Systems and methods for frequency modulation adjustment

Abstract

A system and method for providing, among other things, wideband phase modulation is described. Several embodiments include a scaling network for scaling an input modulation signal in accordance with a scaling parameter and thereby generating a scaled modulation signal that is applied to a voltage-controlled oscillator of a phase-locked loop. A sensing network may also be included for detecting changes in one or more parameters characterizing the voltage-controlled oscillator. A calibration adjustment network may additionally be included for adjusting the scaling parameter in accordance with the changes in the one or more parameters.

Description

FIELD OF THE INVENTION

The present invention relates generally to phase/frequency modulators, and more particularly, to an architecture for direct phase/frequency modulation of a phase-locked loop.

BACKGROUND OF THE INVENTION

Phase modulation schemes are very effective and are therefore widely used in communication systems. A simple example of a phase modulation scheme is quaternary phase shift keying (QPSK). FIG. 1 shows a constellation diagram that illustrates how QPSK maps two-bit digital data to one of four phase offsets. FIG. 2 shows a typical QPSK (or in-phase (I)/quadrature (Q)) modulator used to generate a phase-modulated signal. This technique relies on orthogonal signal vectors to realize the phase offsets—an inherently linear technique, since it depends solely on the matching of these orthogonal signals.

The I/Q modulator provides a straightforward approach to generating phase-modulated signals that is also suitable for more complex schemes such as wideband Code-Division Multiple Access (CDMA) and Orthogonal Frequency Division Multiplexing (OFDM) systems. It is also possible to generate the phase-modulated signals using a phase-locked loop (PLL). This approach offers reduced circuitry and lower power consumption and, as a result, finds widespread use in narrowband systems. A variation of this approach, known as two-point modulation, introduces direct modulation of the VCO to support wideband phase modulation, which unfortunately requires an accurate VCO gain. This requirement is a difficult task since the VCO gain depends on multiple factors. It would therefore be advantageous to accurately set the gain of the VCO.

SUMMARY OF THE INVENTION

A very efficient system for wideband phase modulation is provided. The system includes circuitry for periodically adjusting the gain of a voltage-controlled oscillator (VCO) used in a phase-locked loop (PLL) to synthesize the radio frequency modulated signal.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing aspects and the attendant advantages of the embodiments described herein will become more readily apparent by reference to the following detailed description when taken in conjunction with the accompanying drawings wherein:

FIG. 1 shows a constellation diagram that illustrates how QPSK maps two-bit digital data to one of four offsets;

FIG. 2 shows a diagram of a typical I/Q modulator;

FIG. 3 shows a PLL that is used to synthesize a radio frequency carrier signal;

FIG. 4 shows a mathematical model of the PLL shown in FIG. 3;

FIG. 5 shows an integration filter;

FIG. 6 shows one embodiment of a fractional-N PLL using a ΔΣ modulator;

FIG. 7 illustrates one embodiment of a fractional-N PLL that supports direct frequency or phase modulation;

FIG. 8 a shows a detailed view of a voltage-controlled oscillator;

FIG. 8 b shows one embodiment of a VCO tank circuit that includes an auxiliary port to support linear phase/frequency modulation;

FIG. 9 shows the capacitance-voltage relationship for an accumulation-mode MOSFET device;

FIG. 10 shows the linear capacitance-voltage response from back to back MOSFET devices;

FIG. 11 shows the capacitance-voltage relationship for an accumulation-mode MOSFET device at different temperatures;

FIG. 12 illustrates a phase/frequency modulator with an adjustable VCO gain K_FM;

FIG. 13 shows a system for measuring the VCO gain K_FM;

FIG. 14 illustrates a phase/frequency modulator with accurate and constant VCO gain K_FM in accordance with the present invention;

FIG. 15 a shows circuitry associated with a peak detector circuit;\

FIG. 15 b shows circuitry associated with a peak detector circuit that minimizes temperature effects;

FIG. 15 c shows an output signal used by a peak detector circuit;

FIG. 16 shows a circuit for measuring the swept capacitance of the accumulation-mode MOSFET in accordance with the present invention; and

FIG. 17 a details the control logic used in the VCO gain K_FM adjustment system of FIG. 14 in accordance with the present invention; and

FIG. 17 b shows a timing diagram for the control logic of FIG. 14 in accordance with the present invention.

DETAILED DESCRIPTION

FIG. 3 depicts a phase-locked loop (PLL) 305. The PLL 305 includes a voltage-controlled oscillator (VCO) 310, a feedback counter 320, a phase/frequency detector (P/FD) 330, a charge pump (CP) 340, and an integration filter (LPF) 350. Elements of the PLL 305 of FIG. 3 are described by the mathematical model shown in FIG. 4.

The PLL 305 uses feedback to minimize the phase difference between a very accurate reference signal and its output (RF) signal. As such, it produces an output signal at a frequency given byf_VCO=Nf_REF where f_vco is the frequency of the VCO 310 output signal, N is the value of the feedback counter 320, and f_REF is the frequency of the reference signal.

The VCO 310 produces an output signal at a frequency set by the control voltage v_ctrl according tov_out(t)=A cos(ω_ot+K_vco∫v_ctrl(t)dt),where ω_o is the free-running frequency of the VCO 310 and K_vco is the gain of the VCO 310. The gain K_vco describes the relationship between the excess phase of the carrier Φ_out and the control voltage v_ctrl with

$\frac{{\Phi }_{\mathrm{out}}\left(S\right)}{v_{\mathrm{ctrl}}\left(S\right)}=\frac{K_{\mathrm{vco}}}{s},$ where K_vco is in rads/V. The VCO 310 drives the feedback counter 320, which simply divides the output phase Φ_out by N.

When the PLL 305 is locked, the phase detector 330 and charge pump 340 generate an output signal i_CP that is proportional to the phase difference Δθ between the two signals applied to the phase detector 330. The output signal i_CP can therefore be expressed as

$i_{\mathrm{CP}}\left(s\right)=K_{\mathrm{pd}}\frac{\Delta \theta \left(s\right)}{2\pi },$ where K_pd is in A/radians and Δθ is in radians.

FIG. 5 depicts an integration filter 350 comprising a resistor R₁ 510 and capacitors C₁ 520 and C₂ 530. As shown, the integration filter 350 transforms the output signal i_CP to the control voltage v_ctrl as follows

$v_{\mathrm{ctrl}}\left(s\right)=i_{\mathrm{out}}\left(s\right)\left(\frac{{\mathrm{sR}}_1{C}_1+1}{s^2{R}_1{C}_1{C}_2+s\left(C_1+C_2\right)}\right),$ where a zero (e.g., at 1/R₁C₁) has been added to stabilize the second order system and the capacitor C₂ 530 has been included to reduce any ripple on the control voltage v_ctrl. Combining the above relations yields the closed-loop response of the system to an input signal

$T_1\left(s\right)=\frac{{\mathrm{NK}}_{\mathrm{PD}}{K}_{\mathrm{VCO}}Z\left(s\right)}{\mathrm{sN}+K_{\mathrm{PD}}{K}_{\mathrm{VCO}}Z\left(s\right)}.$

The value N of the feedback counter 320 sets the output frequency of the PLL 305. Its digital structure restricts N to integer numbers. As a result, the frequency resolution (or frequency step size) of the integer-N PLL 305 is nominally set by f_REF. Fortunately, it's possible to dramatically decrease the effective frequency step by manipulating the value of N to yield a non-integer average value. This is the concept of a fractional-N PLL.

FIG. 6 depicts a fractional-N PLL 605 that uses a ΔΣ modulator 660 to develop non-integer values of N. The ΔΣ modulator 660 advantageously pushes spurious energy (created by the changing values of the feedback counter 620) to higher frequencies to be more effectively attenuated by the integration filter 650. It can be shown that the effective value of N is simply the average value described by

$N=\frac{\sum _{x=1}^{P}N\left[x\right]}{P},$ where N[x] is the sequence of values of the feedback counter 620. This expands toN[x]=N_int+n[x], where N_int is the integer part and n[x] is the fractional part of N[x]. The ΔΣ modulator 660 generates the sequence n[x], that satisfies

$\frac{\sum _{x=1}^{P}n\left[x\right]}{P}=\frac{k}{M},$

where k is the input to the ΔΣ modulator 660 with resolution M. In practice, the order of the ΔΣ modulator 660 dictates the range of n[x].

The ΔΣ modulator 660 introduces quantization noise that appears at the PLL 605 output. The pseudo-random sequence n[x] possessing a quantization error approximately equal to ±½ N or

$\Delta =\frac{1}{N}.$ It follows that the quantization noise spectral density for this error, assuming a uniform distribution, is expressed by

$e_{\mathrm{rms}}^2\left(f\right)=\frac{1}{6N^2{f}_{\mathrm{REF}}}.$ over the frequency range of dc to f_REF/2. This quantization noise is advantageously shaped by an L^th order ΔΣ modulator 660 according toDS(z)=(1−z⁻¹)^L.

In the PLL 605, the feedback counter 620 acts as a digital accumulator and reduces the effects of the ΔΣ modulator 660. That is, the output phase from the feedback counter 620 depends on its previous output phase. The transfer function for the feedback counter 620 is therefore

$P\left(z\right)=2\pi \frac{z^{-1}}{1-z^{-1}}.$ Combining these terms shows that the output noise of the feedback counter 620 is equal ton²(f)=e_rms²(f)[DS(f)]²[P(f)]²,which yields

$n^2\left(f\right)=\frac{2}{3}{\frac{{\pi }^2}{N^2{f}_{\mathrm{REF}}}\left[2\sin \left(\frac{\pi f}{f_{\mathrm{REF}}}\right)\right]}^{2\left(L-1\right)}$

This noise seen at the output of the feedback counter 620 is in turn shaped by the transfer function T₁(s) of the PLL 605 presented above.

FIG. 7 depicts a fractional-N PLL 705 configured for very efficient phase/frequency modulation. The signals applied to the input control of the ΔΣ modulator 760 modulate the frequency of the VCO 710 according tof_VCO=f_c+Δf(t)=(N_intn[x])f_REF,where Δf(t) is the frequency modulation equal to

$\Delta f\left(t\right)=\left(n\left[x\right]-\frac{k}{M}\right)f_{\mathrm{REF}}=\mathrm{FM}{f}_{\mathrm{REF}},$ and FM is the applied modulation signal. In practice, the modulation is shaped by the response of the PLL 705 described by transfer function T₁(s) described above. The response generally limits the bandwidth of the PLL 705 so as to attenuate the quantization noise of the ΔΣ modulator 760. Consequently, this phase/frequency modulation approach supports only narrowband signals.

To overcome the narrow bandwidth limitation, a second high-frequency modulation path is added to the PLL 705 and the VCO 710. The resulting two-point frequency modulation system of FIG. 7 displays a second and complimentary transfer function given by

$T_2\left(s\right)=\frac{{\mathrm{sNK}}_{\mathrm{FM}}}{\mathrm{sN}+K_{\mathrm{PD}}{K}_{\mathrm{VCO}}Z\left(s\right)}{v}_{\mathrm{FM}},$ where K_FM is the gain of the FM port of the VCO 710 at which the v_FM modulating signal is applied. Ideally, the T₁(s) and T₂(s) expressions combine to yield a constant response, which occurs whenFMf_REF=K_FMv_FM.

The challenge with two-point modulation, and more-specifically direct VCO modulation, is that it requires near-exact control of both the frequency of the VCO 710 and consequently the product K_FMv_FM because frequency errors produce phase deviations that accumulate with time. Fortunately, the feedback of the PLL 705 reduces frequency errors because the output of the VCO 710 is driven by the feedback of the PLL 705 tof_vco=Nf_REF+FMf_REF which is also equal tof_VCO=K_VCOv_ctrl+K_FMv_FM,where v_ctrl is an error signal produced by the P/F D 730 and v_FM is an FM signal applied to the VCO 710. The error signal v_ctrl compensates for any gain errors of the VCO 710 within the bandwidth of the integration filter 750. Outside the bandwidth of the PLL 705 the effect of the feedback decreases, which makes setting the gain K_FM of the VCO 710 (“VCO gain K_FM”) to its designed value a critical operation. Additionally, setting the gain K_FM to its designed value ensures that a wider bandwidth can achieve better modulation accuracy. The VCO gain K_FM depends heavily on the circuit structure of the VCO 710, which is described in more detail below.

A detailed view of the VCO 710 is shown in FIG. 8a. The VCO 710 oscillates at a frequency

$f_{\mathrm{osc}}=\frac{1}{2\pi \sqrt{\left(L_1+L_2\right)C_{\mathrm{eq}}}},$ which is set by the resonance of a VCO tank circuit shown in FIG. 8a, where C_eq is the equivalent shunt capacitance (comprised of capacitor C₁ and varactors C_2a−C_2b plus any parasitic capacitance). The equivalent capacitance C_eq may also include coarse-tuning capacitors (not shown) to subdivide the tuning range. The varactor C₂ (shown as C_2a and C_2b) allows the VCO 710, by way of the control signal v_ctrl, to be tuned to different radio frequencies.

A VCO tank circuit shown in FIG. 8b includes an auxiliary port to support linear phase/frequency modulation. The circuit uses the capacitance of accumulation-mode MOSFET devices to achieve linear behavior even though these devices display an abrupt response as illustrated in chart 900 of FIG. 9. The accumulation-mode MOSFET devices present a low capacitance C_min at applied gate-to-bulk voltages V_GB below the threshold voltage V_T, and the MOSFET devices display a high capacitance C_max at applied voltages above V_T. Capacitors C_4a and C_4b block the dc level present at the output of the VCO 710. Resistors Z₁-Z₃ provide some isolation between the gates of MOSFET devices N₃ and N₄.

The gate-to-bulk voltage V_GB applied to each MOSFET device depends on the output signal A sin ωt of the VCO 710, the FM signal v_FM, and the common-mode voltage v_cm. The symmetric structure of the VCO 710 provides that signals V_LO+ and V_LO− are differential withV_LO+=A sin ωt & V_LO−=−A sin ωt,where A is the peak signal of each sinusoidal output and ω is the oscillation frequency. It follows then thatV_C3=A sin ωt+v_FM−v_cm & V_C4=−A sin ωt+v_FM−v_cm,which describe the gate-to-bulk voltages V_GB applied to MOSFET devices N₃ and N₄. The two MOSFET devices N₃ and N₄ connect back-to-back in the VCO 710, so their individual capacitances behave oppositely.

The modulation signal v_FM affects the MOSFET devices N₃ and N₄ as follows. The devices nominally present a capacitance equal to

$C_{\mathrm{mid}}=C_{\mathrm{FM}}\left(v_{\mathrm{FM}}=0\right)=\frac{C_{\min }{C}_{\max }}{C_{\min }+C_{\max }}.$ As the FM signal v_FM moves positive, both MOSFET devices N₃ and N₄ reach their maximum capacitance values C_max, so that for a period of time of approximately

$t=\frac{1}{\omega }{\sin }^{-1}\left(-\frac{v_{\mathrm{FM}}}{A}\right),$ the VCO structure in FIG. 8b presents a capacitance equal to C_max/2. A similar response occurs as the FM signal moves negative, which results in the VCO structure in FIG. 8b presenting a capacitance equal to C_min/2. It is worth noting that the VCO structure in FIG. 8b linearizes the overall response of the accumulation-mode MOSFET devices N₃ and N₄ to yield the behavior shown in capacitance curve 1000 of FIG. 10.

The capacitance curve 1000 shifts with the amplitude of signal A of the VCO 710 because this signal dynamically biases each accumulation-mode MOSFET device N₃ and N₄ and sweeps each MOSFET device N₃ and N₄ through a range of capacitance values. As the amplitude of signal A increases, the sensitivity of the back-to-back MOSFET devices N₃ and N₄ (e.g., ΔC/Δv_FM) decreases.

In practice, the capacitance curve 1000 for each MOSFET device N₃ and N₄ shifts with temperature as shown in chart 1100 of FIG. 11. This affects C_min and C_max as well as the transition region between C_min and C_max. It follows that the effective capacitance and the sensitivity of the back-to-back MOSFET devices N₃ and N₄ (e.g., ΔC/Δv_FM) also changes.

Even if the sensitivity of the back-to-back MOSFET devices N₃ and N₄ remains constant, the VCO gain K_FM may still change, as explained in the following. The VCO 710 oscillates at the resonant frequency of the VCO tank circuit shown in FIG. 8b. This resonant frequency is given by

$f_{\mathrm{osc}}=\frac{1}{2\pi \sqrt{\left(L_1+L_2\right)\left(C_T+\Delta C\right)}}=f_c+\Delta f,$ where C_T is the total tank capacitance less the variable capacitance ΔC. The frequency step Δf due to a change in a MOSFET device capacitance ΔC is approximately equal to

$\Delta f=f_C\left[1-\frac{1}{2}\frac{\Delta C}{C_T}+\frac{3}{8}{\left(\frac{\Delta C}{C_T}\right)}^2\right]$ for small values of ΔC. The frequency step Δf simplifies to

$\Delta f=f_C\left(-\frac{1}{2}\frac{\Delta c}{C_T}\right),$ which can then be rewritten asΔf=2π²Lf_C³ΔC,showing that Δf changes as the third power of f_C. Consequently, setting the VCO gain K_FM accurately is a challenging task.

FIG. 12 depicts a phase/frequency modulator 1270 that can accurately set the VCO gain K_FM. The system of FIG. 12 scales the FM signal v_FM by α to compensate for variations in the VCO gain K_FM and thereby stabilizes the K_FMv_FM product such thatFMf_REF=αK_FMv_FM.

The value of α is calculated using a calibration system 1380 shown in FIG. 13. The gain K_FM of the VCO 1310 is represented by the expression

$K_{\mathrm{FM}}=\frac{\Delta f_{\mathrm{OUT}}}{\Delta v_{\mathrm{FM}}},$

where Δf_OUT is the difference between output frequencies f_VCO1 and f_VCO2 at two v_FM inputs. Each of the output frequencies f_VCO1 and f_VCO2 is measured by

$f_{\mathrm{VCO}}=\frac{N}{R}{f}_{\mathrm{REF}},$ where N is the number of cycles of the VCO 1310 during a fixed measurement period and R is the number of cycles of the reference signal. During operation of the calibration system 1380, a zero-phase restart signal initiates the R counter 1381 and N counter 1385 at the same time. Since the VCO 1310 operates independently of and at a higher frequency than the reference signal, the operation of the restart signal introduces an error in the frequency measurement of the output frequencies f_VCO1 and f_VCO2 equal to

$\Delta f_{\mathrm{VCO}}=\frac{\Delta N}{R}{f}_{\mathrm{REF}},$ where ΔN represents an uncertainty associated with the N counter 1385 and the VCO 1310. The error Δf_VCO is also compounded by the read operation of the N counter 1385 at the end of the measurement period, because at least a portion of the N counter 1385 is integrated with the PLL 1305 and is therefore not designed to stop instantly, nor is it designed to transfer its contents readily. Consequently, the uncertainty ΔN and the measurement error Δf_VCO increases.

The accuracy of the above technique described with respect to FIG. 13 can be improved by increasing the length of the measurement period, which is accomplished by extending the measurement periods of the R counter 1381 and the N counter 1385 beyond the normal requirements of the PLL 1305. As a result of such an extension, it is possible to reduce the measurement error Δf_VCO to less than a few tenths of a percent.

The calibration approach described above operates off-line (e.g., with a transmitter powered off), and occurs regularly in half duplex systems, but occurs infrequently in full duplex systems. Consequently, another calibration approach is needed to measure K_FM and adjust a accordingly.

FIG. 14 depicts a K_FM adjustment system 1490 that is configured to adjust a in order to keep αK_FMv_FM constant. The adjustment system 1490 tracks key parameters to predict K_FM changes, and adjusts α accordingly. The adjustment system 1490 includes both a peak detector 1491 that measures the amplitude of the output signal of the VCO 1410, and a novel swept capacitance circuit (SCC) 1493 that characterizes the capacitance curve of an accumulation-mode MOSFET capacitor. The adjustment system 1490 translates the measurements received from the peak detector 1491 and the SCC 1493 to a digital format using an A/D converter 1495, and processes the data (via a logic device 1497) to determine the appropriate α value using

${\alpha }_2={\alpha }_1\left(\frac{A_2}{A_1}\right){\left(\frac{f_1}{f_2}\right)}^3\left(\beta +\frac{V_{C1}}{V_{C2}}\right),$ where β is a scaling factor that depends on the measurement from the SCC 1493.

FIGS. 15 a-b depict circuitry associated with the peak detector 1491. The peak detector 1491 is associated with an RF detector circuit shown in FIG. 15a and a reference network shown in FIG. 15b that reduces temperature sensitivity. The output signal of the VCO 1410 (“VCO output signal”) couples to the detector input v_IN, and drives transistor N₁. Transistor N₁ rectifies the input signal according to

$i_{D1}=\frac{\mu C_{\mathrm{ox}}}{2}\frac{W}{L}{\left(v_{\mathrm{IN}}+V_B-V_T-v_{\det }\right)}^2,$ where i_D1, μ, C_OX, W, L, and V_T are all well-known parameters associated with the transistor N₁, V_B is the gate bias voltage, v_det is the output voltage developed across capacitor C₁, and v_IN has an amplitude κA, where κ is a fixed coupling factor.

The peak detector 1491 is configured to achieve equilibrium, where the average current flowing through transistor N₁ is I_B. Achieving equilibrium requires that the voltage held by capacitor C₁ tracks the positive peaks of the coupled VCO output signal which is shown in the graph provided by FIG. 15c. As a result, the amplitude of the VCO output signal is held by capacitor C₁. Transistor N₂ replicates the dc operation of the RF detector and provides a temperature compensated reference V_REF. The difference,V_OUT=v_det−V_REF,corresponds to κA and changes proportional to A.

In several embodiments, the peak detector 1491 can be eliminated if a feedback loop (not shown) exists to control the amplitude of the VCO output signal. Nevertheless, in several embodiments the VCO 1410 is designed to minimize amplitude changes of the VCO output signal.

FIG. 16 shows circuitry of the SCC 1493. As shown, the SCC 1493 forces a constant current I_B through an accumulation-mode MOSFET device N₅, thus charging the nonlinear capacitance of the MOSFET device N₅. It follows that the developed voltage V_C relates to the capacitance curve of the MOSFET device N₅ since

$V_C={\int }_T\frac{I_B}{C_{\mathrm{MOS}}\left(V_C\right)}dt+V_{\mathrm{initial}},$ where T corresponds to the period of time that the constant bias current I_B charges C_MOS, the voltage-dependent capacitance of the MOSFET device, from an initial voltage V_initial. As a result, the voltage developed across the MOSFET device sweeps from V_initial to V_C similar to the way the VCO signal develops across the MOSFET device in the VCO circuit shown in FIG. 8b. It follows that V_C represents a swept capacitance of the MOSFET device N₅. As such, with I_B and T fixed, any differences in the MOSFET capacitance curve produce a new V_C voltage.

FIG. 17 depicts logic circuitry of the K_FM adjustment system 1490. As shown, the logic device 1797 strobes the A/D converter 1795 and samples the analog results from both the peak detector 1791 and the SCC 1793. The logic device 1797 includes a computing device 1798 that applies mathematical functions to determine the adjusted value of α. The logic device 1797 also includes a timing network 1799 to control the timing of the measurements from the peak detector 1791 and the SCC 1793, which occur based on the expected rate of change for K_FM. For example, FIG. 17b illustrates a timing diagram representative of operation of the timing network 1798 in one embodiment of the invention.

The innovative system described herein addresses a critical issue associated with two-point phase/frequency modulation systems. It advantageously ensures that the gain of the direct VCO modulation path is set properly and constant.

Those skilled in the art can readily recognize that numerous variations and substitutions may be made in the invention, its use and its configuration to achieve substantially the same results as achieved by the embodiments described herein. Accordingly, there is no intention to limit the invention to the disclosed exemplary forms. Many variations, modifications and alternative constructions fall within the scope and spirit of the disclosed invention as expressed in the claims.

Claims

1. A compensation apparatus for use with a phase-locked loop, the compensation apparatus comprising: a scaling network configured to scale an input modulation signal in accordance with a scaling parameter and thereby generate a scaled modulation signal, the scaled modulation signal being applied to a voltage-controlled oscillator of the phase-locked loop;a sensing network configured to detect changes in one or more parameters characterizing the voltage-controlled oscillator; anda calibration adjustment network configured to adjust the scaling parameter in accordance with the changes in the one or more parameters, wherein the calibration adjustment network comprises: a peak detector circuit configured to measure an amplitude of an output signal of the voltage-controlled oscillator; anda swept capacitance circuit configured to release a control signal for adjusting the scaling parameter.

2. The compensation apparatus of claim 1, wherein the scaling network includes a frequency modulation signal multiplier component having an output coupled to a frequency modulation port of the voltage-controlled oscillator, wherein the frequency modulation signal multiplier component multiplies a frequency modulation signal by the scaling parameter to achieve a modified frequency modulation signal, the modified frequency modulation signal being released by the output of the frequency modulation signal multiplier component and received by the frequency modulation port of the voltage-controlled oscillator.

3. The compensation apparatus of claim 1, wherein the one or more parameters include a product of the frequency gain and a frequency modulation signal received by a frequency modulation port of the voltage-controlled oscillator.

4. A compensation apparatus for use with a phase-locked loop, the compensation apparatus comprising: a scaling network configured to scale an input modulation signal in accordance with a scaling parameter and thereby generate a scaled modulation signal, the scaled modulation signal being applied to a voltage-controlled oscillator of the phase-locked loop;a sensing network configured to detect changes in one or more parameters characterizing the voltage-controlled oscillator; anda calibration adjustment network configured to adjust the scaling parameter in accordance with the changes in the one or more parameters, wherein the calibration adjustment network comprises:a switch configured to release a constant current;a first transistor configured to receive the constant current, wherein the constant current charges the capacitance of the first transistor to a first series of capacitance levels that is related to a second series of capacitance levels associated with a second transistor belonging to the voltage-controlled oscillator; andan output port configured to release a control signal for adjusting the scaling parameter.

5. The compensation apparatus of claim 1, wherein the scaling network includes a frequency modulation signal multiplier component having an output coupled to a frequency modulation port of the voltage-controlled oscillator, wherein the frequency modulation signal multiplier component multiplies a frequency modulation signal by the scaling parameter to achieve a modified frequency modulation signal, the modified frequency modulation signal being released by the output of the frequency modulation signal multiplier component and received by the frequency modulation port of the voltage-controlled oscillator.

6. The compensation apparatus of claim 4, wherein the one or more parameters include a product of the frequency gain and a frequency modulation signal received by a frequency modulation port of the voltage-controlled oscillator.

7. A compensation apparatus for use with a phase-locked loop, the compensation apparatus comprising: a scaling network configured to scale an input modulation signal in accordance with a scaling parameter and thereby generate a scaled modulation signal, the scaled modulation signal being applied to a voltage-controlled oscillator of the phase-locked loop;a sensing network configured to detect changes in one or more parameters characterizing the voltage-controlled oscillator; anda calibration adjustment network configured to adjust the scaling parameter in accordance with the changes in the one or more parameters, wherein the calibration adjustment network comprises: a detector component responsive to an input signal, the detector component including a transistor which rectifies the input signal so as to generate a detection signal;a reference component configured to provide a temperature-compensated reference signal; andan output port for providing a temperature-compensated output signal corresponding to a difference between the detection signal and the temperature compensated reference signal.

8. The compensation apparatus of claim 7, wherein the scaling network includes a frequency modulation signal multiplier component having an output coupled to a frequency modulation port of the voltage-controlled oscillator, wherein the frequency modulation signal multiplier component multiplies a frequency modulation signal by the scaling parameter to achieve a modified frequency modulation signal, the modified frequency modulation signal being released by the output of the frequency modulation signal multiplier component and received by the frequency modulation port of the voltage-controlled oscillator.

9. The compensation apparatus of claim 7, wherein the one or more parameters include a product of the frequency gain and a frequency modulation signal received by a frequency modulation port of the voltage-controlled oscillator.

10. A method for adjusting a frequency gain of a voltage-controlled oscillator of a phase-locked loop, the method comprising: scaling an input modulation signal in accordance with a scaling parameter and thereby generating a scaled modulation signal;applying the scaled modulation signal to the voltage-controlled oscillator;detecting changes in one or more parameters characterizing the voltage-controlled oscillator;adjusting the scaling parameter in accordance with the changes in the one or more parameters; andreleasing a constant current that charges a capacitance of a first transistor to a first series of capacitance levels related to a second series of capacitance levels associated with a second transistor of the voltage-controlled oscillator.

11. The method of claim 10, further comprising: multiplying a frequency modulation signal by the scaling parameter to achieve a modified frequency modulation signal; andinputting the modified frequency modulation signal to a frequency modulation port of the voltage-controlled oscillator.

12. The method of claim 10, wherein the one or more parameters include a product of the frequency gain and a frequency modulation signal associated with the voltage-controlled oscillator.

13. A method for adjusting a frequency gain of a voltage-controlled oscillator of a phase-locked loop, the method comprising: scaling an input modulation signal in accordance with a scaling parameter and thereby generating a scaled modulation signal;applying the scaled modulation signal to the voltage-controlled oscillator;detecting changes in one or more parameters characterizing the voltage-controlled oscillator; andadjusting the scaling parameter in accordance with the changes in the one or more parameters;generating a detection signal by rectifying an input signal;providing a temperature-compensated reference signal; andproviding a temperature-compensated output signal corresponding to a difference between the detection signal and the temperature-compensated reference signal.

14. The method of claim 13, further comprising: multiplying a frequency modulation signal by the scaling parameter to achieve a modified frequency modulation signal; andinputting the modified frequency modulation signal to a frequency modulation port of the voltage-controlled oscillator.

15. The method of claim 13, wherein the one or more parameters include a product of the frequency gain and a frequency modulation signal associated with the voltage-controlled oscillator.

16. A compensation apparatus for use with a phase-locked loop, the compensation apparatus comprising: a scaling network configured to scale an input modulation signal in accordance with a scaling parameter and thereby generate a scaled modulation signal, the scaled modulation signal being applied to a voltage-controlled oscillator of the phase-locked loop;a sensing network configured to detect changes in one or more parameters characterizing the voltage-controlled oscillator; anda calibration adjustment network configured to adjust the scaling parameter in accordance with the changes in the one or more parametersa peak detector circuit; anda swept capacitance circuit.

17. A compensation apparatus for use with a phase-locked loop, the compensation apparatus comprising: a scaling network configured to scale an input modulation signal in accordance with a scaling parameter and thereby generate a scaled modulation signal, the scaled modulation signal being applied to a voltage-controlled oscillator of the phase-locked loop;a sensing network configured to detect changes in one or more parameters characterizing the voltage-controlled oscillator; anda calibration adjustment network configured to adjust the scaling parameter in accordance with the changes in the one or more parameters, wherein the calibration adjustment network comprisesa first transistor configured to receive a constant current, wherein the constant current charges the capacitance of the first transistor to a first series of capacitance levels that is related to a second series of capacitance levels associated with a second transistor belonging to the voltage-controlled oscillator.

18. A compensation apparatus for use with a phase-locked loop, the compensation apparatus comprising: a scaling network configured to scale an input modulation signal in accordance with a scaling parameter and thereby generate a scaled modulation signal, the scaled modulation signal being applied to a voltage-controlled oscillator of the phase-locked loop;a sensing network configured to detect changes in one or more parameters characterizing the voltage-controlled oscillator; anda calibration adjustment network configured to adjust the scaling parameter in accordance with the changes in the one or more parameters, wherein the calibration adjustment network comprisesa detector component responsive to an input signal, the detector component including a transistor which rectifies the input signal so as to generate a detection signal.