic coupling with the electrode structure 604). The electrode structure 604 (which may be in the form of or include an IDT 605) includes a first busbar 622 and a second busbar 624. In some aspects, the first busbar 622 and the second busbar 624 may be referred to as conductive connection structures more generally. In certain aspects, the first busbar 622 and the second busbar 624 extend along a direction and are in parallel or to each other (although certain differences in angles between the busbars may be possible).

The electrode structure 604 further includes electrode fingers 626 arranged in an interdigitated manner and connected to either the first busbar 622 or the second busbar 624. In particular, the electrode fingers 626 include a first plurality of fingers 626a connected to the first busbar 622 and extending towards the second busbar 624. In addition, the electrode fingers 626 include a second plurality of fingers 626b connected to the second busbar 624 and extending towards the first busbar 622. The electrode fingers 626 have a pitch 652. Similarly as described above with reference to FIG. 2, in certain aspects, the pitch 652 may correspond to a periodicity of the electrode fingers 626. In certain aspects, the pitch 652 may be indicated by a distance between centers of adjacent electrode fingers 626. When the electrode fingers 626 are generally of the same width, then this distance may also be defined by the distance between left edges of adjacent electrode fingers 626 (or right edges). In addition, in certain aspects where the electrode fingers 626 are not uniformly distributed, the pitch 652 may be indicated by an average of the distances between centers of adjacent electrode fingers 626. Other ways to measure or indicate the pitch 652 may also be possible. In certain aspects, the electrode fingers 626 extend in a direction normal to a direction of the first busbar 622 and the second busbar 624 (although certain other angles are possible).

As illustrated, and similar to that described with reference to FIG. 4, the electrode fingers 626 have a central region 625 that may correspond to or include an active region (also referred to as a track or aperture). In this region, the first plurality of fingers 626a and the second plurality of fingers 626b overlap in the direction along which the first busbar 622 and the second busbar 624 extend. A first trap region 627a and a second trap region 627b, together trap regions 627, are defined that are located on boundaries of the central region 625 (see also description of the trap regions 427 described with reference to FIG. 4). In some aspects, the first trap region 627a may be positioned in a region of the electrode fingers 626 aligned with a portion that is towards or at an end portion of the second plurality of fingers 626b that is proximate to the first busbar 622 (where there is a first gap 631a between the first busbar 622 and the second plurality of fingers 626b). Likewise, the second trap region 627b may be positioned in a region of the electrode fingers 626 aligned with a portion that is towards an end portion of the first plurality of fingers 626a that is proximate to the second busbar 624 (where there is a second gap 631b between the second busbar 624 and the first plurality of fingers 626a). As described above with reference to FIGS. 4, 5A, and 5B, a structural characteristic of the electroacoustic device is different in the first trap region 627a and the second trap region 627b relative to the central region 625. For example, the structural characteristic may correspond to a portion of the electrode fingers 626 having an increased width or increased height within the first and second trap regions 627 or any other characteristic as described above with reference to FIGS. 4, 5A, and 5B. In particular, the structural characteristic causes an acoustic velocity in the electroacoustic device in a region defined by the trap regions 627 to be lower relative to acoustic velocities in the central region 625 (and also lower than the barrier regions). In certain aspects, a dimension of the trap regions 627 in the direction in which the electrode fingers 626 extend may be between one-half of the pitch 652 of the electrode fingers 626 and twice the pitch of the electrode fingers 626 (although amounts may vary based on the application).

As described above with reference to FIG. 4, in certain alternative configurations for reducing transversal modes, the distance of the barrier regions 429 may be increased or are at a level beyond (e.g., well beyond) what is needed for electrical isolation to separate metal structures of different potentials. As described above, however, due to the particular electroacoustic coupling to the piezoelectric material 602 such as Lithium tantalate, additional spurious modes may be generated within these barrier regions 429 in certain electrode configurations. The electrode structure 604 of FIG. 6, in contrast, includes a small gap between the busbars 622 and 624 and the electrode fingers 626 (e.g., and in one particular example, smaller, in an aspect, relative to other implementations used in conjunction with trap regions 427 as described with reference to FIG. 4). This small gap may be defined by a distance just sufficient to provide electrical isolation to separate metal structures of different potentials. In particular, a first gap 631a between the first busbar 622 and the second plurality of fingers 626b is defined with a small distance. A second gap 631b between the second busbar 624 and the first plurality of fingers 626a is defined with a small distance. The small distances bring the first busbar 622 and the second busbar 624 closer to corresponding unconnected fingers 626.

Based on coupling to the piezoelectric material 602 (e.g., Lithium tantalate), in the configuration of the electrode structure 604 of FIG. 6, the first busbar 622 and the second busbar 624 may define a region in the electroacoustic device that has an acoustic velocity that is higher than in a region defined by the central region 625 of the electrode fingers 626. Lithium niobate and quartz are additional examples for the piezoelectric material 602. In this aspect, the first busbar 622 and first gap 631a form a first barrier region 629a of the electrode structure 604. Likewise, the second busbar 624 and the second gap 631b form a second barrier region 629b. Together, the first barrier region 629a and the second barrier region 629b may be referred to as barrier regions 629. In these barrier regions 629, including the first busbar 622 and the second busbar 624, the acoustic velocity in a region defined by the barrier regions 629 may be higher than in the central region 625. As a result, the barrier regions 629 may form a barrier to transversal acoustic waves and thereby, in conjunction with the trap regions 627, effectively reduce transversal modes.

As noted above, the first gap 631a and the second gap 631b define a relatively small distance. There may be a variety of distances that may work. In an aspect, a first distance between the first busbar 622 and the second plurality of fingers 626b and a second distance between the second busbar 624 and the first plurality of fingers 626a both are at least less than a pitch of the electrode fingers 626. In some aspects, the first distance and the second distance are just sufficient to provide electrical isolation. In any aspect, the first distance (e.g., first gap 631a) and the second distance (e.g., second gap 631b) is sufficiently small (in conjunction with the trap regions 627) to reduce any spurious acoustic wave modes generated in the gaps as well as bring the first busbar 622 and the second busbar 624 sufficiently close to the trap regions 627 and central region 625. Bringing the first busbar 622 and the second busbar 624 sufficiently close to the trap regions 627 and central region 625 allows for taking advantage of the higher acoustic velocity in the regions defined by the first busbar 622 and the second busbar 624 (e.g., based on the coupling to the piezoelectric material 602) to function as a barrier to acoustic waves to confine wave modes within the central region 625 and reduce transversal acoustic wave modes.

In certain aspects, the height (e.g., thickness) of the first busbar 622 and the second busbar 624 or other dimensions or characteristics (e.g., metal type or metal stack, etc.) are selected and/or configured so that the acoustic velocity in the region defined by the first busbar 622 and the second busbar 624 is higher than in the central region 625. This may depend as well on the particular metal for the first busbar 622 and the second busbar 624 and the type of piezoelectric material 602. As configured, and combined with the relatively small first gap 631a and second gap 631b, the first busbar 622 and the second busbar 624 may operate as barrier regions 629 to reduce transversal acoustic wave modes.

As a result of the small first gap 631a and the small second gap 631b, the difference in the acoustic wave velocity increases between the region of the first busbar 622 and the second busbar 624 (with first gap 631a and second gap 631b) and the central region 625. As described above with reference to FIG. 4, the difference in transversal acoustic wave velocity between the regions (in conjunction with the trap regions 627) suppresses transversal acoustic wave modes. In addition, due to the small gap, any spurious modes that could be excited in the regions may be reduced or negligible (in some instances the small gap may even disallow excitation of a transversal gap mode). In addition, manufacturability of the electrode structure 604 may be easier relative to other implementations that may require additional structures. In addition, moving the first busbar 622 and the second busbar 624 closer to the electrode fingers 626 may reduce ohmic losses. In addition, due to the lack of additional structures for the barrier regions 629, there may be less process variation which may increase yield and it may be easier to scale such designs for smaller structures (for scaling for higher operating frequencies) or make smaller chips. These aspects may be particularly valuable for implementations involving cascaded tracks with multiple barrier regions and may allow for smaller chip sizes.

The first busbar 622, the second busbar 624, and electrode fingers 626 may be generally metallic or be made from some other conductive material. In some aspects, they can be formed from at least some of the same materials and may be implemented with a variety of different metallic stacks.

FIGS. 7A and 7B are diagrams of examples of implementations of the electrode structure 604 of FIG. 6. The electrode structure 704a of the FIG. 7A is similar to the electrode structure 604 of FIG. 6 but illustrates that there may be small connection pads 782 connecting the electrode fingers 626 to one of the first busbar 622 or the second busbar 624. The connection pads 782 may provide an adequate electrical connection between the fingers 626 and the first busbar 622 and the second busbar 624 (although the connection pads 728 may be omitted in some implementations). In some aspects, a dimension of the connection pads 782 in a direction in which the electrode fingers 626 extend as an example may be on the order of between one-fourth of the pitch 652 of the electrode fingers 626 and one-half of the electrode pitch 652 of the fingers 626.

FIG. 7B shows an electrode structure 704b with a different implementation for the trap regions 727 (first trap region 727a and second trap region 727b). The trap regions 727 of the electrode structure 704b are implemented to have a wider electrode portion relative to the central region 725 (see description above with reference to FIG. 5B). This illustrates that there may be a variety of different implementations for the trap regions 727.

FIG. 8 is a plot 800 illustrating electroacoustic device admittance values versus frequency of an electroacoustic device including the electrode structure 604 of FIG. 6 versus an alternative electrode structure. The plot 800 includes a line 862 corresponding to admittance values versus frequency of an electroacoustic device using the electrode structure 604 of FIG. 6. The line 864 corresponds to admittance values versus frequency of a different electroacoustic device that implements barrier regions 429 in an alternative manner. As illustrated, the lines 862 and 864 have similar performance and the plot 800 illustrates that the electrode structure 604 of FIG. 6 may be effective in reducing transversal acoustic wave modes (and with performance similar to other techniques).

Example Operations

FIG. 9 is a flow chart illustrating an example of a method 900 for forming an electroacoustic device including a piezoelectric material 602 (FIG. 6) and the electrode structure 604 of FIG. 6 according to certain aspects of the present disclosure. The method 900 is described in the form of a set of blocks that specify operations that can be performed. However, operations are not necessarily limited to the order shown in FIG. 9 or described herein, for the operations may be implemented in alternative orders or in fully or partially overlapping manners. Also, more, fewer, and/or different operations may be implemented to perform the method 900, or an alternative approach. At block 902, the method 900 includes forming a layer of piezoelectric material 602. At block 904, the method 900 further includes forming an electrode structure 604 on or above the piezoelectric material 602. Forming the electrode structure 604 of block 904 includes, at block 906, forming a first busbar 622 and a second busbar 624. Forming the electrode structure 604 of block 904 further includes, at block 908, forming electrode fingers 626 arranged in an interdigitated manner, where forming the electrode fingers 626 includes forming a first plurality of fingers 626a connected to the first busbar 622 and forming a second plurality of fingers 626b connected to the second busbar 624. A first distance between the first busbar 622 and the second plurality of fingers 626b and a second distance between the second busbar 624 and the first plurality of fingers 626a is formed to be less than a pitch of the electrode fingers 626.

As described above, the electrode fingers 626 have a central region 625 with a first trap region 627a and a second trap region 627b respectively located on boundaries of the central region 625. In certain aspects, the method 900, at block 910, may further include adjusting or forming a structural characteristic of the electroacoustic device in the first and second trap regions 627 to reduce an acoustic velocity.

In certain aspects, with reference to FIG. 6, a method for filtering an electrical signal via an electroacoustic device including a piezoelectric material 602 and an interdigital transducer 605 may be provided. The method includes providing the electrical signal to a terminal of the interdigital transducer 605. The method further includes reducing a transversal acoustic wave mode via a first busbar 622 and a second busbar 624 having a plurality of interdigitated electrode fingers 626 of the interdigital transducer 605 connected to either of the first busbar 622 or the second busbar 624. A first distance between the first busbar 622 and a first portion of the electrode fingers 626b unconnected to the first busbar 622 and a second distance between the second busbar 624 and a second portion of the electrode fingers 626a unconnected to the second busbar 624 both being less than a pitch 652 of the plurality of interdigitated electrode fingers 626.

The electroacoustic devices with the electrode structure 604 of FIG. 6 may be used in a variety of applications.

FIG. 10 is a schematic diagram of an electroacoustic filter circuit 1000 that may include the electrode structure 604 of FIG. 6. The filter circuit 1000 provides one example of where the electrode structure 604 may be used. The filter circuit 1000 includes an input terminal 1002 and an output terminal 1014. Between the input terminal 1002 and the output terminal 1014 a ladder network of SAW resonators is provided. The filter circuit 1000 includes a first SAW resonator 1004, a second SAW resonator 1006, and a third SAW resonator 1008 all electrically connected in series between the input terminal 1002 and the output terminal 1014. A fourth SAW resonator 1010 (e.g., shunt resonator) has a first terminal connected between the first SAW resonator 1004 and the second SAW resonator 1006 and a second terminal connected to a ground potential. A fifth SAW resonator 1012 (e.g., shunt resonator) has a first terminal connected between the second SAW resonator 1006 and the third SAW resonator 1008 and a second terminal connected to a ground potential. The electroacoustic filter circuit 1000 may, for example, be a bandpass circuit having a passband with a selected frequency range (e.g., on the order between 100 MHz and 3.5 GHz). While FIG. 10 illustrates one example of a ladder network, as described above, the electrode structure 604 of FIG. 6 may be incorporated into other resonator configurations such as within a DMS design.

FIG. 11 is a functional block diagram of at least a portion of an example of a simplified wireless transceiver circuit 1100 in which the filter circuit 1000 of FIG. 10 including the electrode structure 604 of FIG. 6 may be employed. The transceiver circuit 1100 is configured to receive signals/information for transmission (shown as I and Q values) which is provided to one or more base band filters 1112. The filtered output is provided to one or more mixers 1114. The output from the one or more mixers 1114 is provided to a driver amplifier 1116 whose output is provided to a power amplifier 1118 to produce an amplified signal for transmission. The amplified signal is output to the antenna 1122 through one or more filters 1120 (e.g., duplexers if used as a frequency division duplex transceiver or other filters). The one or more filters 1120 may include the filter circuit 1000 of FIG. 10 and may include the electrode structure 604 of FIG. 6. The antenna 1122 may be used for both wirelessly transmitting and receiving data. The transceiver circuit 1100 includes a receive path through the one or more filters 1120 to be provided to a low noise amplifier (LNA) 1124 and a further filter 1126 and then down-converted from the receive frequency to a baseband frequency through one or more mixer circuits 1128 before the signal is further processed (e.g., provided to an analog digital converter and then demodulated or otherwise processed in the digital domain). There may be separate filters for the receive circuit (e.g., may have a separate antenna or have separate receive filters) that may be implemented using the filter circuit 1000 of FIG. 10. Furthermore, the transceiver circuit 1100 illustrated represents one simplified example of a transceiver architecture and that other architectures (e.g., sharing or without sharing antennas) with other filter configurations are possible.

FIG. 12 is a diagram of an environment 1200 that includes an electronic device 1202 that includes a wireless transceiver 1296 such as the transceiver circuit 1100 of FIG. 11 (and that may incorporate filters that use the electrode structure 604 of FIG. 6). In the environment 1200, the electronic device 1202 communicates with a base station 1204 through a wireless link 1206. As shown, the electronic device 1202 is depicted as a smart phone. However, the electronic device 1202 may be implemented as any suitable computing or other electronic device, such as a cellular base station, broadband router, access point, cellular or mobile phone, gaming device, navigation device, media device, laptop computer, desktop computer, tablet computer, server computer, network-attached storage (NAS) device, smart appliance, vehicle-based communication system, Internet of Things (IoT) device, sensor or security device, asset tracker, and so forth.

The base station 1204 communicates with the electronic device 1202 via the wireless link 1206, which may be implemented as any suitable type of wireless link. Although depicted as a base station tower of a cellular radio network, the base station 1204 may represent or be implemented as another device, such as a satellite, terrestrial broadcast tower, access point, peer to peer device, mesh network node, fiber optic line, another electronic device generally as described above, and so forth. Hence, the electronic device 1202 may communicate with the base station 1204 or another device via a wired connection, a wireless connection, or a combination thereof. The wireless link 1206 can include a downlink of data or control information communicated from the base station 1204 to the electronic device 1202 and an uplink of other data or control information communicated from the electronic device 1202 to the base station 1204. The wireless link 1206 may be implemented using any suitable communication protocol or standard, such as 3rd Generation Partnership Project Long-Term Evolution (3GPP LTE, 3GPP NR 5G), IEEE 802.11, IEEE 802.16, Bluetooth™, and so forth.

The electronic device 1202 includes a processor 1280 and a memory 1282. The memory 1282 may be or form a portion of a computer readable storage medium. The processor 1280 may include any type of processor, such as an application processor or a multi-core processor, that is configured to execute processor-executable instructions (e.g., code) stored by the memory 1282. The memory 1282 may include any suitable type of data storage media, such as volatile memory (e.g., random access memory (RAM)), non-volatile memory (e.g., Flash memory), optical media, magnetic media (e.g., disk or tape), and so forth. In the context of this disclosure, the memory 1282 is implemented to store instructions 1284, data 1286, and other information of the electronic device 1202, and thus when configured as or part of a computer readable storage medium, the memory 1282 does not include transitory propagating signals or carrier waves.

The electronic device 1202 may also include input/output ports 1290 (I/O ports 116). The I/O ports 1290 enable data exchanges or interaction with other devices, networks, or users or between components of the device.

The electronic device 1202 may further include a signal processor (SP) 1292 (e.g., such as a digital signal processor (DSP)). The signal processor 1292 may function similar to the processor and may be capable executing instructions and/or processing information in conjunction with the memory 1282.

For communication purposes, the electronic device 1202 also includes a modem 1294, a wireless transceiver 1296, and an antenna (not shown). The wireless transceiver 1296 provides connectivity to respective networks and other electronic devices connected therewith using radio-frequency (RF) wireless signals and may include the transceiver circuit 1100 of FIG. 11. The wireless transceiver 1296 may facilitate communication over any suitable type of wireless network, such as a wireless local area network (LAN) (WLAN), a peer to peer (P2P) network, a mesh network, a cellular network, a wireless wide area network (WWAN), a navigational network (e.g., the Global Positioning System (GPS) of North America or another Global Navigation Satellite System (GNSS)), and/or a wireless personal area network (WPAN).

Implementation examples are described in the following numbered clauses:

1. An electroacoustic device, comprising:

• • a piezoelectric material; and
  • an electrode structure, comprising:
  • a first busbar and a second busbar; and
  • electrode fingers arranged in an interdigitated manner and comprising a first plurality of fingers connected to the first busbar and a second plurality of fingers connected to the second busbar,
  • a first distance between the first busbar and the second plurality of fingers and a second distance between the second busbar and the first plurality of fingers both being less than a pitch of the electrode fingers,
  • the electrode fingers having a central region with a first trap region and a second trap region respectively located on boundaries of the central region, wherein a structural characteristic of the electroacoustic device is different in the first trap region and the second trap region relative to the central region.2. The electroacoustic device of clause 1, wherein the structural characteristic corresponds to a portion of each of the electrode fingers having an increased width or increased height within the first trap region and the second trap region relative to within the central region.3. The electroacoustic device of clause 1, wherein the structural characteristic corresponds to at least one of a dielectric material positioned over the first trap region and the second trap region, a mass loading within the first trap region and the second trap region, or a structural effect of a trimming operation.4. The electroacoustic device of any of clauses 1 to 3, wherein an acoustic velocity in a region of the electroacoustic device defined at least in part by the first busbar and the second busbar is higher than in a region of the electroacoustic device defined by the first trap region, the second trap region, and the central region.5. The electroacoustic device of clause 4, wherein the acoustic velocity in the first trap region and the second trap region is lower than the acoustic velocity in the central region.6. The electroacoustic device of any of clauses 1 to 5, wherein a dimension of the trap region in the direction in which the electrode fingers extend is between one-half of a pitch of the electrode fingers and twice the pitch of the electrode fingers.7. The electroacoustic device of any of clauses 1 to 6, wherein an acoustic velocity in a region of the electroacoustic device defined by the first trap region and the second trap region is lower than in a region of the electroacoustic device defined by the central region.8. The electroacoustic device of any of clauses 1 to 7, wherein the electrode fingers extend in a direction normal to a direction of the first busbar and the second busbar.9. The electroacoustic device of any of clauses 1 to 8, wherein the piezoelectric material comprises lithium tantalate (LiTa03).10. The electroacoustic device of any of clauses 1 to 9, further comprising:

a substrate;

a trap rich layer forming a portion of or being disposed on the substrate; and

a layer of dielectric material disposed on the substrate, the piezoelectric material disposed on the layer of dielectric material.

11. The electroacoustic device of any of clauses 1 to 9, further comprising:

a substrate; and

a compensation layer disposed on the substrate, the piezoelectric material disposed between the electrode structure and the compensation layer.

12. The electroacoustic device of any of clauses 1 to 11, wherein the electroacoustic device is at least a part of a SAW resonator that forms part of a filter circuit.13. The electroacoustic device of clause 12, wherein the SAW resonator is part of at least one of a ladder network or dual-mode SAW circuit.14. The electroacoustic device of clause 12, wherein the filter circuit is part of a transceiver.15. A method for forming an electroacoustic device, comprising:

• • forming a layer of a piezoelectric material; and
  • forming an electrode structure on or above the piezoelectric material, forming the electrode structure comprising:
  • forming a first busbar and a second busbar;
  • forming electrode fingers arranged in an interdigitated manner, where forming the electrode fingers comprises forming a first plurality of fingers connected to the first busbar and forming a second plurality of fingers connected to the second busbar, a first distance between the first busbar and the second plurality of fingers and a second distance between the second busbar and the first plurality of fingers both being less than a pitch of the electrode fingers, the electrode fingers formed to have a central region and formed to have a first trap region and a second trap region respectively located on boundaries of the central region; and
  • adjusting or forming a structural characteristic of the electroacoustic device in the first and second trap regions to reduce an acoustic velocity.16. An electroacoustic device, comprising:
  • a substrate;
  • a piezoelectric material comprising Lithium tantalate disposed on the substrate; and
  • an electrode structure disposed on the piezoelectric material and comprising:
  • a first busbar and a second busbar; and
  • electrode fingers arranged in an interdigitated manner and comprising a first plurality of fingers connected to the first busbar and a second plurality of fingers connected to the second busbar,
  • a first distance between the first busbar and the second plurality of fingers and a second distance between the second busbar and the first plurality of fingers both being less than a pitch of the electrode fingers,
  • the electrode fingers having a central region with a first trap region and a second trap region respectively located on boundaries of the central region, wherein a structural characteristic of the electroacoustic device is different in the first trap region and the second trap region relative to the central region.17. The electroacoustic device of clause 16, wherein the substrate comprises a high resistivity layer, a trap rich layer, and a compensation layer.18. The electroacoustic device of any of clauses 16 to 17, wherein the structural characteristic corresponds to a portion of each of the electrode fingers having an increased width or increased height within the first trap region and the second trap region relative to within the central region.19. The electroacoustic device of any of clauses 16 to 18, wherein an acoustic velocity in a region of the electroacoustic device defined at least in part by the first busbar and the second busbar is higher than in a region of the electroacoustic device defined by the first trap region, the second trap region, and the central region.20. The electroacoustic device of any of clauses 16 to 19, wherein the first distance between the first busbar and the second plurality of fingers and the second distance between the second busbar and the first plurality of fingers are both sufficiently small such that the first busbar and the second busbar function as a barrier region to reduce transversal acoustic modes.21. An electroacoustic device, comprising:
  • a piezoelectric material comprising Lithium tantalate disposed on a substrate; and
  • an electrode structure disposed on the piezoelectric material and comprising:
  • a first busbar and a second busbar; and
  • electrode fingers arranged in an interdigitated manner and comprising a first plurality of fingers connected to the first busbar and a second plurality of fingers connected to the second busbar,
  • the electrode fingers having a central region with a first trap region and a second trap region respectively located on boundaries of the central region, wherein a structural characteristic of the electroacoustic device is different in the first trap region and the second trap region relative to the central region to reduce an acoustic velocity of the electroacoustic device in a region defined by the first trap region and the second trap region relative to a region defined by the central region,
  • wherein the acoustic velocity of the electroacoustic device in a region defined by the first busbar and the second busbar is higher than in the region defined by central region.22. The electroacoustic device of clause 21, wherein a first distance between the first busbar and the second plurality of fingers and a second distance between the second busbar and the first plurality of fingers both are less than a pitch of the electrode fingers.23. The electroacoustic device of any of clauses 21 to 22, wherein the substrate comprises a high resistivity layer, a trap rich layer, and a compensation layer.24. The electroacoustic device of any of clauses 21 to 23, wherein the structural characteristic corresponds to a portion of each of the electrode fingers having an increased width or increased height within the first trap region and the second trap region relative to the within the central region.25. A method for filtering an electrical signal via an electroacoustic device comprising a piezoelectric material and an interdigital transducer, the method comprising:
  • providing the electrical signal to a terminal of the interdigital transducer; and
  • reducing a transversal acoustic wave mode via a first busbar and a second busbar having a plurality of interdigitated electrode fingers of the interdigital transducer connected to either of the first busbar or the second busbar, a first distance between the first busbar and a first portion of the electrode fingers unconnected to the first busbar and a second distance between the second busbar and a second portion of the electrode fingers unconnected to the second busbar both being less than a pitch of the plurality of interdigitated electrode fingers.26. An electroacoustic device, comprising:
  • a piezoelectric material comprising Lithium tantalate disposed on a substrate; and
  • an electrode structure disposed on the piezoelectric material and comprising:
  • a first busbar and a second busbar;
  • electrode fingers arranged in an interdigitated manner and comprising a first plurality of fingers connected to the first busbar and a second plurality of fingers connected to the second busbar,
  • the electrode fingers having a central region with a first trap region and a second trap region respectively located on boundaries of the central region, wherein a structural characteristic of the electroacoustic device is different in the first trap region and the second trap region relative to the central region to reduce an acoustic velocity of the electroacoustic device in a region defined by the first trap region and the second trap region relative to a region defined by the central region,
  • wherein a first distance between the first busbar and the second plurality of fingers and a second distance between the second busbar and the first plurality of fingers both are sufficiently small such that the first busbar and the second busbar function as a barrier region to reduce transversal acoustic modes, the acoustic velocity of the electroacoustic device in a region defined by the first busbar and the second busbar being higher than in the region defined by central region.

The various operations of methods described above may be performed by any suitable means capable of performing the corresponding functions. The means may include various hardware and/or software component(s) and/or module(s), including, but not limited to a circuit, an application-specific integrated circuit (ASIC), or processor.

By way of example, an element, or any portion of an element, or any combination of elements described herein may be implemented as a “processing system” that includes one or more processors. Examples of processors include microprocessors, microcontrollers, graphics processing units (GPUs), central processing units (CPUs), application processors, digital signal processors (DSPs), reduced instruction set computing (RISC) processors, systems on a chip (SoC), baseband processors, field programmable gate arrays (FPGAs), programmable logic devices (PLDs), state machines, gated logic, discrete hardware circuits, and other suitable hardware configured to perform the various functionality described throughout this disclosure. One or more processors in the processing system may execute software. Software shall be construed broadly to mean instructions, instruction sets, code, code segments, program code, programs, subprograms, software components, applications, software applications, software packages, routines, subroutines, objects, executables, threads of execution, procedures, functions, etc., whether referred to as software, firmware, middleware, microcode, hardware description language, or otherwise.

Accordingly, in one or more example embodiments, the functions or circuitry blocks described may be implemented in hardware, software, or any combination thereof. If implemented in software, the functions may be stored on or encoded as one or more instructions or code on a computer-readable medium. Computer-readable media includes computer storage media. Storage media may be any available media that can be accessed by a computer. By way of example, and not limitation, such computer-readable media can comprise a random-access memory (RAM), a read-only memory (ROM), an electrically erasable programmable ROM (EEPROM), optical disk storage, magnetic disk storage, other magnetic storage devices, combinations of the aforementioned types of computer-readable media, or any other medium that can be used to store computer executable code in the form of instructions or data structures that can be accessed by a computer. In some aspects, components described with circuitry may be implemented by hardware, software, or any combination thereof.

Generally, where there are operations illustrated in figures, those operations may have corresponding counterpart means-plus-function components with similar numbering.

As used herein, the term “determining” encompasses a wide variety of actions. For example, “determining” may include calculating, computing, processing, deriving, investigating, looking up (e.g., looking up in a table, a database, or another data structure), ascertaining, and the like. Also, “determining” may include receiving (e.g., receiving information), accessing (e.g., accessing data in a memory), and the like. Also, “determining” may include resolving, selecting, choosing, establishing, and the like.

As used herein, a phrase referring to “at least one of” a list of items refers to any combination of those items, including single members. As an example, “at least one of: a, b, or c” is intended to cover: a, b, c, a-b, a-c, b-c, and a-b-c, as well as any combination with multiples of the same element (e.g., a-a, a-a-a, a-a-b, a-a-c, a-b-b, a-c-c, b-b, b-b-b, b-b-c, c-c, and c-c-c or any other ordering of a, b, and c).

The methods disclosed herein comprise one or more steps or actions for achieving the described method. The method steps and/or actions may be interchanged with one another without departing from the scope of the claims. In other words, unless a specific order of steps or actions is specified, the order and/or use of specific steps and/or actions may be modified without departing from the scope of the claims.

It is to be understood that the claims are not limited to the precise configuration and components illustrated above. Various modifications, changes and variations may be made in the arrangement, operation and details of the methods and apparatus described above without departing from the scope of the claims.

Claims

1. An electroacoustic device, comprising: a piezoelectric material; andan electrode structure, comprising: a first busbar and a second busbar; andelectrode fingers arranged in an interdigitated manner and comprising a first plurality of fingers connected to the first busbar and a second plurality of fingers connected to the second busbar,a first distance between the first busbar and the second plurality of fingers and a second distance between the second busbar and the first plurality of fingers both being less than a pitch of the electrode fingers,the electrode fingers having a central region with a first trap region and a second trap region respectively located on boundaries of the central region, wherein a structural characteristic of the electroacoustic device is different in the first trap region and the second trap region relative to the central region.

2. The electroacoustic device of claim 1, wherein the structural characteristic corresponds to a portion of each of the electrode fingers having an increased width or increased height within the first trap region and the second trap region relative to within the central region.

3. The electroacoustic device of claim 1, wherein the structural characteristic corresponds to at least one of a dielectric material positioned over the first trap region and the second trap region, a mass loading within the first trap region and the second trap region, or a structural effect of a trimming operation.

4. The electroacoustic device of claim 1, wherein an acoustic velocity in a region of the electroacoustic device defined at least in part by the first busbar and the second busbar is higher than in a region of the electroacoustic device defined by the first trap region, the second trap region, and the central region.

5. The electroacoustic device of claim 4, wherein the acoustic velocity in the first trap region and the second trap region is lower than the acoustic velocity in the central region.

6. The electroacoustic device of claim 1, wherein a dimension of the trap region in the direction in which the electrode fingers extend is between one-half of a pitch of the electrode fingers and twice the pitch of the electrode fingers.

7. The electroacoustic device of claim 1, wherein an acoustic velocity in a region of the electroacoustic device defined by the first trap region and the second trap region is lower than in a region of the electroacoustic device defined by the central region.

8. The electroacoustic device of claim 1, wherein the electrode fingers extend in a direction normal to a direction of the first busbar and the second busbar.

9. The electroacoustic device of claim 1, wherein the piezoelectric material comprises lithium tantalate (LiTa03).

10. The electroacoustic device of claim 1, further comprising: a substrate;a trap rich layer forming a portion of or being disposed on the substrate; anda layer of dielectric material disposed on the substrate, the piezoelectric material disposed on the layer of dielectric material.

11. The electroacoustic device of claim 1, further comprising: a substrate; anda compensation layer disposed on the substrate, the piezoelectric material disposed between the electrode structure and the compensation layer.

12. The electroacoustic device of claim 1, wherein the electroacoustic device is at least a part of a SAW resonator that forms part of a filter circuit.

13. The electroacoustic device of claim 12, wherein the SAW resonator is part of at least one of a ladder network or dual-mode SAW circuit.

14. The electroacoustic device of claim 12, wherein the filter circuit is part of a transceiver.

15. A method for forming an electroacoustic device, comprising: forming a layer of a piezoelectric material; andforming an electrode structure on or above the piezoelectric material, forming the electrode structure comprising: forming a first busbar and a second busbar;forming electrode fingers arranged in an interdigitated manner, where forming the electrode fingers comprises forming a first plurality of fingers connected to the first busbar and forming a second plurality of fingers connected to the second busbar, a first distance between the first busbar and the second plurality of fingers and a second distance between the second busbar and the first plurality of fingers both being less than a pitch of the electrode fingers, the electrode fingers formed to have a central region and formed to have a first trap region and a second trap region respectively located on boundaries of the central region; andadjusting or forming a structural characteristic of the electroacoustic device in the first and second trap regions to reduce an acoustic velocity.

16. An electroacoustic device, comprising: a substrate;a piezoelectric material comprising Lithium tantalate disposed on the substrate; andan electrode structure disposed on the piezoelectric material and comprising: a first busbar and a second busbar; andelectrode fingers arranged in an interdigitated manner and comprising a first plurality of fingers connected to the first busbar and a second plurality of fingers connected to the second busbar,a first distance between the first busbar and the second plurality of fingers and a second distance between the second busbar and the first plurality of fingers both being less than a pitch of the electrode fingers,the electrode fingers having a central region with a first trap region and a second trap region respectively located on boundaries of the central region, wherein a structural characteristic of the electroacoustic device is different in the first trap region and the second trap region relative to the central region.

17. The electroacoustic device of claim 16, wherein the substrate comprises a high resistivity layer, a trap rich layer, and a compensation layer.

18. The electroacoustic device of claim 16, wherein the structural characteristic corresponds to a portion of each of the electrode fingers having an increased width or increased height within the first trap region and the second trap region relative to within the central region.

19. The electroacoustic device of claim 16, wherein an acoustic velocity in a region of the electroacoustic device defined at least in part by the first busbar and the second busbar is higher than in a region of the electroacoustic device defined by the first trap region, the second trap region, and the central region.

20. The electroacoustic device of claim 16, wherein the first distance between the first busbar and the second plurality of fingers and the second distance between the second busbar and the first plurality of fingers are both sufficiently small such that the first busbar and the second busbar function as a barrier region to reduce transversal acoustic modes.

21. An electroacoustic device, comprising: a piezoelectric material comprising Lithium tantalate disposed on a substrate; andan electrode structure disposed on the piezoelectric material and comprising: a first busbar and a second busbar; andelectrode fingers arranged in an interdigitated manner and comprising a first plurality of fingers connected to the first busbar and a second plurality of fingers connected to the second busbar,the electrode fingers having a central region with a first trap region and a second trap region respectively located on boundaries of the central region, wherein a structural characteristic of the electroacoustic device is different in the first trap region and the second trap region relative to the central region to reduce an acoustic velocity of the electroacoustic device in a region defined by the first trap region and the second trap region relative to a region defined by the central region,wherein the acoustic velocity of the electroacoustic device in a region defined by the first busbar and the second busbar is higher than in the region defined by central region.

22. The electroacoustic device of claim 21, wherein a first distance between the first busbar and the second plurality of fingers and a second distance between the second busbar and the first plurality of fingers both are less than a pitch of the electrode fingers.

23. The electroacoustic device of claim 21, wherein the substrate comprises a high resistivity layer, a trap rich layer, and a compensation layer.

24. The electroacoustic device of claim 21, wherein the structural characteristic corresponds to a portion of each of the electrode fingers having an increased width or increased height within the first trap region and the second trap region relative to the within the central region.