The present disclosure relates to a system comprising a gate driver. It also relates to a system comprising a first gate driver and a second gate driver. The present disclosure also relates to an electric vehicle comprising the system.
Control of high voltage traction inverters such as for operating a traction motor or other electrical devices is difficult due to the need to operate in a high voltage domain. Control is usually accomplished by relaying signals into a low voltage domain and then controlling pulsed width modulation (PWM) via a microcontroller (MCU) in the low voltage domain.
According to a first aspect of the present disclosure there is provided a system comprising: a first gate driver comprising:
In one or more embodiments the first power switch and the second power switch comprise part of a respective limb of an inverter. In one or more examples the inverter is configured to convert DC power to AC power for application to an electric motor.
In one or more embodiments, the second die is stacked with the first die and a galvanic isolation layer therebetween provides said galvanic isolation, and wherein the first connection element comprises a first coil and the second connection element comprises a second coil, wherein the communication channel is provided by the first and second coils being configured to provide an inductive communication channel through the galvanic isolation layer.
In one or more embodiments, the second die is arranged adjacent the first die, and wherein the first connection element and the second connection element comprise corresponding parts of an optocoupler arrangement, and thereby the communication channel comprises an optical communication channel.
In one or more embodiments, the second die is arranged adjacent the first die, and wherein the first connection element comprises a first capacitor arrangement and the second connection element comprises a second capacitor arrangement, wherein the communication channel comprises a capacitive communication channel further provided by one or more bondwires extending between the first capacitor arrangement and the second capacitor arrangement.
In one or more embodiments, the first die includes a first supply voltage terminal for receiving a first supply voltage and a first reference terminal for receiving a first reference voltage; and the second die includes a second supply voltage terminal for receiving a second supply voltage and a second reference terminal for receiving a second reference voltage, wherein one or both of the first reference voltage and the second reference voltage are different and the first supply voltage and the second supply voltage are different.
In one or more embodiments, the second die is configured to receive at least a fault signal from the second controller of the second gate driver via the communication terminal, wherein the second die is configured to communicate the occurrence of a fault indicated by receipt of the fault signal to the first controller via the communication channel.
In one or more embodiments, the first gate driver comprises a package including a third die, wherein the third die is galvanically isolated from the first die and the second die and is communicatively coupled to the first die, wherein the third die includes interface circuitry to provide an interface to a microcontroller.
In one or more embodiments, the first controller of the first die is configured to operate in a first high voltage domain comprising the voltage domain of the first power switch; and
In one or more embodiments, the first controller is configured to communicate with the second controller selectively via the communication channel and the second die or via the third die and the microcontroller.
In one or more embodiments, the second gate driver comprising a fourth die including the second controller, wherein the second controller includes a high-voltage communication terminal coupled to the communication terminal of the second die.
In one or more embodiments, the fourth die includes a fourth supply voltage terminal for receiving the second supply voltage and a second reference terminal for receiving the second reference voltage.
In one or more examples, the communication channel provides for bidirectional communication between the first controller and the second controller. In other examples, the communication channel provides for unidirectional communication between the first controller and the second controller. In such an example, the second gate driver may have a similar structure to the first gate driver in order to provide for unidirectional communication between the first controller and the second controller.
In one or more embodiments, the second gate driver includes:
In one or more embodiments, the fifth die is configured to receive at least a fault signal from the first controller of the first gate driver via the second high-voltage communication terminal and the at least one communication terminal of the fifth die, wherein the second communication circuitry of the fifth die is configured to communicate the occurrence of a fault indicated by receipt of the fault signal to the second controller via the second communication channel.
In one or more examples, the second gate driver comprises a package including a sixth die, wherein the sixth die is galvanically isolated from the fourth die and is communicatively coupled to the fourth die, wherein the sixth die includes second interface circuitry to provide an interface to the microcontroller.
In one or more examples,
In one or more embodiments, the first gate driver and the first power switch, wherein the first gate driver is coupled to a gate terminal of the first power switch; and
In one or more examples, the first die and the second die are arranged in the same package.
According to a second aspect of the present disclosure there is provided an electric vehicle comprising the system of the first aspect, the electric vehicle including an electric motor, wherein the electric motor is powered at least in part by the first power switch and the second power switch, wherein the electric motor provides motive power for the electric vehicle.
While the disclosure is amenable to various modifications and alternative forms, specifics thereof have been shown by way of example in the drawings and will be described in detail. It should be understood, however, that other embodiments, beyond the particular embodiments described, are possible as well. All modifications, equivalents, and alternative embodiments falling within the spirit and scope of the appended claims are covered as well.
The above discussion is not intended to represent every example embodiment or every implementation within the scope of the current or future Claim sets.
The figures and Detailed Description that follow also exemplify various example embodiments. Various example embodiments may be more completely understood in consideration of the following Detailed Description in connection with the accompanying Drawings.
One or more embodiments will now be described by way of example only with reference to the accompanying drawings in which:
Control of high voltage traction inverters such as for operating a traction motor or other electrical devices is difficult due to the need to operate in a high voltage domain. Control is usually accomplished by relaying signals into a low voltage domain and then by a pulsed width modulation (PWM) communication scheme to a microcontroller (MCU) in the low voltage domain. However, such control via the low voltage domain microcontroller has been found to take time, which for some requirements is not ideal.
Examples described herein relate to control of the gate driver that is accomplished locally in the high voltage domain. The embodiments show examples of how to overcome the issue that different gate drivers are referenced to different common potentials, which makes high voltage domain communication challenging.
In general terms, we present an apparatus that utilizes galvanic isolation and a communication channel therethrough for communicatively connecting different gate drivers and allowing communication between different gate drivers in the high voltage (HV) domain. In some examples, this can provide improved communication between gate drivers.
In one or more examples, when faults occur in a first gate driver (e.g. a “high side” gate driver), communication to the complementary, second gate driver (e.g. a “low side” gate driver) is not easily accomplished without transferring communication signaling to a low voltage domain. This is typically because the reference to common (ground) of the high side driver is a switching phase node, and the reference to the low side driver is a DC Bus (−) node. Therefore, there is a large difference in voltage between the two common voltage values which prevents these two gate drivers from communicating directly. Typical application circuits tradeoff control time to route the faulted signal back to the low voltage domain and then offload control to the MCU which controls the complementary driver via PWM to compensate for the fault. This indirect communication adds a lag time to the control.
It is desirable to allow for (e.g. near) real time communication in the HV domain of the complementary gate driver circuitry between gate drivers without requiring transmitting information back to the low voltage domain MCU.
Example
It will be appreciated that the galvanic isolation layer 106 electrically isolates the first die 102 from the second die 104 that is stacked with the first die and may be formed of an oxide layer, such as SiO2. In some examples the galvanic isolation layer may be formed of a different insulating material to provide the required level of electrical isolation between the first die 102 and the second die 104. The galvanic isolation layer 106 only needs to be suitable for insulating against a relatively small voltage difference as opposed to the galvanic isolation that is required between the high voltage domain and the low voltage domain. This is because both the first die 102 and the second die 104 operate in voltage domains at similar high voltage levels.
Thus, in one or more examples, the first gate driver 100 may be configured to be operated in combination with at least one other gate driver, i.e. the second gate driver. The first gate driver 100 and the second gate driver may be considered as being complementary gate drivers. The first gate driver may comprise a high side gate driver and the second gate driver may comprise a low side gate driver of an inverter arrangement, as will be known by those skilled in the art. In general, the first controller of the first die 102 is operated in a first reference potential/supply potential corresponding to the power switch it is driving. The communication circuitry of the second die 104 may be referenced to the reference potential/supply potential of the second gate driver. Therefore, the galvanic isolation layer 106 is configured to provide a functional isolation between the first die 102 and the second die 104.
The gate driver 100 comprises a plurality of terminals 112. One or more of the terminals may couple the first controller of the first die 102 to a supply voltage and a reference voltage. One or more of the terminals 112 may provide for connection of the first controller to the gate it is configured to control. One or more of the terminals 112 may provide signalling of a fault to the first controller of the first die 102. One or more bondwires 116 may couple the respective dies 102, 104 or circuitry thereon to the terminals 112. One or more of the terminals 112 may couple the communication circuitry of the second die 104 to a different supply voltage and/or a different reference voltage.
Thus, it will be appreciated that the first controller of the first die 102 is configured to operate in a first high voltage domain comprising the voltage domain of the first power switch. Furthermore, the communication circuitry of the second die 102 is configured to operate in a second high voltage domain, different to the first high voltage domain, and comprising the voltage domain of the second power switch. In some examples the interface circuitry 118 of the third die 114 is configured to operate in a low voltage domain. It will be appreciated that the voltage difference between the first high voltage domain and the second high voltage domain will be much smaller than the voltage difference between either of the first or second high voltage domains and the low voltage domain.
In the present example, the first gate driver 100 may be referred to as the high-side (HS) gate driver and the second gate driver 300 may be referred to as the low-side (LS) gate driver. The high-side driver 100 and low-side driver 300 are both in the high voltage domain but receive different reference voltages.
In some embodiments the second die 102 is configured to receive at least a fault signal from the second controller (on die 322) of the second gate driver 300 via the communication terminal 122. In some embodiments the second die 104 is configured to communicate the occurrence of a fault, indicated by receipt of the fault signal, to the first controller on the first die 102 via the inductive communication channel 200. In some examples, the communication through the communication channel is uni-directional or bi-directional.
In the present example the first gate driver 100 comprises a package 120 including a third die 114, wherein the third die 114 is galvanically isolated from the first die 102 (and also the second die 104) and is communicatively coupled to the first die 102. In some examples the third die 114 includes interface circuitry to provide an interface to a microcontroller (not shown). Typically, the microcontroller operates in a low voltage domain relative to the high voltage domains of the first die 102 and the second die 104.
The example shown in
In some embodiments, the first controller of the first die 102 is configured to communicate with the second controller selectively via the inductive communication channel 200 and the communication circuitry of the second die 104 or via the low voltage third die 114 and the microcontroller (or via a second high-voltage communication terminal 410 described later). Thus, if the speed of communication is important, such as upon occurrence of a fault, the first controller of the first die 102 may be configured to communicate with the second controller via the communication circuitry of the second die 104. Other communications may be routed through the interface circuitry of the third die 114 and onward to the microcontroller. This may allow a faster response time to detected faults. It will be appreciated that other signal types other than or in addition to fault signals may be routed via the communication channel 200. The selective communication via the communication channel 200 may be predetermined and based on the type of communication to be communicated.
It will be appreciated that the galvanic isolation required between the high voltage domain and the low voltage domain will be larger than the isolation provided by the galvanic isolation layer 106. This is because the voltage difference between the first die 102 and the second die 104 is much lower than the voltage difference between the low voltage domain and the high voltage domain.
The inductive communication channel 200 may enable control of the complementary gate driver's high voltage circuitry without intervention from the low voltage domain microcontroller and can therefore improve the efficiency and speed of the control of the complementary gate drivers. It will be appreciated that maintaining control of the gate drivers 100, 300 in the high voltage domain can allow for improved synchronisation of the gate drivers and can allow the gate drivers to react to detected faults and/or errors much more quickly compared to the use of the low voltage domain microcontroller.
The example system of
In the example of
In general, the second gate driver 300 is substantially similar in structure to the first gate driver 100.
In the examples of
The fifth die 402 comprises at least one communication terminal 408 provided by one of the terminals of the second gate driver. The first gate driver and first die 102 also includes a second high-voltage communication terminal 410, wherein the at least one communication terminal 408 of the fifth die 402 is coupled to the second high-voltage communication terminal 410 of the first die 102 to provide for communication from the second controller of the second gate driver 300 to the first controller of the first gate driver 100 via the second inductive communication channel. Thus, the inductive communication channel provides (e.g. unidirectional) communication from the first controller of the first die to the second controller of the fourth die. The second inductive communication channel provides (e.g. unidirectional) communication from the second controller of the fourth die to the first controller of the first die.
In the embodiment shown in
In other examples, the direction of communication provided by the communication channel and the second communication channel may be reversed. In other examples, the communication channel of the first gate driver may provide for bidirectional communication between the first and second gate drivers and therefore the fifth die and the second communication channel may not be provided.
In some embodiments, the second gate driver 300 comprises a package 420 including a sixth die 412. In the example of
As will be understood, the second controller of the fourth die 322 is configured to operate in the second high voltage domain which comprises the voltage domain of the second power switch (not shown) and the voltage domain of the second die 104. Furthermore, the second communication circuitry of the fifth die 402 is configured to operate in the first high voltage domain which comprises the voltage domain of the first power switch (not shown). The second interface circuitry 414 of the sixth die 412 is configured to operate in the low voltage domain.
Example
In the second embodiment, the second die 104 is arranged adjacent the first die 102 rather than being stacked thereon. The first die 102 and the second die 104 are shown arranged in the same integrated circuit package 120, such as side by side. The galvanic isolation 706 is provided by the separation of the first die 102 and the second die 104 in the package 120. Package material or other insulating material may extend between the dies 102, 104.
In the second embodiment, the communication channel 200 comprises a capacitive based communication channel.
In the present example, the first connection element 708 comprises a first capacitor arrangement and the second connection element 710 comprises a second capacitor arrangement. Thus, the communication channel comprises a capacitive communication channel provided by one or more bondwires that couple the first capacitor arrangement 708 and the second capacitor arrangement 710 and the capacitor arrangements 708, 710 themselves.
In particular, the first capacitor arrangement 708 and the second capacitor arrangement 710 each comprises an isolation barrier 701, 702 formed on the first die 104 and the second die 106 as well as at least one pair 703, 704 and 705, 706 of terminals or plates that provide a capacitive coupling via the isolation barrier 701, 702. In the present example, each of the first die and the second die include two pairs of terminals or plates and two bond wires provide the connection between the respective pairs. The present example provides for bidirectional communication wherein one set of pairs and one bondwire provides for communication in one direction and the other set of pairs and other bondwire provides for communication in the other direction. However, although in other examples, only one bond wire may be provided for unidirectional or bidirectional communication.
Thus, the terminal 706 or “plate” is coupled to the first controller of the first die. Signals applied to the terminal 706 are capacitively coupled to the terminal or “plate” 705. The signals are this conveyed by the bondwire(s) 700 to the terminal or “plate” 703, which is capacitively coupled to terminal or “plate” 704. The communication circuitry embodied in the second die 104 may be coupled to the terminal 704. A similar arrangement may be provided by the other terminal pairs.
It will also be appreciated that the galvanically isolating and capacitive based communication channel may be embodied in other ways, as will be understood by those skilled in the art. For example, only one of the first connection element 708 and the second connection element 710 may comprise a capacitor arrangement, while the other may comprise a connection for receiving the bondwire 700.
The other features and operation of the gate driver 100 of
Example
In the third embodiment, the second die 104 is arranged adjacent the first die 102 rather than being stacked thereon. The first die 102 and the second die 104 are shown arranged in the same integrated circuit package 120, such as side by side. The galvanic isolation 706 is provided by the separation of the first die 102 and the second die 104 in the package 120.
In the third embodiment, the communication channel 200 comprises an optical based communication channel. Thus, the first connection element 908 and the second connection element 910 comprise corresponding parts of an optocoupler arrangement.
In the third example embodiment, the first connection element 908 may comprises a photo-transistor (more generally a light detector) and the second connection element 910 may comprise a light emitting diode (more generally a light emitter). Thus, the communication channel comprises an optical communication channel provided by transmission of light between the first and second connection elements 908, 910. It will be appreciated that bidirectional communication may be provided by the first connection element 908 comprising a light emitter and a light detector and the second connection element 910 comprising a light emitter and a light detector.
The other features and operation of the gate driver 100 of
It will be appreciated that any components said to be coupled may be coupled or connected either directly or indirectly. In the case of indirect coupling, additional components may be located between the two components that are said to be coupled.
In this specification, example embodiments have been presented in terms of a selected set of details. However, a person of ordinary skill in the art would understand that many other example embodiments may be practiced which include a different selected set of these details. It is intended that the following claims cover all possible example embodiments.
Number | Date | Country | Kind |
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23173245.4 | May 2023 | EP | regional |