Claims
- 1. A method of forming a metallic suicide film and dielectric cap during a gate stack formation wherein said gate stack formation includes a polysilicon layer, the method comprising: forming a metallic silicide film in a non-annealed state over said polysilicon layer; and forming a dielectric cap on said metallic silicide film at a sufficiently low temperature that said metallic silicide film remains in said non-annealed state.
- 2. The method of claim 1, wherein said forming a metallic silicide film in said non-annealed state over said polysilicon layer is effected at a temperature below about 600° C.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional of application Ser. No. 09/614,113, filed Jul. 12, 2000, which is a continuation of application Ser. No. 08/682,935, filed Jul. 16, 1996, now U.S. Pat. No. 6,087,254, issued Jul. 11, 2000.
Divisions (1)
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Number |
Date |
Country |
Parent |
09614113 |
Jul 2000 |
US |
Child |
09942191 |
Aug 2001 |
US |
Continuations (1)
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Number |
Date |
Country |
Parent |
08682935 |
Jul 1996 |
US |
Child |
09614113 |
Jul 2000 |
US |