The present disclosure relates to a thermal print head.
For example, the Japanese Patent Publication No. 2019-98667 (patent publication 1) discloses a thermal print head. The thermal print head disclosed in patent document 1 includes a substrate, a glaze layer and a wiring layer. The glaze layer is disposed on the substrate. The wiring layer is disposed on the glaze layer.
The wiring layer includes a plurality of first bonding pads and a plurality of second bonding pads. The plurality of first bonding pads are arranged along a first direction to form one row. The plurality of second bonding pads are arranged along the first direction to form one row. The row of the first bonding pads is located on a position shifted from the row of the second bonding pads in a second direction. The second direction is a direction perpendicular to the first direction. A lead wiring portion extends from the first bonding pads and the second bonding pads along the second direction.
Details of the embodiments of the present disclosure are given with the accompanying drawings below. The same or equivalent parts are denoted by the same numerals or symbols in the accompanying drawings below, and the repeated description is omitted. A thermal print head of the embodiment is set to configured to be a thermal print head 100.
The configuration of the thermal print head 100 is described below.
The substrate 10 has a first main surface 10a and a second main surface 10b. The first main surface 10a and the second main surface 10b are end surfaces of the substrate 10 in the thickness direction. The second main surface 10b is a surface opposite to the first main surface 10a. In a plan view (observed from the side of the first main surface 10a along a normal direction of the first main surface 10a), a lengthwise direction of the substrate 10 is set as a first direction DR1. A direction perpendicular to the first direction DR1 in the plan view is set as a second direction DR2. Two ends of the substrate 10 in the second direction DR2 are respectively set as a first end 10c and a second end 10d.
The substrate 10 is formed of an insulating material. The substrate 10 is formed of, for example, ceramic. A material forming the substrate 10 is specifically, for example, aluminum oxide (Al2O3).
The glaze layer 20 is disposed on the substrate 10. More specifically, the glaze layer 20 is disposed on the first main surface 10a. The glaze layer 20 is formed of an insulating material. A material forming the glaze layer 20 is specifically, for example, glass.
The wiring layer 30 is disposed on the glaze layer 20. The wiring layer 30 includes a common electrode 31 and a plurality of individual electrodes 32.
The common electrode 31 includes a body 31a and a plurality of protrusions 31b. The body 31a extends along the first direction DR1. The body 31a is located on the side of the first end 10c in the second direction DR2. That is to say, a distance between the first end 10c and the body 31a in the second direction DR2 is less than a distance between the second end 10d and the body 31a in the second direction DR2.
The protrusions 31b protrude from an edge of the body 31a facing the side of the second end 10d along the second direction DR2. The plurality of protrusions 31b are arranged at intervals along the first direction DR1.
Each of the individual electrodes 32 includes a front end 32a on one end portion and a bonding pad 32b on the other end portion. The front end 32a is disposed between two adjacent protrusions 31b. That is to say, the protrusions 31b and the front ends 32a are alternately arranged in the first direction DR1. The front end 32a extends along the second direction DR2.
The plurality of bonding pads 32b are divided into a plurality of groups GP. Each GP includes a first bonding pad 32ba, a second bonding pad 32bb, a third bonding pad 32bc and a fourth bonding pad 32bd. A first group of the plurality of groups GP is set as a first group GP1. Another group of the plurality of groups GP that is adjacent to the first group GP1 in the first direction DR1 is set as a second group GP2.
The second bonding pad 32bb of the first group GP1 is located between a center of the first bonding pad 32ba of the first group GP1 and a center of the third bonding pad 32bc of the first group GP1 along the first direction DR1. The fourth bonding pad 32bd of the first group GP1 is located between the center of the third bonding pad 32bc of the first group GP1 and a center of the first bonding pad 32ba of the second group GP2 along the first direction DR1. From another perspective, the first bonding pad 32ba, the second bonding pad 32bb, the third bonding pad 32bc and the fourth bonding pad 32bd are sequentially arranged along the first direction DR1.
The third bonding pad 32bc is disposed between the first bonding pad 32ba and the fourth bonding pad 32bd and also between the second bonding pad 32bb and the fourth bonding pad 32bd in the second direction DR2. From another perspective, the plurality of first bonding pads 32ba are arranged to form one row (a first row) along the first direction DR1, the plurality of third bonding pads 32bc are arranged to form one row (a second row) along the first direction DR1, and the plurality of second bonding pads 32bb and the plurality of fourth bonding pads 32bd are arranged to form one row (a third row) along the first direction DR1. Moreover, the first row, the second row and the third row are arranged on positions shifted from one another in the second direction DR2.
The front end 32a and the bonding pad 32b are connected by a lead wiring portion 32c. The part of the lead wiring portion 32c connected to the bonding pad 32b extends from the bonding pad 32b along the second direction DR2.
A pitch P between two adjacent bonding pads 32b is set as a pitch P. The pitch P is a distance between a center of one bonding pad 32b in the first direction DR1 and a center of another bonding pad 32b adjacent to the one bonding pad 32b in the first direction DR1. The pitch P is preferably less than about 70 μm. The pitch P can also be less than about 60 μm. The pitch P is, for example, more than about 30 μm.
A thickness of the wiring layer 30 is set as a thickness T. The thickness T is preferably more than about 3 μm. The thickness T can also be more than about 4 μm. The thickness T is, for example, less than about 10 μm. The wiring layer 30 is formed of, for example, a material including silver (Ag). A material forming the wiring layer 30 is specifically, for example, a sintered body of silver particles. The material forming the wiring layer 30 can include copper (Cu) or can include gold (Au).
The heat generator 40 extends long the first direction DR1. The heat generator 40 is disposed on the glaze layer 20 while overlapping the protrusion 31b and the front end 32a. The heat generator 40 includes, for example, glass, and a plurality of conductive particles blended into the glass. The conductive particles are formed of, for example, ruthenium oxide (RuO2).
A common potential (for example, a ground potential) is applied to the common electrode 31. Although not shown, the bonding pad 32b is electrically connected to an external terminal (a bonding pad) of a driver integrated circuit (IC) by a bonding wire. Thus, a potential is selectively applied to each of the plurality of individual electrodes 32 by the driver IC. Thus, a current flow through the part of generator 40 between the front end 32a of the independent electrode 32 applied with the potential and the adjacent protrusion 31b, and the part resistively generates heat. Printing on paper is performed by transferring to the heat to the paper.
The protection glass 50 is disposed on the glaze layer 20 to cover the wiring layer 30 and the heat generator 40. Although not shown, the protection glass 50 has an opening portion, and the bonding pad 32b is exposed from the opening portion.
The method for manufacturing the thermal print head 100 is described below.
In the preparation step S1, the substrate 10 is prepared. The glaze layer forming step S2 is performed after the preparation step S1.
The metal layer forming step S3 is performed after the glaze layer forming step S2.
The metal layer patterning step S4 is performed after the metal layer forming step S3.
The heat generator forming step S5 is performed after the metal layer patterning step S4.
The protection glass forming step S6 is performed after the heat generator forming step S5.
The single-chip step S7 is performed after the protection glass forming step S6. In the single-chip step S7, single-chip is performed by irradiating with such as laser to cut the substrate 10, the glaze layer 20 and the protection glass 50 to form a plurality of thermal print heads 100. With the above, the thermal print head 100 having the structure shown in
Compared to a thermal print head of a comparison example, the effects of the thermal print head 100 are described below. The thermal print head of the comparison example is set as a thermal print head 100A.
In the thermal print head 100A, the second bonding pad 32bb and the fourth bonding pad 32bd are disposed in opposite in the first direction DR1, and the lead wiring portion 32c connected to the third bonding pad 32c passes through between the second bonding pad 32bb and the fourth bonding pad 32bd. Thus, in the thermal print head 100A, if the pitch of the bonding pad 32b is narrowed (that is, the pitch P is reduced), a width of the lead wiring portion 32c is inevitably reduced.
As described above, the wiring layer 30 is formed by performing wet etching on the metal layer 33 in the metal layer patterning step S4. Because the wet etching is performed isotropically, the lead wiring portion 32c is thinned if the width of the lead wiring portion 32c is reduced, such that the lead wiring portion 32c can break sometimes. Thus, it is difficult to reduce the pitch P according to the thermal print head 100A.
On the other hand, in the thermal print head 100, the lead wiring portion 32c connected to the second bonding pad 32bb of the first group GP passes through between the first bonding pad 32ba of the first group GP1 and the third bonding pad 32bc of the first group GP1, and the lead wiring portion 32c connected to the fourth bonding pad 32bd of the first group GP1 passes through between the third bonding pad 32bc of the first group GP1 and the first bonding pad 32ba of the second group GP2.
However, in the thermal print head 100, the first bonding pad 32ba of the first group GP1 and the third bonding pad 32bc of the first group GP1 are not disposed in opposite in the first direction DR1, and the third bonding pad 32bc of the first group GP1 and the first bonding pad 32ba of the second group GP2 are not disposed in opposite in the first direction DR1. Thus, in the thermal print head 100, the lead wiring portion 32c does not pass through between two bonding pads 32b disposed in opposite in the first direction DR1, and so the width of the lead wiring portion 32c can be ensured even if the pitch P is reduced. For example, in the thermal print head 100, the lead wiring portion 32c can be extended to regions indicated by the dotted lines in
The number of bits of outputs of current driver ICs is mostly a multiple of 4 (64-bit, or 128-bit). In the thermal print head, since four bonding pads 32b are arranged as one cycle, current driver ICs can be easily handled.
When the wiring layer 30 is formed of silver, compared to when the wiring layer 30 is formed of gold, the thickness T is sometimes increased. When the thickness T is increased, the amount of etching in a horizontal direction (a direction perpendicular to a thickness direction of the metal layer 33) in wet etching in the metal layer patterning step S4 is increased, and the lead wiring portion 32c can be thinned easily. In the thermal print head 100, because the width of the lead wiring portion 32c can be ensured, narrowing of the pitch between the bonding pads 32b can be achieved even if the thickness T is increased. Moreover, by forming the wiring layer 30 by silver, compared to when the wiring layer 30 is formed of gold, manufacturing costs of the thermal print head 100 can be reduced.
In the description above, although an example in which four bonding pads 32b are used as a group and such group is periodically arranged along the first direction DR1, and the plurality of bonding pads 32b are arranged into three rows along the first direction DR1, the arrangement of the plurality of bonding pads 32b is not limited such example. If the lead wiring portion 32c does not pass through between two bonding pads 32b disposed in opposite in the first direction DR1, a group including five or more bonding pads 32b can also be arranged periodically along the first direction, and the plurality of bonding pads 32b can also be arranged in four or more rows along the first direction DR1. However, as shown in the example in
The embodiments include the following configurations.
A thermal print head, comprising:
The thermal print head according to note 1, wherein a thickness of the wiring layer is between about 3 μm and about 10 μm.
The thermal print head according to note 1 or 2, wherein a pitch between two adjacent bonding pads of the plurality of bonding pads along the first direction is between about 30 μm and about 70 μm.
The thermal print head according any one of notes 1 to 3, wherein a material of the wiring layer comprises silver.
Embodiments of the disclosure are as described above; however, various modification may be made to the embodiments. Moreover, the disclosure is not limited to the embodiments described above. The scope of the present disclosure is represented by way of the claims, and is intended to cover all equivalent meanings and variations made within the scope accorded with the claims.
Number | Date | Country | Kind |
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2023-026920 | Feb 2023 | JP | national |