Target profile for a physical vapor deposition chamber target

Information

  • Patent Grant
  • D940765
  • Patent Number
    D940,765
  • Date Filed
    Wednesday, December 2, 2020
    4 years ago
  • Date Issued
    Tuesday, January 11, 2022
    2 years ago
  • US Classifications
    Field of Search
    • US
    • D23 249
    • D23 259
    • D23 262
    • D23 269
    • D15 138
    • D15 139
    • D15 143
    • D15 144
    • D15 1441
    • D15 1442
    • D15 150
    • D15 199
    • D13 118
    • D13 122
    • D13 133
    • D13 162
    • D13 182
    • D13 184
    • D13 199
    • D22 113
    • D22 119
    • CPC
    • H01J37/3414
    • H01J37/3423
    • H01L21/02631
    • H01L2221/68363
    • H01L2224/75186-75189
    • H01L21/67742
    • H01L21/0226
    • H01L21/02263
    • H01L21/02266
    • H01L21/02269
    • H01L21/02271
    • F16J7/00
    • E04D13/14
    • C23C14/3407
    • C23C14/35
  • International Classifications
    • 1509
    • Term of Grant
      15Years
Abstract
Description


FIG. 1 is a top perspective view of a sputtering target for a physical vapor deposition chamber, according to one embodiment of the novel design.



FIG. 2 is a top plan view thereof.



FIG. 3 is a bottom plan view thereof.



FIG. 4 is a right side elevation view thereof.



FIG. 5 is a left side elevation view thereof.



FIG. 6 is a front elevation thereof.



FIG. 7 is a back elevation view thereof; and,



FIG. 8 is an enlarged partial right side elevation view showing portions of the design in greater detail.


The broken lines in the drawings represent unclaimed environment and form no part of the claimed design.


The long dash sort dash broken lines in FIG. 4 and FIG. 8 represent the region of enlargement taken from FIG. 4 as shown on FIG. 8 and form no part of the claimed design.


Claims
  • We claim the ornamental design for a target profile for a physical vapor deposition chamber target, as shown and described.
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