RELATED APPLICATIONS
This application claims priority to Taiwan Application Serial Number 112142962, filed Nov. 8, 2023, which is herein incorporated by reference.
BACKGROUND
Technical Field
The present disclosure relates to a system having a reflectarray structure. More particularly, the present disclosure relates to a system having a reconfigurable reflectarray structure.
Description of Related Art
Since 2015, a Reconfigurable Intelligent Surface (RIS) technology has been widely discussed. Even in middle of 2023, the RIS technology has been incorporated into a key technology in the sixth generation (6G) mobile wireless communication networks by many enterprises, legal persons or international organizations. The RIS technology is expected to be capable of replacing part of the base station deployment or the active radio frequency device (e.g., the booster). However, it is currently known that the power consumption of the conventional RIS technology is too large, and the manufacturing cost and the subsequent maintenance cost are too high, so that it is not easy to be adopted by the public or telecom operators. Therefore, a system having a reconfigurable reflectarray structure which is capable of reducing the power consumption, the manufacturing cost and the subsequent maintenance cost is commercially desirable.
SUMMARY
According to one aspect of the present disclosure, a system having a Reconfigurable ReflectArray (RRA) structure includes a radiation layer and a control layer. The radiation layer includes at least one P-Intrinsic-N (P-I-N) diode and a plurality of reconfigurable reflective units. At least one part of the reconfigurable reflective units is electrically connected to the at least one P-I-N diode. The control layer includes at least one switch element and at least one control unit. The at least one switch element is electrically connected to the radiation layer. The at least one control unit is electrically connected to the at least one switch element. A number of the reconfigurable reflective units is different from a number of the at least one switch element.
According to another aspect of the present disclosure, a system having a Reconfigurable ReflectArray (RRA) structure includes a radiation layer and a control layer. The radiation layer includes at least one first P-Intrinsic-N (P-I-N) diode, at least one second P-I-N diode, a plurality of first reconfigurable reflective units and a plurality of second reconfigurable reflective units. At least one part of the first reconfigurable reflective units is electrically connected to the at least one first P-I-N diode. One part of the second reconfigurable reflective units is electrically connected to the at least one second P-I-N diode, and another part of the second reconfigurable reflective units is floating. The control layer includes at least one first switch element, at least one second switch element, at least one first control unit and at least one second control unit. The at least one first switch element is electrically connected to the radiation layer. The at least one second switch element is electrically connected to the radiation layer. The at least one first control unit is electrically connected to the at least one first switch element. The at least one second control unit is electrically connected to the at least one second switch element. A number of the first reconfigurable reflective units is different from a number of the at least one first switch element, and a number of the second reconfigurable reflective units is different from a number of the at least one second switch element.
According to further another aspect of the present disclosure, a system having a Reconfigurable ReflectArray (RRA) structure includes a radiation layer and a control layer. The radiation layer includes at least one first P-Intrinsic-N (P-I-N) diode, a plurality of second P-I-N diodes, a plurality of first reconfigurable reflective units and a plurality of second reconfigurable reflective units. At least one part of the first reconfigurable reflective units is electrically connected to the at least one first P-I-N diode. The second reconfigurable reflective units are electrically connected to the second P-I-N diodes, respectively. The control layer includes at least one first switch element, at least one second switch element, at least one first control unit and at least one second control unit. The at least one first switch element is electrically connected to the radiation layer. The at least one second switch element is electrically connected to the radiation layer. The at least one first control unit is electrically connected to the at least one first switch element. The at least one second control unit is electrically connected to the at least one second switch element. A number of the first reconfigurable reflective units is different from a number of the at least one first switch element, and a number of the second reconfigurable reflective units is different from a number of the at least one second switch element.
BRIEF DESCRIPTION OF THE DRAWINGS
The present disclosure can be more fully understood by reading the following detailed description of the embodiment, with reference made to the accompanying drawings as follows:
FIG. 1 shows a schematic view of a system having a Reconfigurable ReflectArray (RRA) structure according to a first embodiment of the present disclosure.
FIG. 2 shows a schematic view of a system having a RRA structure according to a second embodiment of the present disclosure.
FIG. 3 shows a schematic view of a system having a RRA structure according to a third embodiment of the present disclosure.
FIG. 4 shows a schematic view of a system having a RRA structure according to a fourth embodiment of the present disclosure.
FIG. 5 shows a schematic view of a system having a RRA structure according to a fifth embodiment of the present disclosure.
FIG. 6 shows a schematic view of a system having a RRA structure according to a sixth embodiment of the present disclosure.
FIG. 7 shows a schematic view of a system having a RRA structure according to a seventh embodiment of the present disclosure.
FIG. 8 shows a schematic view of a system having a RRA structure according to an eighth embodiment of the present disclosure.
FIG. 9 shows a schematic view of a system having a RRA structure according to a ninth embodiment of the present disclosure.
FIG. 10 shows a schematic view of a system having a RRA structure according to a tenth embodiment of the present disclosure.
FIG. 11 shows a schematic view of a system having a RRA structure according to an eleventh embodiment of the present disclosure.
FIG. 12A shows a schematic view of a radiation layer according to a twelfth embodiment of the present disclosure.
FIG. 12B shows a schematic view of the radiation layer of FIG. 12A applied to outdoors.
FIG. 13 shows a schematic view of phase distribution corresponding to an element array of a radiation layer according to a thirteenth embodiment of the present disclosure.
FIG. 14A shows a three-dimensional schematic view of an integrated element and a dumbbell element group of a radiation layer according to a fourteenth embodiment of the present disclosure.
FIG. 14B shows a schematic view of a relationship between a radar cross-section (RCS) gain and an angle of the integrated element and the dumbbell element group of FIG. 14A.
FIG. 14C shows a schematic view of a relationship between a phase and a frequency of the integrated element of FIG. 14A.
DETAILED DESCRIPTION
The embodiment will be described with the drawings. For clarity, some practical details will be described below. However, it should be noted that the present disclosure should not be limited by the practical details, that is, in some embodiment, the practical details is unnecessary. In addition, for simplifying the drawings, some conventional structures and elements will be simply illustrated, and repeated elements may be represented by the same labels.
It will be understood that when an element (or device) is referred to as be “connected to” another element, it can be directly connected to the other element, or it can be indirectly connected to the other element, that is, intervening elements may be present. In contrast, when an element is referred to as be “directly connected to” another element, there are no intervening elements present. In addition, the terms first, second, third, etc. are used herein to describe various elements or components, these elements or components should not be limited by these terms. Consequently, a first element or component discussed below could be termed a second element or component.
Reference is made to FIG. 1. FIG. 1 shows a schematic view of a system 100 having a Reconfigurable ReflectArray (RRA) structure according to a first embodiment of the present disclosure. The system 100 having the RRA structure includes a radiation layer 200 and a control layer 300. The radiation layer 200 includes four radiation modules 202, and each of the four radiation modules 202 includes a P-Intrinsic-N (P-I-N) diode 210 and a plurality of reconfigurable reflective units 220a, 220b, 220c, 220d (220a-220d). At least one part of the reconfigurable reflective units 220a-220d is electrically connected to the P-I-N diode 210. The control layer 300 includes at least one switch element 310 and at least one control unit 320. The at least one switch element 310 is electrically connected to the radiation layer 200. The at least one control unit 320 is electrically connected to the at least one switch element 310. The number of the reconfigurable reflective units 220a-220d is different from the number of the at least one switch element 310.
In detail, the reconfigurable reflective units 220a-220d share the P-I-N diode 210. The number of the reconfigurable reflective units 220a-220d is different from the number of the P-I-N diode 210. For example, in the radiation module 202, the reconfigurable reflective units 220a-220d are arranged into a 4×1 one-dimensional array. The number of the reconfigurable reflective units 220a-220d is 4, and the number of the P-I-N diode 210 is 1. The number of the at least one switch element 310 corresponding to the one radiation module 202 is 1, and the number of the at least one control unit 320 corresponding to the one radiation module 202 is 1. In other words, the number of the reconfigurable reflective units 220a-220d is greater than the number of the P-I-N diode 210. The number of the reconfigurable reflective units 220a-220d is greater than the number of the switch element 310. The number of the P-I-N diode 210, the number of the switch element 310 and the number of the control unit 320 are the same.
The reconfigurable reflective units 220a-220d include a first radiating portion 222, a second radiating portion 224 and a third radiating portion 226. The first radiating portion 222 includes the reconfigurable reflective unit 220a and is connected to the switch element 310. The second radiating portion 224 includes the reconfigurable reflective units 220b, 220c and is connected between the first radiating portion 222 and the P-I-N diode 210. The third radiating portion 226 includes the reconfigurable reflective unit 220d and is connected to the second radiating portion 224. The reconfigurable reflective units 220a-220d can be connected in sequence by a plurality of first metal connecting portion having a strip shape. The styles of the reconfigurable reflective units 220a-220d can be the same or different based on the application requirements. The reconfigurable reflective units 220b, 220c can be respectively connected to the P-I-N diode 210 by two second metal connecting portions having an L shape.
In the embodiment, all of the reconfigurable reflective units 220a-220d in the radiation layer 200 are arranged into a 4×4 two-dimensional array. The number of all of the P-I-N diodes 210 in the radiation layer 200 is 4. The number of all of the switch elements 310 in the control layer 300 is 4, and the number of all of the control units 320 in the control layer 300 is 4, but the present disclosure is not limited thereto. In addition, the control units 320 of the control layer 300 generate control signals. The switch elements 310 receive the control signals and control the reconfigurable reflective units 220a-220d according to the control signals.
Reference is made to FIGS. 1 and 2. FIG. 2 shows a schematic view of a system 100a having a RRA structure according to a second embodiment of the present disclosure. The system 100a having the RRA structure includes a radiation layer 200a and a control layer 300a. The radiation layer 200a includes two radiation modules 202a, and each of the two radiation modules 202a includes a P-I-N diode 210 and a plurality of reconfigurable reflective units 220a, 220b, 220c, 220d, 220e, 220f, 220g, 220h (220a-220h). At least one part of the reconfigurable reflective units 220a-220h is electrically connected to the P-I-N diode 210. The control layer 300a includes two switch elements 310 and two control units 320. The two switch elements 310 are electrically connected to the radiation layer 200a. The two control units 320 are electrically connected to the two switch elements 310. The number (e.g., 8) of the reconfigurable reflective units 220a-220h is different from the number (e.g., 1) of the switch element 310 (corresponding to each of the two radiation modules 202a).
The structures of the P-I-N diode 210, the reconfigurable reflective units 220a-220d, the switch element 310 and the control unit 320 in FIG. 2 are the same as the structures of the P-I-N diode 210, the reconfigurable reflective units 220a-220d, the switch element 310 and the control unit 320 in FIG. 1, and will not be described again herein. The reconfigurable reflective unit 220e is connected to the reconfigurable reflective unit 220a. The reconfigurable reflective unit 220f is connected to the reconfigurable reflective units 220b, 220e. The reconfigurable reflective unit 220g is connected to the reconfigurable reflective units 220c, 220f. The reconfigurable reflective unit 220h is connected to the reconfigurable reflective units 220d, 220g.
In each of the two radiation modules 202a, the reconfigurable reflective units 220a-220h are arranged into a 4×2 two-dimensional array. In the embodiment, all of the reconfigurable reflective units 220a-220h in the radiation layer 200a are arranged into a 4×4 two-dimensional array. The number of all of the P-I-N diodes 210 in the radiation layer 200a is 2. The number of all of the switch elements 310 in the control layer 300a is 2, and the number of all of the control units 320 in the control layer 300a is 2, but the present disclosure is not limited thereto.
Reference is made to FIGS. 1 and 3. FIG. 3 shows a schematic view of a system 100b having a RRA structure according to a third embodiment of the present disclosure. The system 100b having the RRA structure includes a radiation layer 200b and a control layer 300b. The radiation layer 200b includes two first radiation modules (i.e., the radiation modules 202) and two second radiation modules 202b1, 202b2. Each of the two first radiation modules (i.e., the radiation modules 202) includes a first P-I-N diode (i.e., the P-I-N diode 210) and a plurality of first reconfigurable reflective units (i.e., the reconfigurable reflective units 220a-220d). The structure of each of the two first radiation modules is the same as the structure of each of the radiation modules 202 in FIG. 1, and will not be described again herein. Each of the two second radiation modules 202b1, 202b2 includes two second P-I-N diodes 210b and four second reconfigurable reflective units 220i, 220j, 220k, 220l (220i-220l). One part (e.g., the second reconfigurable reflective units 220i, 220l) of the four second reconfigurable reflective units 220i-220l is electrically connected to the two second P-I-N diodes 210b, and another part (e.g., the second reconfigurable reflective units 220j, 220k) of the four second reconfigurable reflective units 220i-220l is floating. In addition, the control layer 300b includes two first switch elements (i.e., the switch elements 310), four second switch elements 310b, two first control units (i.e., the control units 320) and two second control units 320b. The two first switch elements (i.e., the switch elements 310) are electrically connected to the radiation layer 200b. The four second switch elements 310b are electrically connected to the radiation layer 200b. The two first control units (i.e., the control units 320) are electrically connected to the two first switch elements (i.e., the switch elements 310). The two second control units 320b are electrically connected to the four second switch elements 310b.
The number of the first reconfigurable reflective units (i.e., the reconfigurable reflective units 220a-220d) is different from the number of the first switch element (i.e., the switch element 310). The number of the second reconfigurable reflective units 220i-220l is different from the number of the second switch elements 310b. The number of the second reconfigurable reflective units 220i-220l is different from the number of the second P-I-N diodes 210b. For example, in the second radiation module 202b1, the second reconfigurable reflective units 220i-220l are arranged into a 4×1 one-dimensional array. The number of the second reconfigurable reflective units 220i-220l is 4, and the number of the second P-I-N diodes 210b is 2. The number of the second switch elements 310b corresponding to the second radiation module 202b1 is 2, and the number of the second control unit 320b corresponding to the second radiation module 202b1 is 1. In other words, the number of the second reconfigurable reflective units 220i-220l is greater than the number of the second P-I-N diodes 210b. The number of the second reconfigurable reflective units 220i-220l is greater than the number of the second switch elements 310b. The number of the second P-I-N diodes 210b and the number of the second switch elements 310b are the same.
The first reconfigurable reflective units (i.e., the reconfigurable reflective units 220a-220d) include a first radiating portion 222, a second radiating portion 224 and a third radiating portion 226. The first radiating portion 222 is connected to the first switch element (i.e., the switch element 310). The second radiating portion 224 is connected between the first radiating portion 222 and the first P-I-N diode (i.e., the P-I-N diode 210). The third radiating portion 226 is connected to the second radiating portion 224. Furthermore, the second reconfigurable reflective units 220i-220l include a fourth radiating portion 228 and a fifth radiating portion 230. The fourth radiating portion 228 is connected to the second switch elements 310b. Specifically, the fourth radiating portion 228 includes the second reconfigurable reflective units 220i, 220l. The second reconfigurable reflective unit 220i is connected to one of the second switch elements 310b. The second reconfigurable reflective unit 220l is connected to another of the second switch elements 310b. The fifth radiating portion 230 corresponds to the another part of the second reconfigurable reflective units 220i-220l. The fifth radiating portion 230 includes the second reconfigurable reflective units 220j, 220k, and the second reconfigurable reflective units 220j, 220k are adjacent to each other.
The two first control units (i.e., the control units 320) generate two first control signals. The two first switch elements (i.e., the switch elements 310) receive the two first control signals and control the first reconfigurable reflective units (i.e., the reconfigurable reflective units 220a-220d) according to the two first control signals. The two second control units 320b generate four second control signals. The four second switch elements 310b receive the four second control signals and control the second reconfigurable reflective units 220i, 220l of the fourth radiating portion 228 according to the four second control signals.
It is also worth mentioning that the difference between the two second radiation modules 202b1, 202b2 is that the second reconfigurable reflective units 220j, 220k of the fifth radiating portion 230 are located in different positions. The two second radiation modules 202b1, 202b2 have different reflection phases. Therefore, the present disclosure can adaptively adjust the reflection phases of the radiation layer 200b.
Reference is made to FIGS. 1 and 4. FIG. 4 shows a schematic view of a system 100c having a RRA structure according to a fourth embodiment of the present disclosure. The system 100c having the RRA structure includes a radiation layer 200c and a control layer 300c. The radiation layer 200c includes two first radiation modules (i.e., the radiation modules 202) and two second radiation modules 202c. Each of the two first radiation modules (i.e., the radiation modules 202) includes a first P-I-N diode (i.e., the P-I-N diode 210) and a plurality of first reconfigurable reflective units (i.e., the reconfigurable reflective units 220a-220d). The structure of each of the two first radiation modules is the same as the structure of each of the radiation modules 202 in FIG. 1, and will not be described again herein. Each of the two second radiation modules 202c includes four second P-I-N diodes 210c and four second reconfigurable reflective units 220m, 220n, 220p, 220q (220m-220q). The four second reconfigurable reflective units 220m-220q are electrically connected to the four second P-I-N diodes 210c, respectively. In addition, the control layer 300c includes two first switch elements (i.e., the switch elements 310), two second switch elements 310c, two first control units (i.e., the control units 320) and two second control units 320c. The two first switch elements (i.e., the switch elements 310) are electrically connected to the radiation layer 200c. The two second switch elements 310c are electrically connected to the radiation layer 200c. The two first control units (i.e., the control units 320) are electrically connected to the two first switch elements (i.e., the switch elements 310). The two second control units 320c are electrically connected to the two second switch elements 310c. The structures of the two first switch elements (i.e., the switch elements 310) and the two first control units (i.e., the control units 320) are the same as the structures of the switch elements 310 and the control units 320 in FIG. 1, and will not be described again herein.
The number of the second reconfigurable reflective units 220m-220q is different from the number of the second switch element 310c. The number of the second reconfigurable reflective units 220m-220q is the same as the number of the second P-I-N diodes 210c. For example, in the second radiation module 202c, the second reconfigurable reflective units 220m-220q are arranged into a 4×1 one-dimensional array. The number of the second reconfigurable reflective units 220m-220q is 4, and the number of the second P-I-N diodes 210c is 4. The number of the second switch element 310c corresponding to the second radiation module 202c is 1, and the number of the second control unit 320c corresponding to the second radiation module 202c is 1. In other words, the number of the second reconfigurable reflective units 220m-220q is greater than the number of the second switch element 310c. The number of the second P-I-N diodes 210c is greater than the number of the second switch element 310c. In addition, the second reconfigurable reflective units 220m-220q are connected to the second switch element 310c. The two second control units 320c generate two second control signals. The two second switch elements 310c receive the two second control signals and control the second reconfigurable reflective units 220m-220q according to the two second control signals.
Reference is made to FIGS. 3, 4 and 5. FIG. 5 shows a schematic view of a system 100d having a RRA structure according to a fifth embodiment of the present disclosure. The system 100d having the RRA structure includes a radiation layer 200d and a control layer 300d. The radiation layer 200d includes two first radiation modules (i.e., the radiation modules 202), a second radiation module 202b1 and a second radiation module 202c. The control layer 300d includes two first switch elements (i.e., the switch elements 310), two second switch elements 310b, a second switch element 310c, two first control units (i.e., the control units 320), a second control unit 320b and a second control unit 320c. The structures of the two first radiation modules (i.e., the radiation modules 202), the second radiation module 202c, the two first switch elements (i.e., the switch elements 310), the second switch element 310c, the two first control units (i.e., the control units 320) and the second control unit 320c are the same as the structures of the two first radiation modules (i.e., the radiation modules 202), the second radiation module 202c, the two first switch elements (i.e., the switch elements 310), the second switch element 310c, the two first control units (i.e., the control units 320) and the second control unit 320c in FIG. 4. The structures of the second radiation module 202b1, the two second switch elements 310b and the second control unit 320b are the same as the structures of the second radiation module 202b1, the two second switch elements 310b and the second control unit 320b in FIG. 3, and will not be described again herein.
Reference is made to FIGS. 2, 3 and 6. FIG. 6 shows a schematic view of a system 100e having a RRA structure according to a sixth embodiment of the present disclosure. The system 100e having the RRA structure includes a radiation layer 200e and a control layer 300e. The radiation layer 200e includes a first radiation module (i.e., the radiation module 202a) and two second radiation modules 202b1, 202b2. The control layer 300e includes a first switch element (i.e., the switch element 310), four second switch elements 310b, a first control unit (i.e., the control unit 320) and two second control units 320b. The structures of the first radiation module (i.e., the radiation module 202a), the first switch element (i.e., the switch element 310) and the first control unit (i.e., the control unit 320) are the same as the structures of the first radiation module (i.e., the radiation module 202a), the first switch element (i.e., the switch element 310) and the first control unit (i.e., the control unit 320) in FIG. 2. The structures of the two second radiation modules 202b1, 202b2, the four second switch elements 310b and the two second control units 320b are the same as the structures of the two second radiation modules 202b1, 202b2, the four second switch elements 310b and the two second control units 320b in FIG. 3, and will not be described again herein.
Reference is made to FIGS. 2, 4 and 7. FIG. 7 shows a schematic view of a system 100f having a RRA structure according to a seventh embodiment of the present disclosure. The system 100f having the RRA structure includes a radiation layer 200f and a control layer 300f. The radiation layer 200f includes a first radiation module (i.e., the radiation module 202a) and two second radiation modules 202c. The control layer 300f includes a first switch element (i.e., the switch element 310), two second switch elements 310c, a first control unit (i.e., the control unit 320) and two second control units 320c. The structures of the first radiation module (i.e., the radiation module 202a), the first switch element (i.e., the switch element 310) and the first control unit (i.e., the control unit 320) are the same as the structures of the first radiation module (i.e., the radiation module 202a), the first switch element (i.e., the switch element 310) and the first control unit (i.e., the control unit 320) in FIG. 2. The structures of the two second radiation modules 202c, the two second switch elements 310c and the two second control units 320c are the same as the structures of the two second radiation modules 202c, the two second switch elements 310c and the two second control units 320c in FIG. 4, and will not be described again herein.
Reference is made to FIGS. 2, 5 and 8. FIG. 8 shows a schematic view of a system 100g having a RRA structure according to an eighth embodiment of the present disclosure. The system 100g having the RRA structure includes a radiation layer 200g and a control layer 300g. The radiation layer 200g includes a first radiation module (i.e., the radiation module 202a), a second radiation module 202b1 and a second radiation module 202c. The control layer 300g includes a first switch element (i.e., the switch element 310), two second switch elements 310b, a second switch element 310c, a first control unit (i.e., the control unit 320), a second control unit 320b and a second control unit 320c. The structures of the first radiation module (i.e., the radiation module 202a), the first switch element (i.e., the switch element 310) and the first control unit (i.e., the control unit 320) are the same as the structures of the first radiation module (i.e., the radiation module 202a), the first switch element (i.e., the switch element 310) and the first control unit (i.e., the control unit 320) in FIG. 2. The structures of the second radiation modules 202b1, the second radiation module 202c, the two second switch elements 310b, the second switch element 310c, the second control unit 320b and the second control unit 320c are the same as the structures of the second radiation modules 202b1, the second radiation module 202c, the two second switch elements 310b, the second switch element 310c, the second control unit 320b and the second control unit 320c in FIG. 5, and will not be described again herein.
Reference is made to FIGS. 1 and 9. FIG. 9 shows a schematic view of a system 100h having a RRA structure according to a ninth embodiment of the present disclosure. The system 100h having the RRA structure includes a radiation layer 200h, a control layer 300h, a display layer 400 and a control device 500. The structures of the radiation layer 200h and the control layer 300h are the same as the structures of the radiation layer 200 and the control layer 300 in FIG. 1, and will not be described again herein. The display layer 400 is electrically connected to the switch elements 310 and the control units 320 of the control layer 300h, and includes four display elements 410. The four display elements 410 receive four control signals from the control units 320 and are controlled by the four control signals. In addition, the control device 500 is electrically connected to the control units 320 and provides a plurality of global control signals to the control units 320 to control all of the reconfigurable reflective units on the radiation layer 200h (i.e., the reconfigurable reflective units 220a-220d, as shown in FIG. 1).
Reference is made to FIGS. 7 and 10. FIG. 10 shows a schematic view of a system 100i having a RRA structure according to a tenth embodiment of the present disclosure. The system 100i having the RRA structure includes a radiation layer 200i, a control layer 300i, a display layer 400i and a control device 500i. The structures of the radiation layer 200i and the control layer 300i are the same as the structures of the radiation layer 200f and the control layer 300f in FIG. 7, and will not be described again herein. The display layer 400i includes a first display element (i.e., the display element 410) and two second display elements 410c. The first display element (i.e., the display element 410) is electrically connected to a first switch element (i.e., the switch element 310) and a first control unit (i.e., the control unit 320) of the control layer 300i. The first display element (i.e., the display element 410) receives a first control signal from the first control unit (i.e., the control unit 320) and is controlled by the first control signal. The two second display elements 410c are electrically connected to the second switch elements 310c and the second control units 320c of the control layer 300i. The two second display elements 410c receive second control signals from the second control units 320c and are controlled by the second control signals. In addition, the control device 500i is electrically connected to the first control unit (i.e., the control unit 320) and the second control units 320c. The control device 500i provides a plurality of global control signals to the first control unit (i.e., the control unit 320) and the second control units 320c to control all of the reconfigurable reflective units on the radiation layer 200i (i.e., the reconfigurable reflective units 220a-220h and the second reconfigurable reflective units 220m-220q, as shown in FIG. 7).
Reference is made to FIGS. 3, 4 and 11. FIG. 11 shows a schematic view of a system 100j having a RRA structure according to an eleventh embodiment of the present disclosure. The system 100j having the RRA structure includes a radiation layer 200j and a control layer 300j. The radiation layer 200j includes two first radiation modules (i.e., the second radiation modules 202b1, 202b2) and two second radiation modules 202c. The control layer 300j includes four first switch elements (i.e., the second switch elements 310b), two second switch elements 310c, two first control units (i.e., the second control units 320b) and two second control units 320c. The structures of the two first radiation modules (i.e., the second radiation modules 202b1, 202b2), the four first switch elements (i.e., the second switch elements 310b) and the two first control units (i.e., the second control units 320b) are the same as the structures of the second radiation modules 202b1, 202b2, the second switch elements 310b and the second control units 320b in FIG. 3. The structures of the two second radiation modules 202c, the two second switch elements 310c and the two second control units 320c are the same as the structures of the second radiation modules 202c, the second switch elements 310c and the second control units 320c in FIG. 4, and will not be described again herein.
Reference is made to FIGS. 1, 12A and 12B. FIG. 12A shows a schematic view of a radiation layer 200k according to a twelfth embodiment of the present disclosure. FIG. 12B shows a schematic view of the radiation layer 200k of FIG. 12A applied to outdoors. There are the radiation layer 200k, a base station 102, a plurality of User Equipment (UE) 104, a first building B1 and a second building B2 in the outdoors. The radiation layer 200k is disposed on the second building B2 and includes a first radiation assembly 201a and a second radiation assembly 201b. The first radiation assembly 201a includes four first radiation modules 202d. Each of the four first radiation modules 202d includes a first P-I-N diode (i.e., the P-I-N diode 210) and two first reconfigurable reflective units (i.e., the reconfigurable reflective units 220b, 220c). The structures of the first P-I-N diode and the two first reconfigurable reflective units are the same as the structures of the P-I-N diode 210 and the reconfigurable reflective units 220b, 220c in FIG. 1, and will not be described again herein. The second radiation assembly 201b includes two second radiation modules (i.e., the radiation modules 202). The structure of each of the two second radiation modules (i.e., the radiation modules 202) is the same as the structure of the radiation module 202 in FIG. 1, and will not be described again herein. The reflection phases of the four first radiation modules 202d and the two second radiation modules (i.e., the radiation modules 202) are different from each other. Each of the four first radiation modules 202d and the two second radiation modules (i.e., the radiation modules 202) shares one P-I-N diode 210.
In FIG. 12B, the base station 102 originally transmits the signal to the user equipment 104 along a first path P1. However, the first path P1 is blocked by the first building B1. Hence, the signal may be transmitted to the user equipment 104 along a second path P2 through the radiation layer 200k on the second building B2. The first radiation assembly 201a of the radiation layer 200k is configured to determine the left and right change, and the second radiation assembly 201b of the radiation layer 200k is configured to determine the tilt angle, thereby enabling the user equipment 104 located in the area R to effectively transmit the signal.
The structures of the radiation layers 200, 200a, 200b, 200c, 200d, 200e, 200f, 200g, 200h, 200i, 200j, 200k of the present disclosure can be regarded as the RRA structures. For example, in a conventional 4×4 RRA structure (i.e., 16 reconfigurable reflective units), the number of P-I-N diodes of a radiation layer is 16; the number of switch elements and the number of control units of a control layer are 16 and 4, respectively; and the number of display elements of a display layer is 16. The above-mentioned numbers of the P-I-N diodes, the switch elements, the control units and the display elements may affect the power consumption of the entire system. On the contrary, the structures of the first to twelfth embodiments in the present disclosure compared with the conventional structure have fewer number of the P-I-N diodes, the switch elements, the control units or the display elements, so that the power consumption of the entire system of the present disclosure can be significantly reduced.
In the above embodiments, the reconfigurable reflective units 220a-220h and the second reconfigurable reflective units 220i-220l, 220m-220q can be made of metal and have any shape suitable for the RIS technology. One of the switch element 310 and the second switch elements 310b, 310c can be a Bipolar Junction Transistor (BJT) or a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). One of the control unit 320 and the second control unit 320b can be a shift register or a Field Programmable Gate Array (FPGA). One of the display element 410 and the second display element 410c can be a Light-Emitting Diode (LED) and determine whether to emit light according to the control signal and the second control signal. One of the control devices 500, 500i can be an Arduino device, a Central Processing Unit (CPU) or other computing processor. The user equipment 104 can be a cell phone or a mobile device. One of the radiation layer, the control layer and a display layer can be a circuit board. However, the present disclosure is not limited thereto.
Reference is made to FIGS. 3 and 13. FIG. 13 shows a schematic view of phase distribution corresponding to an element array (40×40) of a radiation layer according to a thirteenth embodiment of the present disclosure. In the present disclosure, under a restrictive condition (e.g., an angle range from 1 degree to 60 degrees), phases at certain positions are constant (not to be changed). In general, there are two types of base station distances RIS, i.e., a first base station distance RIS=1 m and a second base station distance RIS=999999 m. FIG. 13 shows the phase distribution corresponding to the second base station distance RIS=999999 m. In FIG. 13, each of the two central areas (Index of element (along x-axis)=20, 21) corresponds to the constant phase when the angle range is from 1 degree to 60 degrees. In detail, the phase of one of the two central areas (Index of element (along x-axis)=20) is all 0, and the phase of the other of the two central areas (Index of element (along x-axis)=21) is all 1. Therefore, the present disclosure utilizes the units without any switching element (e.g., the fifth radiating portion 230 in FIG. 3) at positions where the phases are not changed, thereby being capable of saving power consumption and manufacturing costs.
Reference is made to FIGS. 1, 14A, 14B and 14C. FIG. 14A shows a three-dimensional schematic view of an integrated element 610 and a dumbbell element group 620 of a radiation layer according to a fourteenth embodiment of the present disclosure. FIG. 14B shows a schematic view of a relationship between a radar cross-section (RCS) gain and an angle of the integrated element 610 and the dumbbell element group 620 of FIG. 14A. FIG. 14C shows a schematic view of a relationship between a phase and a frequency of the integrated element 610 of FIG. 14A. The dumbbell element group 620 includes two dumbbell elements. When the two dumbbell elements form the element array, there is one more switching element per half-wavelength spacing (i.e., 0.5λ). The structure of the switching element may be the same as that of the P-I-N diode 210 in FIG. 1. The present disclosure utilizes the integrated element 610 to implement the concept of low power consumption. The integrated element 610 can achieve the same or similar performance (e.g., 5.04 dB of RCS gain) by using only one switching element under the same size as the dumbbell element group 620. In addition, the bandwidth of the integrated element 610 (the phase difference between ON state and OFF state is about 180 degrees, e.g., 180 degrees plus or minus 20 degrees) is about 25 GHz to 28.6 GHz (3.6 GHz is about 12.9%).
According to the aforementioned embodiments and examples, the advantages of the present disclosure are described as follows.
- 1. Compared with the conventional structure, the system having the RRA structure of the present disclosure has fewer number of the P-I-N diodes, the switch elements, the control units or the display elements, so that the power consumption, the manufacturing cost and the subsequent maintenance cost of the entire system of the present disclosure can be significantly reduced without affecting the radiation characteristics.
- 2. The system having the RRA structure of the present disclosure can not only simplify the bias circuit of the control layer, but also make the reconfigurable reflective units of the radiation layer more compact by reducing the number of the P-I-N diodes, the switch elements, the control units or the display elements.
- 3. The system having the RRA structure of the present disclosure can adaptively adjust the reflection phases via the structural change of the reconfigurable reflective units of the radiation layer.
Although the present disclosure has been described in considerable detail with reference to certain embodiments thereof, other embodiments are possible. Therefore, the spirit and scope of the appended claims should not be limited to the description of the embodiments contained herein.
It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present disclosure without departing from the scope or spirit of the disclosure. In view of the foregoing, it is intended that the present disclosure cover modifications and variations of this disclosure provided they fall within the scope of the following claims.
Patent Application
20250149798
