System and method for starting voltage and current controlled elements

Information

  • Patent Grant
  • 6181122
  • Patent Number
    6,181,122
  • Date Filed
    Tuesday, July 27, 1999
    25 years ago
  • Date Issued
    Tuesday, January 30, 2001
    23 years ago
Abstract
A system and method for force-starting a voltage and current controlled element is disclosed. In a simplified embodiment, a power source is coupled to the controlled element via a start-up circuit. The start-up circuit supplies a current, or voltage, to the controlled element, responsive to the voltage or current level at a specified node being below a threshold level. Preferably, two diode-connected devices may be utilized, thereby providing current forcing capability when the voltage level at the specified node is below a threshold voltage level, as specified by the diode-connected devices.
Description




FIELD OF THE INVENTION




The present invention generally relates to circuits for supplying reference voltages and bias currents. More specifically, the invention is related to a new and efficient start-up circuit for starting voltage and current controlled elements.




BACKGROUND OF THE INVENTION




Present circuit fabrication lends itself to the creation of integrated circuits requiring biasing and initiation by a specific current or voltage value. To help bias and initiate these integrated circuits, self-biasing circuits, often called band-gap reference circuits (band-gaps), are implemented.




Band-gaps are used in a variety of integrated circuit devices as a means for generating a temperature and supply independent reference voltage, as well as a temperature and supply independent current. The band-gap provides the rest of the chip upon which it is situated with reference voltages and currents. Hence, if the band-gap doesn't start up on its own, the entire chip, and the system it is connected to, may fail to operate.




Therefore, a critical issue in the design of band-gaps is ensuring that the band-gap starts promptly and that any chance of the band-gap not starting is significantly reduced, if not eliminated altogether. To fulfill these requirements, start-up circuitry is implemented.




Several known techniques are presumably utilized to start band-gaps. Amongst these, conventional approaches have attempted to design a solution to force the self-biased circuit out of any low power state, which will not allow the self-biased circuit to start, by utilizing devices which are capable of functioning with low power. This, however, is very difficult and highly unreliable, as the properties of the low power devices cannot be properly modeled by simulation programs in this low power mode due to the simulation programs being generally incapable of accepting such low power values for parameter requirements.




Therefore, there is a need for a reliable and efficient method for initiating bandgaps.




SUMMARY OF THE INVENTION




Briefly described, the invention provides a system and method for providing a significant amount of current or voltage to a voltage and current controlled element when the element is operating in a low power mode, thereby ensuring that the element properly turns on.




Generally, the preferred embodiment of the invention comprises a voltage and current controlled element which, in normal mode, is powered by a power source, via a driving element. Within the voltage and current controlled element, a current loop is maintained, thereby causing a constant current value throughout the voltage and current controlled element and allowing the voltage and current controlled element to output a temperature independent voltage level of approximately 1.25 volts.




If, however, the voltage received from the power source is below a threshold voltage, set within the driving element, the driving element forces a large amount of current to the voltage and current controlled element. This forced current turns on the voltage and current controlled element and causes it to function as if the power source voltage was above the threshold voltage. Therefore, the voltage and current controlled element locks in an active operating point and emits approximately 1.25 volts. This eliminates the possibility of the voltage and current controlled element locking up in a low power mode.




In accordance with the preferred embodiment of the invention, an amplifier, located within the voltage and current controlled element, outputs the current value which is mirrored throughout the voltage and current controlled element, until the current loop is completed.




The invention has numerous advantages, a few of which are delineated hereafter as examples. Note that the embodiments of the invention described herein possess one or more, but not necessarily all, of the advantages set out hereafter.




One advantage of the invention is that it provides a simple and reliable procedure to prevent a self-biased circuit from locking in a low power mode.




Another advantage of the present invention is that it provides a start-up solution to band-gap failure in an area where assumption of the properties of devices used by the band-gap during low power mode, for purposes of simulating a solution to the band-gap's failure, would be otherwise be improper.




Another advantage of the present invention is that it can be utilized to reliably start-up any dormant node in a circuit which is locked at a significantly different voltage level as compared to an intended voltage level, with the mere addition of at least one current driving device.




Other objects, features, and advantages of the present invention will become apparent to one of reasonable skill in the art upon examination of the following drawings and detailed description. It is intended that all such additional objects, features, and advantages be included herein within the scope of the present invention, as defined by the claims.











BRIEF DESCRIPTION OF THE DRAWINGS




The present invention will be more fully understood from the detailed description given below and from the accompanying drawings of the preferred embodiments of the invention, which however, should not be taken to limit the invention to the specific embodiment, but are for explanation and for better understanding. Furthermore, the drawings are not necessarily to scale, emphasis instead being placed upon clearly illustrating the principles of the invention. Finally, like reference numerals in the figures designate corresponding parts throughout the several drawings.





FIG. 1

depicts one embodiment of the invention, wherein a band-gap is connected to a power source via a sensing element, which is responsive to the properties of the band-gap.





FIG. 2

depicts a band-gap circuit in accordance with the preferred embodiment of the invention having the start-up circuit of the present invention included therein.











DESCRIPTION OF THE PREFERRED EMBODIMENT




Turning to the drawings, wherein like reference numerals designate corresponding parts throughout the drawings,

FIG. 1

is a block diagram demonstrating one possible implementation of the present invention. A start-up circuit


100


, which is capable of sensing the properties of a controlled voltage and current element


200


, such as a band-gap, forces a response into the controlled element


200


based upon the sensed voltage level of the controlled element. For purposes of consistency, the controlled element will hereinafter be referred to as a band-gap, however, it is not intended that the controlled element


200


be limited as such.




In accordance with the preferred embodiment of the invention, two diode-connected devices, such as the shown metal-oxide semiconductor field-effect transistors (MOSFETs)


101


and


103


of

FIG. 1

, sense the voltage at a specified node of the band-gap


200


, as shall be described with reference to

FIG. 2

hereinbelow. Responsive to the value of the sensed voltage, the startup circuit


100


will either force a large current into the band-gap


200


, or force no current at all. As an example, if the voltage at the specified node fails to be within approximately 2 volts of the power source voltage (VDD), the MOSFETs


101


and


103


will turn on and force current into the band-gap


200


, thereby causing the band-gap


200


to start-up. It should be noted that one of reasonable skill in the art would understand that while the present method is described with reference to forcing a current, a voltage, or a voltage in combination with a current, may be forced by the start-up circuit


100


.





FIG. 2

represents a typical band-gap


200


reference circuit utilizing the start-up circuit


100


in accordance with the preferred embodiment of the invention. Describing the band-gap


200


when it is properly functioning, and therefore, as a result, transmitting a voltage of approximately 1.25 volts, a VDD power supply supplies power to start-up circuitry


100


, fed by a current supplied via device


105


. In accordance with the preferred embodiment, start-up circuit


100


comprises two enhanced metal-oxide semiconductor field-effect transistors (MOSFETs),


101


and


103


, connected in series, with the power supply connected to the drain of the first MOSFET


101


. It will be appreciated by one of ordinary skill in the art that while this disclosure describes utilization of enhanced MOSFETs


101


and


103


to sense and force voltage at a node A, as shall be described herein, other devices may be utilized to perform these functions, such as NPN transistors, or diodes. Similarly, the voltage could be sensed with respect to ground, and an inverted architecture could be utilized.




An amplifier


150


, preferably consisting of MOSFETs


151


,


153


,


155


,


157


and


159


is initialized by the power source voltage (VDD) due to a lack of impact on VDD by start-up circuit


100


, as shall be discussed hereinafter. The amplifier


150


compares the voltage at the emitter of transistor


107


, created by the transistor's diode drop, to the voltage at the emitter of transistor


109


, created by a resistor


111


in series with transistor


109


, and operates to keep these two voltage values identical. Particularly, in the preferred embodiment, specific to the amplifier


150


, MOSFETs


155


and


157


function to amplify the voltages of transistor


107


and transistor


109


so as to keep their emitter voltage levels identical. It should be noted that, by forcing the larger base emitter drop across transistor


107


to be equal to the smaller base emitter drop across transistor


109


and the drop across resistor


111


for properly scaled currents, the band-gap voltage tapped out between resistors


113


and


115


is made temperature insensitive to a first order. This is achieved by properly scaling the currents through mirrors


125


,


123


,


117


, and


121


with respect to the size of devices


109


,


107


, and


116


such that the sum of the diode drop across


116


when added to the drop across


115


becomes temperature independent in its first derivative.




The amplifier


150


then outputs a current, which is transmitted to the gates of transistors


117


,


119


,


121


,


123


, and


125


, thereby appropriately scaling the appropriate currents. This same current is also transmitted to transistor


127


via the drain of transistor


119


. The current is then mirrored from the source of transistor


127


by transistors


129


,


131


and


159


. Transistor


131


transmits this current to transistor


133


, which, in turn, mirrors the current and transmits the current to transistor


105


. Transistor


105


, in turn mirrors the current and supplies current to the entire band-gap


200


, being devices


125


,


123


,


117


,


121


,


199


, and via


119


back to


127


,


129


,


159


, and back to


131


, and


131


again closes the loop with


133


and


105


. As is known by one of ordinary skill in the art, maintenance of this current value throughout the band-gap


200


locks the band-gap


200


in an active operation point, thereby causing the band-gap to consistently emit a temperature independent reference voltage of approximately 1.25 volts independent of the process and supply voltage.




In accordance with the preferred embodiment of the invention, the band-gap voltage, which, as previously mentioned is well known in the art to be approximately 1.25 volts, is increased by resistor


113


to achieve a voltage value of approximately 3 volts. The 3 volts is then emitted to the gate of transistor


135


. Assuming a gate to source voltage of approximately 1 volt across transistor


135


, the 3 volts is increased to approximately 4 volts. This voltage is then emitted to the sources of transistors


117


,


119


,


151


,


153


,


123


and


125


, thereby supplying amplifier


150


with a 4V supply voltage. The voltage is controlled by transistor


135


, while the current is supplied by transistor


105


.




Contrary to the band-gap functioning properly, if the amplifier


150


is not initialized, the currents within the band-gap


200


will remain at a very low value, if not at 0 amps itself, and the band-gap


200


will not function properly. To address and prevent this problem, start-up circuit


100


is utilized. In accordance with the preferred embodiment of the invention, transistors


101


and


103


of the start-up circuit


100


contain a high enough threshold voltage to ensure that they are not initialized when the voltage at a chosen node A is over a certain voltage level. Alternatively, transistors


101


and


103


may be connected to any node within the band-gap


200


having a known voltage, which is high enough to prevent these transistors from being utilized when the voltage at node A is above a threshold voltage. It will be appreciated by one of ordinary skill in the art that an inverted architecture could be implemented, sensing the voltage at node A relative to ground, and a current value out of the node itself.




If the voltage at node A, as fed into transistors


101


and


103


, is below the threshold voltage of transistors


101


and


103


, a large amount of current will be emitted to the amplifier


150


via the start-up circuit


100


. This amount of current is transmitted to transistors


123


,


125


,


117


,


119


and


121


. The current transmitted to transistor


119


is then mirrored into transistors


127


,


129


,


159


,


131


, and


133


, and finally to transistor


105


.




Transistor


105


, in turn, supplies the entire band-gap with the required current. Finally, transistors


101


and


103


of the start-up circuit


100


are turned off since the voltage level transmitted to transistor


101


, at node A, is now over the threshold voltage.




In concluding the detailed description of the present invention, it should be noted that it will be obvious to those skilled in the art that many variations and modifications may be made to the embodiments discussed herein without substantially departing from he principles of the present invention. All such variations and modifications are intended to be included herein within the scope of the present invention, as set forth in the following claims. Further, in the claims hereinafter, the corresponding structures, materials, acts, and equivalents of all means or step plus function elements are intended to include any structure, material, or acts for performing the functions in combination with either claimed elements as specifically claimed.



Claims
  • 1. A system for efficiently providing a reference voltage and a bias current comprising:a driving element; and a voltage and current controlled element attached to a power source via said driving element, wherein said driving element initializes said voltage and current controlled element responsive to the power source being below a threshold level, and wherein said driving element does not consume power when said power source is above said threshold level.
  • 2. The system of claim 1, wherein said voltage and current controlled element is a band-gap.
  • 3. The system of claim 1, wherein said driving element comprises a first and a second diode connected device connected in series to said voltage and current controlled element.
  • 4. The system of claim 3, wherein said first and second diodes are MOSFETs.
  • 5. The system of claim 2, wherein said band-gap is temperature independent.
  • 6. The system of claim 1, wherein said voltage and current controlled element emits a voltage of approximately 1.25 volts in response to being initialized by said driving element.
  • 7. The system of clam 1, wherein said driving element is selected from the group consisting of a current driving element and a voltage driving element.
  • 8. The system of claim 1, wherein said driving element is both a current and voltage driving element.
  • 9. A band-gap capable of reliably starting at power-up comprising:a voltage and current controlled element; and a start-up circuit, capable of initializing said voltage and current controlled element, responsive to a first measurement level at a first node within said voltage and current controlled element, being below a threshold level, wherein said start-up circuit does not consume power when said first measurement level of said first node is above said threshold level.
  • 10. The band-gap of claim 9, wherein said voltage and current controlled element is temperature insensitive.
  • 11. The band-gap of claim 9, wherein said start-up circuit comprises a first and a second diode connected device connected in series to said voltage and current controlled element.
  • 12. The band-gap of claim 9, wherein said first measurement level is a power source voltage level.
  • 13. The band-gap of claim 9, wherein said initializing is further defined by driving a current into said controlled element.
  • 14. The band-gap of claim 9, wherein said initializing is further defined by driving a voltage into said controlled element.
  • 15. The band-gap of claim 9, wherein said first measurement level is selected from the groups consisting of a current level and a voltage level.
  • 16. A method of reliably and efficiently initializing a voltage and current controlled element when the voltage and current controlled element does not initialize at power-up:detecting the voltage level of a first voltage, at a first node, wherein said first node is internal to the voltage and current controlled element; and driving a current into the voltage and current controlled element, responsive to the voltage level at said first node being below a threshold level, thereby initializing the voltage and current controlled element, wherein said method does not consume power when said voltage level of said first voltage is above said threshold level.
  • 17. The method of claim 16, wherein said first voltage is a power source voltage.
  • 18. The method of claim 16, wherein said step of driving said current into the voltage and controlled element is performed by a start-up circuit.
  • 19. The method of claim 18, wherein said start-up circuit is further defined by a first and a second diode connected device connected in series to the voltage and current controlled element.
  • 20. The method of claim 16, wherein the voltage and current controlled element is a band-gap.
  • 21. The method of claim 16, wherein said controlled element is temperature independent.
CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Patent Application Serial No. 60/098,323, filed on Aug. 28, 1998, and entitled “Forced Start Up for Multi Mode Architectures (Bang-Gaps),” which is incorporated by reference herein in its entirety.

US Referenced Citations (11)
Number Name Date Kind
4839535 Miller Jun 1989
4857823 Bitting Aug 1989
5084665 Dixon et al. Jan 1992
5087830 Cave et al. Feb 1992
5367249 Honnigford Nov 1994
5453679 Rapp Sep 1995
5545978 Pontius Aug 1996
5686823 Rapp Nov 1997
5811993 Dennard et al. Sep 1998
5818292 Slemmer Oct 1998
5990672 Giacomini Nov 1999
Provisional Applications (1)
Number Date Country
60/098323 Aug 1998 US