SUSPENSION CAPABLE OF REDUCING LOSS OF HIGH FREQUENCY SIGNAL

Abstract

A suspension including a supporting layer, a conductive layer, and a dielectric layer. The conductive layer is formed as a plurality of traces. The supporting layer is formed of a rigid material to support the conductive layer. The dielectric layer is formed between the supporting layer and the conductive layer and is formed of a dielectric material with a permittivity of 1.0 to 3.0 F/m. Thus, a loss of a high frequency signal during the transmission of electrical signals can be prevented and the writing/reading performance of a hard disk drive apparatus can be improved.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects and utilities of the present general inventive concept will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

FIG. 1 is a schematic view of a conventional suspension;

FIG. 2A illustrates another conventional suspension, and FIG. 2B illustrates another conventional suspension;

FIG. 3 is a cross-sectional view illustrating a suspension according to an embodiment of the present general inventive concept;

FIG. 4 is a perspective view illustrating a suspension according to another embodiment of the present general inventive concept;

FIG. 5A is a graph illustrating a loss of high frequency signals in a frequency domain according to an embodiment of the present general inventive concept, and FIG. 5B is a graph illustrating a loss of high frequency signal in a time domain according to an embodiment of the present general inventive concept; and

FIG. 6A is a graph illustrating a simulation of loss of high frequency signals in a frequency domain according to an embodiment of the present general inventive concept, and

FIG. 6B is a graph illustrating a simulation of loss of high frequency signals in a time domain according to an embodiment of the present general inventive concept.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Reference will now be made in detail to the embodiments of the present general inventive concept, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. The embodiments are described below in order to explain the present general inventive concept by referring to the figures.

FIG. 3 is a cross-sectional view illustrating a suspension according to an embodiment of the present general inventive concept.

Referring to FIG. 3, the suspension includes a conductive layer 310 formed of copper which is highly conductive, a supporting layer 330 formed of stainless steel, which has a low conductivity, and a dielectric layer 320 disposed between the conductive layer 310 and the supporting layer 330, and formed of Duroid with a permittivity of about 2.8 farads/meter (F/m). The conductive layer 310 functions as a trace through which electrical signals are transmitted.

In an embodiment of the present general inventive concept, the supporting layer 330 may be formed of a rigid material such as titanium or beryllium copper, rather than stainless steel. A plurality of openings may be formed in the center of the supporting layer 330. The openings are provided to minimize the formation of a return current, which is generated in the supporting layer 330 and may be formed in the shape of a rectangle or square.

The conductive layer 310 is formed as a plurality of traces, which may be separate by a predetermined distance from one another and arranged symmetrical to one another. FIG. 3 illustrates two traces; however, the number of the traces may vary, for example, according to the number of magnetic disks.

The dielectric layer 320 is disposed between the supporting layer 330 and the conductive layer 310. The dielectric layer 320 according to the current embodiment of the present general inventive concept may be formed of a dielectric material called Duroid. The Duroid has low permittivity, and reduces capacitive coupling generated between the conductive layer 310 and the supporting layer 330.

The dielectric material of the dielectric layer 320 may have a permittivity of 1.0 to 3.0 F/m. The dielectric layer 320 is formed of a dielectric material having the low permittivity as described above and can be further understood from the analysis of the Equation 1 below.

$\begin{array}{cc}C={\varepsilon }_0*{\varepsilon }_r*\frac{A}{h}& \left[\mathrm{Equation}1\right]\end{array}$

Referring to Equation 1 above, a capacity C varies according to specific permittivity ε_r, surface area A, height h and the permittivity of free space ε₀. However, a reduction in the surface area A or the height h is limited. Thus, in the current embodiment of the present general inventive concept, the specific permittivity ε_r is reduced as compared to the conventional art in order to minimize the capacitive coupling generated between the conductive layer 310 and the supporting layer 330. As a result, the loss of the return current can be reduced despite using the supporting layer 330, which has a high resistance.

The material forming the dielectric layer 320 according to the current embodiment of the present general inventive concept has a permittivity of 1.0 to 3.0 F/m. Examples of such material forming the dielectric layer 320 are poly tetra fluoro ethylene (PTFE), Duroid, and Air-Form.

PTFE has good dielectric characteristics, is stable over a wide range of frequencies and temperature, and has a low permittivity of about 2.1 F/m. Duroid has a permittivity of about 2.8 F/m, and air form has a permittivity of about 1.1 F/m. Also, other dielectric materials with a permittivity from 1.0 to 3.0 F/m may also be used.

If the dielectric layer 320 is formed of a dielectric material with a permittivity of 3.0 F/m or less, the capacitive coupling generated between the conductive layer 310 and the supporting layer 330 when electrical signals are transmitted through the conductive layer 310 can be reduced as compared to the conventional art, and thus, a loss of the return current flowing through the supporting layer 330 can be reduced.

Accordingly, a loss of a high frequency signal generated by the return current flowing through the supporting layer 330, which has a low conductivity, can be reduced, and thus, a fast rising time of electrical signals transmitted to a magnetic head through the suspension can be secured.

FIG. 4 is a perspective view illustrating a suspension according to another embodiment of the present general inventive concept.

Referring to FIG. 4, the suspension includes a supporting layer 430 at the bottom of the suspension and a dielectric layer 420 formed on the supporting layer 430, wherein the supporting layer 430 and the dielectric layer 420 are formed parallel to each other. The supporting layer 430 and the dielectric layer 420 may be combined using a coating agent. A plurality of first and second traces 412 and 414 in the shape of a long strip are arranged on the dielectric layer 420 at a predetermined interval from each other.

The first and second traces 412 and 414 are formed of a highly conductive material so that electrical signals can be continuously transmitted through the first and second traces 412 and 414. As described above, the first and second traces 412 and 414 may be formed of a copper alloy, rather than pure copper. The copper alloy refers to an alloy containing 80% copper or more.

The first and second traces 412 and 414 are arranged symmetrically with respect to one another. Thus, electrical signals are transmitted via the first trace 412 from a preamplifier (not illustrated) to a magnetic head (not illustrated), and reversibly, from the magnetic head via the second trace 414 to the preamplifier. The electrical signals transmitted through the first trace 412 and the second trace 414 have the same frequency, amplitude, and opposite phases.

FIG. 5A is a graph illustrating a loss of high frequency signals in a frequency domain according to an embodiment of the present general inventive concept, and FIG. 5B is a graph illustrating a loss of a high frequency signal in a time domain according to an embodiment of the present general inventive concept.

S1 denotes signals output from the preamplifier, and S2 denotes signals transmitted to a magnetic head through a suspension having a dielectric layer formed of a material with a low permittivity, and S3 denotes signals transmitted to a magnetic head through a suspension having a dielectric layer formed of a material with high permittivity. In addition, f₁, f₂₁, f₂₂, and f₂₃ denote corner frequencies, and f₂₁, f₂₂, and f₂₃ corner frequencies can be represented by the following equations.

$\begin{array}{cc}{f}_{21},f_{22},f_{23}=\frac{1}{\pi t_r}& \left[\mathrm{Equation}2\right]\end{array}$

A first corner frequency f₁ has a predetermined value according to the transmission speed, however, f₂₁, f₂₂, and f₂₃ vary according to the rising time tr. In particular, referring to FIG. 5B, the rising times of S3 and S2 differ from the rising time of S1 by Δ=t_r3−t_r1 and Δ=_r2−t_r1, respectively. Such difference is due to the difference between the permittivity and becomes greater as the frequency band increases.

FIG. 6A is a graph illustrating a simulation of loss of high frequency signals in a frequency domain according to an embodiment of the present general inventive concept, and FIG. 6B is a graph illustrating a simulation of loss of high frequency signals in a time domain according to an embodiment of the present general inventive concept. In the present simulation, the permittivity of the dielectric layer of the suspension varied as 2.0, 2.5, 3.0, and 3.5 F/m, to compare the loss of output signals through the suspension according to the frequency.

Referring to FIG. 6A, the gain in terms of decibels of an electric signal at a frequency of about 1 GHz is −2.62 dB at a permittivity of 1.5 F/m, −2.86 dB at a permittivity of 2.0 F/m, −3.06 dB at a permittivity of 2.5 F/m, and −3.27 dB at a permittivity of 3.0 F/m. Such a difference in the gain in terms of decibels according to the permittivity increases as the frequencies increase due to the skip depth effect which is a phenomenon of a current being focused onto a surface of a conductor.

Also, variations of the gain in terms of decibels of an electric signal at a frequency of about 10 GHz is −9.23 dB at a permittivity of 1.5 F/m, −10.20 dB at a permittivity of 2.0 F/m, −11.07 dB at a permittivity of 2.5, −11.94 dB at a permittivity of 3.0, and −12.58 dB at a permittivity of 3.5 F/m. That is, the lower the permittivity, the smaller the loss of a high frequency signal.

The above loss of gain that varies according to the permittivity can be represented as illustrated in Table 1 below.

TABLE 1
Permittivity
(F/m)
vs
frequency	εr = 1.5	εr = 2.0	εr = 2.5	εr = 3.0	εr = 3.5
0.1 GHz	−0.42	−0.47	−0.50	−0.54	−0.59
1.0 GHz	−2.62	−2.86	−3.06	−3.27	−3.48
2.0 GHz	−3.90	−4.32	−4.67	−5.01	−5.32
5.0 GHz	−5.97	−6.58	−7.13	−7.68	−8.13
10.0 GHz	−9.23	−10.20	−11.07	−11.94	−12.58
15.0 GHz	−12.24	−13.54	−14.71	−15.88	−16.88
20.0 GHz	−14.85	−16.43	−17.86	−19.30	−20.24

Referring to FIG. 6B, the time required to reach 80% of a peak voltage (assumed to be about 25 mV, here), was 0.33 ns at a permittivity of 1.5 F/m, 0.38 ns at a permittivity of 2.0 F/m, 0.40 ns at a permittivity of 2.5 F/m, 0.45 ns at a permittivity of 3.0 F/m, and 0.49 ns at a permittivity of 3.5 F/m.

In addition, the peak voltage was 275 mV at a permittivity of 1.5 F/m, 273 mV at a permittivity of 2.0 F/m, 272 mV at a permittivity of 2.5 F/m, 260 mV at a permittivity of 3.0 F/m, and 258 mV at a permittivity of 3.5 F/m. Such result indicates that not only an AC component decreases; however, also a DC component decreases according to the permittivity of the dielectric layer forming the suspension.

The rising time functions as a reference determine whether a high-speed operation of a hard disk drive apparatus is possible. Accordingly, the shorter the rising time, the more likely the high speed operation is possible. Accordingly, when a dielectric material, having the permittivity according to the present general inventive concept, is used in a suspension, a loss of a high frequency signal can be highly reduced, and a fast rising time can be obtained that is very advantageous for high speed operations.

The above amplitude of voltage that varies according to the permittivity can be represented as illustrated in Table 2 below.

TABLE 2
Permittivity
(F/m)
vs
time	εr = 1.5	εr = 2.0	εr = 2.5	εr = 3.0	εr = 3.5
0.25 ns	66.49	17.90	3.37	0.32	0.11
0.30 ns	172.61	102.78	66.06	22.90	2.47
0.35 ns	212.75	181.51	153.64	95.21	44.64
0.40 ns	229.38	210.50	200.92	173.74	129.83
0.45 ns	239.12	224.35	217.86	200.30	181.08
0.50 ns	246.77	234.97	229.97	216.32	203.23
0.55 ns	252.07	241.58	238.59	226.81	215.91
0.60 ns	256.56	247.00	246.15	235.75	226.19
0.65 ns	260.01	251.07	250.16	242.98	234.20
0.70 ns	262.50	254.01	254.60	248.69	240.25

As described above, according to various embodiments of the present general inventive concept, the suspension can reduce coupling generated between the conductive layer and the dielectric layer by the variation of the permittivity of the dielectric material without requiring additional processes or without a decrease in the implemental performance as compared to the conventional suspension. Thus, a loss of a high frequency signal due to a reduction in the return current when performing high frequency operations can be prevented, and thus, a fast rising time of signals can be obtained. Accordingly, the writing/reading capacity of the magnetic hard disk drive apparatus can be improved.

Although a few embodiments of the present general inventive concept have been illustrated and described, it will be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the general inventive concept, the scope of which is defined in the appended claims and their equivalents.

Claims

1. A suspension to support a reading/recording head, comprising: a conductive layer formed as one or more traces;a supporting layer to support the conductive layer; anda dielectric layer formed between the supporting layer and the conductive layer and formed of a dielectric material with a permittivity in a range of substantially 1.0 to 3.0 farads/meter (F/m).

2. The suspension of claim 1, wherein the dielectric material is poly tetra fluoro ethylene (PTFE).

3. The suspension of claim 1, wherein the dielectric material is Duroid.

4. The suspension of claim 1, wherein the dielectric material is Air-Form.

5. The suspension of claim 1, wherein the supporting layer is formed of a rigid material having a low conductivity.

6. The suspension of claim 5, wherein the rigid material is stainless steel.

7. The suspension of claim 1, wherein a plurality of openings are formed in a center of the supporting layer.

8. The suspension of claim 1, wherein the conductive layer is formed of pure copper or a copper alloy.

9. A disk drive apparatus, comprising: a head unit;a conductive layer formed as one or more traces to conduct one or more electrical signals between the head unit and a signal source;a supporting layer to support the conductive layer; anda dielectric layer formed between the supporting layer and the conductive layer and formed of a dielectric material with a permittivity in a range of substantially 1.0 to 3.0 farads/meter (F/m).

10. The apparatus of claim 9, wherein the signal source is a preamplifier.

11. The apparatus of claim 9, wherein the one or more electrical signals are conducted between the head unit and the signal source through a head slider unit.

12. The apparatus of claim 9, wherein the supporting layer comprises: a rigid material.

13. The apparatus of claim 9, wherein the dielectric material comprises: at least one of poly tetra fluoro ethylene (PTFE), Duroid and Air-Form.

14. A head gimbal assembly (HGA), comprising: a head slider unit; a conductive layer formed as one or more traces to conduct one or more electrical signals between the head slider unit and a signal source;a supporting layer to support the conductive layer; anda dielectric layer formed between the supporting layer and the conductive layer and formed of a dielectric material with a permittivity in a range of substantially 1.0 to 3.0 farads/meter (F/m).

15. A head stack assembly (HSA), comprising: an actuator unit; anda head gimbal assembly (HGA) coupled to the actuator unit, the HGA including: a head slider unit;a conductive layer formed as one or more traces to conduct one or more electrical signals between the head slider unit and a signal source;a supporting layer to support the conductive layer; anda dielectric layer formed between the supporting layer and the conductive layer and formed of a dielectric material with a permittivity in a range of substantially 1.0 to 3.0 farads/meter (F/m).