BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 illustrates conventional symbols and nomenclature for PMOS and NMOS transistors.
FIG. 2 shows simplified equations governing the relationships between the applied voltages and the supplied currents for PMOS and NMOS transistors.
FIG. 3 describes exemplary sizes of NMOS and PMOS transistors.
FIG. 4 is an exemplary graph showing the relationship between laser current and laser optical power output for a laser diode.
FIG. 5 is an exemplary graph showing the relationship between laser current and laser voltage for a laser diode.
FIG. 6 is a circuit diagram including a current mirror current driver, according to the prior art.
FIGS. 7-10 are graphs that are useful for illustrating the conduction characteristics of different sized MOS devices, with different values for VON. In FIG. 7 the MOS device is small (beta=0.05), and VON ranges from 0 to 5.5V. In FIG. 8 the MOS device is large, and VON ranges from 0 to 1.1V. FIG. 9 corresponds to the MOS device of FIG. 7, but with the load line of a 2.9 ohm resistor to ground. FIG. 10 corresponds to the MOS device of FIG. 8, but with the load line of a 2.9 ohm resistor to ground.
FIG. 11 is a circuit diagram including a cascode switched current driver, according to the prior art.
FIG. 12 is a circuit diagram including a current mode switched gate current driver, according to an embodiment of the present invention.
FIG. 13A is a circuit diagram including a resistive mode switched gate current driver, according to an embodiment of the present invention.
FIG. 13B is a circuit diagram including a resistive mode switched gate current driver, according to an alternative embodiment of the present invention.
FIG. 14A is a circuit diagram including a multiple set point switched gate current driver, according to an embodiment of the present invention.
FIG. 14B is a circuit diagram including a multiple set point switched gate current driver, according to an embodiment of the present invention.