Claims
- 1. A method for keeping time comprising the steps of:(a) reading seconds data from a memory array on a first data bus path; (b) comparing the seconds data to a first select value; (c) incrementing the seconds data using a second data bus path; (d) storing the seconds data; (e) if said seconds data equals the first select value in step (b), then (i) reading minutes data from the memory array; (ii) comparing the minutes data to a second select value; (iii) incrementing the minutes data; (iv) storing the minutes data; and (v) if said minutes data equals the second select value, then reading hours data from the memory array, incrementing the hours data, and storing the hours data using the second data bus path.
- 2. The method as recited in claim 1, wherein said memory array includes a first plurality of bitline pairs.
- 3. The method as recited in claim 1, wherein said memory array includes a first plurality of bitline pairs, and a second plurality of bitline pairs.
- 4. The method as recited in claim 3, wherein said memory array further includes an array of dual storage cells.
- 5. The method as recited in claim 4, wherein each dual storage cell of said array of dual storage cells includes a first latch coupled between a first pair of data nodes and a second latch coupled between a second pair of data nodes.
- 6. The method as recited in claim 5, wherein each dual storage cell of said array of dual storage cells further includes a first pair of pass transistors coupled to said first pair of data nodes and a second pair of pass transistors coupled to said second pair of data nodes.
- 7. The method as recited in claim 6, wherein said first pair of pass transistors of each dual storage cell of said array of dual storage cells is coupled to at least one pair of said first plurality of bitline pairs.
- 8. The method as recited in claim 7, wherein said second pair of pass transistors of each dual storage cell of said array of dual storage cells is coupled to at least one pair of said second plurality of bitline pairs.
- 9. The method as recited in claim 8, wherein each dual storage cell of said array of dual storage cells is coupled to receive a first control signal and a second control signal.
- 10. The method as recited in claim 9, wherein each dual storage cell of said array of dual storage cells further includes a transfer circuit.
- 11. The method as recited in claim 10, wherein for each dual storage cell of said array of dual storage cells, the transfer circuit is coupled to said first and second pairs of data nodes and configured to drive at least one data node of said second pair of data nodes when said first control signal is activated, which data nodes of said second pair of data nodes driven determined in accordance with logic levels of said first pair of data nodes and to drive at least one data node of said first pair of data nodes when said second control signal is activated, which data nodes of said first pair of data nodes driven determined in accordance with logic levels of said second pair of data nodes.
- 12. The method as recited in claim 11, wherein each latch is a CMOS latch.
- 13. The method as recited in claim 12 wherein for each of said dual storage cells of said array of dual storage cells, said first and second latches are CMOS static latches.
REFERENCE TO RELATED APPLICATIONS
This application is a continuation of application Ser. No. 08/571,677, filed Dec. 13, 1995; which is a continuation of application Ser. No. 08/142,755, filed Oct. 25, 1993; which is a division of application Ser. No. 07/717,215, filed Jun. 18, 1991 (U.S. Pat. No. 5,267,222); which is a continuation of application Ser. No. 07/208,889, filed Jun. 17, 1988 (U.S. Pat. 5,050,113).
Reference is made to a first related application entitled DUAL STORAGE CELL MEMORY INCLUDING DATA TRANSFER CIRCUITS, U.S. Pat. No. 4,873,665, issued Oct. 10, 1989, to Jiang et al.; to a second related application entitled DYNAMIC CMOS BUFFER FOR LOW CURRENT SWITCHING, U.S. Pat. No. 4,876,465, issued Oct. 24, 1989 to Podkowa et al.; to a third related application entitled DELAY CIRCUIT PROVIDING SEPARATE POSITIVE AND NEGATIVE GOING EDGE DELAYS, application Ser. No. 07/208,288, filed Jun. 17, 1988, now abandoned; to a fourth related application entitled ARBITRATION OF DATA WRITTEN INTO A SHARED MEMORY, application Ser. No. 07/208,890, filed Jun. 17, 1988, now abandoned; to a fifth related application entitled DYNAMIC PLA TIMING CIRCUIT, U.S. Pat. No. 4,959,646, issued Sep. 25, 1990, to Podkowa et al. These applications and patents disclose and claim a dual memory cell, a dynamic buffer circuit, a one shot circuit, arbitration circuitry, and timing circuitry for use with a PLA ROM respectively which are used in the preferred embodiment of the present invention.
US Referenced Citations (10)
Continuations (3)
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Number |
Date |
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08/571677 |
Dec 1995 |
US |
Child |
08/790276 |
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US |
Parent |
08/142755 |
Oct 1993 |
US |
Child |
08/571677 |
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US |
Parent |
07/208889 |
Jun 1988 |
US |
Child |
07/717215 |
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US |