TFT SUBSTRATE, LIQUID CRYSTAL DISPLAY PANEL, AND METHODS FOR MANUFACTURING THE SAME

Abstract

A thin film transistor substrate includes a transparent substrate, a plurality of thin film transistors, a passivation insulating layer and a plurality of pixel electrodes. The thin film transistors are disposed on the transparent substrate and include a gate insulating film. The passivation insulating layer is disposed on the gate insulating film and covers the thin film transistors, wherein the passivation insulating layer is formed with a concave-convex surface, a plurality of contact holes and a plurality of light-transmissive regions, and the light-transmissive regions are located above the gate insulating film. The pixel electrodes are disposed on the concave-convex surface and the light-transmissive regions, wherein each pixel electrode is electrically connected to the thin film transistor via the contact hole.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional schematic view of a liquid crystal display device in the prior art.

FIG. 2 is a sectional schematic view of another liquid crystal display device in the prior art.

FIG. 3 is a sectional schematic view of a liquid crystal display device according to an embodiment of the present invention.

FIG. 4 is a sectional schematic view of a liquid crystal display device according to an alternative embodiment of the present invention.

FIG. 5 is a sectional schematic view of a liquid crystal display device according to another alternative embodiment of the present invention.

FIGS. 6 to 10 are sectional schematic views of a method for manufacturing a liquid crystal display device of the present invention.

Claims

1. A thin film transistor substrate comprising: a transparent substrate;a plurality of thin film transistors disposed on the transparent substrate and comprising a gate insulating film;a passivation insulating layer disposed on the gate insulating film and covering the thin film transistors, wherein the passivation insulating layer is formed with a concave-convex surface, a plurality of contact holes and a plurality of light-transmissive regions, and the light-transmissive regions are located above the gate insulating film; anda plurality of pixel electrodes disposed on the concave-convex surface and the light-transmissive regions, wherein each pixel electrode is electrically connected to the thin film transistor via the contact hole.

2. The thin film transistor substrate as claimed in claim 1, wherein the passivation insulating layer is formed with the concave-convex surface, the contact holes and the light-transmissive regions by a gray-scale photomask and a photolithography process.

3. The thin film transistor substrate as claimed in claim 1, wherein the passivation insulating layer is made of one of organic material and inorganic material.

4. The thin film transistor substrate as claimed in claim 1, wherein the pixel electrode is made of electrically conductive and transflective material.

5. The thin film transistor substrate as claimed in claim 1, wherein the pixel electrode comprises a transparent electrode and a transflective film.

6. The thin film transistor substrate as claimed in claim 5, wherein: the transparent electrode is disposed on the concave-convex surface and the light-transmissive region, and is electrically connected to the thin film transistor via the contact hole; andthe transflective film is disposed on the transparent electrode.

7. The thin film transistor substrate as claimed in claim 1, wherein the pixel electrode comprises a transparent electrode and a reflective film.

8. The thin film transistor substrate as claimed in claim 7, wherein: the transparent electrode is disposed on the concave-convex surface and the light-transmissive region, and is electrically connected to the thin film transistor via the contact hole; andthe reflective film is disposed on the transparent electrode and exposes out the transparent electrode which is located on the light-transmissive region.

9. The thin film transistor substrate as claimed in claim 2, wherein the gray-scale photomask is a slit mask.

10. The thin film transistor substrate as claimed in claim 2, wherein: the thin film transistors further comprise a plurality of low electrodes of storage capacitor; andthe gate insulating film and the passivation insulating layer are located between the low electrodes of storage capacitor and the pixel electrode so as to define a dielectric layer of storage capacitor.

11. The thin film transistor substrate as claimed in claim 10, wherein the dielectric layer of storage capacitor which is located between the low electrode of storage capacitor and the pixel electrode has a predetermined thickness by using the same gray-scale photomask and photolithography process.

12. A method for manufacturing a thin film transistor substrate comprising the steps of: providing a transparent substrate;forming a plurality of thin film transistors on the transparent substrate, wherein the thin film transistors comprise a gate insulating film and a plurality of low electrodes of storage capacitor, wherein the low electrodes of storage capacitor and the gate insulating film are formed on the transparent substrate in sequence;disposing a passivation insulating layer on the thin film transistors;patterning the passivation insulating layer to form with a concave-convex surface and a plurality of contact holes and a plurality of light-transmissive regions, wherein the light-transmissive regions are located on the gate insulating film; andforming a plurality of pixel electrodes on the concave-convex surface and the light-transmissive regions so as to form a plurality of pixel regions of a thin film transistor substrate, wherein each pixel electrode is electrically connected to the thin film transistor via the contact hole.

13. The method as claimed in claim 12, wherein the passivation insulating layer is patterned to form with the concave-convex surface, the contact holes and the light-transmissive regions by a gray-scale photomask and a photolithography process.

14. The method as claimed in claim 13, further comprising the steps of: forming a dielectric layer of storage capacitor which is located above the low electrode of storage capacitor to have a predetermined thickness by using the same gray-scale photomask and photolithography process, wherein the gate insulating film and the passivation insulating layer are located between the low electrode of storage capacitor and the pixel electrode so as to define the dielectric layer of storage capacitor.

15. A method for manufacturing a liquid crystal display panel comprising the steps of: providing a transparent substrate;forming a plurality of thin film transistors on the transparent substrate, wherein the thin film transistors comprise a gate insulating film and a plurality of low electrodes of storage capacitor, wherein the low electrodes of storage capacitor and the gate insulating film are formed on the transparent substrate in sequence;disposing a passivation insulating layer on the thin film transistors;patterning the passivation insulating layer to form with a concave-convex surface and a plurality of contact holes and a plurality of light-transmissive regions, wherein the light-transmissive regions are located on the gate insulating film; andforming a plurality of pixel electrodes on the concave-convex surface and the light-transmissive regions so as to form a plurality of pixel regions of a thin film transistor substrate, wherein each pixel electrode is electrically connected to the thin film transistor via the contact hole; anddisposing a liquid crystal layer between the thin film transistor substrate and an upper substrate.

16. The method as claimed in claim 15, wherein the passivation insulating layer is patterned to form with the concave-convex surface, the contact holes and the light-transmissive regions by a gray-scale photomask and a photolithography process.