Patent Application
20160049897
The present invention relates to a thermal emission source that converts heat to light.
In general, heating an object causes thermal emission which is a radiation of light (electromagnetic waves) having a spectrum that depends on substances constituting the object and the temperature of the object. Thermal emission generated from an ideal object that completely absorbs light given externally is called a blackbody radiation, and the object is called a blackbody. Blackbody radiation has an intensity distribution over a wide wavelength range, and light having a wavelength spectrum whose distribution is determined only by the temperature is generated. When an ordinary object is heated, it also generates light having a wavelength spectrum distribution over a wide wavelength range; however, it is known that the wavelength spectrum of ordinary object cannot exceed that of a blackbody at a same temperature. Using such thermal emission, light with a spectrum having an intensity distribution over a wide wavelength range is emitted. That is, a light source (thermal emission source) that provides a wide wavelength spectrum can be obtained by a combination of an object and a heat source.
Meanwhile; instead of light having such wide wavelength spectrum, there has also been a demand for a thermal emission source that emits light having a large intensity in a particular wavelength band. Demand of such light source can be found, for example, in the field of solar cells. In solar cells that are currently in practical use, only light in a particular wavelength band in a wide wavelength range of sunlight contributes to photoelectric conversion, and energy of light of other wavelengths is wasted.
Non-Patent Literatures 1 and 2 each describe a thermal emission source including a two-dimensional photonic crystal composed of a plate member having a quantum well structure, which is formed by alternately stacking layers of AlGaAs and layers of GaAs, including a plurality of holes formed on a triangular grid in the plate member. When the plate member is heated, thermal excitation of electrons between energy levels in the quantum well causes emission of light having a plurality of wavelengths corresponding to respective differences between the energy levels, where the wavelength spectrum of the emission of light is narrower than those of common thermal emission sources. The two-dimensional photonic crystal can resonate with light having a predetermined wavelength determined by a periodicity of holes, and selectively intensify the light of that wavelength. The combination of the quantum well and the two-dimensional photonic crystal provides a wavelength spectrum having a narrow bandwidth around the predetermined wavelength and having a large peak intensity.
[Patent Literature 1] WO2005/086302
[Patent Literature 2] WO2007/029661
[Patent Literature 3] JP 2001-074955
[Non Patent Literature 1] De Zoysa Menaka et al., “Conversion of broadband to narrowband thermal emission through energy recycling”, [online], Jul. 8, 2012, Nature Photonics, [Searched on Feb. 26, 2013], Internet <URL :http ://www.nature.com/nphoton/journal/v6/n8/full/nphoton.2012.146 html>
[Non Patent Literature 2] National University Corporation, University of Kyoto, “Success in significantly narrowing thermal emission spectrum from object—This achieves crucial step toward effective use of energy such as highly-efficient solar cell applications—”, [online], Jul. 9, 2012, University of Kyoto New Index 2012, [Searched on Feb. 26, 2013], Internet <URL:http://www.kyoto-u.ac.jp/ja/news_data/h/h1/news6/2012/120709—1.html>
In the thermal emission sources described in Non-Patent Literatures 1 and 2, the peak wavelength of the wavelength spectrum is approximately 10 μm, while the wavelength band contributing to photoelectric conversion in a solar cell is around 1.0 μm if the solar cell is of a generally-used silicon type, and is around 1.5 μm if the solar cell is of a silicon-germanium type. Also, a quantum well structure requires use of two kinds of materials that have respective bandgaps largely different from each other, and thus, as long as a quantum well structure is used, it is difficult to set a peak wavelength to a desired value because combinations of available materials are limited. Therefore, in the thermal emission sources described in Non-Patent Literatures 1 and 2, the ratio of light contributing to photoelectric conversion in a solar cell cannot be increased, resulting in failure to achieve photovoltaic power generation with high photoelectric conversion efficiency.
The aforementioned problem of the difficulty in arbitrarily setting the peak wavelength is not specific to thermal emission sources that are used in combination with solar cells, but arises in various uses.
An object of the present invention is to provide a thermal emission source that allows a wide range of material choices so that light having a desired peak wavelength can easily be obtained. The present invention also provides a photovoltaic device using the thermal emission source and having high photoelectric conversion efficiency.
In order to attain the aforementioned object, a thermal emission source according to the present invention includes a thermo-optical converter having an optical structure in which a refractive index distribution is formed in a member composed of an intrinsic semiconductor configured to resonate with light of a shorter wavelength than a wavelength corresponding to a bandgap of the intrinsic semiconductor,
In the thermal emission source according to the present invention, when heat is externally supplied to the thermo-optical converter, energy is absorbed by the intrinsic semiconductor, causing thermal excitation of electrons from the valance band to the conduction band across the bandgap. Such absorption is called “interband absorption”. Then, as a result of the transition of the excited electrons to the valance band across the bandgap, light is produced. The light has higher energy than that of the bandgap and thus has wavelengths that are shorter than a wavelength λg =hc/Eg (h is the Planck's constant and c is the speed of light) corresponding to the energy Eg of the bandgap. Therefore, the wavelength spectrum of the light generated by the intrinsic semiconductor because of the interband absorption is within a band of wavelengths that are shorter than the wavelength λg (
Then, among the light generated by the interband absorption as stated above, light of wavelengths around a wavelength that causes resonance in the optical structure (hereinafter referred to as “resonant wavelength λr”;
According to the aforementioned principle, the thermal emission source according to the present invention produces thermal emission having a resonant wavelength λr as the peak wavelength and having a wavelength spectrum having a narrower width than that of the spectrum of the thermal emission.
In the optical structure, not only light of the resonant wavelength λr is generated, but also resonance (higher-order resonance) may occur on the wavelength shorter than the resonant wavelength λr. However, the maximal value of intensity of thermal emission is restricted to the intensity of the blackbody radiation spectrum, and the intensity of the blackbody radiation spectrum sharply decreases on the short wavelength side. Thus, light emission due to higher-order resonance can sufficiently be suppressed.
The width of the bandgap of the intrinsic semiconductor changes depending on the temperature. The resonant wavelength in the thermo-optical converter is determined by the configuration of the optical structure and thus does not directly depend on the temperature. However, the refractive index changes according to the temperature, and along with the change in the refractive index, the light speed changes. Therefore, the resonant wavelength changes depending on the temperature. Thus, the cutoff wavelength λg and the resonant wavelength λr may be determined based on the width of the bandgap and the refractive index of the intrinsic semiconductor at the heating temperature when the thermal emission source according to the present invention is used.
The present invention uses an intrinsic semiconductor and allows a wider range of material choices compared to a case where a quantum well structure obtained by combination of two types of semiconductors is used. Thus, a thermal emission source that produces light of an intended wavelength can easily be obtained. For the intrinsic semiconductor, any of various materials such as Si (silicon), SiC (silicon carbide) and Cu2O (copper oxide (I)) can be used. The cutoff wavelength λg is approximately 1700 nm (1400 K) in the case of Si, approximately 800 nm (2200 K) in the case of 3C—SiC (SiC having a cubic structure called “3C” from among SiCs), and is approximately 900 nm (1200 K) in the case of Cu2O. The cutoff wavelength λg described here is the value at the temperature indicated in each following bracket, and each of these temperatures is an example which may be used in the thermal emission source, which is determined in consideration of a melting point of each intrinsic semiconductor (Si: 1687K, 3C—SiC: 3100K or Cu2O: 1505K).
If the resonant wavelength λr is too close to the cutoff wavelength λg, the portion on the long wavelength side of the wavelength spectrum of the thermal emission is cut off. Thus it is desirable that the resonant wavelength λr be shorter than the cutoff wavelength λg to some extent. For example, it is desirable that the resonant wavelength λr be 1600 nm (temperature: 1400 K) or shorter if the intrinsic semiconductor is Si, approximately 750 nm (2200 K) or shorter if the intrinsic semiconductor is 3C—SiC and approximately 850 nm (1200 K) or shorter if the intrinsic semiconductor is Cu2O.
It is desirable that the optical structure be asymmetric with respect to the direction in which thermal emission is emitted from the thermal emission source. If the optical structure has no such asymmetry (that is, if the optical structure is symmetric in the direction), thermal emission is emitted both in the direction and in the direction opposite to the direction with the same intensity. If the optical structure has such asymmetry, thermal emission is emitted in one direction with a larger intensity.
An example of the optical structure is a two-dimensional photonic crystal structure formed by periodically providing, in a plate member composed of an intrinsic semiconductor, areas each having a refractive index that is different from that of the plate member (different refractive index area). For each of the different refractive index areas, a hole (air or vacuum) can be used, or a member composed of a material that is different from the intrinsic semiconductor can be used. In this example, standing waves of a wavelength determined by the length of periodicity of the different refractive index areas are formed in the thermo-optical converter. Also, it is desirable that in the photonic crystal structure of this example, the different refractive index areas be asymmetric with respect to the direction perpendicular to the plate member. Consequently, thermal emission can be emitted to one surface of the plate member with a larger intensity. Examples of the different refractive index areas having such asymmetry includes those having a triangular or trapezoidal shape in the cross-section perpendicular to the plate member; however, different refractive index areas that open in one surface of the plate member and do not open in the other surface of the plate member are desirable in terms of easy fabrication.
For the optical structure, it is desirable to use such a structure that, on a surface of a base made of material having a refractive index lower than that of the intrinsic semiconductor, members (high-refractive index members) made of the intrinsic semiconductor and having the same shape are two-dimensionally arranged. The arrangement of the high-refractive index members does not need to be periodic. Such configuration allows formation of standing waves of a wavelength corresponding to the size of the high-refractive index members within each high-refractive index member. Therefore, the high-refractive index member itself can be made to function as an optical resonator (high-refractive index member optical resonator), enabling light whose wavelength of the standing waves is resonant wavelength to be selectively amplified. Since the optical structure is asymmetric as stated above, thermal emission can be emitted in one direction with a larger intensity.
For the optical structure, a three-dimensional photonic crystal structure having a three-dimensional periodic refractive index distribution may be used. In the three-dimensional photonic crystal structure, a wavelength band in which light cannot exist within the structure can be formed irrespective of the direction of polarization of light. Such a wavelength band is formed for light for the reason similar to the bandgap for electrons, and is called “photonic bandgap” to distinguish from the bandgap for electrons.
In the present invention, use of a three-dimensional photonic crystal structure enables selectively amplifying light of a predetermined wavelength that causes resonance in the three-dimensional photonic crystal structure (that is, light of a wavelength that can exist in the three-dimensional photonic crystal structure) while preventing production of light of wavelengths in the photonic bandgap, whereby light of the predetermined wavelength can efficiently be produced.
Combining the thermal emission source according to the present invention with a solar cell, a highly-efficient photovoltaic device can be obtained. In other words, the photovoltaic device includes a thermo-optical converter according to the present invention, and a solar cell for performing photoelectric conversion by receiving light produced by the thermo-optical converter and using the light having a wavelength band including the resonant wavelength.
In the photovoltaic device according to the present invention, the solar cell receives light with the wavelength spectrum having a narrower width (but capable of making photoelectric conversion) than that of the wavelength spectrum of sunlight and including the resonant wavelength from the thermo-optical converter, the intensity of light having the wavelength band that makes photoelectric conversion is enhanced compared to a case where the solar cell directly receives sunlight. Thus, the photoelectric conversion efficiency is enhanced compared to a case where the solar cell directly receives sunlight. For example, a silicon solar cell cannot perform photoelectric conversion at wavelengths about 1000 nm or longer, and thus it is desirable to set the resonant wavelength λr of the thermo-optical converter at 1000 nm or shorter.
The present invention enables use of an intrinsic semiconductor that allows a wider range of material choices, enabling easy provision of a thermal emission source that produces narrow-band light having a desired peak wavelength.
The present invention also enables provision of a photovoltaic device having a higher photoelectric conversion efficiency than that in a case where a solar cell directly receives sunlight.
Embodiments of a thermal emission source according to the present invention will be described with reference to
As illustrated in
From among the above parameters, a resonant wavelength λr in the optical structure in the present embodiment is determined by the refractive index n and the radius r of the rods 11 and the period length “a” of the square grid as described below.
In the thermo-optical converter, light propagates in a height direction of the rods 11 along the rods 11 having a higher refractive index than that of the surrounding areas. Then, the light is reflected by an upper end and a lower end of each rod 11, whereby standing waves are generated and a resonant state of the light is formed. The resonant wavelength λr depends on the height h of the rods 11 and also depends on the radius r of the rods 11 since the effective refractive index varies when the light leaks from the rods 11. A difference in period length “a” of the rods 11 affects the resonant wavelength λr in terms of a difference in effective refractive index, but not so largely as a difference in radius r of the rods 11 does. The rods 11 having an excessively short period length “a” causes the wide range of electromagnetic field overlapped distribution among the rods 11 and interaction thereby occurs, resulting in variation in the resonant wavelength depending on the emission angle of the light. On the other hand, the period length “a” having a longer period length than that of a light emission wavelength invokes high-order diffraction, whereby radiation in one resonant mode is generated in a plurality of directions. Therefore, it is desirable that the period length “a” be longer than a distance of oozing of an electromagnetic field from each rod and be shorter than the light emission wavelength.
In the present embodiment, the radius r of the rods 11 is set to 100 nm and the height h of the rods is set to 500 nm, whereby the wavelength λr of a resonant mode generated in each rod becomes 950 nm. Furthermore, the period length “a” is set to 600 nm, which is shorter than the resonant wavelength λr and sufficiently larger than the rod radius, whereby emission angle dependency is suppressed while the light emission intensity is maintained.
A principle of heat to light conversion by the thermal emission source 10 according to the first embodiment will be described. When the thermal emission source 10 is heated to a temperature of around 1400 K, energy absorption caused by interband absorption in Si, which is an intrinsic semiconductor on the wavelength shorter than a cutoff wavelength λg for Si 1700 nm (on the high energy side that is higher than 0.73 eV, which is photon energy corresponding to the cutoff wavelength λg) occurs, and light emission corresponding to the energy occurs on the wavelength shorter than the cutoff wavelength λg (high energy side). A spectrum of the light generated as above, as indicated in
An example of a wavelength spectrum that can be obtained, by calculation, by the thermal emission source 10 according to the first embodiment is indicated in
As described above, the thermal emission source 10 according to the present embodiment can selectively emit only wavelengths that are around the resonant wavelength λr=950 nm. A silicon solar cell cannot perform photoelectric conversion of light of wavelengths exceeding approximately 1000 nm. Therefore, as illustrated in
Next, a result of measurement using an actually-produced thermal emission source 10 will be described with reference to
Although an example in which Si is used for the material of the rods 11 has been described up to here, an intrinsic semiconductor other than Si such as SiC or Cu2O may be used. If 3C—SiC is used for the material of the rods 11, the cutoff wavelength λg is 800 nm, which is shorter than that in the case of Si, and thus, the height and the radius of the rods 11 is set to be small compared to those in the case of Si. This obtains a thermal emission source that produces thermal emission having a wavelength spectrum with a peak on the wavelength shorter than 750 nm. A thermal emission source having such characteristics as above can suitably be used as a light source that emits thermal emission resulting from conversion of sunlight to a GaAs solar cell.
Also, although in the first embodiment, the rods 11 are arranged in a square grid, arrangement in, e.g., a triangular grid may be employed. Also, although the shape of the rods 11 is a columnar shape, a shape such as a square rod, a cone or a pyramid may be employed. Furthermore, the surrounding areas of the rods 11 may be filled with a material having a lower refractive index than that of the rods 11, such as SiO2.
As illustrated in
An example of a wavelength spectrum obtained by the thermal emission source 20 according to the second embodiment is indicated in
The material of the block member 21 is not limited to Si mentioned above and, e.g., SiC or Cu2O may be used. Also, instead of the columnar holes 22, members having a lower refractive index than that of the block member 21 may be used. Alternatively, as illustrated in
As illustrated in
In the present embodiment, a period length “a” of the holes 32 is set to 600 nm. Also, a radius of the holes 32 is set to 150 nm. Also, the plate member 31 has a thickness of 500 nm, and the holes 32 are formed to have a depth of 200 nm from one surface of the plate member 31. The holes 32 are provided so as to form openings in one surface of the plate-like member 31 and not form the openings in the other surface, which forms asymmetry in a direction perpendicular to the plate member 31. Thus, thermal emission can be emitted with a larger intensity from the surface of the plate member 31 through which the holes 32 extend. In the present embodiment, as a diameter of the holes 32 is larger, an average refractive index in a case of combining the plate member 31 and the holes 32 is smaller, and thus, if the period length “a” remains constant, as the diameter is larger, the wavelengths in air is shorter.
In the present embodiment, only light of wavelengths close to a resonant wavelength λr=1600 nm on the wavelength shorter than a cutoff wavelength λg1700 nm is selected and amplified and emitted to the outside.
The thickness of the plate-like member 31 can be changed within a certain range while the resonant wavelength is maintained to be similar, by adjusting, e.g., the diameter, depth or periodicity of the holes. However, excessive increase in the thickness causes energy absorption by intrinsic carriers in the intrinsic semiconductor, which may result in undesired light emission on the wavelength longer than the cutoff wavelength λg. As an example, each energy absorptance of a Si plate member having a thickness of 0.5 μm (500 nm), which is the same as that of the present embodiment, and Si plate members having a thickness of 10 μm and 100 μm, respectively, when the members are heated to 1400 K (1127° C.) was obtained by calculation. As shown in
Such unnecessary light emission on the long wavelength side may occur in the first and second embodiments. In the first embodiment, an effective thickness of intrinsic semiconductor averaged in a direction parallel to a surface of the base 13 can be changed by changing the height or diameter of the rods 11 made of the intrinsic semiconductor, enabling adjustment so that light emission on the long wavelength side is suppressed. In the second embodiment, the periodicity of the columnar holes 22 or the rod members 29 is adjusted so that a three-dimensional photonic bandgap is formed on the wavelength longer than the resonant wavelength, whereby light on the longer wavelength cannot exist in the three-dimensional photonic crystal structure. Therefore, production of the light is thus suppressed.
Although an example in which Si is used for the material of the plate member 31 has been described up to here, an intrinsic semiconductor other than Si such as SiC or Cu2O may be used. Also, although an example in which the holes 32 are arranged in a triangular grid has been described up to here, arrangement in, e.g., a square gird may be employed. Although a planar shape of the holes 32 is a round shape, a planar shape other than a round shape such as a regular triangle shape may be employed. Furthermore, instead of the holes 32, members having a lower refractive index than that of the material of the plate member 31 such as members made of SiO2 may be provided.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2013-047281 | Mar 2013 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2014/055056 | 2/28/2014 | WO | 00 |
