The present disclosure relates to a testing system, and in particular it relates to transferring and testing light-emitting elements within a testing system.
Light-emitting elements are commonly used as light sources in applications involving optical communications. Such elements can generate light in response to the application of an electrical signal.
The light-emitting element may be tested before being packaged. This testing incurs additional costs and longer cycle times, while the complexity of testing chip-level elements may compromise the accuracy of the test results. Therefore, these and related issues need to be addressed through the design and optimization of the testing system.
In an embodiment, a method of transferring a light-emitting element includes transferring the light-emitting element to a predetermined position by a transferring component, and vacuuming the at least one vacuum hole to attract the light-emitting element. The predetermined position is spaced apart a distance from at least one vacuum hole, and the distance is greater than half of a width of the light-emitting element.
In another embodiment, a testing system for testing a light-emitting element having a light-emitting surface includes at least one probe for probing the light-emitting element in a probing direction perpendicular to a normal direction of the light-emitting surface in a top view.
In yet other embodiment, a method of testing a light-emitting element having a light-emitting surface includes positioning the light-emitting element on a supporting stage, probing the light-emitting element with at least one probe, and sensing a light emitted from the light-emitting surface. A probing direction of the at least one probe is substantially perpendicular to a normal direction of the light-emitting surface in a top view.
The disclosure can be more fully understood from the following detailed description when read with the accompanying figures. It is worth noting that, in accordance with standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
Illustrative embodiments will now be described with reference to the accompanying drawings. In the drawings, like reference numerals generally indicate identical, functionally similar, and/or structurally similar elements.
The following disclosure provides many different embodiments, or examples, for implementing different features of the subject matter provided. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, a first feature is formed on or disposed on a second feature in the description that follows may include embodiments in which the first feature and second feature are formed or disposed in direct contact, and may also include embodiments in which additional features may be formed or disposed between the first feature and second feature, so that the first feature and second feature may not be in direct contact.
It should be understood that additional steps may be implemented before, during, or after the illustrated methods, and some steps might be replaced or omitted in other embodiments of the illustrated methods.
Furthermore, spatially relative terms, such as “beneath,” “below,” “lower,” “on,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to other elements or features as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
In the present disclosure, the terms “about,” “approximately” and “substantially” may mean ±20%, ±10%, ±5%, ±3%, ±2%, ±1%, or ±0.5% of the stated value. The stated value of the present disclosure is an approximate value. That is, when there is no specific description of the terms “about,” “approximately” and “substantially”, the stated value includes the meaning of “about,” “approximately” or “substantially”.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It should be understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined in the embodiments of the present disclosure.
The present disclosure may repeat reference numerals and/or letters in following embodiments. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
In response to the increasing demand for higher testing quality, the testing system and method for testing semiconductor devices have become a critical concern. In particular, performing testing on the chip-level device poses more challenges than wafer-level device, due to the significant dimensional difference.
According to some embodiments of the present disclosure, the light-emitting element may be fixed at a supporting stage (such as a chuck) of the testing system, with the side surface emitting light (also known as an output facet) facing toward an optical sensor for sensing the emitted light. After that, one or more probes may be introduced to contact the top surface of the light-emitting element. The probes may function as anode contacts that supply the necessary bias voltage. The bottom surface of the light-emitting element may be electrically coupled to a cathode contact through the chuck for electrical ground, but the present disclosure is not limited thereto.
In some embodiments, the substrate 100 may also be, for example, a wafer or a chip, but the present disclosure is not limited thereto. In some embodiments, the substrate 100 may be a semiconductor substrate, a ceramic substrate, a glass substrate, or any suitable substrate, but the present disclosure is not limited thereto. Furthermore, in some embodiments, the materials of the semiconductor substrate may include an elemental semiconductor (such as silicon and/or germanium), a compound semiconductor (such as gallium nitride (GaN), silicon carbide (SiC), gallium arsenide (GaAs), gallium phosphide (GaP), indium phosphide (InP), indium arsenide (InAs), and/or indium antimonide (InSb)), an alloy semiconductor (such as silicon germanium (SiGe) alloy, gallium arsenide phosphide (GaAsP) alloy, aluminum indium arsenide (AlInAs) alloy, aluminum gallium arsenide (AlGaAs) alloy, gallium indium arsenide (GaInAs) alloy, gallium indium phosphide (GaInP) alloy, and/or gallium indium arsenide phosphide (GaInAsP) alloy), or a combination thereof, but the present disclosure is not limited thereto. In some embodiments, the substrate 100 may be a photoelectric conversion substrate, such as a silicon substrate or an organic photoelectric conversion layer.
In other embodiments, the substrate 100 may include a semiconductor on insulator (SOI) substrate. The semiconductor on insulator substrate may include a base plate, an insulating layer (e.g. a buried oxide layer) disposed on the base plate, and a semiconductor layer disposed on the buried oxide layer. Furthermore, the substrate 100 may be an n-type or a p-type conductive type.
In some embodiments, the substrate 100 may be a backplane for multiple light-emitting elements (e.g. edge-emitting laser chips). The backplane may further include additional elements (not shown for simplicity), such as thin film transistors (TFT), complementary metal-oxide semiconductors (CMOS), printed circuit boards (PCB), driving components, suitable conductive features, the like, or combinations thereof. Conductive features may include, but not limited to, cobalt (Co), ruthenium (Ru), aluminum (Al), tungsten (W), copper (Cu), titanium (Ti), tantalum (Ta), silver (Ag), gold (Au), platinum (Pt), nickel (Ni), zinc (Zn), chromium (Cr), molybdenum (Mo), niobium (Nb), the like, combinations thereof, or the multiple layers thereof. These elements provide circuitry that connects to the light-emitting elements. In other embodiments, the substrate 100 may include an epitaxial structure that functions as an optical waveguide. Under current or voltage appliance, the epitaxial structure may display oscillating bandgap characteristics that results in higher energy for generating the light beam 200 with higher intensity.
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Materials of the first semiconductor layer 110 and the second semiconductor layer 130 may be selected from II-VI group (for example, zinc selenide (ZnSe)) or III-V group (for example, gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), or aluminum indium gallium nitride (AlInGaN)). In some embodiments, one of the first semiconductor layer 110 and the second semiconductor layer 130 may be n-type and the other one may be p-type. For example, the first semiconductor layer 110 may be doped with n-type dopants, such as phosphorus, arsenic, or combinations thereof. The second semiconductor layer 130 may be doped with p-type dopants, such as boron, indium, gallium, or combinations thereof.
The active layer 120 may include at least one undoped semiconductor layer or at least one lightly doped layer. For example, the active layer 120 may be a quantum well (QW), which may include indium gallium nitride (InxGa1−xN) or gallium nitride (GaN), but the present disclosure is not limited thereto. In some embodiments, the active layer 120 may be a multiple quantum well (MQW) layer.
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In some embodiments, the active layer 120 of the light-emitting element 10 may include multiple transmission lines that are specifically configured in a single-axial direction, so the light may not emerge from the side surfaces of perpendicular-axial direction (such as the right side surface or the left side surface). Moreover, the light emission side surface (or the output facet) is coated with antireflection (AR) film, while the side surface opposite from the output facet (such as the back side surface) is coated with high reflection (HR) film. Such arrangement may force the emitted light rays reaching the back side surface to be reflected, and the emitted light rays reaching the output facet to be transmitted, thereby ensuring that nearly all the light rays may be emerged from the output facet only. Furthermore, the antireflection film is coated in such way that allows only a certain region of the output facet for light to emit resulting in a more concentrated light beam 200.
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Conventionally, the probe may approach the light-emitting element 10 from the region defined by the first angle θ1 in the top view, or in the y-axis direction substantially parallel with the normal direction N of the output facet 10S. However, the mechanical force exerted by the probe may inadvertently rotate the light-emitting element 10 away from its original orientation. As mentioned previously, the probe may also tip the light-emitting element 10, causing the light-emitting element 10 to climb onto one of the clamping components with relatively lower thickness. Both situations may cause a severe misalignment between the output facet 10S of the light-emitting element 10 and the optical sensor 400.
According to some embodiments of the present disclosure, from the top view, the probe may be brought in to the light-emitting element 10 from the region defined by the second angle θ2 or the third angle θ3, or in the x-axis direction along the tangent line T. The tangent line T may be considered as the center line of the regions defined by the second angle θ2 and the third angle θ3, but the present disclosure is not limited thereto. Since the tangent line T is substantially perpendicular to the normal direction N of the output facet 10S, the probe's entry direction may also be substantially perpendicular to the normal direction N of the output facet 10S. Should the testing condition requires more than one probes, multiple probes may approach the light-emitting element 10 from both regions defined by the second angle θ2 and the third angle θ3.
When the probe direction does not precisely follow the tangent line T, the region defined by the second angle θ2 or the third angle θ3 may be considered as an acceptable range for the probe's entry direction. According to some embodiments of the present disclosure, the intersecting angle between the imaginary line L1 and the tangent line T, or the intersecting angle between the imaginary line L2 and the tangent line T may be known as an included angle. The included angle may be approximately less than 5° (such as 1°, 2°, 3°, or 4°), but the present disclosure is not limited thereto. In other words, the second angle θ2 or the third angle θ3 should be equivalent to twice the included angle, which may be approximately less than 10° (such as 2°, 4°, 6°, or 8°). The second angle θ2 or the third angle θ3 is the probe's entry window according to the present disclosure.
It should be understood that, the second angle θ2 is supplementary with the first angle θ1, while the third angle θ3 is also supplementary with the first angle θ1. According to the principles of geometry, the sum of the first angle θ1 and the second angle θ2 is 180°, and the sum of the first angle θ1 and the third angle θ3 is also 180°. In other words, the first angle θ1 is much greater than the second angle θ2 or the third angle θ3. Conventionally, when the probe's entry direction is within the much broader region defined by the first angle θ1, the probability of causing misalignment between the output facet 10S and the optical sensor 400 may thus increase.
By limiting the second angle θ2 or the third angle θ3 within 10°, the probe's entry direction may be as close to the tangent line T as possible in a top view. Since the tangent line T may be parallel with the clamping component's extending direction (e.g. the stopper 320 shown in
In some embodiments, the light-emitting element 10 may be a single chip or a bar having multiple chips arranged (undiced) along the x-axis direction. The single chip may include bare die or packaged die. The light-emitting element 10 is illustrated from a top view, with a width W measured along the y-axis direction and the output facet 10S directed toward the stopper 320. When the light-emitting element 10 is the bar with multiple chips, the chips may be arranged to have the output facet 10S of every chip facing the stopper 320, but the present disclosure is not limited thereto. The light-emitting element 10 may be placed at its initial position. As the transferring method is conducting, the light-emitting element 10 may be transferred to an intermediate position 10′, followed by a terminal position 10″ (both denoted by dotted lines). The intermediate position 10′ is defined by a critical line 350 (also known as a predetermined position for the transferring method). The terminal position 10″ is where the light-emitting element 10 is fixed by the vacuum holes 310 and the stopper 320.
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In some embodiments, the dimension of one of the vacuum holes may be less than the testing object to be suctioned. Therefore, the dimension (e.g. a length L) of one of the vacuum holes 310 is less than the width W of the light-emitting element 10, such as less than 0.5 of the width W or 0.8 of the width W, but the present disclosure is not limited thereto. In order to have an effective vacuum suction, the vacuum holes need to be small enough. However, smaller vacuum hole dimension may lead to lower vacuum pressure. Therefore, there is a trade-off between the vacuum hole dimension and the vacuum pressure. The dimension (e.g. the length L) may be greater than 0.1 of the width W, such as 0.2 of the width W or 0.3 of the width W, but the present disclosure is not limited thereto. In the present embodiments, when the vacuum suction is functioning properly, the sufficient value of the vacuum pressure may be in a range approximately between 10 kbar and 150 kbar (10 kbar≤value≤150 kbar), such as 20 kbar, 50 kbar, 80 kbar, 100 kbar, or 125 kbar, but the present disclosure is not limited thereto. The sufficient value of the vacuum pressure may varied, depending on the vacuum hole dimension, the number of vacuum holes available, or other settings of the vacuum system.
When the vacuum pressure is not sufficient enough (e.g. less than the predetermine value), the vacuum suction of the light-emitting element 10 is not in effect, for example, the vacuum holes 310 are not covered by the light-emitting element 10. There are several factors that may result from the light-emitting element 10 not being properly suctioned. For example, the light-emitting element 10 to be attracted is still away from the vacuum holes 310. The light-emitting element 10 may not even reach the critical line 350. In an extreme case, during the transfer by the pusher 330, the light-emitting element 10 may be broken into segments. If the light-emitting element 10 were not intact, the vacuum suction may be compromised. Therefore, it is imperative to check whether the vacuum pressure reaches the sufficient value.
Under the circumstances when the vacuum pressure is not sufficient, the previous operations (such as the operations 1010, 1020, and 1030) need to be repeated. Before repeating the previous operations, the vacuum system should be turned off. The operation 1010 should be performed again to inspect the situation of the light-emitting element 10. For example, if the light-emitting element 10 is intact, then the method 1000 can proceed to the operation 1020 for another transferring attempt, followed by turning on the vacuum system in the operation 1030 to try to attract the light-emitting element 10 again. After that, the vacuum pressure should be checked again. If the vacuum pressure still does not reach the sufficient value, then the entire cycle of the operations 1010, 1020, and 1030 may need to be repeated the second time. Sometimes, it is common to repeat the cycle several times before the sufficient vacuum pressure is realized. Once the vacuum pressure reaches the sufficient value, the method 1000 may proceed into subsequent operations.
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The blocking element 340 may extend in the y-axis direction, and may function as an additional stopper to eliminate movement of the light-emitting element 10 in the x-axis direction. It should be noted that, unlike the stopper 320, the blocking element 340 may be not disposed in front of the output facet 10S. Therefore, it is not necessary for the blocking element 340 to maintain a relatively lower thickness. The thickness of the blocking element 340 may be greater than half the thickness of the light-emitting element 10. The addition of the blocking elements 340 is optional.
The present disclosure introduces the transferring method and the probing method to enhance the testing quality, to increase production yield, and to obtain more accurate test results. For the transferring method, the light-emitting element may be transferred to a predetermined position by a transferring component (e.g. the pusher), and attracted by the vacuum holes toward the stopper. In this way, the light-emitting element may be protected from potential damage. For the probing method, the probe may approach the light-emitting element from an entry direction substantially perpendicular to the normal direction of the output facet in a top view. In doing so, potential misalignment between the light-emitting element and the optical sensor may be decreased.
The foregoing outlines features of several embodiments so that those skilled in the art will better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. Therefore, the scope of protection should be determined through the claims. In addition, although some embodiments of the present disclosure are disclosed above, they are not intended to limit the scope of the present disclosure.
Reference throughout this specification to features, advantages, or similar language does not imply that all of the features and advantages that may be realized with the present disclosure should be or are in any single embodiment of the disclosure. Rather, language referring to the features and advantages is understood to mean that a specific feature, advantage, or characteristic described in connection with an embodiment is included in at least one embodiment of the present disclosure. Thus, discussions of the features and advantages, and similar language, throughout this specification may, but do not necessarily, refer to the same embodiment.
Furthermore, the described features, advantages, and characteristics of the disclosure may be combined or re-organized in any suitable manner in one or more embodiments. One skilled in the prior art will recognize, in light of the description herein, that the disclosure can be practiced without one or more of the specific features or advantages of a particular embodiment. In other instances, additional features and advantages may be recognized in certain embodiments that may not be present in all embodiments of the disclosure.
This application claims priority of provisional application of U.S. patent application Ser. No. 63/212,174 filed on Jun. 18, 2021, the entirety of which is incorporated by reference herein.
Number | Date | Country | |
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63212174 | Jun 2021 | US |