Claims
- 1. A thermal recording head comprising a substrate and at least one set of a heat-generating resistance layer and at least one pair of electrodes connected to said heat-generating resistance layer, said set being formed on said substrate, wherein said heat-generating resistance layer comprises an amorphous material containing halogen atoms and hydrogen atoms in a matrix of carbon atoms, wherein at least one of halogen atoms and hydrogen atoms are distributed nonuniformly everywhere throughout the film thickness direction in said amorphous material.
- 2. A thermal recording head according to claim 1, wherein said amorphous material further contains silicon atoms.
- 3. A thermal recording head according to claim 1, wherein said amorphous material further contains germanium atoms.
- 4. A thermal recording head according to claim 1, wherein said amorphous material further contains a substance for controlling electroconductivity.
- 5. A thermal recording head according to claim 2, wherein said amorphous material further contains germanium atoms.
- 6. A thermal recording head according to claim 2, wherein said from silicon atoms are distributed nonuniformly in the film thickness direction in said amorphous material.
- 7. A thermal recording head according to claim 3, wherein said germanium atoms are distributed nonuniformly in the film thickness direction in said amorphous material.
- 8. A thermal recording head according to claim 4, wherein said substance for controlling electroconductivity is distributed nonuniformly in the film thickness direction and in said amorphous material.
- 9. A thermal recording head according to claim 5, wherein said germanium atoms are distributed nonuniformly in the film thickness in said amorphous material.
- 10. A thermal recording head according to claim 2, wherein said amorphous material further contains a substance for controlling electroconductivity.
- 11. A thermal recording head according to claim 3, wherein said amorphous material further contains a substance for controlling electroconductivity.
- 12. A thermal recording head according to claim 5, wherein said amorphous material further contains a substance for controlling electroconductivity.
- 13. A thermal recording head according to any one of claims, 1-5 and 6-12, wherein the content of halogen atoms in the amorphous material is 0.0001 to 30 atomic %.
- 14. A thermal recording head according to any one of claims 1-5 and 6-12, wherein the content of hydrogen atoms in the amorphous material is 0.0001 to 30 atomic %.
- 15. A thermal recording head according to any one of claims, 1-5 and 6-12, wherein the sum of the content of halogen atoms and the content of hydrogen atoms in the amorphous material is 0.0001 to 40 atomic %.
- 16. A thermal recording head according to any one of claims, 1-5 and 6-12, wherein the halogen atoms are F or Cl.
- 17. A thermal recording head according to any one of claims 1-5 and 6-12, wherein the substrate has a surface layer comprising an amorphous material of a matrix of carbon atoms on the side on which the heat-generating resistance layer is formed.
- 18. A thermal recording head according to any one of claims 2, 5, 6, 9, 10 and 12, wherein the content of silicon atoms in the amorphous material is 0.0001 to 40 atomic %.
- 19. A thermal recording head according to any one of claims 2, 6 and 10, wherein the sum of the content of silicon atoms, the content of halogen atoms and the content of hydrogen atoms in the amorphous material is 0.0001 to 40 atomic %.
- 20. A thermal recording head according to any one of claims 3, 5, 7, 9, 11 and 12, wherein the content of germanium atoms in the amorphous material is 0.0001 to 40 atomic %.
- 21. A thermal recording head according to any one of claims 3, 7 and 11, wherein the sum of the content of germanium atoms, the content of halogen atoms and the content of hydrogen atoms in the amorphous material is 0.0001 to 40 atomic %.
- 22. A thermal recording head according to any one of claims 4, 8, 10, 11 and 12, wherein the content of the substance for controlling electroconductivity is 0.01 to 50000 atomic ppm in the amorphous material.
- 23. A thermal recording head according to any one of claims 4, 8, 10, 11 and 12, wherein the substance for controlling electroconductivity is an atom belonging to group III of the periodic table of elements.
- 24. A thermal recording head according to any one of claims 4, 8, 10, 11 and 12, wherein the substance for controlling electroconductivity is an atom belonging to group V of the periodic table of elements.
- 25. A thermal recording head according to any one of claims 5, 9 and 12, wherein the sum of the content of silicon atoms, the content of germanium atoms, the content of halogen atoms and the content of hydrogen atoms in the amorphous material 0.0001 to 40 atomic %.
- 26. A thermal recording head according to claim 10, wherein the silicon atoms, and substances for controlling electroconductivity are distributed nonuniformly in the film thickness direction in said heat-generating resistance layer.
- 27. A thermal recording head according to claim 11, wherein the germanium atoms, and substances for controlling electroconductivity are distributed nonuniformly in the film thickness direction in said heat-generating resistance layer.
- 28. A thermal recording head according to claim 12, wherein the substance selected from silicon atoms, germanium atoms, and substances for controlling electroconductivity are distributed nonuniformly in the film thickness direction in said heat-generating resistance layer.
- 29. A thermal recording head according to any one of claims 26 to 28, wherein the content of halogen atoms in the amorphous material is 0.0001 to 30 atomic %.
- 30. A thermal recording head according to any one of claims 26 to 28, wherein the content of hydrogen atoms in the amorphous material is 0.0001 to 30 atomic %.
- 31. A thermal recording head according to any one of claims 26 to 28, wherein the sum of the content of halogen atoms and the content of hydrogen atoms in the amorphous material is 0.0001 to 40 atomic %.
- 32. A thermal recording head according to any one of claims 26 to 28, wherein the halogen atoms are F or Cl.
- 33. A thermal recording head according to any one of claims 26 to 28, wherein the substrate has a surface layer comprising an amorphous material of a matrix of carbon atoms on the side on which the heat-generating resistance layer is formed.
- 34. A thermal recording head according to any one of claims 26 and 28, wherein the content of silicon atoms in the amorphous material is 0.0001 to 40 atomic %.
- 35. A thermal recording head according to claim 26, wherein the sum of the content of silicon atoms, the content of halogen atoms and the content, of hydrogen atoms in the amorphous material is 0.0001 to 40 atomic %.
- 36. A thermal recording head according to any one of claims 27 and 28, wherein the content of germanium atoms in the amorphous material is 0.0001 to 40 atomic %.
- 37. A thermal recording head according to claim 27, wherein the sum of the content of germanium atoms, the content of halogen atoms and the content of hydrogen atoms in the amorphous material is 0.0001 to 40 atomic %.
- 38. A thermal recording head according to any one of claims 26 to 28, wherein the content of the substance for controlling electroconductivity is 0.01 to 50,000 atomic ppm in the amorphous material.
- 39. A thermal recording head according to any one of claims 26 to 28, wherein the substance for controlling electroconductivity is an atom belonging to group III of the periodic table of elements.
- 40. A thermal recording head according to any one of claims 26 to 28, wherein the substance for controlling electroconductivity is an atom belonging to the group V of the periodic table of elements.
- 41. A thermal recording head according to claim 28, wherein the sum of the content of silicon atoms, the content of germanium atoms, the content of halogen atoms and the content of hydrogen atoms in the amorphous material is 0.0001 to 40 atomic %.
- 42. A thermal recording head according to any one of claims 6 to 9 and 26 to 28, wherein halogen atoms and/or hydrogen atoms are distributed as enriched on the substrate side.
- 43. A thermal recording head according to any one of claims 6, 8, 26 and 28, wherein silicon atoms are distributed as enriched on the substrate side.
- 44. A thermal recording head according to any one of claims 7, 9, 27 and 28, wherein germanium atoms are distributed as enriched on the substrate side.
- 45. A thermal recording head according to any one of claims 8 and 26 to 28, wherein the substance for controlling electroconductivity is distributed as enriched on the substrate side.
- 46. A thermal; recording head according to any one of claim 6 to 9 and 26 to 28, wherein halogen atoms and/or hydrogen atoms are distributed as depleted on the substrate side.
- 47. A thermal recording head according to any one of claims 6, 9, 26 and 28, wherein silicon atoms are distributed as depleted on the substrate side.
- 48. A thermal recording head according to any one of claims 7, 9, 27 and 28, wherein germanium atoms are distributed as depleted on the substrate side.
- 49. A thermal recording head according to any one of claims 8 and 26 to 28, wherein the substance for controlling electroconductivity is distributed as depleted on the substrate side.
- 50. A thermal recording head according to any one of claims 6 to 9 and 26 to 28, wherein halogen atoms and/or hydrogen atoms are distributed as enriched around the center of the layer thickness.
- 51. A thermal recording head according to any one of claims 6, 9, 26 and 28, wherein silicon atoms are distributed as enriched around the center of the layer thickness.
- 52. A thermal recording head according to any one of claims 7, 9, 27 and 28, wherein germanium atoms are distributed as enriched around the center of the layer thickness.
- 53. A thermal recording head according to any one of claims 8 and 26 to 28, wherein the substance for controlling electroconductivity is distributed as enriched around the center of the layer thickness.
Priority Claims (10)
Number |
Date |
Country |
Kind |
60-58529 |
Mar 1985 |
JPX |
|
60-59388 |
Mar 1985 |
JPX |
|
60-59389 |
Mar 1985 |
JPX |
|
60-59390 |
Mar 1985 |
JPX |
|
60-59391 |
Mar 1985 |
JPX |
|
60-60535 |
Mar 1985 |
JPX |
|
60-60536 |
Mar 1985 |
JPX |
|
60-60537 |
Mar 1985 |
JPX |
|
60-60538 |
Mar 1985 |
JPX |
|
60-62085 |
Mar 1985 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 842,242, filed Mar. 21, 1986, now abandoned
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Foreign Referenced Citations (11)
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0071082 |
Feb 1983 |
EPX |
3411702 |
Oct 1984 |
DEX |
3316182 |
Nov 1984 |
DEX |
3041420 |
Jan 1985 |
DEX |
56-49521 |
May 1981 |
JPX |
58-42472 |
Jul 1983 |
JPX |
58-42473 |
Oct 1983 |
JPX |
1410876 |
Oct 1975 |
GBX |
1582231 |
Jan 1981 |
GBX |
2083841 |
Mar 1982 |
GBX |
2109012 |
May 1983 |
GBX |
Continuations (1)
|
Number |
Date |
Country |
Parent |
842242 |
Mar 1986 |
|