This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2014-057235, filed Mar. 19, 2014; the entire contents of which are incorporated herein by reference.
Embodiments described herein relate to a thermoelectric converting element.
As one of thermoelectric converting elements, there has been known a thermoelectric converting element using a spin Seebeck effect. The thermoelectric converting element gains electromotive force in a condition that an external magnetic field is applied to the thermoelectric converting element. However, for a practical purpose, the thermoelectric converting element should be usable without using the external magnetic field.
Hereinafter, with reference to the accompanying drawings, embodiments will be described. What is given the same reference numeral indicates the same component. It is noted that the drawings are schematic or conceptual and that a relationship between a thickness and a width of each portion and a ratio coefficient of sizes between the portions are not necessarily the same as those of actual things. Moreover, even when the same portion is shown, there is also a case where it is shown with different sizes and ratio coefficients depending on the drawings.
An operating principle of the thermoelectric converting element 100 will be explained. The thermoelectric converting element 100 can generate electricity by using the spin Seebeck effect.
If a temperature gradient ΔT is applied to the insulated ferromagnetic layer 20 between the substrate 10 and the nonmagnetic metal layer 40, there occurs a difference between a distribution of up spin electrons and down spin electrons in the insulated ferromagnetic layer 20. This phenomenon is referred to as the spin Seebeck effect, and this occasional difference between the distribution of up spin electrons and the distribution of down spin electrons is referred to as a spin pressure. The spin pressure that arises in the insulated ferromagnetic layer 20 propagates into the nonmagnetic metal layer 40. A spin current is a flow that arises from the difference between the distribution of up spin electrons and the distribution of down spin electrons, and is not a flow of electric charges. When the spin current propagates into the nonmagnetic metal layer 40, an inverse spin Hall effect causes an electric current, which is a flow of electric charges, to flow in a direction perpendicular to the spin current and a magnetization 25 of the insulated ferromagnetic layer 20, which generates an electromotive force. By this, the thermoelectric converting element 100 generates electricity.
The substrate 10 and the insulated ferromagnetic layer 20 can make contact: with one another. The insulated ferromagnetic layer 20 and the nonmagnetic metal layer 40 can make contact with one another. That respective layers adjoin other layers in this way can enable the spin current to propagate into the nonmagnetic metal layer 40.
A flexible substrate is used for the substrate 10 in order to enable generating electricity on a comparatively large area by making use of every heat generation surface. The substrate 10 preferably has flexibility with a Young's modulus being less than or equal to 10. Polyimide, polypropylene, nylon, polyester, parylene, a rubber, a biaxially stretched polyethylene-2,6-naphthalate, or a modified polyamide may be used for the substrate 10. In the case where there is no need for flexibility for the substrate 10, Si, glass, or sapphire can be used for the substrate 10. In the case where the insulated ferromagnetic layer 20 has at least 1 μm thickness, the thermoelectric converting element 100 does not need to use the substrate 10.
A material having a large spin Hall angle θSH suitable for the nonmagnetic metal layer 40. Pt, Ta, or W can be used for the nonmagnetic metal layer 40. Ta having a cubic crystal structure is preferable. This is because the electrical resistivity of the cubic Ta is lower than amorphous Ta. Moreover, tetragonal Ta is further preferable. This is because it has a larger spin Hall angle. Tetragonal Ta is referred to herein β-Ta. When W is used for the nonmagnetic metal layer 40, β-W having the tetragonal crystal structure is preferable. Adding at least one element selected from a group consisting of Hf, W, Ir, Pt, Au, Pb, and Bi to the nonmagnetic metal layer 40 containing Ta will further raise the electromotive force. Similarly, adding at least one element selected from a group consisting of Hf, Ta, Ir, Pt, Au, Pb, and Bi to the nonmagnetic metal layer 40 containing W will further raise the electromotive force. These elements are added to the nonmagnetic metal layer 40 by not less than 3 at % and not more than 30 at %. Each of these elements has a function of increasing a spin orbit interaction in the nonmagnetic metal layer 40 and increasing the spin Hall angle θSH. For this reason, adding at least one of the elements improves an efficiency of generating the thermoelectric converting element 100
Moreover, at least one element selected from a group consisting of Fe, Co, Ni, Mn, and Cr may be added to the nonmagnetic metal layer 40 containing Pt, Ta or W. These elements are added to the nonmagnetic metal layer 40 by not more than 1 at %. These elements may be added thereto together with another element such as Hf, W, Ta, Ir, Pt, Au, Pb, and/or Bi described above. Since these elements are small in quantity, the nonmagnetic metal layer 40 still remains nonmagnetic as a whole. Since these elements are localized in the nonmagnetic metal layer 40, each of them has a function of increasing the spin orbit interaction and increasing the spin Hall angle θSH. For this reason, the efficiency of generating the thermoelectric converting element 100 improves. Since the nonmagnetic metal layer 40 detects the spin current, it is also called as a spin current detecting layer.
As shown in
A direction of the electromotive force will be explained. The electromotive force is generated in a direction of a cross product between a direction of the magnetization 25 of the insulated ferromagnetic layer 20 and a direction of temperature difference, which is a direction of the spin current. In order to detect the electromotive force from the terminals 50, 60, the magnetization 25 of the insulated ferromagnetic layer 20 is fixed in a direction perpendicular to the direction of temperature difference.
As mentioned above, in order to detect the electromotive force efficiently toward the temperature difference, the single magnetic domain being in the direction perpendicular to the direction connecting from the terminal 50 to terminal 60 can be used for the magnetization 25 of the insulated ferromagnetic layer 20.
As shown in
However, in the case where the thermoelectric converting element is used as a power generation element, it is difficult to continuously applying the external magnetic field can be continuingly applied to the thermoelectric converting element. Even if the external magnetic field to the thermoelectric element can be realized, the formation of the power generation element is limited and it will be difficult for the power generation element to be applied to several kinds of applications.
To resolve this, a hard magnetic material is used for the insulated ferromagnetic layer 20.
An oxide including mainly Fe and at least one element selected from a group of Sr, La, Co, Zn, and Ba can be used for the hard magnetic material. The oxide including mainly Fe means that the hard magnetic material includes Fe not less than 25% at and oxygen not less than 55% at. SrFe12O19, LaFe12O19, LaCo(x)Fe(12-x)O19 (0<x<2), Sr(y)La(1-y)Co(x)Fe(12-x)O19 (0<x<2, 0<y<1), Sr(y)La(1-y)Zn(x)Fe(12-x)O19 (0<x<2, 0<y<1), CoFe2O4, or Ni(x)Zn(1-x)Fe2O4 (0<x<1) can be used for the insulated ferromagnetic layer 20.
Table 1 shows coercive force of some magnetic materials formed on a thermal silicon oxide substrate. A composition shown in
Thermoelectric converting elements were fabricated by use of magnetic materials of the comparative example 1 and the working examples 1-3 for the insulating ferromagnetic layer. Table 2 shows the results of detecting spin Seebeck effect of these thermoelectric converting elements without applying the external magnetic field to these thermoelectric converting elements.
In the spin Seebeck effect, the electromotive force is divided by a distance between the two terminals (28 mm), and the electromotive force in a unit length and a unit temperature is described as the spin Seebeck coefficient because the distance between the two terminals formed on the nonmagnetic metal layer is proportional to the electromotive force.
From the above results, the inventors found that it was effective for the insulated ferromagnetic layer 20 to use the hard magnetic material having the coercive force not less than 300 Oe in order to obtain large electromotive force stably.
Thermoelectric converting elements were fabricated as working examples 4-6. The composition of the thermoelectric converting element 100 was used for the working examples 4 and 5.
A composition of the ferrite used for the insulated ferromagnetic layer 20 was changed. The insulated ferromagnetic layer 20 provided with a 200 nm thickness and having a magneto-plumbite hexagonal crystal structure such as CoFe2O4, Sr—Fe—O, La—Fe—O, La—Co—Fe—O, Sr—La—Co—Fe—O, Sr—La—Zn—Fe—O or like was formed on a thermal silicon oxide substrate. The insulated ferromagnetic layer 20 consisting of CoFe204 having a spinel crystal structure was formed on the thermal silicon oxide substrate. These insulated ferromagnetic layers 20 showed high coercive force from 2500 Oe to 4000 Oe because these structures have the composition of a ferrite magnet. For this reason, the electromotive force being a high-resistance property for magnetic noise and stability could be generated.
The thickness of the insulated ferromagnetic layer 20 was changed.
A 10 nm and 20 nm thickness of Ni—Zn—Fe—O used for the insulated ferromagnetic layer 20 were fabricated.
A coercive force of the 10 nm thickness of the insulated ferromagnetic layer 20 was 300 Oe, and a coercive force of the 20 nm thickness of the insulated ferromagnetic layer 20 was 320 Oe.
Next, the thickness of the insulated ferromagnetic layer 20 was set to 20 nm, and the composition of the insulated ferromagnetic layer 20 was changed. For each, the coercive force was 1100 Oe for Sr—Fe—O, 1150 for La—Fe—O, 1500 Oe for La—Co—Fe—O, 1460 Oe for Sr—La—Co—Fe—O, 1130 Oe for Sr—La—Zn—Fe—O, and 1340 Oe for CoFe2O4. In this working example, the electromotive force could be sufficiently generated.
The composition of the insulated ferromagnetic layer 20 was changed. As shown in
The method of fabricating the insulated ferromagnetic layer 20 is explained next. The magneto-plumbite hexagonal crystal structure or the spinel crystal structure can be fabricated by setting the temperature at 200 degree Celsius−500 degree Celsius during heating of the substrate 10. At this time, the insulated ferromagnetic layer 20 has a coercive force not less than 300 Oe.
A vacuum deposition method, non-electrolytic plating method, and a method that smashes a sintered compact with ball milling and mixes the smashed sintered compact into solvent and applies it to the substrate can be used for fabricating the insulated ferromagnetic layer 20. After fabricating the insulated ferromagnetic layer 20, the magneto-plumbite hexagonal crystal structure can be obtained after heating the insulated ferromagnetic layer 20 at not less than 700 degree Celsius and not more than 1200 degree Celsius. The spinel crystal structure can be obtained after heating the insulated ferromagnetic layer 20 at not less than 100 degree Celsius and not more than 350 degree Celsius. At this time, the insulated ferromagnetic layer 20 has a coercive force not less than 300 Oe.
A magnetic field larger than the coercive force of the insulated ferromagnetic layer 20 is applied to the insulated ferromagnetic layer 20 in order to obtain the insulated ferromagnetic layer 20 having a single magnetic domain. If the coercive force of the insulated ferromagnetic layer 20 is 300 Oe, the insulated ferromagnetic layer 20 can have the single magnetic domain by applying an external magnetic field of not less than 1000 Oe to the insulated ferromagnetic layer 20. If the external magnetic field is not less than 5000 Oe, the insulated ferromagnetic layer 20 can have the single magnetic domain more easily. A pulse magnetic field which applies a magnetic field for a short time can be used for the external magnetic field.
Although the exemplary embodiments of the present invention have been described above, these embodiments are presented just as examples, and it is not intended to limit a range of the invention. New embodiments may be carried out with other various modes, and a variety of omissions, replacements, and modifications may be made within a range that does not deviate from the invention. These embodiments and their modifications are included in the scope of the claims of the invention and them equivalents.
Number | Date | Country | Kind |
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2014-057235 | Mar 2014 | JP | national |