Claims
- 1. A thermal head comprising:
- a high thermal conductivity substrate consisting essentially of silicon (Si);
- a heat accumulating layer formed over said substrate, wherein said heat accumulating layer is composed of a compound including Si, at least one transition metal, and oxygen, and wherein said heat accumulating layer is formed into a columnar black layer;
- a plurality of heater elements formed over said heat accumulating layer in line;
- a common electrode and an individual electrode energizing each of said heater elements;
- a plurality of outer connecting terminals contacting the common electrode and the individual electrodes; and
- a protective layer formed over said accumulating layer, said heater elements and said electrodes;
- wherein a stress-resistant layer composed of an insulating high-modulus ceramic is provided over said heat accumulating layer, and a portion of said stress-resistant layer is interposed between said heat accumulating layer and at least one of said outer connecting terminals.
- 2. A thermal head according to claim 1, wherein said stress-resistant layer comprises AlN.
- 3. The thermal head according to claim 1, wherein said stress-resistant layer comprises Al.sub.2 O.sub.3.
- 4. A thermal head comprising:
- a high heat conduction substrate consisting essentially of silicon (Si);
- a heat accumulative layer formed as a columnar black film over the substrate using vapor deposition, said heat accumulative layer including Si, at least one transition metal, and oxygen;
- an anti-stress layer formed over the heat accumulative layer, wherein said anti-stress layer comprises a high modulus ceramic;
- a plurality of heat generating elements formed in rows over the anti-stress layer;
- a common electrode formed on the plurality of heat generating elements;
- a plurality of individual electrodes, each individual electrode formed on an associated one of the plurality of heat generating elements;
- a plurality of outer connecting terminals contacting the common electrode and the individual electrodes; and
- a protective layer formed over the heat accumulative layer, the plurality of heat generating elements, the common electrode and the plurality of individual electrodes,
- wherein a portion of said anti-stress layer is interposed between said heat accumulative layer and at least one of said outer connecting terminals.
- 5. The thermal head of claim 4, wherein the heat accumulating layer includes at least one of Ta, W, Cr, and Mo.
- 6. The thermal head of claim 4, wherein the high-modulus ceramic includes AlN.
- 7. The thermal head of claim 4, wherein the heat generating elements are selected from Ta.sub.2 N and Ta-SiO.sub.2.
- 8. The thermal head of claim 4, wherein the high-modulus ceramic includes Al.sub.2 O.sub.3.
- 9. The thermal head of claim 4, wherein the high-modulus ceramic includes SiC.
Priority Claims (1)
Number |
Date |
Country |
Kind |
6-178954 |
Jul 1994 |
JPX |
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Parent Case Info
This application is a continuation of application Ser. No. 08/504,508, filed Jul. 20, 1995, abandoned.
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4963893 |
Homma et al. |
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Foreign Referenced Citations (2)
Number |
Date |
Country |
6-31959 |
Feb 1994 |
JPX |
6-191073 |
Jul 1994 |
JPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
504508 |
Jul 1995 |
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