The invention will become more fully understood from the detailed description given herein below illustration only, and thus is not limitative of the present invention, and wherein:
The present invention will be apparent from the following detailed description, which proceeds with reference to the accompanying drawings, wherein the same references relate to the same elements.
Referring to
In this embodiment, the driving circuit 2 can be a data-line driving circuit. The shift register 21 and the voltage booster 22 can operate at 5V. The highest voltage of the input pulse signal SRin and the output pulse signal SRout is at 5V. The voltage booster 22 receives the output pulse signal SRout and subsequently generates a pre-charged voltage Vp during a first period T1 of the enable time of the output pulse signal SRout to charge the boost signal SB from 0V to the operating voltage of the voltage booster 22. Then, the voltage booster 22 uses a capacitor to generate a boost voltage Vboost during a second period T2 of the enable time of the output pulse signal Sout to boost the voltage of the boost signal about to 9V. The waveforms of the above-mentioned signals are shown in
Referring to
The LCD panel 30 includes a level shifter 32, a scan-line driving circuit 33, a plurality of scan lines 341-34m, the data-line driving circuit 2, a plurality of data lines 351-35n, and a pixel array 36. The scan-line driving circuit 33 is electrically connected with the pixel array 36 via the scan lines 341-34m. The data-line driving circuit 2 is electrically connected with the pixel array 36 via the data lines 351-35n. The scan-line driving circuit 33 includes a plurality of shift registers 331 and level shifters 332. The data-line driving circuit 2 includes a plurality of shift registers 21, logic control circuits 25 (see
In this embodiment, the timing controller 31 operates at 3V and outputs a gate start pulse signal SPG, a gate clock CLKG, a source start pulse signal SPS, a source clock CLKS, and a plurality of data signals DATA. The level shifters 32 operate at 5V and convert the voltages of these signals from 3V into 5V.
The shift registers 331 operate at 5V and the frequency of the gate clock CLKG. They are connected to each other in series and shift the gate start pulse signal SPG to generate scan pulses in sequence. The level shifters 332 convert the voltages of these scan pulses from 5V into 9V, and subsequently output these scan pulses to the scan lines 341-34m.
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For instance, the k-th voltage booster 22 is electrically connected with the k-th logic control circuit 25 and the k-th sample switch 23. The first node 223A of the capacitor 223 is electrically connected with the NAND gate 253 to receive the first control signal S1. The source node of the first transistor 221 is electrically connected with the second node 223B of the capacitor 223, and the drain node and gate node of the first transistor 221 are electrically connected with the first NOT gate 251 to receive the second control signal S2. The source node of the second transistor 222 is electrically connected with a ground VSS, the drain node of the second transistor 222 is electrically connected with the second node 223B of the capacitor 223, and the gate node of the second transistor 222 is electrically connected with the second NOT gate 252 to receive the third control signal S3. The output node 224 is electrically connected with the second node 223B of the capacitor 223 and the gate node of the third transistor 231.
Please refer to
During the first period T1, the second control signal S2 is at high voltage, and both the first control signal S1 and the third control signal S3 are at low voltage 0V. Therefore, the first transistor 221 is conducting and the second transistor 222 is not conducting. Consequently, the capacitor 223 is disconnected from the ground VSS. The second control signal S2 charges the capacitor 223 to generate the pre-charged voltage Vp on the output node 224. The output node 224 outputs the boost signal SBk according to the pre-charged voltage Vp. The pre-charged voltage Vp is restricted to about 3V-4V by the first transistor 221.
During the second period T2, the first control signal S1 is at high voltage 5V, and both the voltage of the second control signal S2 and the third control signal S3 are at low voltage 0V. Therefore the first transistor 221 and the second transistor 222 are not conducting. Consequently, the capacitor 223 is disconnected from the ground VSS and the second control signal S2. The voltage of the capacitor 223 is only controlled by the first control signal S1. In addition, the first control signal S1 boosts the first node 223A of the capacitor 223 to high voltage 5V, so the voltage of the second node 223B is also boosted from the pre-charged Vp to 5V. Then, the boost voltage Vboost is generated at the second node 223B. The output node 224 outputs the boost signal SBk according to the boost voltage Vboost. Because the boost voltage Vboost is about 9V, the boost signal SBk can overcome the threshold voltage of the third transistor 231.
After the second period T2, the third control signal S3 conducts the second transistor 222 such that the capacitor 223 and the ground VSS are electrically connected with each other. Therefore, the capacitor 223 discharges through the ground VSS, and the voltages of the second node 223B and the output node 224 are reduced to the low voltage of 0V. The output node 224 outputs the boost signal SBk according to the low voltage 0V.
The third transistor 231 is controlled by the boost signal SBk. The drain node of the third transistor 231 receives the data signal DATA, and the gate node of the third transistor 231 is electrically connected with the output node 224 to receives the boost signal SBk. Because the voltage of the boost signal SBk is higher than the threshold voltage of the third transistor 231 during the second period T2, the third transistor 231 is conducting to output the data signal DATA from the source node to the holder 24.
Please refer to
Referring to
In the above embodiments, the transistors in the voltage booster 22 are implemented with NMOS transistors. In addition, referring to
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The step S01 may charge a capacitor to generate the pre-charged voltage on a first node of the capacitor during a first period, then boosts the voltage of a second node of the capacitor to generate the boost voltage at the first node during the second period. Therefore, the voltage of the first node of the capacitor is at the pre-charge voltage during the first period and at the boost voltage during the second period. Consequently, the boost signal is outputted according to the pre-charged voltage and the boost voltage.
In summary, in the liquid crystal displaying device, driving circuit and method of liquid crystal displaying device according to the invention, the shift registers and the voltage boosters operate at lower voltage. Besides the voltage boosters boost the pulses outputted from the shift registers and outputs the boost signals at higher voltage. Therefore, not only the driving circuit generates the high voltage signal to control the sample switch work normally, but also the power consumption of the shift registers and the voltage boosters is reduced.
Although the invention has been described with reference to specific embodiments, this description is not meant to be construed in a limiting sense. Various modifications of the disclosed embodiments, as well as alternative embodiments, will be apparent to persons skilled in the art. It is, therefore, contemplated that the appended claims will cover all modifications that fall within the true scope of the invention.
Number | Date | Country | Kind |
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095117931 | May 2006 | TW | national |