Thermal imaging devices, such as non-contact thermal cameras, are used to provide feedback in systems that generate heat, such as additive manufacturing machines (e.g., 3D printers). For instance, by monitoring the heat generated within a system, extreme heating conditions that might otherwise damage the system, or parts of the system, can be detected.
In the following detailed description, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration specific examples in which the disclosure may be practiced. It is to be understood that other examples may be utilized and structural or logical changes may be made without departing from the scope of the present disclosure. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present disclosure is defined by the appended claims. It is to be understood that features of the various examples described herein may be combined, in part or whole, with each other, unless specifically noted otherwise.
Cameras or other types of thermal imaging devices can be employed in various manufacturing environments, including highly thermally dynamic environments such as additive manufacturing machines. It is desirable to maintain the thermal imaging device in a constant well-defined temperature, or range of temperature, environment to aid accuracy of the thermal sensor. It is desirable to control the temperature of a thermal camera for thermal feedback accuracy and stability during an additive manufacturing process, for example. It is desirable to maintain the thermal camera in an isothermal state. Accuracy of measurements detected by thermal imaging device can be influenced, or effected, by the temperature of the sensor itself. Consistency of mathematical models, or techniques, that relate a signal generated by the thermal sensor to the temperature of the observed region by the thermal sensor can decrease as the sensor's temperature variance is incorporated. This effect can be greater for a time variant temperature profile of a thermal sensor. It is desirable to maintaining a thermal imaging device (e.g., thermal camera) at a constant temperature to improve the measurement accuracy of the thermal sensor.
Thermal imaging devices can be employed to detect that a material in additive manufacturing machine is reaching a desired temperature for proper fusion, for example. When employed in an additive manufacturing machine, the ambient temperature can be higher than a tolerable level for the sensor to function properly. An enclosure can be included to aid in protecting the thermal imaging device from accumulation of contaminants, such as powders, and thermal influences within the additive manufacturing environment. An enclosure can be placed over the thermal imaging device (e.g., thermal camera) and the volume around the sensor purged of hot, dust infused air with cold and clean air. Insulation of the thermal camera can be useful to direct currents of cold air around the thermal camera and reduce internal temperature gradients. Temperature control within the enclosure can also be aided by heat transference generated from a heat generating device. The temperature of the thermal imaging device can be further moderated, or controlled, with heat generated by a heating device, such as a transistor. Dissipative heat generated by a transistor, or transistors, can be employed to moderate the temperature of the thermal imaging device. In this manner, the thermal imaging device can be maintained at a desired temperature(s) with controlled heat conductance and insulation.
Thermal imaging device 12 can be any of a variety of thermal imaging devices, such as a thermal camera, for capturing thermal data including temperature. In one example, thermal imaging device 12 is a non-contact thermal imaging device. Thermal imaging device 12 can be an infrared imaging device. In one example, thermal imaging device 12 is a bolometer. Thermal imaging device 12 includes a sensor 20 to sense a thermal image of a target object. The thermal image obtained by sensor 20 can include a thermal profile of the target object.
Thermal imaging device 12 is disposed within a cavity 22 formed, or defined within thermal jacket 16. Thermal jacket 16 and cavity 22 can be any appropriate size or shape. Cavity 22 is sized and shaped to accommodate thermal imaging device 12 and create a space, or gap, between the thermal imaging device 12 and an interior surface 23 of thermal jacket 16 defined by cavity 22. In one example, cavity 22 is generally centered within thermal jacket 16 along x and y axes. In one example, thermal jacket 16 includes opposing sides 24a, 24b and 26a, 26b and a bottom 28. In one example, sides 24a, 24b can be parallel with one another and generally of equivalent wall thickness. Similarly, sides 26a, 26b can be parallel with one another and generally of equivalent wall thickness. In one example, bottom 28 is generally planar and perpendicular to sides 24a, 24b, 26a, 26b. In one example, bottom 28 has a wall thickness that is less than the thickness of sides 24a, 24b, 26a, 26b. In one example, a top 29 is included opposite bottom 28.
Thermal jacket 16 includes an opening 30 aligned and sized to accommodate a field of view of sensor 20. Opening 30 can be extended through bottom 28, as shown, or any appropriate side of thermal jacket 16 to accommodate sensor 20. A window 32 can be disposed across opening to aid in maintaining a thermal state of thermal imaging device. Window 32 can be infrared transparent and scratch resistant.
Thermal jacket 16 has a very small Biot number, (e.g., less than 0.1) and is highly isothermal. Thermal jacket 16 can be formed of a highly thermally conductive material that can conduct thermal energy input throughout thermal jacket 16 with minimal thermal gradient across thermal jacket 16. For example, thermal jacket 16 can be formed of aluminum or other appropriate material. Thermal jacket 16 can be a solid body, a hollow shell, or a shell of a first material with second material disposed within the shell. In one example, thermal jacket 16 is formed as a closed aluminum shell. In one example, thermal jacket 16 is at least partially formed of a ceramic fill silicon foam. In one example, thermal jacket 16 is formed of an aluminum shell with ceramic fill silicon foam disposed within the shell. Thermal jacket 16 is thermally connected to transistor 14. Transistor 14 is thermally conductively coupled to thermal jacket 16 to transfer dissipative heat generated by transistor 14 to thermal jacket 16. One or more transistors 14 can be included, as appropriate.
In one example, a thermal interface 34 is included to fully extend between transistor 14 and thermal jacket 16. Transistor 14 can be thermally connected to thermal jacket 16 via any one or multiple thermal interfaces 34. In some examples, thermal interface 34 is electrically nonconductive. Thermal interface 34 can include wire, thermally conductive foam (e.g., ceramic filled silicon foam), thermally conductive paste, or other suitable thermally conductive material. In some examples, thermal interface 34 is compliant or flexible and conforms to accommodate space tolerances between transistor 14 and thermal jacket 16.
Insulative shell 18 is disposed, or extends, around thermal jacket 16. Insulative shell 18 is thermally and electrically insulative. Thermal jacket 16 can be maintained within insulative shell 18 in a spaced relationship with minimal contact formed between thermal jacket 16 and insulative shell 18 to minimize conductive thermal losses into the insulative shell 18. Insulative shell 18 can include an opening 38 aligned with opening 30 in thermal jacket 16 and the field of view of thermal imaging device 12. In one example, insulative shell 18 is formed of a plastic. In one example, insulative shell 18 is formed of a thermoplastic such as a modified polyphenylene.
Transistor circuitry 54 includes transistor 14. Transistor 14 can be a NPN or N-type Metal Oxide Field Effect Transistor (MOSFET), although other transistors (e.g., P-type, or PNP) or architectures that can be held partially on would also be suitable. Heat from transistor 14 can be controlled by operating transistor circuitry 54 as a variable resistor. Feedback circuitry 58 controls current, providing for a linear relationship between control voltage and power output. This can provide an advantage for a stable system, as most heaters using a resistor would have a non-linear relationship between control voltage and power.
Although illustrated as a closed loop system, system 50 can be run open loop, or closed loop. In one example, control circuitry 52 and feedback circuitry 58 employ Proportional Integral (PI) control. Besides the linear voltage to power relationship, transistor 14 also provides a very low cost compact package that can spread heat out and be coupled with a heat sink. Typical power resistors are much larger and more costly. In one example, system 50 can operate at approximately 150 degrees Celsius. In one example, higher temperature transistors can be employed. In another example, system 50 can operate at ambient temperatures. Temperature monitor circuitry 56 can include a temperature sensor to close the loop. The temperature sensor can be any sensor that can map signal to temperature. In one example, a platinum Resistance Temperature Detector (RTD) sensor is employed. In another example, a Negative Temperature Coefficient (NTC) sensor is employed. In one example, transistor 14 performs as both the heater and the temperature sensor by switching the mode dynamically.
Operational amplified (op-amp) circuitry 53 can control the voltage drop over transistor 14 via feedback circuitry 58. In one example, where transistor 14 is a MOSFET, a small resistor on source terminal of the MOSFET is connected to ground. Op-amp circuitry 53 can then vary the gate voltage to control the voltage at the resistor. The effect is that an input voltage to op-amp circuitry 53 directly controls the current through the MOSFET while the drain voltage remains fixed, thereby giving variable power control.
Transistor 114 can be powered by PCB 136 and provided adjacently or remotely from thermal imaging device 112. In one example, transistor 114 is a powered transistor and PCB 136 is employed. In some examples, both transistor 114 and thermal imaging device 112 can be mounted to a printed circuit board (PCB) 136. PCB 136 has a first side 148a and opposing second side 148b. In one example, thermal imaging device 112 and transistor 114 are mounted to first side 148a of PCB 136. Thermal imaging device 112 is mounted to PCB 136 to provide power and signal to thermal imaging device 112 as well as conduct heat into thermal imaging device 112. Thermal imaging device 112 can be socket mounted, or otherwise mountably secured, to PCB 136. Transistor 114 can include leads, or traces, on PCB 136 that conduct heat into thermal imaging device 112 from transistor 114. PCB 136 can include a thermal camera integrated circuit, a thermopile, a microcontroller, and variously other circuitry and components not specifically shown. A thermopile can be included to convert thermal energy into electrical energy, for example, when thermal imaging device 112 does not include an embedded temperature sensor. A microcontroller and/or circuits can be included to control the heat transfer to thermal imaging device 112 and form a control loop to actively control transistor 114 to affect the appropriate, or desired, temperature control of thermal imaging device 112 and can employ feed-back and feed-forward techniques.
In some examples, PCB 136 is disposed within housing, or enclosure, 144. In one example, thermal jacket 116 encompasses, or substantially encloses, surfaces of thermal imaging device 112 not disposed against PCB 136. Thermal jacket 116 extends around a perimeter of thermal imaging device 112, between PCB 136 and interior of 144, and across thermal imaging device 112 opposite the side attached to PCB 136. Thermal jacket 116 includes an opening 130 aligned with an opening of enclosure 146 and a sensor 120 of thermal imaging device 112. Thermal jacket 116 can be spaced or separated from PCB 136 by transistor 114 and a thermal interface 134. Thermal jacket 116 can extend to and contact thermal interface 134 for conduction of thermal energy from transistor 114. Insulative shell 118 extends around thermal jacket 116 and can be maintained within insulative shell 118 in a spaced relationship with minimal contact formed between thermal jacket 116 and insulative shell 118 to minimize conductive thermal losses into insulative shell 118. Insulative shell 118 can extend around thermal jacket 116, between thermal jacket 116 and housing 144 to form a thermal barrier. In some cases, insulative shell 118 extends toward PCB 136 in near contact with a minimized gap between to minimize any airflow into insulative shell 118. Insulative shell 118 has minimal contact with PCB 136 in order to minimize conductive loses into insulative shell 118.
Although specific examples have been illustrated and described herein, a variety of alternate and/or equivalent implementations may be substituted for the specific examples shown and described without departing from the scope of the present disclosure. This application is intended to cover any adaptations or variations of the specific examples discussed herein. Therefore, it is intended that this disclosure be limited only by the claims and the equivalents thereof.
Filing Document | Filing Date | Country | Kind |
---|---|---|---|
PCT/US2017/041516 | 7/11/2017 | WO | 00 |