Number | Name | Date | Kind |
---|---|---|---|
6188615 | Perner et al. | Feb 2001 | B1 |
6191972 | Miura et al. | Feb 2001 | B1 |
6256224 | Perner et al. | Jul 2001 | B1 |
6462979 | Schlosser et al. | Oct 2002 | B2 |
6587371 | Hidaka | Jul 2003 | B1 |
20030123281 | Iwata et al. | Jul 2003 | A1 |
Entry |
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Scheuerlein, Roy; Gallagher, William; Parkin, Stuart; Lee, Alex; Ray, Sam; Robertazzi, Ray; Reohr, William, “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell” 2000 IEEE International Solid-State Circuits Conference, 8 pgs. |
Durlam, M.; Naji, P.; DeHerrera, M.; Tehrani, S.; Kerszykow ski, G.; Kyler, K.; “Nonvolatile RAM based on Magnetic Tunnel Junction Elements”, 2000 IEEE International Solid-State Circuits Conference, 7 pgs. |