TABLE SORTING METHOD, MEMORY STORAGE DEVICE, AND MEMORY CONTROL CIRCUIT UNIT

Abstract

A table sorting method, a memory storage device, and a memory control circuit unit are provided. The method includes: reading first data from a first physical unit by using a first read voltage level according to a first voltage management table among multiple voltage management tables; decoding the first data; in response to the first data being successfully decoded, updating count information corresponding to the first voltage management table; and in response to the count information meeting a default condition, increasing a usage priority of the first voltage management table among the voltage management tables.

Description

Claims

1. A table sorting method, used for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical units, and the table sorting method comprises: reading first data from a first physical unit among the physical units by using a first read voltage level according to a first voltage management table among a plurality of voltage management tables;decoding the first data;in response to the first data being successfully decoded, updating first count information corresponding to the first voltage management table; andin response to the first count information meeting a default condition, increasing a usage priority of the first voltage management table among the voltage management tables.

2. The table sorting method according to claim 1, wherein the first count information reflects a number of times of data read by using the first read voltage level being successfully decoded.

3. The table sorting method according to claim 1, wherein the first count information comprises a count value, and the step of in response to the first data being successfully decoded, updating the first count information corresponding to the first voltage management table comprises: updating the count value from a first value to a second value, wherein the second value is greater than the first value.

4. The table sorting method according to claim 1, wherein the first count information comprises a count value, and the table sorting method further comprises: comparing the count value with a threshold value, wherein the threshold value is greater than zero; andin response to the count value being greater than the threshold value, judging that the first count information meets the default condition.

5. The table sorting method according to claim 1, wherein the step of increasing the usage priority of the first voltage management table among the voltage management tables comprises: increasing the usage priority of the first voltage management table among the voltage management tables to be higher than a usage priority of a second voltage management table among the voltage management tables.

6. The table sorting method according to claim 1, further comprising: in response to a system event, resetting the first count information,wherein the system event comprises one of the rewritable non-volatile memory module being powered on again, a temperature of the rewritable non-volatile memory module reaching a temperature threshold value, and a deterioration evaluation value of the rewritable non-volatile memory module reaching a deterioration threshold value.

7. A memory storage device, comprising: a connection interface unit, used to couple to a host system;a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical units; anda memory control circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module,wherein the memory control circuit unit is used to: read first data from a first physical unit among the physical units by using a first read voltage level according to a first voltage management table among a plurality of voltage management tables;decode the first data;in response to the first data being successfully decoded, update first count information corresponding to the first voltage management table; andin response to the first count information meeting a default condition, increase a usage priority of the first voltage management table among the voltage management tables.

8. The memory storage device according to claim 7, wherein the first count information reflects a number of times of data read by using the first read voltage level being successfully decoded.

9. The memory storage device according to claim 7, wherein the first count information comprises a count value, and the operation of in response to the first data being successfully decoded, updating the first count information corresponding to the first voltage management table comprises: updating the count value from a first value to a second value, wherein the second value is greater than the first value.

10. The memory storage device according to claim 7, wherein the first count information comprises a count value, and the memory control circuit unit is further used to: compare the count value with a threshold value, wherein the threshold value is greater than zero; andin response to the count value being greater than the threshold value, judge that the first count information meets the default condition.

11. The memory storage device according to claim 7, wherein the operation of increasing the usage priority of the first voltage management table among the voltage management tables comprises: increasing the usage priority of the first voltage management table among the voltage management tables to be higher than a usage priority of a second voltage management table among the voltage management tables.

12. The memory storage device according to claim 7, wherein the memory control circuit unit is further used to: in response to a system event, reset the first count information,wherein the system event comprises one of the rewritable non-volatile memory module being powered on again, a temperature of the rewritable non-volatile memory module reaching a temperature threshold value, and a deterioration evaluation value of the rewritable non-volatile memory module reaching a deterioration threshold value.

13. A memory control circuit unit, comprising: a host interface, used to couple to a host system;a memory interface, used to couple to a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical units;a decoding circuit; anda memory management circuit, coupled to the host interface, the memory interface, and the decoding circuit,wherein the memory management circuit is used to read first data from a first physical unit among the physical units by using a first read voltage level according to a first voltage management table among a plurality of voltage management tables,the decoding circuit is used to decode the first data,in response to the first data being successfully decoded, the memory management circuit is further used to update first count information corresponding to the first voltage management table, andin response to the first count information meeting a default condition, the memory management circuit is further used to increase a usage priority of the first voltage management table among the voltage management tables.

14. The memory control circuit unit according to claim 13, wherein the first count information reflects a number of times of data read by using the first read voltage level being successfully decoded.

15. The memory control circuit unit according to claim 13, wherein the first count information comprises a count value, and the operation of in response to the first data being successfully decoded, updating the first count information corresponding to the first voltage management table comprises: updating the count value from a first value to a second value, wherein the second value is greater than the first value.

16. The memory control circuit unit according to claim 13, wherein the first count information comprises a count value, and the memory management circuit is further used to: compare the count value with a threshold value, wherein the threshold value is greater than zero; andin response to the count value being greater than the threshold value, judge that the first count information meets the default condition.

17. The memory control circuit unit according to claim 13, wherein the operation of increasing the usage priority of the first voltage management table among the voltage management tables comprises: increasing the usage priority of the first voltage management table among the voltage management tables to be higher than a usage priority of a second voltage management table among the voltage management tables.

18. The memory control circuit unit according to claim 13, wherein the memory management circuit is further used to: in response to a system event, reset the first count information,wherein the system event comprises one of the rewritable non-volatile memory module being powered on again, a temperature of the rewritable non-volatile memory module reaching a temperature threshold value, and a deterioration evaluation value of the rewritable non-volatile memory module reaching a deterioration threshold value.