The present invention generally relates to a switched capacitor multilevel inverter (SCMLI) and, more particularly, to a new family of hybrid SCMLI for high frequency power distribution system.
NASA has introduced the high-frequency AC (HFAC) power distribution system (PDS) for space applications, as it offers several merits over the conventional DC power distribution. HFAC PDS is also an attractive solution to other applications like telecom, electric vehicles and renewable energy micro grids. The high frequency inverters have advantages like reduced high order hat monies and low current ripple harmonics in induction motor drives. Power converters play a major role in microgrids due to their advantages like being efficient, reliable, managed heat distribution and high power density. Multilevel inverters (MLIs) are one of the emerging converters owing to their several structural benefits in terms of easy extension, reduced voltage stress (dv/dt) and having equal load sharing and efficient energy harvesting making them highly suitable for various renewable energy applications. Among several MLIs, switched capacitor MLIs (SCMLI) are the most widely used because of the features of voltage boosting over conventional ones with reduced number of de sources. To generate a higher number of voltage levels, cascaded MLIs are taken into consideration aiming for reduced number of devices but it ends up having high blocking voltage and does not ensure the voltage boosting feature.
Hybrid MLIs having reduced semiconductor devices ensures their ability to have an increased number of levels either by cascading multiple units into each other or by providing a backend H-Bridge, but they suffer from the problems of high blocking voltage with an increased number of semiconductor elements. Cascading subunits of the SCMLI to obtain a desired output voltage with an increased number of capacitors attaining parallel connection attains high boosting ratio but suffers high blocking voltage, results in increased switching losses, conduction losses. However, the increased number of de sources with asymmetric configuration is capable to generate a desired output voltage level, but at the price of no boosting ability. A quasi Z-multilevel inverter with multiple switched capacitors are connected in series/parallel to generate high number of voltage level. Even though, the topology uses single dc source, the choosing of resonance circuit (both capacitance and inductance) value is difficult. A boost type inverter with increased number of switches and capacitors to generate a desired output voltage, which results in high cost of implementation as compared to others, is presented in. Several SC cells are being cascaded containing the same number of units in each cell having higher gain ratio with increased power losses, which results in lower efficiency and high heat dissipation because of high blocking voltage. A topology to generate a step up in voltage by providing isolation on both input and output side switching losses and high dv/dt has been presented. Increasing number of power switches with an aim of generating desired output voltage. Cross-switched MLI having high blocking voltage with reduced number of components with multiple structural configuration has been proposed. Employing a single dc source, topology in is very elegant for high frequency AC power source, however, at the price of increased number of semiconductor devices. An interesting way of cascading H-Bridge to acquire higher number of levels requires high cost of implementation with increased number of sources and capacitor count. Multiple dc sources connected in parallel to each other with series conversion for voltage step up results in high blocking voltage and low efficiency. Despite several attempts to reduce the complexity of the SCMLIs for HFAC PDS, the component count stands still high.
It is therefore an object of the present invention to provide a new family of hybrid SCMLI employing a single voltage source with reduced components resulting in less implementation complexity and lower cost.
According to the invention, there is provided a novel five-level (5L) SCMLI for generating higher number of voltage levels with reduced number of components. The 5L SCMLI circuit generates a peak output voltage of magnitude twice the input voltage in five distinct voltage levels. This basic 5L SCMLI circuit is extended to the generation of a nine-level (9L) voltage SCMLI circuit. This extension of the 9L-SCMLI is made on the basis of structural modification of the basic 5L SCMLI circuit and generates a peak output voltage of magnitude twice the input voltage in nine distinct voltage levels. The 9L SCMLI circuit can be further extended horizontally (HE) or vertically (VE) by replicating a cell within the basic circuit to generate a higher number of higher voltage levels in multiple distinct voltage levels, the number of voltage levels being a function of the number of cells.
The foregoing and other objects, aspects and advantages will be better understood from the following detailed description of a preferred embodiment of the invention with reference to the drawings, in which:
Referring now to the drawings, and more particularly to
For the 5L SCMLI circuit of
A 9L SCMLI inverter is shown in
The different modes of operation for the 9L SCMLI inverter shown in
The 9L-SCMLI inverter can be further extended based on the structural point of view to generate higher number of levels in all possible directions to generate desired output voltage. The possible ways of extension can be achieved in two ways: horizontal extension (HE) and vertical extension (VE), which are discussed in detail below.
Generalised switching pattern of the proposed 9L-SCMLI (HE) is listed in Table 2, which can be generated with the help of
NL=4n+1 (1)
Ncap=2(n−1) (2)
Nd=2(n−1) (3)
Nsw=Ndriver=4n (4)
Vmax=nVdc (5)
Vin:Vont=1:n (6)
where Nsw represents number of switches, kcap is the number of capacitors, Nd is the number of diodes, NL is the number of voltage levels and Vmax is the maximum output voltage, where, n is dependent upon maximum gain to be generated as it satisfies the condition n=2.
NL=4n+1 (7)
Ncap=2(n−1) (8)
Nd=2(n−1) (9)
Nsw=Ndriver=3n+2 (10)
Vmax=nVdc (11)
Vin:Vout=1:n (12)
The determination of a suitable capacitance value is another important factor for SCMLI topologies. Here, the determination of capacitance for the proposed 9L-SCMLI is discussed. For determining the value of capacitance, longest discharging cycle (LDC) of each capacitor is taken into account. To aid this,
As evident, LDC for both capacitors C1 and C2 occur in both positive and negative cycles at different time intervals from different voltage levels. Therefore, maximum discharging value for each capacitor can be concluded from the following equations:
Here, QCi for =1, 2 represents the maximum discharging amount of capacitors. In equation, k×Vdc represents maximum allowable voltage ripple of capacitors, optimum value of capacitors can be obtained from
Considering the equation of load current for a pure resistive load (RL) at third and fourth positive output voltages at steady-state conditions, the following can be derived:
Further, the fundamental switching timing instants t3 and t4 are equal to 3 T/20 and T/5 and are obtained from cutting of DC levels to sinusoidal function of reference waveform. For resistive inductive loading condition function IL(t) can be expressed as
IL(t)=Imax sin(ωt−φ) (18)
By solving (13) to (18) at given conditions, the optimum value of capacitors at pure resistive load and resistive-inductive load are shown in the following equation:
It is worth mentioning that equations (19) and (20) represent the optimum value of capacitors for the 9L-SCMLI, inverter which shows an inverse relation with k, ω and RL from equation (19). To have a better understanding for determining appropriate value of capacitance, a graph is shown in
On the other hand, optimum capacitance is varied for different angles of φ at allowable voltage ripple of 5 and 10%, where k=0.05 and k=0.1, considering a constant value for Imax=5 A, Vdc, =100 V, f=50 Hz and w=100 π at fundamental frequency. It can be concluded that as q) increases the value of capacitance decreases for the SCMLI as shown in
Power loss analysis of the 9L-SCMLI includes overall loss calculation, switching losses PSw, conduction losses PCon and ripple losses PRip for both capacitors at fundamental frequency as maximum loss conditions are considered during calculations.
In general, switching losses occur during ON and OFF transition state of switches. To reduce the complexity, a linear approximation between voltage and current of switches is being considered for switching period. As an outcome, following equations are considered for switching losses:
where Ii and I′i are currents through ith switch, Non and Noff is number of turn on and off a switch during fundamental cycle k. As a result to calculate total switching loss per one cycle can be written as follows:
In order to calculate total conduction losses at steady state, a pure resistive load (RL) is considered. Based on the overall circuit analysis shown in
Hereafter, RonD, RESR, Ronu represent internal resistance of power diode, equivalent series resistance of each capacitor and internal resistance of each switch. While VRS, VC and VF showcases reverse biased voltage of power diode, stored voltage of capacitor and forward biased voltage of power diode. By applying Kirchhoffs voltage law and Kirchhoffs current law for connecting nodes, the following equations are summarised. Equation (24) represents the charging current of involved capacitors for states ±Vdc/2 during operating mode (IL, I). Similarly, in equation (25) for Vdc, as it also involves charging of capacitors at second operating mode (IL, II). Equations (27) and (28) show third and fourth operating modes with respect to
2(RonD+RESR)Icharging+(3Ronu+RonDRL)IL,I+RonD(Icharging+IL,I)=Vdc−VRS−2(Vc+VF) (24)
2(RonD+RESR)Icharging+(3Ronu+RonDRL)IL,II+(IL,II+Icharging)RonD=Vdc+VF−2Vc−VRS) (25)
(4Ronu+RonD+RL+RESI)IL,III=Vdc−VF+Vc (26)
(4Ronu+RL+2ESR)IL,IV=Vdc+2Vc (27)
As an outcome, to calculate the average value during full cycle of output voltage waveform for first, second, third and fourth voltage levels, corresponding time should be taken into consideration
Pcon,I=2(Icharging)2(RonD±RESR)+(IL,1)2(3Ronu+RonD)+RonD(IL,I+Icharging)2 (28)
Pcon,II=2(RonD+2RESR)(Icharging)2+3Ronu(IL,II)2+RonD(IL,II+Icharging)2 (29)
Pcon,III=(4Ronu+RonD+RESR)(IL,III)2 (30)
Pcon,IV=(4Ronu+2RESR)(IL,IV)2 (31)
From
Simulation results for power losses are compared in this section under dynamic load, where, conduction and switching losses of the 9L-SCMLI inverter are calculated for each switch.
Only switch S8 experiences maximum loss as compared to other switches. While switches present in H-bridge, that is S4, S5, S6 and S7 share almost equal losses and switch S3 having the least. Overall, power loss for proposed topology is quite low.
Ripple losses usually occur when capacitors are connected in parallel for charging operation due to the difference between input voltage and voltage of capacitors. Therefore, voltage ripple of capacitors is shown in the following equation:
where [t−t] represents time interval of discharging modes in capacitors. Total value of ripples losses for a fundamental cycle can be seen from
Since PRip is inversely proportional to the capacitance Ci, larger value of capacitance leads to increase in overall efficiency. Equations (39) and (40) represent total losses using which the overall efficiency of the proposed 9L-SCMLI can be deduced as below, where Pout is output power of the SCMLI inverter.
The simulation and experimental results validate the performance of the SCMLI according to the invention. Firstly, the SCMLIs were simulated in MATLAB/SIMUINK for values Vin=100 V with each capacitor of 470 μF having RESR=0.1Ω under dynamic load condition for fundamental frequency (f=50 Hz) and f=400 Hz-1 kHz. In order to verify the performance of the SCMLI experimentally, a laboratory prototype was fabricated using Semikron insulated gate bipolar transistors (IGBT SKM75GB063D switches) having Ronu=14 mΩ and power diode 25 HMR 120 with RonD=3 mΩ and each capacitor of 470 μF were used. The dSPACE 1104 is used for generating the gate pulses at fundamental frequency of 50 Hz, while SKYPER-32-PRO-R as gate driver were used during implementation of prototype.
Both simulation waveforms of the 9LSCMLI at f=50 Hz and 1 kHz are shown in
Results of a31L-SCMLI (HE) are presented. As shown in
While the invention has been described in terms of a preferred embodiments, those skilled in the art will recognize that the invention can be practiced with modification within the spirit and scope of the appended claims.
Number | Name | Date | Kind |
---|---|---|---|
5481447 | Caris | Jan 1996 | A |
8957645 | Glovinski | Feb 2015 | B2 |
10396681 | Bassi | Aug 2019 | B1 |
10715037 | Xiong | Jul 2020 | B2 |
20130301314 | Fu | Nov 2013 | A1 |
20150263644 | Fu | Sep 2015 | A1 |
20170194877 | Kadam | Jul 2017 | A1 |
20180131290 | Ng | May 2018 | A1 |
20190131886 | Bassi | May 2019 | A1 |
Number | Date | Country |
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111293912 | Jun 2020 | CN |
110138250 | Oct 2020 | CN |
Entry |
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A Switched Capacitor Multilevel Inverter with Voltage Boosting Ability, Nitin Kumar; Sushma J Patil; M.S. Aspalli, Date of Conference: Oct. 30-31, 2020, Date Added to IEEEXplore: Dec. 17, 2020 https://ieeexplore.ieee.org/document/9278107. |