The present invention relates to a ternary Ti—Ni—Cu shape memory alloy which has both low composition dependency and low heat treatment dependency and which is useful as a device used, for example, in an actuator, and to a process for producing same.
A binary Ti—Ni alloy which is widely used as a shape memory alloy has defects because its phase transformation temperature greatly depends upon its composition and its heat treatment temperature and is lower than ambient temperature when a large output force is attempted to be obtained. Thus, a difficulty is encountered in controlling the composition. In particular, the yield of sputtered thin films in which the compositional distribution in the plane direction unavoidably becomes non-uniform is poor. It is, therefore, difficult to produce sputtered films on an industrial scale (Patent Document 1).
With a view toward solving the above problems of such a binary Ti—Ni alloy, studies have been made on a ternary Ti—Ni—Cu shape memory alloy in which a part of Ni of a 50 atomic % Ti—Ni alloy is substituted with Cu. For example, it has been revealed that in Ti—Ni—Cu alloy thin films having a Ti content of at least 50 atomic %, the temperature hysteresis is reduced by addition of Cu and the recovery stress increases due to solid solution hardening by Cu (Non-Patent Document 1). It has been also revealed that in Ti—Ni—Cu alloy thin films containing 6 atomic % of Cu and no more than 50 atomic % of Ti, the shape memory behavior of alloys having a structure in which a TiNiCu phase is formed within grains greatly varies with a Ti content and, further, the transformation occurs in a temperature range lower than ambient temperature and in two separate stages (Non-Patent Document 2).
A Ti50-(Ni, Cu)50 alloy which is a ternary Ti—Ni—Cu shape memory alloy, however, is brittle and has poor workability, though its phase transformation temperature scarcely depends upon the Cu content. Thus, the Cu content is at most 10 atomic % in the case of a cast alloy and is at most 20 atomic % in the case of an alloy formed by a liquid quenching method. Additionally, the obtained alloy has a composition near the Ti(Ni, Cu) single phase (Ti 50 atomic %) and is defective in that the output force is small. For example, there is proposed a method of producing a Ti—Ni—Cu alloy which contains more than 10 atomic % of Cu and which is difficult to be produced with the ordinary melting and hot processing method (Patent Document 2). Since the composition of the produced alloy is limited to the single phase region in the vicinity of Ti-50 atomic %, however, the alloy has a defect that the output force is small.
[Transformation and Deformation Behavior in Sputter-Deposited Ti—Ni—Cu Thin Films], T. Hashinaga, S. Miyazaid, T. Ueki and H. Hirokawa: J. Physique IV, 5(1995), C8-689
“Structure Evolution in Sputtered Thin Films of Tix(Ni, Cu)1−x” [1: Diffusive transformations], [2: Displace Transformations], L. Chang and D. S. Grumman: Philosophical Magazine A 76(1997), 163-219
As described in the foregoing, since the conventional shape memory alloy thin film are sensitive to composition variations and heat treatment conditions, it has been difficult to properly control their composition and heat treatment conditions. Further, with the customarily employed sputtering method, it has not been easy to obtain a uniform distribution of the alloy composition in the plane direction thereof and to produce such films in a satisfactory yield. It has been, therefore, difficult to produce shape memory alloy thin films on an industrial scale. Further, since various treatments for increasing the output force of a shape memory alloy tend to lower the transformation temperature and ductility of the alloy, it has been difficult to produce a shape memory alloy which has a high transformation temperature and a large output force and, yet which has useful ductility.
In this circumstance, the objective of the present invention is to provide a ternary Ti—Ni—Cu shape memory alloy which has solved the above-described problems, which has low composition dependency, which permits stable production, which has a transformation temperature higher than ambient temperature and which can generate a large output force, and to provide a process capable of producing such a ternary Ti—Ni—Cu shape memory alloy in an efficient manner.
In accomplishing the foregoing objects, there is provided in accordance with a first aspect of the present invention a ternary Ti—Ni—Cu shape memory alloy comprising from 44 to 49 atomic % of Ti, from 20 to 30 atomic % of Cu, and the balance being Ni and unavoidable elements.
In a second aspect, the present invention provides the above alloy, wherein a TiNiCu or TiCu phase of not greater than 500 nm is formed within Ti(Ni, Cu) crystal grains having a grain size of 2 μm or less.
In a third aspect, the present invention provides a process, which comprises beating an amorphous Ti—Ni—Cu alloy comprising from 44 to 49 atomic % of Ti, from 20 to 30 atomic % of Cu, and the balance being Ni and unavoidable elements to crystallize the amorphous Ti—Ni—Cu alloy.
In a fourth aspect, the present invention provides the above process, wherein said heating is at a temperature in the range of from 500 to 700° C.
In a fifth aspect, the present invention provides the above process, wherein said heating is performed for a period of time not exceeding 100 hours.
The ternary Ti—Ni—Cu shape memory alloy according to the present invention has low composition or heat treatment dependency and a transformation temperature higher than ambient temperature and is capable of being produced in a stable manner. The shape memory alloy is useful as a device used, for example, in an actuator.
The present invention also provides a process capable of producing the above ternary Ti—Ni—Cu shape memory alloy in an efficient manner.
In the studies on ternary Ti—Ni—Cu alloys of B 19 structure in which the change in crystal structure is small, it has been found that a ternary Ti—N—Cu shape memory alloy exhibiting, in a stable maimer without being influenced by the alloy composition or heat treatment conditions, transformation at a temperature higher than ambient temperature and capable of generating a large output force can be obtained by adopting, in combination, enrichment of precipitates and solid solution hardening-in addition to microsize of grains (suppressing the grain size up to about 2 μm) which alone would cause lowering of the transformation temperature. The present invention has been completed based on the technical finding.
A large output force generated by the ternary Ti—Ni—Cu shape memory alloy according to the present invention is considered to be ascribed to the synergetic effect among the solid solution hardening by Cu atom, the precipitation of a TiNiCu phase or a TiCu phase within the Ti(Ni, Cu) crystal grains, and the microsize of the Ti(Ni, Cu) crystal grains. When the heat treatment is carried out at a high temperature for an excessively long period of time, however, the size of the crystal grains increases and the formation of such precipitates within the crystal grains decreases and, therefore, a high output force could not be obtained. For this reason, the heat treatment is preferably carried out at 500 to 700° C. for 100 hours or less.
In the process for producing a ternary Ti—Ni—Cu shape memory alloy according to the present invention, an amorphous Ti—Ni—Cu alloy composed of Ti in an amount of from 44 to 49 atomic %, Cu in an amount of from 20 to 30 atomic %, and the balance being Ni and unavoidable elements is heated at a temperature from 500 to 700° C. for a period of time not exceeding 100 hours. The reasons for specifying the contents of the above elements are as follows. When the Ti content exceeds 49 atomic %, a TiNiCu phase which is one of the factors to increase the output force of the ternary Ti—Ni—Cu shape memory alloy is not formed. When the Ti content is less than 44 atomic %, on the other hand, the TiNiCu phase increases excessively to cause not only lowering of the transformation temperature but also brittleness of the alloy. Therefore, the Ti content should be within the range of from 44 to 49 atomic %. When the Cu content exceeds 30 atomic %, only a TiCu phase is formed and the alloy becomes brittle. On the other hand, when the Cu content is less than 20 atomic %, the transformation temperature is lowered so that it is no longer possible to ensure a transformation temperature higher than ambient temperature (suitably 40° C. or higher) in a stable manner throughout the entire range of 49 to 44 atomic % of the Ti content. Further, a large output force cannot be obtained because the solid solution hardening by Cu is insufficient and the grain size becomes large. Therefore, the Cu content should be within the range of from 20 to 30 atomic %. The following example will further specifically illustrate the ternary Ti—Ni—Cu shape memory alloy and its production process.
Amorphous alloy thin films of 48.3 atomic % Ti-23.3 atomic % Cu—Ni; 48.3 atomic % Ti-27.8 atomic % Cu—Ni; 44.6 atomic % Ti-23.2 atomic % Cu—Ni; and 44.9 atomic % Ti-27.3 atomic % Cu—Ni were produced using a multi-target magnetron sputtering system. Such amorphous thin films may be produced not only by sputtering but also by using any other suitable method. Each of the amorphous thin films was peeled off from a substrate and subjected to a heat treatment at 500 to 700° C. The obtained alloy films were measured for their transformation temperature by differential thermal analysis and for their shape memory characteristics by heating and cooling under a loaded state.
It has been confirmed that any of the above-described thin films of the ternary Ti—Ni—Cu shape memory alloy forms a low temperature phase (B19 phase) in the unloaded state at ambient temperature.
However, the output force tends to lower when heat treatment time is prolonged and the heat treatment temperature is increased. The heat treatment at 500 to 700° C. for 100 hours or less is found to be preferred.
Number | Date | Country | Kind |
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2005-172939 | Jun 2005 | JP | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/JP2006/310344 | 5/24/2006 | WO | 00 | 1/30/2008 |