Surface emission type semiconductor laser

Abstract

In order to manufacture a surface emission type semiconductor laser, a plurality of semiconductor layers including a multilayered semiconductor mirror, a cladding layer, an active layer and other layers are sequentially formed on a substrate through the organic metal vapor growth method. A photoresist mask is then formed on the semiconductor layers. At least the cladding layer in the semiconductor layers is anisotropically etched by the use of the photoresist mask. At least one column-like portion is thus formed to have sidewalls extending perpendicular to the substrate and to guide the light in a direction perpendicular to the substrate. Thereafter, a buried layer including a single layer formed therein at an area covering at least the sidewalls of the column-like portion is formed around the column-like portion. A multilayered dielectric mirror is deposited in the column-like portion on the light exit end thereof. The multilayered dielectric mirror is disposed at the light exit port of a light exit side electrode. To increase the reflectivity below the light exit side electrode, a multilayered semiconductor mirror may be formed in the column-like portion at a position nearer the light exit side than the cladding layer.

Description

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a surface emission type semiconductor laser adapted to emit a laser beam in a direction perpendicular to the substrate thereof and a method of making such a semiconductor laser.

2. Description of the Related Art

A surface emission type semiconductor laser that emits a light beam in a direction perpendicular to the substrate has been proposed in place of such surface emission type semiconductor lasers as disclosed in U.S. Pat. Nos. 4,637,122; 4,856,013 and 5,084,893, these being adapted to emit a light beam in a direction parallel to the substrate.

The surface emission type laser is disclosed in Lectures of the 50-th Meeting of Applied Physics in Japan (1989), Vol. 3, pp. 909, 29a-ZG-7. In accordance with the prior art, as shown in FIG. 12, there is first provided an n-type GaAs substrate 602 on which an n-type AlGaAs/AlAs multi-layer film 603, an n-type AlGaAs cladding layer 604, a p-type GaAs active layer 605 and a p-type AlGaAs cladding layer 606 are sequentially grown and formed. The multi-layered structure is then etched while leaving a column-like part at the top thereof. The remaining column-like part is enclosed by a buried layer which is formed by sequentially growing a p-type layer 607, n-type layer 608, p-type layer 609 and p-type layer 610 all of which are of AlGaAs in liquid phase epitaxy method. Thereafter, a multi-layer dielectric film 611 is deposited on the cap layer of p-type AlGaAs 610 at the top thereof. Finally, p- and n-type ohmic electrodes 612 and 601 are formed respectively on the top and bottom end faces of the structure thus formed. In such a manner, a surface emission type semiconductor laser will be completed.

The buried layer (607-608) formed in the above manner defines a p-n junction which is used as means for preventing current from leaking to layer sections other than the active layer section.

However, by using such a p-n junction, it is difficult to provide a sufficient current restriction; and it cannot suppress any reactive current perfectly. Due to generation of heat in the component, therefore, the surface emission type semiconductor laser constructed in accordance with the prior art is impractical in that it is difficult to perform a continuous generating drive in room temperature. It is thus important to restrict the reactive current in the surface emission type semiconductor laser.

Where the buried layer is of a multi-layered structure to form a p-n junction as in the prior art, the p-n interface in the buried layer should be positioned in consideration of a position of the interface between each of the adjacent column-like grown layers. It is difficult to control the thickness of each layer in the multilayered structure. It is therefore very difficult to consistently produce surface emission type semiconductor lasers.

If a buried layer is formed around the column by the liquid phase epitaxy method as in the prior art, there is a high risk of breaking-off of the column-like part, leading to a reduced yield. The prior art was thus subject to a structural limitation in improving its characteristics.

On the other hand, U.S. Pat. No. 4,949,351 discloses another surface emission type semiconductor laser that also uses a light exit side reflection mirror as an electrode. The reflection mirror is formed by sequentially depositing Ti, Pt and Au. When these metals are used for a reflection mirror, and if the thickness of this reflection mirror becomes equal to or more than 700 .ANG., almost no transmittance can be obtained, and the reflectivity does not exceed 92%. Therefore, when the reflection mirror is used as a light exit side reflection mirror, the need for transmitting light prevents the film thickness from exceeding 500 .ANG.. In this case, the reflectively of the reflection mirror becomes about 80%. Furthermore, by annealing the good ohmic contact with the semiconductor layers, the reflectivity is further reduced. If the reflection mirror is also used as an electrode for injecting a current into a resonator, it is extremely difficult to increase the reflectivity of the mirror.

The prior art raises further problems even when it is applied to various other devices such as laser printers and the like.

For example, laser printers can have an increased freedom of design as in simplifying the optical system or in decreasing the optical path, since the source of light (semiconductor laser and so on) has a relatively large size of light spot equal to several tens .mu.m and if a light emitting element having an increased intensity of light emission is used in the laser printers.

With the surface emission type semiconductor laser constructed according to the prior art, the optical resonator is entirely buried in a material having a refractive index higher than that of the resonator. Light rays are mainly guided in the vertical direction. As a result, a spot of light emission in the basic generation mode will have a diameter equal to about 2 .mu.m even if the shape of the resonator is modified in the horizontal direction.

It has been proposed that the light spots be located close to each other up to about 2 .mu.m and that a plurality of light sources be used to increase the size of a spot. From the standpoint of reproductiveness and yield, however, it is very difficult with the prior art to bury a plurality of resonators spaced away from one another by several microns using the LPE (Liquid Phase Epitaxy) method. Even if such a burying can be successfully carried out, the spots cannot be united into a single spot since the transverse leakage of light is little.

It is also necessary that a plurality of light spots are formed into a single beam of light and that the laser beams each consisted of plural spots are in phase to increase the intensity of light emission. However, the prior art could not produce a surface emission type semiconductor laser which emits a plurality of laser beams close to one another up to a distance by which one of the laser beams are influenced by the other, in order to synchronize the laser beams in phase.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a method of simply making a surface emission type semiconductor laser with a resonator that can reduce the leakage of a current injected into a buried layer and that can attain a highly efficient multiple reflection of light between a pair of reflection mirrors in a direction perpendicular to a substrate without increase of the device resistance.

Another object is to provide a highly efficient surface emission type semiconductor laser that can increase the reflectivity in the light exit side electrode to attain a further increase of the multiple reflection efficiency in the optical resonator and a method of making such a surface emission type semiconductor laser.

To this end, the present invention provides a method of making a surface emission type semiconductor laser that comprises a substrate and an optical resonator on the substrate, the optical resonator including a pair of reflection mirrors respectively located on the substrate and light exit sides thereof and a plurality of semiconductor layers formed between the reflection mirror pair, the light being emitted in a direction perpendicular to the substrate. The method includes the steps of:

forming the reflection mirror located on the substrate side and the semiconductor layer in the optical resonator on the substrate through the organic metal vapor growth method or the molecular-beam epitaxy growth method;

forming a photoresist mask on the semiconductor layers;

etching at least a cladding layer in the semiconductor layers by the use of the photoresist mask to form at least one column-like portion having sidewalls extending perpendicular to the substrate and being operative to guide the light in a direction perpendicular to the substrate;

forming a buried layer around the column-like portion, the buried layer including a single layer at its region covering the sidewalls of the column-like portion; and

depositing a multilayered dielectric mirror in the column-like portion on the light exit side thereof to form the reflection mirror on the light exit side.

According to the present invention, part of the semiconductor layer is anisotropic-etched into a column-like configuration by the use of the photoresist mask after the reflection mirrors and semiconductor layer have been grown on the substrate. The column-like portion is formed with sidewalls extending perpendicular to the substrate. Thereafter, the buried layer with a single layer covering at least the sidewalls of the column-like portion is embedded around the column-like portion. Thus, it is not required to take account of the position of the interface between the semiconductor layers when the buried layer is to be formed. Thereafter, the multilayered dielectric mirror is formed in the column-like portion on the light exit side thereof. The formation of the multilayered dielectric mirror eliminates the need for any multilayered semiconductor mirror to be formed on the light exit side. If only a multilayered semiconductor mirror is used to increase the reflectivity, the number of layers therein must be increased, leading to increase of the resistance. On the contrary, the present invention can reduce the element resistance in the optical resonator to lower the threshold voltage thereof. This means that the device is less heated and that the external differential quantum efficiency is increased to improve the lasing light output. If the multilayered dielectric mirror is used to increase the reflectivity, it will not induce any disturbance such as increase of the element resistance or the like. Therefore, the highly efficient multi-reflection can be performed between the mirror pair in the direction perpendicular to the substrate to provide a high-efficiency surface emission type semiconductor laser. Since the multilayered dielectric mirror is formed after the semiconductor layers including cladding, active and other layers have been grown, the resonator in the surface emission type semiconductor laser thus produced can have a length matching the desired resonance conditions.

An electrode having a light exit port is formed in a region in which the multilayered dielectric mirror is arranged. A multilayered semiconductor mirror may be formed in the column-like portion below this electrode and at a position nearer the light exit side than the cladding layer. Thus, the reflection mirror on the light exit side comprises both the multilayered dielectric and semiconductor mirrors. In such a case, the reflection area below the electrode is enlarged to increase the reflectivity below the electrode, unlike provision of only the multilayered dielectric mirror. Therefore, the multiple reflection efficiency in the optical resonator can further be increased. Since the multilayered semiconductor mirror is only used to increase the reflectivity below the electrode, it is not required that the number of layers in the multilayered semiconductor mirror is very large. Thus, the element resistance in the resonator will not excessively be increased. Because of the presence of the multilayered semiconductor mirror, the reflection area for the multilayered dielectric mirror, that is, the area of the light exit port formed in the electrode can be reduced. As a result, the contact area between the semiconductor layer and the electrode in the optical resonator can be increased to decrease the resistance in this contact area.

If a plurality of semiconductor layers are to be formed by a III-V group compound semiconductor, the multilayered semiconductor mirror is formed by alternately growing first layers of a III-V group compound semiconductor and second layers of another III-V group compound semiconductor having its refractive index different from that of the first layers. Thus, the multilayered semiconductor mirror can be continuously grown in the same manner as in the other semiconductor layers including cladding and other layers. Since the etching conditions are not variable, the multilayered semiconductor mirror can also be etched and formed into a column-like configuration at the same time when the semiconductor layer is etched and formed into a column-like configuration.

The multilayered dielectric mirror may be formed by alternately depositing third dielectric layers and fourth dielectric layers having their refractive index different from that of the third layers.

The buried layer may be formed by growing a II-VI group compound semiconductor epitaxial layer in the vapor phase around the column-like portion. The II-VI group compound semiconductor epitaxial layer may be formed of a combination of two, three or four elements which include II-group elements such as Zn, Cd and Hg and VI-group elements such as O, S, Se and Te. It is also desirable that the lattice constant of the II-VI group compound semiconductor epitaxial layer is equal to that of the column-like semiconductor layers. It is preferred that the semiconductor layer defining the resonator is a III-V group compound semiconductor epitaxial layer of GaAs, GaAlAs, GaAsP, InGaP, InGaAsP, InGaAs, AlGaAsSb or the like.

Since the II-VI group compound semiconductor epitaxial layer has a high resistance, the buried layer formed by this high-resistance layer can prevent a leakage of incoming current thereinto. This can attain very effective current restriction. Furthermore, the threshold level of current can be decreased since the reactive current is reduced. As a result, the present invention can provide a surface emission type semiconductor laser which generates less heat and can continuously perform the generation in room temperature. Since the buried layer is not multi-layered, it can be easily formed with consistency. Furthermore, the II-VI group compound semiconductor epitaxial layer can be formed by any other suitable manner other than the liquid phase epitaxy method, such as vapor phase epitaxy method, resulting in improvement of the yield in forming the column-like semiconductor layers. If the vapor phase epitaxy method is used, a buried layer can be reliably formed while permitting a plurality of column-like semiconductor layers to be arranged closer to one another, even if a space in which the buried layer is to be formed is small.

The buried layer may be formed by covering the interface between it and the optical resonator, including the sidewalls of the column-like portion, with an insulation silicon compound such as silicon oxides, silicon nitrides or silicon carbides. Such an insulation silicon compound may be formed at a relatively low temperature. This prevents the column-like portion from being heat deformed.

The insulation silicon compound may be formed into a thin film over which an insulation layer for flattening the area around the optical resonator can be formed. Thus, time required to form the insulation silicon compound can be shortened, resulting in reduction of time for which the column-like portion is exposed to heat. This further reliably prevents the heat deformation of the column-like portion. It is preferred that the flattening insulation layer is formed of any one of the SOG film, heat-resistant resin film, polycrystalline II-VI compound semiconductor or other insulation silicon compounds that are formed at a temperature lower than the insulation silicon compound thin-films.

If the optical resonator has a single column-like semiconductor layer, the reflecting mirror on the exit side thereof may be formed at a position opposite to the end face of the column within the range of said end face. In this case, the refractive index waveguide structure may be either of rib waveguide type or buried type.

In this surface emission type semiconductor laser, the optical resonator may include separation groove(s) for separating one of the column-like semiconductor layers from another adjacent one. The buried layer is buried in the separation groove and a light emitting portion is formed on each of the column-like semiconductor layers. The separation groove should not reach the active layer in the semiconductor layers defining the optical resonator. In such a manner, the respective light emitting portions are influenced by each other through the active layer, such that the lights from the light emitting portions will be in phase.

When it is desired to increase the light emission spot, a buried layer which is transparent for the wavelength of the exit laser beam may be buried in the separation groove. The exit side reflecting mirror is formed through a region opposite to the end face of each of the column-like layers and the buried layer buried in the separation groove. Thus, a region sandwiched between each adjacent light emitting portion also serves as a vertical resonating structure. Light leaked into such a region effectively contributes to the laser generation to increase the light emission spot in size. Since the synchronized laser beams are superimposed one over another, the light output increases and the angle of radiation decreases. With a GaAs laser generally used as a semiconductor layer of a resonator, a II-VI group compound semiconductor epitaxial layer transparent for the wavelength of the laser beam therefrom may be made of either ZnSe, ZnS, ZnSSe, ZnCdS or CdSSe. If the separation groove is perpendicular to the semiconductor substrate, light rays slantingly entering the separation groove can be totally reflected to increase the confinement of light, utilizing a differential refraction. If the cross-section of the separation groove parallel to the semiconductor substrate has a width ranging between 0.5 .mu.m and 10 .mu.m, the order of the transverse generation mode measured from NFP becomes O-order basic mode.

It is desirable that the etching step is terminated leaving a part of the cladding layer without exposure of the active layer underlying the cladding layer. Once the active layer is exposed externally, any impurity may be deposited thereon to create a defective crystal.

If the photoresist mask used in the etching step is formed by reactive-ion etching a photoresist layer which has been hard baked, the side walls of the photoresist mask becomes perpendicular to the semiconductor substrate. When a column-like semiconductor layers are formed by the reactive-ion beam etching process using such a photoresist mask, the column-like semiconductor layers may be finely worked to have vertical side walls.

When a hard baked photoresist mask having vertical sides is formed, it is preferred that a film of Ti, SiO.sub.2 or SiN is formed on the mask and also that a second photoresist layer is further formed on the formed film. When a resist pattern is formed using the second photoresist layer in the photolithograph step, the resist pattern is not necessarily required to have its sides perpendicular to the semiconductor substrate. When the resist pattern is used as a mask to etch the film for forming a film mask, the sides of the film mask will be perpendicular to the semiconductor substrate. When the hard baked photoresist layer is etched by the RIE process using such a film mask, the photoresist mask can be more easily formed to have vertical sides.

The thickness of the film mask is preferably smaller than the thickness of the underlying hard baked photoresist layer, and preferably ranges from 1000 Angstroms to 1 .mu.m. Thus, the film mask having sides perpendicular to the semiconductor substrate can be formed without creating any side etching.

It is also preferred that a polycrystalline etching stop layer having an etching rate lower than the etching rate of the II-VI group compound semiconductor epitaxial layer is formed of SiO.sub.2 or SiN between the multilayered semiconductor layer providing a column-like light emitting portion and the hard baked photoresist layer. When the II-VI group compound semiconductor epitaxial layer is vapor grown about the column-like light emitting portion, a polycrystalline II-VI group compound semiconductor layer is formed on the etching stop layer and protrudes beyond the II-VI group compound semiconductor epitaxial layer. When the surface of the II-VI group compound semiconductor epitaxial layer is etched to be substantially flush with the surface of the column-like light emitting portion, it is preferred that a layer having a flat surface has been previously formed on the single crystalline and polycrystalline II-VI group compound semiconductor layers. Thus, the etching can be continued while maintaining the surface flat. After the polycrystalline II-IV group compound semiconductor layer has been completely removed, the underlying etching stop layer will be exposed. Since the etching stop layer has an etching rate lower than the etching rate of the II-VI group compound semiconductor epitaxial layer, the surface of the buried layer can be etched to be substantially flush with the surface of the column-like light emitting portion when the end of etching is set depending on the degree of exposure in the etching stop layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view, partially in section, of a light emitting portion of one embodiment of a semiconductor laser constructed in accordance with the present invention.

FIGS. 2a-2e are cross-sectional views of the semiconductor laser shown in FIG. 1, illustrating the process of making it.

FIG. 3 is a graph illustrating the relationship between the drive current and the generated light output in the semiconductor laser shown in FIG. 1.

FIG. 4 is a perspective view, partially in section, of a light emitting portion of another embodiment of a semiconductor laser constructed in accordance with the present invention.

FIGS. 5a-5e are cross-sectional views of the semiconductor laser shown in FIG. 4, illustrating the process of making it.

FIG. 6 is a perspective view, partially in section, of a light emitting portion of a surface emission type semiconductor laser constructed in accordance with the present invention, the semiconductor laser adapted to generate laser beams synchronized in phase.

FIGS. 7a-7f are cross-sectional views of the semiconductor laser shown in FIG. 6, illustrating the process of making it.

FIGS. 8a-8d illustrate differences in shape and near field pattern between the surface emission type semiconductor laser constructed according to the prior art and the semiconductor laser of FIG. 6; FIG. 8(a) shows the shape of the surface emission type semiconductor laser of the prior art on the exit side thereof; FIG. 8(b) shows an intensity profile in the near field pattern of the semiconductor laser shown in FIG. 8(a); FIG. 8(c) shows the shape of the semiconductor laser of the present embodiment at the exit side; and FIG. 8(d) shows an intensity profile of the near field pattern of the semiconductor laser shown in FIG. 8(c).

FIGS. 9(a) to (m) schematically illustrate various shapes of surface emission type semiconductor lasers constructed according to further embodiments of the present invention at the exit sides thereof.

FIGS. 10(a) to (d) schematically illustrate various shapes of surface emission type semiconductor lasers constructed according to still further embodiments of the present invention at the exit sides thereof.

FIGS. 11(a) to (c) schematically illustrate various shapes of surface emission type semiconductor lasers constructed according to other embodiments of the present invention at the exit sides thereof.

FIG. 12 is a perspective view of a surface emission type semiconductor laser constructed according to the prior art, illustrating the light emitting portion thereof.

FIGS. 13a-13p are cross-sectional views illustrating various modifications of the process in FIG. 5 according to the present invention.

FIG. 14 is a schematic perspective view, partially broken, of the other embodiment of a surface emission type semiconductor laser constructed according to the present invention, in which the buried layer is formed of the other material.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Referring to FIGS. 1 and 2, there is shown a semiconductor laser 100 constructed in accordance with one embodiment of the present invention.

The semiconductor laser 100 comprises a substrate of n-type GaAs 102 over which a buffer layer of n-type GaAs 103 is formed. Over the buffer layer 103, there are formed 30 pairs of distribution reflection type multi-layer film mirror 104 which include an n-type Al.sub.0.7 Ga.sub.0.3 As layer and an n-type Al.sub.0.1 Ga.sub.0.9 As layer and have a reflectivity equal to or higher than 98% against light rays having their wavelength substantially equal to 870 nm. On the multi-layer film mirror 104, there are sequentially formed on a cladding layer of n-type Al.sub.0.4 Ga.sub.0.6 As 105, an active layer of p-type GaAs 106, another cladding layer of p-type Al.sub.0.4 Ga.sub.0.6 As 107, and a contact layer of p-type Al.sub.0.1 Ga.sub.0.9 As 108, utilizing the epitaxial growth in the MOCVD process (see FIG. 2(a)). At this time, for example, the formation of these layers was carried out under such a condition that the temperature on growth is 700.degree. C. and the pressure on growth is 150 Torr, and used organic metals such as TMGa (trimethyl gallium) and TMAl (trimethyl aluminum) as III- group materials, AsH.sub.3 as V-group material, H.sub.2 Se as n-type dopant and DEZn (diethyl zinc) as p-type dopant.

After growth, an SiO.sub.2 layer 112 is formed on the top of the multi-layered structure by the thermal CVD process. By the use of the reactive ion beam etching process (RIBE process), the multi-layered structure is etched up to the middle of the cladding layer of p-type Al.sub.0.4 Ga.sub.0.6 As 107, leaving a column-like light emitting portion covered with a hard baked resist layer 113 (FIG. 2(b)). The etching gas is a mixture of chlorine with argon under a pressure of 1.times.10.sup.-3 Torr. The leading voltage used therein is equal to 400 V. The purpose of the etching of the cladding layer 107 up to the middle thereof is to provide a rib waveguide type refraction waveguide structure which can confine injected carriers and light rays in the active layer.

After the resist 113 has been removed, a layer of ZnS.sub.0.06 Se.sub.0.94 109 which is in lattice alignment with GaAs is then formed by causing this layer to grow around the column-like portion using the MBE or MOCVD process (FIG. 2(c)).

Four pairs of multi-layered dielectric film mirror of SiO.sub.2 /a-Si 111 are then formed on the top of the column-like portion by the use of electron beam deposition. Dry-etching is then used to remove a part of the mirror 111, leaving a region slightly smaller than the diameter of the light emitting portion (FIG. 2(d)). The reflectivity of the multi-layered dielectric film mirror 111 is 94% for wavelength of 870 nm.

Thereafter, a p-type ohmic electrode 110 is deposited on all the top face except the multi-layered dielectric film mirror 111. An n-type ohmic electrode 101 is further deposited over the bottom face of the semiconductor substrate 102. In an atmosphere of N.sub.2, the entire structure is alloyed at 420.degree. C. to provide a surface emission type semiconductor laser (FIG. 2(e)).

The surface emission type semiconductor laser thus formed provides a very effective current restriction since the buried layer 109 of ZnS.sub.0.06 Se.sub.0.94 has a resistance equal to or higher than one G.OMEGA. and there is no injection current into the buried layer. Since it is not required that the buried layer is any multi-layered structure, it can be more easily grown with an increased reproductiveness (consistency) from one batch to another. The utilization of the rib waveguide structure using the ZnS.sub.0.06 Se.sub.0.94 layer having its refractive index sufficiently smaller than that of GaAs can realize a more effective light confinement.

FIG. 3 shows the relationship between the drive current and the generated light output in the surface emission type semiconductor laser according to this embodiment. It will be apparent from this graph that the continuous generation can be accomplished at room temperature and the threshold is very low, or equal to one mA. Furthermore, the external differential quantum efficiency is increased and the characteristics of the laser is improved by restricting the reactive current.

If the cross-sectional shape of the column-like portion in the surface emission type semiconductor laser according to this embodiment of the present invention is of a circle or regular polygon such as square or regular octagon, a finely circular spot of beam can be provided. However, if this cross-sectional shape is of any configuration other than the above ones, such as rectangle or trapezoid, the cross-section of the laser beam will be ellipse or multi-mode. This is not desirable in applying the semiconductor laser to the devices.

TABLE 1______________________________________Diameter of Column Cross-Section Mode of Near Field Pattern______________________________________2 .mu.m Zero-Order Basic Mode5 .mu.m Zero-Order Basic Mode10 .mu.m Zero-Order Basic Mode12 .mu.m First-Order Mode15 .mu.m First-Order Mode______________________________________

Table 1 shows the relationship of near field pattern relative to the diameter of the cross-section of the column-like portion in the surface emission type semiconductor laser according to this embodiment of the present invention. It will be apparent therefrom that if the diameter is equal to or less than 10 .mu.m, the generation is carried out in the basic mode.

It is preferred that the contact layer 108 in the surface emission type semiconductor laser according to this embodiment of the present invention is of a thickness equal to or less than 3.0 .mu.m. This is because of reduction of the light absorption in the contact layer. Such a thickness is more preferably less than 0.3 .mu.m because the element resistance is reduced and the external differential quantum efficiency is increased.

Referring now to FIGS. 4 and 5, there is shown a semiconductor laser 200 constructed in accordance with another embodiment of the present invention.

The semiconductor laser 200 comprises a substrate of n-type GaAs 202 over which a buffer layer of n-type GaAs 203 is formed. Over the buffer layer 203, there are formed 30 pairs of distribution reflection type multi-layer film mirror 204 which include an n-type AlAs layer and an n-type Al.sub.0.1 Ga.sub.0.9 As layer and have a reflectivity equal to or higher than 98% against light rays having their wavelength substantially equal to 870 nm. On the multi-layer film mirror 204, there are sequentially formed a cladding layer of n-type Al.sub.0.4 Ga.sub.0.6 As 205, an active layer of p-type GaAs 206, another cladding layer of p-type Al.sub.0.4 Ga.sub.0.6 As 207 and a contact layer of p-type Al.sub.0.1 Ga.sub.0.9 As 208, utilizing the epitaxial growth in MOCVD process (see FIG. 5(a)). At this time, for example, the formation of these layers was carried out under such a condition that the temperature on growth is 700.degree. C. and the pressure on growth is 150 Torr, and used organic metals such as TMGa (trimethyl gallium) and TMAl (trimethyl aluminum) as III-group materials, AsH.sub.3 as V-group material, H.sub.2 Se as n-type dopant and DEZn (diethyl zinc) as p-type dopant.

After growth, an SiO.sub.2 layer 212 is formed on the top of the multi-layered structure by the thermal CVD process. By the use of the reactive ion beam etching process (RIBE process), the multi-layered structure is etched up to the middle of the cladding layer of n-type Al.sub.0.4 Ga.sub.0.6 As 205, leaving a column-like light emitting portion covered with a hard baked resist layer 213 (FIG. 5(b)). The etching gas is a mixture of chlorine with argon under a pressure of 1.times.10.sup.-3 Torr. The leading voltage used therein is equal to 400 V.

After the resist 213 has been removed, a layer of ZnS.sub.0.06 Se.sub.0.94 209 which is in lattice alignment with GaAs is then formed by causing this layer to grow around the column-like portion using the MBE or MOCVD process (FIG. 5(c)).

Four pairs of multi-layered dielectric film mirror of SiO.sub.2 /a-Si 211 are then formed on the top of the column-like portion by the use of electron beam deposition. Dry etching is then used to remove a part of mirror 211, leaving a region slightly smaller than the diameter of the light emitting portion (FIG. 5(d)). The reflectivity of the multi-layered dielectric film mirror 211 is 94% for wavelength of 870 nm.

Thereafter, a p-type ohmic electrode 210 is deposited on all the top face except the multi-layered dielectric film mirror 211. An n-type ohmic electrode 201 is further deposited over the bottom face of the semiconductor substrate 202. In an atmosphere of N.sub.2, the entire structure is alloyed at 420.degree. C. to provide a surface emission type semiconductor laser (FIG. 5(e)).

The surface emission type semiconductor laser thus formed provides a very effective current restriction since the buried layer of ZnS.sub.0.06 Se.sub.0.94 has a resistance equal to or higher than one G.OMEGA. and there is no injection current into the buried layer. Since it is not required that the buried layer is any multi-layered structure, it can be more easily grown with an increased reproductiveness from one batch to another. The utilization of the rib waveguide structure using the ZnS.sub.0.06 Se.sub.0.94 layer having its refractive index sufficiently smaller than that of GaAs can realize a more effective light confinement with the covering type refraction waveguide structure in which the active layer is buried.

The active GaAs layer may be replaced by an active layer made of AlGaAs with the equivalent advantage. Even if the column-like portion is formed of any one of the other III-V group compound semiconductors, the equivalent advantage can be provided by selecting any suitable one of the II-VI group compound semiconductor to form the buried layer.

Referring next to FIGS. 6 and 7, there is shown still another embodiment of a phase-synchronization type semiconductor laser 300 constructed in accordance with the present invention, which can increase the dimension of the emission spot.

The semiconductor laser 300 comprises a substrate of n-type GaAs 302 over which a buffer layer of n-type GaAs 303 is formed. Over the buffer layer 303, there are formed 25 pairs of distribution reflection type multi-layer film mirror 304 which include an n-type Al.sub.0.9 Ga.sub.0.1 As layer and an n-type Al.sub.0.2 Ga.sub.0.8 As layer and have a reflectivity equal to or higher than 98% against light rays having their wavelength substantially equal to 780.+-.30 nm. On the multi-layer film mirror 304, there are sequentially formed a cladding layer of n-type Al.sub.0.5 Ga.sub.0.5 As 305, an active layer of p-type Al.sub.0.13 Ga.sub.0.87 As 306, another cladding layer of p-type Al.sub.0.5 Ga.sub.0.5 As 307 and a contact layer of p-type Al.sub.0.15 Ga.sub.0.85 As 308, utilizing the epitaxial growth in the MOCVD process (see FIG. 7(a)). At this time, for example, the formation of these layers was carried out, for example, under such a condition that the temperature on growth is 720.degree. C. and the pressure on growth is 150 Torr, and used organic metals such as TMGa (trimethyl gallium) and TMAl (trimethyl aluminum) as III- group materials, AsH.sub.3 as V-group material, H.sub.2 Se as n-type dopant and DEZn (diethyl zinc) as p-type dopant.

After the growth, a SiO.sub.2 layer is formed on the top of the multi-layered structure in the atmospheric pressure by the thermal CVD process. A photoresist is then applied over the SiO.sub.2 layer and baked at a raised temperature to form a hard baked resist. A further SIO.sub.2 layer is formed over the hard baked resist by the EB deposition.

The respective layers formed on the substrate are then etched by the use of reactive ion etching process (RIE process). The SIO.sub.2 layer formed on the hard baked resist 313 is first subjected to the conventional photolithograph to form a necessary resist pattern. This resist pattern is then used as a mask to perform the RIE process against the SiO.sub.2 layer. For example, the RIE process may be carried out by using CF.sub.4 gas under a pressure of 4.5 Pa and an input RF power of 150 W and by controlling the sample holder at 20.degree. C. This SiO.sub.2 layer is then utilized as a mask to etch the hard baked resist 313 by the RIE process which uses, for example, O.sub.2 gas under a pressure of 4.5 Pa and an input power of 150 W and controls the sample holder at 20.degree. C. At the same time, the resist pattern initially formed on the SiO.sub.2 layer is also etched. In order to etch both the SiO.sub.2 layer left in the pattern and the SiO.sub.2 layer 312 formed on the epitaxial layer simultaneously, the etching is again performed by the use of CF.sub.4 gas. By using the thin SiO.sub.2 layer as a mask and performing the RIE process which is one of the dry etching processes against the hard baked resist 313, the latter may include side walls perpendicular to the substrate while maintaining the necessary pattern (FIG. 7(b)).

The hard baked resist 313 having such vertical side walls is used as a mask in the reactive ion beam etching (RIBE) process so that the cladding layer of p-type Al.sub.0.5 Ga.sub.0.5 As 307 is etched up to its middle, leaving a plurality of column-like light emitting portions (FIG. 7(c)). The etching gas used herein is a mixture of chlorine with argon under a pressure equal to 5.times.10.sup.-4 Torr and a plasma generating voltage equal to 400 V. The RIBE process is carried out at the current density of ion equal to 400 .mu.A/cm.sup.2 on the etching sample while maintaining the sample holder at 20.degree. C. The purpose of etching the cladding layer 307 up to its middle is to provide a refraction waveguide type rib waveguide structure for confining the horizontal injection carriers and light rays in the active layer such that a part of the light rays can be transmitted in the horizontal direction within the active layer.

If the RIBE process in which an ion beam is irradiated perpendicular to the hard baked resist 313 having its vertical side walls and the etching sample to etch them is used, the light emitting portions 320 arranged closed to each other can be separated from each other by a separation groove 314 and at the same time it is possible to produce a vertical light resonator which is required to improve the characteristics of the surface emission type semiconductor laser.

After the hard baked resist 313 has been removed, the MBE or MOCVD process is used to grow a layer of ZnS.sub.0.06 Se.sub.0.94 309 around the light emitting portions, such as buried layer serving as a II-VI group compound epitaxial layer which is in lattice alignment with Al.sub.0.5 Ga.sub.0.5 As (FIG. 7(d)). This buried layer 309 is transparent for the generation wavelength of the surface emission type semiconductor laser 300.

Next, the SiO.sub.2 layer and polycrystalline ZnSSe produced thereon are removed. Thereafter, four pairs of multi-layered dielectric film mirror 311 made of SiO.sub.2 /a-Si are formed on the top of the multi-layered structure by means of electron beam deposition. Dry etching is then used to remove a part of the mirror 311 (FIG. 7(e)). The reflectivity of the multi-layered dielectric film mirror at wavelength of 780 nm is 95% or more. Since the multilayered dielectric film mirror 311 is also formed over the separation groove 314 buried with ZnSSe, a vertical resonator structure also is formed at the region between the adjacent light emitting portions. As a result, light rays leaked into the separation groove 314 effectively contributes to the laser generation. Since the leaked light rays are utilized, the emitted light can be synchronized with the phase at the light emitting portions 320.

Thereafter, a p-type ohmic electrode 310 is deposited on the top face except the multi-layered dielectric film mirror 311. An n-type ohmic electrode 301 is deposited on the bottom face of the substrate. The structure thus formed is alloyed at 420.degree. C. in the atmosphere of N.sub.2 to complete the surface emission type semiconductor laser 300 (FIG. 7(f)). The n-type ohmic electrode 310 on the exit side is formed to connect with the contact layer 308 in each of the light emitting portion.

Since the emission type semiconductor laser produced according to this embodiment utilizes the epitaxial ZnSSe layer 309 as a buried layer, it can have a resistance equal to or higher than one G.OMEGA., which is higher than that of the prior art blocking structure using a counter bias at the p-n junction in the AlGaAs layer. This provides an optimum current blocking structure. Moreover, the light leaked from the light emitting portion 320 can be effectively utilized since the buried layer is made of a transparent material having less absorption for the generation wavelength of 780 nm.

FIG. 8 shows the arrangements of the surface emission type semiconductor lasers constructed respectively in accordance with the prior art and the present invention at the exit sides thereof and intensity profiles of NFP when the laser beam is generated. FIG. 8(a) shows that the resonators 620 of the prior art surface emission type semiconductor laser 600 shown in FIG. 12 are arranged close to one another up to a distance by which the resonators can be fully covered by the epitaxial layers of GaAlAs 607 and 608 connected with each other at the n-p junction, that is, a distance equal to about 5 .mu.m. Although the exit face of the laser actually includes the multi-layered dielectric film mirror and the p-type ohmic electrode formed thereon, they are omitted in FIG. 8 for clear illustration. FIG. 8(b) shows an intensity profile of NFP between points a and b in FIG. 8(a). The prior art surface emission type semiconductor laser only provides a plurality of adjacent light spots even if a plurality of light emitting portions 620 are arranged close to each other.

FIG. 8(c) shows the arrangement of the exit end of the surface emission type semiconductor laser constructed according to this embodiment wherein the separation groove is filled with a ZnS.sub.0.06 Se.sub.0.94 layer 309 formed by the vapor phase epitaxy method. Thus, the minimum width of the separation groove can be equal to one .mu.m. FIG. 8(d) shows NFP between points c and d in FIG. 8(c). It will be apparent from this NFP that the light emission spot is enlarged since light rays exit also from above the separation groove 314. Since the adjacent laser beams are synchronized with each other in phase, the light output can be increased with an angle of radiation being equal to or less than one degree.

Table 2 shows the relationship between the width of the separation groove of the surface emission type semiconductor laser 300 and the order of transverse generation mode measured from NFP.

TABLE 2______________________________________Width of Separation Groove Mode of Near Field Pattern______________________________________0.5 .mu.m Zero-Order Basic Mode1.0 .mu.m Zero-Order Basic Mode5.0 .mu.m Zero-Order Basic Mode 10 .mu.m First-Order Mode 20 .mu.m Higher-Order Mode______________________________________

If the width of the separative groove is less than 10 .mu.m, the transverse generation mode of the laser synchronized in phase is in the basic mode. If the width is equal to or more than 10 .mu.m, the laser will be generated in an order equal to or higher than one. In this case, the laser beam will be of an elliptic configuration with its increased angle of radiation. This is undesirable in all applications. If the separation groove has a width less than 0.5 .mu.m, the laser beam will not be circular.

Although the embodiments have been described as to a single optical resonator including a plurality of light emitting portions spaced away from one another, a plurality of such optical resonators may be formed on the same semiconductor substrate. If each of the optical resonators has a p-type ohmic electrode at its exit side, a laser beam from each optical resonator may be independently controlled with respect to ON, OFF and modulation.

Although the embodiments have been described as to the surface emission type semiconductor laser made of GaAlAs materials, the other III-V group compounds may be equivalently used in the present invention. Particularly, the generation wavelength may be varied by changing the composition of Al in the active layer of GaAlAs.

Although this embodiment has been described in connection with the structure shown in FIG. 6 and the light emitting portion shown in FIG. 8(c), the present invention is not limited to such an arrangement.

FIGS. 9 to 11 show the other embodiments of the present invention in which various configurations and arrangements of optical resonators and associated separation grooves in a plane parallel to the substrate as viewed from the exit side are schematically illustrated. FIGS. 9(a)-(j) and (m) represent line symmetry arrangements in which a plurality of column-like semiconductor layers each having a circular or regularly polygonal cross-section parallel to the substrate are formed. In any event, the light emitting spot formed by any one of such arrangements can have a dimension larger than that of a light emitting spot formed by a single light emitting portion. When it is desired to provide a single circular cross-sectional laser beam having a relatively large diameter from the respective light emitting portions and separation groove, the cross-section of each of the light emitting portions may be any configuration other than circle or regular polygon. The essential requirement in the concept of the present invention is that a non-circular or non-polygonal line joining the outer edges of the light emitting portions arranged in line symmetry approximate to a circular or regularly polygonal configuration. So, the configurations shown in FIG. 9(k) and (l) are suitable for generating the laser beam having larger diameter. Each of embodiments shown in FIGS. 10(a)-(d) and 11(a)-(c) includes light emitting portions of n in number and is advantageous in that it can produce a light emitting spot formed into any desirable size and form. In addition to the same advantages as in the embodiment of FIG. 6. In all the embodiments shown in FIGS. 10 and 11, a line beam may be provided by disposing a plurality of light emitting portions in row and/or column on a two-dimensional plane parallel to the substrate.

In the embodiment shown in FIG. 6, there may be produced a semiconductor laser which comprises a plurality of spaced p-type ohmic electrodes 310 equal in number to the light emitting portions 320, these electrodes 310 being connected with the contact layer 308. In such a case, each of the light emitting portions will generate a beam having a circular cross-section which can be independently controlled in ON, OFF and modulation, these beams being synchronized with one another in phase.

Referring next to FIGS. 13a-13p, there is shown a further embodiment of the present invention which is suitable for providing a resonator perpendicular to the plane of a semiconductor substrate.

In FIGS. 13a-13p it is to be understood that various layers similar to those of FIGS. 5a-5e are denoted by similar reference numerals and will not be further described.

FIG. 13a shows a process substantially similar to that of FIG. 5a which forms the semiconductor epitaxial layers. The process of FIG. 13a is different from that of FIG. 5a in that the former is adapted to form five pairs of distributed-reflection type multilayered film mirrors 214 between a cladding layer 207 and a contact layer 208. Each of the multilayered film mirrors 214 comprises a p-type layer of Al.sub.0.7 Ga.sub.0.3 As and a p-type layer of Al.sub.0.1 Ga.sub.0.9 As and has a reflectivity equal to or higher than 75% against a light which has a wavelength equal to about 870 nm. In such a manner, the multilayered semiconductor mirror 214 is formed by alternately depositing first layers of the same III-V group compound semiconductor as in the other semiconductor layers 203-208 and second layers of another III-V group compound semiconductor having its refractive index different from that of the first layers. The multilayered semiconductor mirror 214 has its reflectivity for emission wavelength higher than that of the P-type ohmic electrode 210. The formation of these mirrors 214 is intended to increase the reflectivity under a p-type ohmic electrode 210 (to be described later) in the resonator to provide a high-frequency surface emission type semiconductor laser.

The multilayered semiconductor mirror 214 may be formed in the same manner as in the other semiconductor layers 203-208, for example, through the MOCVD method. It is preferred that the semiconductor layers 203-208 and 214 are sequentially epitaxially grown within the same chamber. Further, the semiconductor layers 203-208 and 214 may be formed through the molecular-beam epitaxy method (MBE).

FIG. 13b shows a process of forming a layer of SiO.sub.2 212 on the top of the multilayered structure 203-208 and 214 by the use of thermal CVD process after epitaxial growth. The SiO.sub.2 layer 212 can function as an effective etching stop layer in a flattening process which will be described, if the film thickness thereof is proper.

FIG. 13c shows a forming process of a hard baked resist 213 which can be formed by applying a first photoresist on the SiO.sub.2 layer 212 with spin coating and then baking the first photoresist, for example, at 250.degree. C. for 1 hour. The hard baked resist 213 is patterned to provide a resist pattern 213a in an etching step shown in FIG. 13g. In an etching step of FIG. 13i, thereafter, the resist pattern 213a is utilized as a mask for forming a resonator having lateral sides which are perpendicular to the substrate.

FIG. 13d shows the formation of an etchable film 215 on the hard baked resist 213. The film 215 may be formed by vapor depositing Ti on the hard baked resist 213 using electron beam deposition, for example. Alternatively, the film 215 may be formed by sputtering of SiO.sub.2 or SiN. The thickness of the film 215 should be smaller than that of at least the hard baked resist 213 located under the film 215 and the thickness preferably ranges from 1000 Angstroms to 1 .mu.m. The film 215 is preferably as thin as possible. However, if the thickness of the film 215 is less than 1000 Angstroms, the film thickness will vary at every step. Therefore, it is more preferable if the film thickness ranges from 1000 Angstroms to 2000 Angstroms.

FIG. 13e shows the formation of a resist pattern 216 on the film 215. The resist pattern 216 may be provided by forming a second photoresist layer on the film 215 and then forming a pattern corresponding to the external diameter of the vertical resonator using the conventional photolithograph. At this time, the sides of the resist pattern 216 are not necessarily required to be perpendicular to the semiconductor substrate.

FIG. 13f shows the formation of a film pattern 215a by etching the film 215 using the resist pattern 216 as a mask. The etching of the film 215 may be either by wet etching with an acid solution such as buffer fluorine acid or dry etching with RIE using CF.sub.4 gas. The latter is superior to the former in pattern reproduction and/or yield.

Although the film 215 has been described to be formed of Ti, it may be replaced by SiO.sub.2 or SiN to provide the RIE etching similar to that described above.

FIG. 13g shows the etching of the hard baked resist 213 through the film pattern 215a as a mask after the resist pattern 216 has been removed. Since the film pattern 215a is of very small thickness, the film pattern 215a is macroscopically considered to be a pattern having sides perpendicular to the semiconductor substrate. Therefore, the side faces of the hard baked resist pattern 213a will also be perpendicular to the semiconductor substrate for the vertical sides of the film pattern 215a when the film 215a is used as a mask to etch the underlying hard baked resist 213 by the use of, for instance, O.sub.2 gas in the RIE process.

FIG. 13h shows the etching of the underlying layer of SiO.sub.2 212 using the hard baked resist pattern 213a as a mask by, for example, RIE process, after the film pattern 215a has been removed by etching. In such a manner, a mask usable in etching the vertical resonator of FIG. 13i will be completed. In the present embodiment, the etching mask for resonator is referred to as a three-layer mask since it comprises three layers, that is, the hard baked resist 213, film 215 and resist pattern 216, as shown in FIGS. 13c-13g.

FIG. 13i shows the same process as in FIG. 5b. More particular, FIG. 13i shows the etching of the cladding layer 205 up to the midway by use of the RIBE process, leaving a column-like light emitting portion covered with the hard baked resist pattern 213a. Since the sides of the hard baked resist pattern 213a are vertical and the etching is carried out along the vertical sides of the hard baked resist pattern 213a by the RIBE process, there may be provided a resonator having sides which are perpendicular to the substrate. The etching step is performed under the same conditions as in FIG. 5b. Since the multilayered semiconductor mirror 214 is formed of the same III-V group compound semiconductor as in the cladding, active and contact layers (205, 207, 206, 208), it may be etched and formed into a column-like configuration at the same time and under the same etching conditions as in the aforementioned layers 205-208. When the etching steps shown in FIGS. 13i and 5b are to be performed, the temperature of the substrate preferably ranges between 10.degree. C. and 40.degree. C. and more preferably between 15.degree. C. and 20.degree. C. By controlling the temperature of the substrate in such a manner, the temperature can be prevented from excessively increasing as the etching is being made to form the column-like light emitting portion. As a result, the etching rate can be maintained constant so that the resonator will have side faces perpendicular to the substrate surface.

FIG. 13j shows the formation of a buried layer 209 after the hard baked resist pattern 213a has been removed, the buried layer 209 being filled with the II-VI group compound semiconductor epitaxial layer. The buried layer 209 is preferably formed of any adduct organic metal through MOCVD process. This provides a process which may be carried out with lower temperatures. Since the cladding layer 205 is single crystalline, the buried layer grown on such a single crystal will also be a single crystal of ZnSSe 209. On the other hand, since the layer of SiO.sub.2 212 on the surface layer of the column-like resonator is polycrystalline, a polycrystalline layer of ZnSSe 209a will be formed on the layer 212. In addition, there is a difference in level between the surfaces of the layers 209 and 209a since the polycrystalline layer of ZnSSe 209a is formed protruding beyond the single crystalline layer of ZnSSe 209.

FIGS. 13k and 13l show a flattening process of providing the single crystalline layer of ZnSSe 209 which has its surface substantially flush with that of the contact layer 208.

Referring to FIG. 13k, a layer having a flat surface, such as a resist layer 220, is first formed on the layers of ZnSSe 209 and 209a which are different in crystalline structure from each other. The resist layer 220 may be formed by, for example, the conventional spin coating process, but is preferably formed by using a resist liquid having a reduced viscosity so that the resist layer 220 can have its flat surface over the layers 209 and 209a of which surfaces are different in level from each other. After the resist layer 220 has been formed by the spin coating process, it may be heated. In such a case, the viscosity in the resist layer 220 can be reduced so that the surface thereof can be flattened. The flat layer can be formed of any suitable material which is easily made into a layer and is not different in etching rate from the single crystalline and polycrystalline ZnSSe layers 209 and 209a, such as polyimide.

FIG. 13l shows the etching step of the resist layer 220, polycrystalline ZnSSe layer 209a and single crystalline ZnSSe layer 209. In this etching step, it is important that the polycrystalline ZnSSe layer 209a is fully etched while at the same time the single crystalline ZnSSe layer 209 is etched without creation of any difference in level from the surface of the column-like light emitting portion or contact layer 208. If both the layer 209a and 209 are etched without formation of the resist layer 220, the etching will proceed while forming the top of the column-like resonator into an upwardly convex configuration. This means that the thickness of the single crystalline ZnSSe layer 209 surrounding the surface of the column-like resonator or contact layer 208 is reduced when the contact layer 208 is exposed by etching. In other words, the surface of the single crystalline ZnSSe layer 209 will become lower than the surface of the contact layer 208. When the thickness of the single crystalline ZnSSe layer 209 is reduced in such a manner, the function of the buried layer is degraded by a reduced magnitude of thickness so that the current will tend to leak, with the reactive current undesirably being increased. In addition, electrode 210 to be formed on the surfaces of both the contact and buried layers 208, 209 will tend to be cut if there is a difference in level between these surfaces. Such a difference in level provides flashes which damage the electrical connection and reduce the yield.

Since the resist layer 220 is formed to have a flat surface in the present embodiment, the layers 209, 209a and 220 can be etched while maintaining their surfaces flat. This is because the layers 209, 209a and 220 have substantially the same etching rate. When the polycrystalline ZnSSe layer 209a has been completely etched, the underlying layer of SiO.sub.2 212 will be exposed. However, the etching is continued. Since the etching rate of the layer of SiO.sub.2 212 is lower than that of the single crystalline ZnSSe layer 209, the layer of SiO.sub.2 212 will necessarily remain when the surface of the layer 209 is etched to be flush with that of the contact layer 208. If the end of etching in the single crystalline ZnSSe layer 209 is set depending on the state of exposure of the layer 212, the etching can be carried out without making any difference in level between the contact and buried layers 208, 209. The end of etching may be set by either of an etching time period control process or a process for detecting a plasma emitting spectrum produced when SiO.sub.2 is etched. In either case, it is required to preset the thickness of the SiO.sub.2 layer 212 so that it can be completely exposed at the end of etching. Although the present embodiment has been described as to the formation of the etching stop layer 212 from SiO.sub.2, the etching stop layer 212 may be formed of any other suitable material such as SiN if it fulfills two conditions, that is, (1) the material is of a polycrystalline structure and (2) the material has an etching rate lower than that of the II-VI group compound semiconductor layer.

Subsequently, the steps shown in FIGS. 13m-13p are carried out to form a p-type ohmic electrode 210, an SiO.sub.2 /a-Si dielectric multilayered film mirror 211 and an n-type ohmic electrode 201. These steps are different from the steps of FIGS. 5d and 5e in that the p-type ohmic electrode 210 is formed prior to formation of the multilayered film mirror 211. More particularly, the step of FIG. 13m forms a resist pattern 217 on the surface of the contact layer 208 at an area having a diameter which is smaller than that of the resonator. This area becomes an opening. Thereafter, the step of FIG. 13n deposits the p-type ohmic electrode 210 on the buried layer 209 and the resist pattern 217. Subsequently, this component is immersed in an organic solvent such as acetone to dissolve the resist pattern 217. At the same time, the p-type ohmic electrode 210 is removed from the resist pattern 217 to form an opening 218 having no electrode on the surface of the resonator, as shown in FIG. 13o. This is called "electrode lifting-off". As shown in FIG. 13p, the dielectric multilayered film mirror 211 is formed over the opening 218 by, for example, electric beam deposition.

Alternatively, the multilayered dielectric mirror 211 may be formed through the sputtering deposition or vacuum deposition.

The multilayered dielectric mirror 211 will further be described. For example, it is formed by depositing two pairs of dielectric layers, that is, third dielectric (e.g., SiO.sub.2) layers and fourth dielectric (e.g., a-Si) layers having their refractive index different from that of the third layers. The absorption coefficient of the third and fourth layers for emission wavelength in the multilayered dielectric mirror 211 is preferably equal to or lower than 100 cm.sup.-1 and more preferably equal to or lower than 50 cm.sup.-1.

In this embodiment, the mirror of the optical resonator on the light exit side is formed by the column-like multilayered semiconductor mirror 214 and the multilayered dielectric mirror 211 located at the opening 218 of the electrode 210. Thus, the total reflectivity for an emission wavelength equal to 870 nm in the two mirrors 211 and 214 can be set to be equal to or more than 96%. The multiple reflection efficiency in the optical resonator can be improved. Since the total reflectivity is lower than the reflectivity for the emission wavelength of the multilayered semiconductor mirror 204 near the substrate 202, the laser beam can be emitted through the multilayered dielectric mirror 211 at the end of the optical resonator. If it is required to provide the reflectivity equal to or higher than 96% only by the use of the multilayered semiconductor mirror 214, forty or more semiconductor layers must be controllably formed. It is very difficult to accomplish this. In this case, further, the total electrical resistance of forty or more semiconductor layers in the direction of deposition is very high, which increases the device resistance in the surface emission type semiconductor laser. Therefore, this embodiment is more advantageous with respect to such conditions.

When the column-like multilayered semiconductor mirror 214 is particularly provided, the reflective region is enlarged downward beyond the O-type ohmic electrode 210, unlike provision of only the multilayered dielectric mirror 211. Thus, the reflectivity below the P-type ohmic electrode 210 can be increased. This can improve the multiple reflection efficiency in the optical resonator to provide a high-efficiency surface emission type semiconductor laser.

Because of the presence of the multilayered semiconductor mirror 214, the reflection region of the multilayered dielectric mirror 211, that is, the area of the opening 218 in the electrode 210 can be reduced. This can increase the contact area between the contact layers 208 and the electrode 210 to decrease the resistance therein. As a result, heat is less procured at the contact area. Consequently, the surface emission type semiconductor laser can be improved in efficiency and reliability.

In the method according to this embodiment, the multilayered semiconductor mirror 214 among the light exit side mirrors can be grown continuously on the substrate 202, as in the semiconductor layers 203-208 forming the optical resonator. Thereafter, the multilayered semiconductor mirror 214 may be etched and formed into a column-like configuration under the same etching conditions as in the semiconductor layers 205-208. Therefore, the semiconductor laser may be produced in a more simple and stable manner with an improved reproductivity.

FIG. 14 is a perspective view showing the cross-section of the light emitting part of a semiconductor laser 400 which is another embodiment of the present invention. This semiconductor laser is different from the previously described embodiments mainly in that the buried layer of the present embodiment embedded around the periphery of the resonator is formed of a different material. Steps for producing the semiconductor laser will be described sequentially.

On a n-type GaAs substrate 402, n-type Al.sub.0.8 Ga.sub.0.2 As and n-type Al.sub.0.15 Ga.sub.0.85 As layers are alternately deposited 40 times to form a distributed reflection type multi-layer film (DBR) mirror having 99.5% or more reflectance relative to light having its wavelength equal to about 800 nm. After a n-type Al.sub.0.7 Ga.sub.0.3 As clad layer 404 has further been formed, an active layer 405 of quantum-well structure is formed by alternately depositing n-type GaAs well and n-type Al.sub.0.3 Ga.sub.0.7 As barrier layers. It is desirable that the film thickness of the well layer ranges between 40 and 120 .ANG. and is preferably equal to 61 .ANG.; the film thickness of the barrier layer ranges between 40 and 100 .ANG. and preferably is equal to 86 .ANG.; and the total number of well layers ranges between 10 and 40 and preferably is equal to 21. Thus, the surface emission type semiconductor laser can be reduced in threshold value, increased in output and improved in temperature characteristic and oscillating wavelength reproduction.

Thereafter, p-type Al.sub.0.7 Ga.sub.0.3 As clad layer 406 and p-type Al.sub.0.15 Ga.sub.0.85 As contact layer 409 are sequentially deposited. Each of these layers may be formed through the organic metal vapor growth process as in the embodiment shown in FIG. 1.

After formation of all the layers, the laminated assembly is etched to the intermediate depth of the p-type Al.sub.0.7 Ga.sub.0.3 As clad layer 406 through the reactive ion beam etching process (which will be referred to as the RIBE process), leaving a column-like light emitting part covered with resist. This provides a column-like resonator part having the same cross-section as the profile of the overlying resist layer.

A buried layer is next formed over the p-type Al.sub.0.7 Ga.sub.0.3 As clad layer 406. The buried layer is formed of a material different from those of the previously described embodiments. In the present embodiment, after the resist has been removed, an insulation silicon compound film 407 and a flattening layer 408 are formed.

The insulation silicon compound film 407 may be formed of any one selected from a group consisting of silicon oxides (SiOx) such as SiO.sub.2, silicon nitrides (SiNx) such as Si.sub.3 N.sub.4, silicon carbides (SiCx) such as SiC and the like. The insulation silicon compound film 407 may be formed through any process selected from a group consisting of normal pressure/thermal CVD, reduced pressure/thermal CVD, plasma CVD, reactive deposition and the like, depending on the material used. In the present embodiment, the insulation silicon compound film 407 is formed of SiOx such as SiO.sub.2. The SiOx film 407 is formed through the normal pressure/thermal CVD process, preferably, into a film thickness ranging between 500 and 2000 .ANG.. During the process, the temperature of the substrate was set at 450.degree. C.; and the process gas included monosilane (SiH.sub.4) in the flow rate of 9 sccm, oxygen (O.sub.2) in the flow rate of 50 sccm, and a carrier gas or nitrogen (N.sub.2) in the flow rate of 5 slm. The growth speed of SiOx was 12.5 .ANG./min.

The flattening insulating layer 408 is preferably formed of a material workable at a temperature lower than the working temperature of the insulation silicon compound film 407, such as SOG (Spin On Glass). Alternatively, the flattening insulation layer may be formed of polyimide film. The film thickness of SOG film may range between 0.5 .mu.m and 1.5 .mu.m, while the film thickness of polyimide film may range between 4 .mu.m and 6 .mu.m. In any event, the film may be formed through the spin coating step and the subsequent baking step. The reason why the film thickness of the SOG film is smaller than that of the polyimide film is because the SOG film having an increased film thickness tends to be cracked in the baking step. In addition, the flattening insulation layer 408 may be formed of a polycrystalline II-VI group compound semiconductor film such as ZnSe or an insulation silicon compound (e.g., SiOx, SiNx, SiCx or the like) workable through a process of lower temperature than that of the film 407. For example, if an SiOx film such as SiO.sub.2 is formed through electron beam deposition, the flattening insulation silicon compound layer can be formed at a temperature lower than that of the heat CVD process. In the present embodiment, a vitreous solution containing 20% of SiO.sub.2 by weight was applied on a substrate to form the SOG film 408 while spinning the substrate at 3000 r.p.m. for 20 seconds. Thereafter, the substrate including the SOG film thereon was sequentially baked at 80.degree. C. for one minute, at 150.degree. C. for two minutes and at 300.degree. C. for 30 minutes in an atmosphere of N.sub.2.

The SOG film 408 was etched back and flattened flush with the surface of the exposed contact layer 409 through the reactive ion etching (RIE) process, which used parallel flat plate-like electrodes, a reactive gas in the form of a mixture containing SF.sub.6 and Ar in a ratio of 1:1 and a chamber pressure equal to 20 mTorr. The etching rate was equal to 1000 .ANG./min.

Since the etching rate of SiOx layer 407 is lower than that of layer 408, the SiOx layer 407 was left unetched. Thereafter, after the above etching process, only the SiOx layer 407 was etched so as to flatten with the surface of SOG layer 408 and contact layer 409. This was accomplished by using the same RIE process under such conditions that CHF.sub.3 gas was introduced as a reactive gas into the chamber with its internal pressure equal to 18 mTorr. The etching rate was equal to 400 .ANG./min.

Subsequently, a contact electrode 412 is formed in ring-like contact with the contact layer 409. The contact layer is exposed through the circular opening of a contact electrode 612. A dielectric multi-layer film mirror 411 is formed sufficiently over the exposed surface. The mirror 411 is formed by depositing an SiOx layer such as SiO.sub.2 and a Ta.sub.2 O.sub.5 layer alternately seven times, for example, and has 98.8% or more reflectance relative to light having a wavelength of about 800 nm. In the present embodiment, the mirror 411 is formed not only in the opening of the electrode 412, but also over the electrode 412 to ensure the desired thickness of the seven-pairs layered laminate. The Ta.sub.2 O.sub.5 layer defining the dielectric multi-layer film mirror 411 may be replaced by ZrOx film, ZrTiOx film or TiOx film. Since the mirror 411 is not of a structure in which the electric current flows through the mirror itself as in the P-type DBR mirror, its resistance can be reduced. Thus, the surface emission type semiconductor laser can be reduced in threshold level and improved in external differential quantum efficiency.

Thereafter, an electrode 401 consisting of Ni and Au-Ge alloy is formed under the substrate 402 to complete the surface emission type semiconductor laser 400.

A forward voltage is applied between upper and lower electrodes 412, 401 to inject the current into the semiconductor laser (in the present embodiment, the voltage is applied in a direction from the upper electrode toward the lower electrode). The injected current is converted into light at the quantum-well type active layer 405. The light is reciprocated and amplified between the reflecting mirrors, that is, the n-type DBR mirror 403 and the dielectric multi-layer film mirror 411. Thus, a laser beam will be emitted through the opening in the first direction shown by 410.

The silicon oxide or SiOx film 407 such as SiO.sub.2 shown in FIG. 14 is formed through the normal pressure/thermal CVD process (vapor growth process) with the film-thickness ranging between 500 .ANG. and 2000 .ANG.. The flattening insulation layer 408 is required to flatten the surface of the element. For example, the flattening insulation layer made of heat-resistant resin can increase the resistance, but tends to produce a residual moisture in the film. If such a film is placed in direct contact with the semiconductor layer, voids may be created in the interface between the flattening insulation layer and the semiconductor layer to degrade the characteristics of the element when it is electrically energized for a long time. If the film 407 such as silicon oxide film is formed in the interface between the flattening insulation layer and the semiconductor layer, however, the silicon oxide film 407 serves as a protection layer to prevent the degradation of the element.

Although the silicon oxide film 407 may be formed by any one of plasma CVD, reactive deposition and other suitable processes, it was most suitably formed through the normal pressure/thermal CVD process that used SiH.sub.4 (mono-silane) and O.sub.2 (oxygen) gasses and utilized N.sub.2 (nitrogen) gas as a carrier gas. This is because when the normal pressure/thermal CVD process is carried out under the atmosphere and forms the film under such a condition that O.sub.2 is excessively used, the SiOx film becomes more dense with less deficit of oxygen and the step coverage is improved to provide the same thickness on the sides of the column-like resonator and on the clad layer 406. In addition, the vapor growth will not change the resonator configuration due to melt-back, unlike the liquid phase growth.

The other reason why the thin silicon oxide film 407 is formed is that impurities (e.g., sodium, chlorine, heavy metals) contained in the subsequently formed insulator 408 can be prevented from heat-diffusing into the underlying p-type clad layer 406 and quantum-well type active layer 405. The thin silicon oxide film 407 may only have a sufficient film-thickness to arrest the impurities. Since the thin silicon oxide film 407 is formed through the thermal CVD process, it is more dense than that of the subsequently formed insulator 408. Since the present embodiment utilizes the thermal CVD process, however, the silicon oxide film 407 is formed into a multilayered film having an increased thickness, in consideration of the influence of heat to the element. In other words, the present embodiment provides a double-layered structure comprising the thin silicon oxide film 407 and the insulator 408, which can be formed at a lower temperature without need of the dense structure. It is therefore preferred that the silicon compound film 407 has its film-thickness equal to or larger than 500 .ANG. in such a view point that the impurities are prevented from diffusing from the flattening insulation layer 408. More particularly, the film-thickness of the silicon compound film 407 is equal to or smaller that 2000 .ANG. in such a view point that the process time is shortened to reduce the adverse affects of heat. However, the process condition, particularly the process temperature, may be lowered to form the buried layer of only a single silicon compound layer 407.

It is further preferred that the p-type clad layer 406, having its thickness ranging between 0 and 0.58 .mu.m, remains between the buried layers 407, 408 and the quantum-well type active layer 405. This film-thickness preferably ranges between 0 and 0.35 .mu.m. As a result, the surface emission type semiconductor laser will not have an interface recombination current at the buried layer parts and can be improved in efficiency and reliability.

The buried layers 407, 408 provided by the present embodiment may be used to form grooves for separating the column-like parts from one another as shown in the embodiment of FIG. 6. Thus, laser beams can be emitted from a plurality of light emitting portions corresponding to the respective column-like parts in phase-locked relationship. The buried layers 407, 408 embedded in the separating grooves can be made of a material substantially transparent to the wavelength of the laser beam. For example, if the buried layers are formed of SiOx or SiNx, they will be substantially transparent to the laser beam wavelength. As in the embodiment shown in FIG. 6, therefore, the laser oscillation can more effectively be performed not only by the laser beams from the light emitting portions but also by any light leaked into the buried layers to increase the light emission spot. The light emitting parts formed in the column-like parts may be arranged in a line.

It is to be understood that the surface emission type semiconductor laser of the present invention may be equivalently applied to any desirable light source in various devices such as printers, copying machines, facsimile machines, displays, and so on.

Claims

1. A surface emission type semiconductor laser for emitting light in a direction perpendicular to a substrate, comprising:

an optical resonator including a pair of reflection mirrors respectively located on the substrate and light exit sides thereof and a plurality of semiconductor layers formed between said reflection mirror pair, at least a cladding layer among said semiconductor layers being formed into at least one column-like portion;

a buried layer buried around said column-like portion; and

an electrode including a light exit port formed therein at a position opposite to the light exit end of said column-like portion, the light exit side reflection mirror being disposed in said light exit port,

said reflection mirror disposed in said light exit port comprising a multilayered dielectric mirror,

a multilayered semiconductor mirror being further provided at said column-like portion nearer the light exit side than said cladding layer.

2. A surface emission type semiconductor laser as defined in claim 1 wherein said multilayered semiconductor mirror is formed by alternately depositing first layers of a III-V group compound semiconductor and second layers of another III-V group compound semiconductor having their refractive index different from that of said first layers.

3. A surface emission type semiconductor laser as defined in claim 1 wherein said multilayered dielectric mirror is formed by alternately depositing first dielectric layers and second dielectric layers having their refractive index different from a refractive index of said first dielectric layers.

4. A surface emission type semiconductor laser as defined in claim 3 wherein an absorption coefficient of said first and second dielectric layers for emission wavelength is equal to or lower than 100 cm.sup.-1.

5. A surface emission type semiconductor laser as defined in claim 1 wherein the reflectivity of emission wavelength in said multilayered semiconductor mirror is higher than that of said electrode.

6. A surface emission type semiconductor laser as defined in claim 5 wherein a total reflectivity for emission wavelength in said multilayered dielectric and semiconductor mirrors is equal to or higher than 96% and also lower than the reflectivity of said reflection mirror on the substrate side.

7. A surface emission type semiconductor laser as defined in claim 1 wherein said buried layer is a II-VI group compound semiconductor epitaxial layer.

8. A surface emission type semiconductor laser as defined in claim 1 wherein said buried layer includes an insulation silicon compound which covers at least the interface between said buried layer and said optical resonator.

9. A surface emission type semiconductor laser as defined in claim 8 wherein said insulation silicon compound is one selected from a group consisting of silicon oxides, silicon nitrides and silicon carbides.

10. A surface emission type semiconductor laser as defined in claim 8 wherein said buried layer includes an insulation layer for flattening the periphery of said column-like portion, said flattening insulation layer being formed over a thin film formed of said insulation silicon compound.

11. A surface emission type semiconductor laser as defined in claim 10 wherein said flattening insulation layer is formed of one selected from a group consisting of SOG films, heat-resistant resin films, polycrystalline II-VI group compound semiconductor films and other insulation silicon compound films formed at a temperature lower than that of said insulation silicon compound films.