Claims
- 1. A method of constructing an agricultural or horticultural house comprisingforming a synthetic resin molded material comprising a thin film made of a mixture comprising Si oxide and an oxide of at least one metal selected from the group consisting of Zr, Ti, Ta, Hf, Mo, W, Nb, Sn, In, Al, Cr and Zn, by a sputtering method on a fluorine-containing resin; wherein said thin film has a thickness of up to 100 nm; and forming said agricultural or horticultural house with said synthetic resin molded material.
- 2. The method according to claim 1, wherein the Si content is from 50 to 80 atomic % of the total metals.
- 3. The method according to claim 1, wherein said Si content is from 30 to 70 atomic %.
- 4. The method according to claim 1, wherein said at least one metal comprises Sn.
- 5. The method according to claim 1, wherein said at least one metal comprises Ti.
- 6. The method according to claim 1, wherein said at least one metal comprises Sn and Ti.
- 7. The method according to claim 1, wherein the fluorine-containing resin is selected from the group consisting of a tetrafluoroethylene resin, a chlorotrifluoroethylene resin, a vinylidene fluoride resin, a vinyl fluoride resin, and a mixture thereof.
- 8. The method according to claim 7, wherein the fluorine-containing resin is a tetrafluoroethylene resin.
- 9. The method according to claim 8, wherein the tetrafluoroethylene resin is selected from the group consisting of a PTFE, a PFA, an EPE, a FEP and an ETFE.
- 10. The method according to claim 9, wherein the tetrafluoroethylene resin is an ETFE.
- 11. The method according to claim 10, wherein the ETFE has a molar ratio of ethylene/tetrafluoroethylene of from 40/60 to 70/30.
- 12. The method according to claim 1, wherein the molar ratio of ethylene/tetrafluoroethylene is from 40/60 to 60/40.
- 13. The method according to claim 1, wherein the fluorine-containing resin has a thickness of from 10 to 300 μm.
- 14. The method according to claim 2, wherein the thickness is from 30 to 200 μm.
- 15. The method according to claim 1, wherein the Si content is from 20 to 80 atomic % of the total metals.
Priority Claims (1)
Number |
Date |
Country |
Kind |
7-15307 |
Feb 1995 |
JP |
|
Parent Case Info
This appiication is a Division of application Ser. No.08/875,496 Filed on Aug. 1, 1997, pending, which was originally filed as International Application Number PCT/JP96/00197 on Feb. 1, 1996.
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