Claims
- 1. A surge absorption device comprising:
- a first semiconductor region having a first surface portion and exhibiting conductivity of one type;
- a second semiconductor region formed in contact with said first surface portion of said first region and exhibiting conductivity of the type opposite to that of said first region to form a first pn junction between itself and said first region;
- at least one third region formed in contact with said second region so as to determine the effective thickness of said second region which correspond to the distance between said first region and at least one third region;
- at least one fourth semiconductor region formed in contact with said first region, spaced apart from said second region and forming a second pn junction between itself and said first region for causing minority carriers of a kind the same as that of minority carriers in said first region to be injected therethrough into said first region when a depletion layer formed by application of reverse bias across said first pn junction has reached said at least one third region to form a punch-through region in said second region;
- a fifth semiconductor region provided with a first ohmic electrode, formed in contact with said at least one fourth region to form a third pn junction between itself and said at least one fourth region, said fifth region also formed in contact with said first region; and
- said at least one third region being also one capable of injection minority carriers of a kind the same as that of minority carriers in said second region into said second region after the formation of said punch-through region.
- 2. A surge absorption device according to claim 1, further comprising a second ohmic electrode in contact with said second semiconductor region and at least one third region.
Priority Claims (5)
Number |
Date |
Country |
Kind |
60-26498 |
Feb 1985 |
JPX |
|
60-100400 |
May 1985 |
JPX |
|
60-203447 |
Sep 1985 |
JPX |
|
60-203448 |
Sep 1985 |
JPX |
|
60-292969 |
Dec 1985 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 06/829,516, filed on Feb. 14, 1986, now abandoned.
US Referenced Citations (8)
Foreign Referenced Citations (5)
Number |
Date |
Country |
2431011 |
Jan 1975 |
DEX |
51-44069 |
Nov 1976 |
JPX |
53-24796 |
Jul 1978 |
JPX |
56-30708 |
Jul 1981 |
JPX |
58-161378 |
Sep 1983 |
JPX |
Non-Patent Literature Citations (2)
Entry |
Sze, Physics of Semiconductor Devices, (Wiley, N.Y., 1981), pp. 613-619. |
Thyristor-Electronics (1), Thyristor Device, by Editorial Committee, (1973, Maru-Zen K.K., Tokyo, publ.). |
Continuations (1)
|
Number |
Date |
Country |
Parent |
829516 |
Feb 1986 |
|