Number | Name | Date | Kind |
---|---|---|---|
5324966 | Muraoka et al. | Jun 1994 | A |
5412598 | Shulman | May 1995 | A |
5619450 | Takeguchi | Apr 1997 | A |
5936267 | Iwamuro | Aug 1999 | A |
5945715 | Kuriyama | Aug 1999 | A |
6229161 | Nemati et al. | May 2001 | B1 |
Entry |
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A Novel-Thyristor-based SRAM Cell (T-RAM) for High-Speed, Low Voltage, Giga-scale Memories by Farid Nemati and James D. Plummer, Center for Integrated Systems, Stanford, University, 1999. |
A Novel High Density, Low-Voltage SRAM Cell with a Vertical NDR Device, by Farid Nemati and James D. Plummer, Center for Integrated Systems, Stanford University, 1998. |