Patent Application
20220320406
The present invention relates to a thermoelectric device, and more specifically, to a substrate and an insulating layer of a thermoelectric device.
A thermoelectric effect is a phenomenon occurring due to movement of electrons and holes in a material, and the thermoelectric effect means direct energy conversion between heat and electricity.
A thermoelectric device is a generic term for devices using a thermoelectric effect and has a structure in which P-type thermoelectric legs and N-type thermoelectric legs are bonded between metal electrodes to form PN junction pairs.
Thermoelectric devices may be divided into devices using a change in electrical resistance according to a change in temperature, devices using the Seebeck effect in which an electromotive force is generated due to a difference in temperature, devices using the Peltier effect in which heat absorption or heating occurs due to a current, and the like.
The thermoelectric devices have been variously applied to home appliances, electronic components, communication components, and the like. For example, the thermoelectric devices may be applied to cooling apparatuses, heating apparatuses, power generation apparatuses, and the like. Therefore, the demand for thermoelectric performance of the thermoelectric device is gradually increasing.
A thermoelectric device includes substrates, electrodes, and thermoelectric legs, a plurality of thermoelectric legs are disposed between an upper substrate and a lower substrate, a plurality of upper electrodes are disposed between the plurality of thermoelectric legs and the upper substrate, and a plurality of lower electrodes are disposed between the plurality of thermoelectric legs and the lower substrate.
In order to improve the heat transfer performance of the thermoelectric device, attempts to use a metal substrate are increasing.
Generally, a thermoelectric device may be manufactured through a process of sequentially depositing a resin layer, electrodes, and thermoelectric legs on a prepared metal substrate. When the metal substrate is used, although an advantageous effect may be obtained in terms of heat conduction, there is a problem in that reliability is degraded due to a low withstand voltage when used for a long time.
In order to solve the problem, although there is an attempt to increase the withstand voltage by oxidizing a surface of the metal substrate, since a heat sink should be bonded to the substrate at a high temperature portion side, there is a problem in that it is difficult to bond the oxidized metal substrate and the heat sink.
Accordingly, a thermoelectric device with improved not only heat conduction performance but also withstand voltage performance and bonding performance of a heat sink is required.
The present invention is directed to providing a structure of a substrate and an insulating layer of a thermoelectric device with improved all heat conduction performance, withstand voltage performance, and bonding performance of a heat sink.
One aspect of the present invention provides a thermoelectric device including a first insulating layer, a first substrate disposed on the first insulating layer, a second insulating layer disposed on the first substrate, a first electrode disposed on the second insulating layer, a P-type thermoelectric leg and an N-type thermoelectric leg disposed on the first electrode, a second electrode disposed on the P-type thermoelectric leg and the N-type thermoelectric leg, a third insulating layer disposed on the second electrode, and a second substrate disposed on the third insulating layer, wherein the first insulating layer includes a first aluminum oxide layer, the first substrate is an aluminum substrate, the second substrate is a copper substrate, the first substrate is a low temperature portion, and the second substrate is a high temperature portion.
Each of the second insulating layer and the third insulating layer may be formed as a resin layer including at least one of an epoxy resin composition and a silicone resin composition.
A thickness of the second insulating layer may be equal to a thickness of the third insulating layer or smaller than the thickness of the third insulating layer.
The second insulating layer may include a second aluminum oxide layer, and the third insulating layer may include a resin layer including at least one of an epoxy resin composition and a silicone resin composition.
The second insulating layer may further include a resin layer disposed on the second aluminum oxide layer and including at least one of an epoxy resin composition and a silicone resin composition.
A thickness of the resin layer included in the second insulating layer may be smaller than each of a thickness of the second aluminum oxide layer and a thickness of the third insulating layer.
At least one of the first aluminum oxide layer and the second aluminum oxide layer may be formed by anodizing the aluminum substrate.
At least one of the first aluminum oxide layer and the second aluminum oxide layer may extend along a side surface of the aluminum substrate and may be connected to the other one thereof.
A sum of a thickness of the first insulating layer and a thickness of the second insulating layer may be 80 μm or more.
The thermoelectric device may further include a heat sink disposed on the copper substrate.
An oxide layer may not be disposed between the copper substrate and the heat sink.
According to the embodiment of the present invention, a thermoelectric device having high performance and high reliability can be obtained. Particularly, according to the embodiment of the present invention, a thermoelectric device with improved not only heat conduction performance but also withstand voltage performance and bonding performance with a heat sink can be obtained.
In addition, according to the embodiment of the present invention, a thermoelectric device, which satisfies a difference in performance between a low temperature portion and a high temperature portion, can be obtained.
The thermoelectric device according to the embodiment of the present invention can be applied to not only applications formed in small sizes but also applications formed in large sizes, such as vehicles, ships, steel mills, incinerators, and the like.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
However, the technical spirit of the present invention is not limited to some embodiments which will be described and may be realized using various other embodiments, and at least one component of the embodiments may be selectively coupled, substituted, and used within the range of the technical spirit.
In addition, unless clearly and specifically defined otherwise by context, all terms (including technical and scientific terms) used herein can be interpreted as having customary meanings to those skilled in the art, and meanings of generally used terms, such as those defined in commonly used dictionaries, will be interpreted by considering contextual meanings of the related technology.
In addition, the terms used in the embodiments of the present invention are considered in a descriptive sense and not for limiting the present invention.
In the present specification, unless clearly indicated otherwise by the context, singular forms include the plural forms thereof, and in a case in which “at least one (or one or more) among A, B, and C” is described, this may include at least one combination among all possible combinations of A, B, and C.
In addition, in descriptions of components of the present invention, terms such as “first,” “second,” “A,” “B,” “(a),” and “(b)” can be used.
The terms are only to distinguish one element from another element, and an essence, order, and the like of the element are not limited by the terms.
In addition, it should be understood that, when an element is referred to as being “connected or coupled” to another element, such a description may include both a case in which the element is directly connected or coupled to another element and a case in which the element is connected or coupled to another element with still another element disposed therebetween.
In addition, in a case in which any one element is described as being formed or disposed “on or under” another element, such a description includes both a case in which the two elements are formed or disposed in direct contact with each other and a case in which one or more other elements are disposed between the two elements. In addition, when one element is described as being disposed “on or under” another element, such a description may include a case in which the one element is disposed at an upper side or a lower side with respect to another element.
Referring to
The lower electrodes 120 are disposed between the lower substrate 110 and lower surfaces of the P-type thermoelectric legs 130 and the N-type thermoelectric legs 140, and the upper electrodes 150 are disposed between the upper substrate 160 and upper surfaces of the P-type thermoelectric legs 130 and the N-type thermoelectric legs 140. Accordingly, the plurality of P-type thermoelectric legs 130 and the plurality of N-type thermoelectric legs 140 are electrically connected through the lower electrodes 120 and the upper electrodes 150. A pair of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 disposed between the lower electrodes 120 and the upper electrode 150 and electrically connected to each other may form a unit cell.
For example, when a voltage is applied to the lower electrodes 120 and the upper electrodes 150 through lead wires 181 and 182, due to the Peltier effect, the substrate, through which a current flows from the P-type thermoelectric leg 130 to the N-type thermoelectric leg 140, may absorb heat to serve as a cooling portion, and the substrate, through which a current flows from the N-type thermoelectric leg 140 to the P-type thermoelectric leg 130, may be heated to serve as a heating portion. Alternatively, when a temperature difference is applied between the lower electrode 120 and the upper electrode 150, due to the Seebeck effect, electric charges may be moved through the P-type thermoelectric legs 130 and the N-type thermoelectric leg 140 so that electricity may be generated.
In this case, each of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be a bismuth-telluride (Bi—Te)-based thermoelectric leg mainly including Bi and Te. The P-type thermoelectric leg 130 may be the Bi—Te-based thermoelectric leg including at least one among antimony (Sb), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium (Ga), Te, Bi, and indium (In). For example, the P-type thermoelectric leg 130 may include Bi—Sb—Te, which is a main material, at 99 to 99.999 wt % and at least one among Ni, Al, Cu, Ag, Pb, B, Ga, and In at 0.001 to 1 wt % based on a total weight of 100 wt %. The N-type thermoelectric leg 140 may be the Bi—Te-based thermoelectric leg including at least one among Se, Ni, Cu, Ag, Pb, B, Ga, Te, Bi, and In. For example, the N-type thermoelectric leg 140 may include Bi—Se—Te, which is a main material, at 99 to 99.999 wt % and at least one among Ni, Al, Cu, Ag, Pb, B, Ga, and In at 0.001 to 1 wt % based on a total weight of 100 wt %.
Each of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be formed in a bulk type or stack type. Generally, the bulk type P-type thermoelectric leg 130 or the bulk type N-type thermoelectric leg 140 may be formed through a process in which a thermoelectric material is heat-treated to manufacture an ingot, the ingot is grinded and strained to obtain a powder for a thermoelectric leg, the powder is sintered, and a sintered body is cut. In this case, each of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be a polycrystalline thermoelectric leg. When the powder for the thermoelectric leg is sintered in order to manufacture the polycrystalline thermoelectric leg, the powder may be compressed at 100 MPa to 200 MPa. For example, when the P-type thermoelectric leg 130 is sintered, the powder for the thermoelectric leg may be sintered at 100 to 150 MPa, preferably at 110 to 140 MPa, and more preferably at 120 to 130 MPa. In addition, when the N-type thermoelectric leg 130 is sintered, the powder for the thermoelectric leg may be sintered at 150 to 200 MPa, preferably at 160 to 195 MPa, and more preferably at 170 to 190 MPa. As described above, when each of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 is the polycrystalline thermoelectric leg, strength of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may increase. The stack type P-type thermoelectric leg 130 or the stack type N-type thermoelectric leg 140 may be formed in a process in which a paste containing a thermoelectric material is applied on base members each having a sheet shape to form unit members, and the unit members are stacked and cut.
In this case, the pair of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may have the same shape and volume or may have different shapes and volumes. For example, since electrical conduction properties of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 are different, a height or cross sectional area of the N-type thermoelectric leg 140 may be different from that of the P-type thermoelectric leg 130.
In this case, the P-type thermoelectric leg 130 or N-type thermoelectric leg 140 may have a cylindrical shape, a polygonal column shape, an elliptical column shape, or the like.
Alternatively, the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may also have a stack type structure. For example, the P-type thermoelectric leg of the N-type thermoelectric leg may be formed using a method in which a plurality of structures, in which a semiconductor material is applied on base members each having a sheet shape, are stacked and cut. Accordingly, material loss may be inhibited and an electrical conduction property may be improved. The structures may further include conductive layers having opening patterns, and accordingly, an adhesive force between the structures increases, heat conductivity may decrease, and electric conductivity may increase.
Alternatively, the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may be formed so that cross sectional areas are different in one thermoelectric leg. For example, in one thermoelectric leg, cross sectional areas of both end portions disposed toward electrodes are greater than a cross sectional area between the both end portions. Accordingly, since a temperature difference between both end portions may be large, thermoelectric efficiency can be improved.
The performance of the thermoelectric device according to one embodiment of the present invention may be expressed as a thermoelectric performance figure of merit (ZT). The thermoelectric performance figure of merit (ZT) may be expressed by Equation 1.
ZT=α
2
·σ·T/k [Equation 1]
Here, α denotes the Seebeck coefficient [V/K], σ denotes electric conductivity [S/m], and α2·α denotes a power factor [W/mK2]. In addition, T denotes temperature, and k denotes thermal conductivity [W/mK]. k may be expressed as a·cp·ρ, where a denotes thermal diffusivity [cm2/S], cp denotes specific heat [J/gK], and ρ denotes density [g/cm3].
In order to obtain the thermoelectric performance figure of merit (ZT) of a thermoelectric device, a Z value (V/K) is measured using a Z meter, and thus the thermoelectric performance figure of merit (ZT) may be calculated using the measured Z value.
In this case, each of the lower electrodes 120 disposed between the lower substrate 110 and the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 and the upper electrodes 150 disposed between the upper substrate 160 and the P-type thermoelectric leg 130 and N-type thermoelectric leg 140 may include at least one among Cu, Ag, Al, and Ni and may have a thickness of 0.01 mm to 0.3 mm. When the thickness of the lower electrode 120 or the upper electrode 150 is less than 0.01 mm, an electrode function thereof is degraded such that electric conductivity performance thereof may be lowered, and when the thickness thereof is greater than 0.3 mm, resistance thereof increases so that conduction efficiency thereof may be lowered.
In addition, the lower substrate 110 and the upper substrate 160 may be metal substrates opposite to each other, and a thickness of each of the lower substrate 110 and the upper substrate 160 may be in the range of 0.1 mm to 1.5 mm. When the thickness of the metal substrate is less than 0.1 mm or greater than 1.5 mm, since a heat radiation property or heat conduction rate may become excessively high, reliability of the thermoelectric device may be degraded. In addition, when the lower substrate 110 and the upper substrate 160 are the metal substrates, insulating layers 170 may be formed between the lower substrate 110 and the lower electrode 120 and between the upper substrate 160 and the upper electrode 150. The insulating layer 170 may include a material having a heat conductivity of 5 to 20 W/K.
In this case, sizes of the lower substrate 110 and the upper substrate 160 may also be different. For example, a volume, thickness, or area of one of the lower substrate 110 and the upper substrate 160 may be greater than that of the other thereof. Accordingly, heat absorption or radiation performance of the thermoelectric device may be improved. Preferably, at least any one of the volume, the thickness, and the area of the lower substrate 110 may be greater than the corresponding one of the upper substrate 160. In this case, when the lower substrate 110 is disposed in a high temperature region for the Seebeck effect, at least any one of the volume, the thickness, and the area of the lower substrate 110 may be greater than corresponding one of the upper substrate 160 when compared to a case in which the lower substrate 110 is applied to a heating region for the Peltier effect or a case in which the sealing member is disposed on the lower substrate 110 in order to protect a thermoelectric module, which will be described below, from an external environment. In this case, the area of the lower substrate 110 may be 1.2 to 5 times the area of the upper substrate 160. When the area of the lower substrate 110 is less than 1.2 times the area of the upper substrate 160, an effect on improvement of heat transfer efficiency is not high, and when the area of the lower substrate 110 is greater than 1.2 times the area of the upper substrate 160, the heat transfer efficiency is reduced rather remarkably, and it may be difficult to maintain a basic shape of the thermoelectric module.
In addition, a heat radiation pattern, for example, a concave-convex pattern, may be formed on a surface of at least one of the lower substrate 110 and the upper substrate 160. Accordingly, heat radiation performance of the thermoelectric device may be improved. When the concave-convex pattern is formed on the surface in contact with the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140, a bonding property between the thermoelectric leg and the substrate may be improved. The thermoelectric device 100 includes the lower substrate 110, the lower electrodes 120, the P-type thermoelectric legs 130, the N-type thermoelectric legs 140, the upper electrodes 150, and the upper substrate 160.
As illustrated in
Meanwhile, the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may have a structure illustrated in
In this case, each of the thermoelectric material layers 132 and 142 may include Bi and Te which are semiconductor materials. Materials or shapes of the thermoelectric material layers 132 and 142 may be the same as the above-described material or shape of the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140. When thermoelectric material layers 132 and 142 are polycrystalline layers, a bonding force between the thermoelectric material layers 132 and 142 and the first buffer layers 136-1 and 146-1 and the first plated layers 134-1 and 144-1 and a bonding force between the thermoelectric material layers 132 and 142 and the second buffer layers 136-2 and 146-2 and the second plated layers 134-2 and 144-2 may increase. Accordingly, even when the thermoelectric device 100 is applied to an application, for example, a vehicle in which vibration occurs, a problem, in that the first plated layers 134-1 and 144-1 and the second plated layers 134-2 and 144-2 are separated from the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 and carbonized, may be inhibited, and durability and reliability of the thermoelectric device 100 may be improved.
In addition, the metal layer may include Cu, a Cu alloy, Al, or an Al alloy and may have a thickness of 0.1 to 0.5 mm and preferably 0.2 to 0.3 mm.
Next, each of the first plated layers 134-1 and 144-1 and the second plated layers 134-2 and 144-2 may include at least one of Ni, Sn, Ti, Fe, Sb, Cr, and Mo and may have a thickness of 1 to 20 μm and preferably 1 to 10 μm. Since the first plated layers 134-1 and 144-1 and the second plated layers 134-2 and 144-2 inhibit reactions between Bi or Te, which are semiconductor materials in the thermoelectric material layers 132 and 142, and the metal layers, the first plated layers 134-1 and 144-1, and the second plated layers 134-2 and 144-2 may inhibit not only performance degradation of the thermoelectric device but also oxidation of the metal layers.
In this case, the first buffer layers 136-1 and 146-1 may be disposed between the thermoelectric material layers 132 and 142 and the first plated layers 134-1 and 144-1, and the second buffer layers 136-2 and 146-2 may be disposed between the thermoelectric material layers 132 and 142 and the second plated layers 134-2 and 144-2. In this case, each of the first buffer layers 136-1 and 146-1 and the second buffer layers 136-2 and 146-2 may include Te. For example, each of the first buffer layers 136-1 and 146-1 and the second buffer layers 136-2 and 146-2 may include at least one among Ni—Te, Sn—Te, Ti—Te, Fe—Te, Sb—Te, Cr—Te, and Mo—Te. According to the embodiment of the present invention, when the first buffer layers 136-1 and 146-1 each including Te are disposed between the thermoelectric material layers 132 and 142 and the first plated layers 134-1 and 144-1, and when the second buffer layers 136-2 and 146-2 each including Te are disposed between the thermoelectric material layers 132 and 142 and the second plated layers 134-2 and 144-2, Te in the thermoelectric material layers 132 and 142 may be inhibited from being diffused into the first plated layers 134-1 and 144-1 and the second plated layers 134-2 and 144-2. Accordingly, a problem in that an electric resistance increases in the thermoelectric material layer due to a Bi rich region may be inhibited.
As described above, although the terms, such as the lower substrate 110, the lower electrode 120, the upper electrode 150, and the upper substrate 160, have been used, “upper” and “lower” are arbitrarily used only for the sake of ease of understanding and convenience of description, and positions thereof may also be reversed so that the lower substrate 110 and the lower electrode 120 are disposed in upper portions, and the upper electrode 150 and the upper substrate 160 are disposed in lower portions.
Referring to
In this case, the first electrode 340, the P-type thermoelectric leg 350, the N-type thermoelectric leg 360, and the second electrode 370 may respectively correspond to the upper electrode 150, the P-type thermoelectric leg 130, the N-type thermoelectric leg 140, and the lower electrode 120 which have been described with reference to
Generally, since a power source is connected to the electrode disposed at a low temperature portion side of the thermoelectric device 300, higher withstand voltage performance may be required at a high temperature portion side than the low temperature portion side. In this case, it is illustrated that a positive (+) terminal and a negative (−) terminal are connected to the first electrodes 340, pass through the first insulating layer 310, the first substrate 320, and the second insulating layer 330, and extend downward, but the present invention is not limited thereto, and the positive (+) terminal and the negative (−) terminal may be connected to the first electrodes 340 and may laterally extend on the first insulating layer 310, the first substrate 320, and the second insulating layer 330.
Conversely, when the thermoelectric device 300 is driven, since the high temperature portion side of the thermoelectric device 300 may be exposed to a high temperature, for example, about 180° C. or more, there may be a problem of delamination between the electrodes, the insulating layer, and the substrate due to differences in thermal expansion coefficient between the electrodes, the insulating layer, and the substrate. Accordingly, higher heat conduction performance may be required at the high temperature portion side of the thermoelectric device 300 than the low temperature portion side thereof. Particularly, when the heat sink is further disposed on the substrate at the high temperature portion side of the thermoelectric device 300, a bonding force between the substrate and the heat sink may greatly affect durability and reliability of the thermoelectric device 300.
Hereinafter, it will be assumed and described that the first substrate 320 is disposed at the low temperature portion side of the thermoelectric device 300 and that the second substrate 380 is disposed at the high temperature portion side of the thermoelectric device 300.
According to the embodiment of the present invention, the first substrate 320 is formed as an aluminum substrate, and the second substrate 380 is formed as a copper substrate. The copper substrate has higher heat conductivity and electric conductivity than the aluminum substrate. Accordingly, when the first substrate 320 is formed as the aluminum substrate, and the second substrate 380 is formed as the copper substrate, both of high withstand voltage performance of the low temperature portion side and high heat radiation performance of the high temperature portion side may be satisfied.
In addition, the first substrate 320 is disposed on the first insulating layer 310, and the second insulating layer 330 is disposed on the first substrate 320. As described above, when the insulating layers are disposed on both surfaces of the first substrate 320, withstand voltage performance at a side of the first substrate 320 may be further improved.
In this case, the first insulating layer 310 may be an aluminum oxide layer. When the first insulating layer 310 is the aluminum oxide layer, the withstand voltage performance at the side of the first substrate 320 may be improved even without increasing thermal resistance thereof. In this case, a thickness of the first insulating layer 310 may be in the range of 20 to 100 μm, preferably 30 to 80 μm, and more preferably 35 to 60 μm. When the thickness of the first insulating layer 310 satisfies the numerical ranges, high heat conduction performance and the high withstand voltage performance may be satisfied at the same time.
In this case, a total sum of thicknesses of the insulating layers at the side of the first substrate 320, that is, the sum of the thickness of the first insulating layer 310 and a thickness of the second insulating layer 330, may be 80 μm or more and more preferably 80 to 480 μm. Generally, as the thickness of the insulating layer increases, withstand voltage performance may be improved. However, as the thickness of the insulating layer increases, there is a problem of increasing thermal resistance. However, in the embodiment of the present invention, as the insulating layers at the side of the first substrate 320 are separately disposed at both sides of the first substrate 320, and particularly, the aluminum oxide layer is disposed under the first substrate 320, the high heat conduction performance and the high withstand voltage performance may be satisfied at the same time.
Meanwhile, as illustrated in
In this case, the inorganic filler may be included in the resin layer at 68 to 88 vol % of the resin layer. When the inorganic filler is included therein at less than 68 vol % thereof, a heat conduction effect may be low, and when the inorganic filler is included therein at greater than 88 vol %, the resin layer may break easily.
In addition, the epoxy resin may include an epoxy compound and a hardener. In this case, the hardener may be included in the range of 1 to 10 volume ratio based on 10 volume ratio of the epoxy compound. In this case, the epoxy compound may include at least one among a crystalline epoxy compound, an amorphous epoxy compound, and a silicone epoxy compound. The inorganic filler may include aluminum oxide and nitride, and the nitride may be included therein at 55 to 95 wt % of the inorganic filler and more preferably at 60 to 80 wt % thereof. When the nitride is included therein in the numerical range, heat conductivity and a bonding force may be improved. In this case, the nitride may include at least one of boron nitride and aluminum nitride.
In this case, a particle size D50 of a boron nitride aggregate may be in the range of 250 to 350 μm, and a particle size D50 of the aluminum oxide may be in the range of 10 to 30 μm. When the particle size D50 of the boron nitride aggregate satisfies the numerical value, and the particle size D50 of the aluminum oxide satisfies the numerical value, the boron nitride aggregate and the aluminum oxide may be uniformly distributed in the resin layer, and thus, the entire resin layer may have a uniform heat conduction effect and bonding performance.
In this case, in terms of heat conduction performance, it is advantageous for the second insulating layer 330 formed as the resin layer to be disposed as thinly as possible while maintaining insulation performance and bonding performance between the first substrate 320 and the first electrode 340. According to the embodiment of the present invention, since the first insulating layer 310 formed as the aluminum oxide layer is disposed with the second insulating layer 330 with the first substrate 320 interposed therebetween, the low temperature portion side may have sufficient withstand voltage performance even when the thickness of the second insulating layer 330 formed as the resin layer is equal to or smaller than a thickness of the third insulating layer 370 formed of the material which is the same as the material of the second insulating layer 330. Accordingly, the thickness of the second insulating layer 330 formed as the resin layer may be equal to or smaller than the thickness of the third insulating layer 370.
Particularly, the thickness of the third insulating layer 370 may be greater than the thickness of the second insulating layer 330. As described above, when the thermoelectric device 300 is driven, a temperature of the high temperature portion side may raise to about 180° C. or more, and when the third insulating layer 370 is formed as the flexible resin layer according to the embodiment of the present invention, the third insulating layer 370 may serve to relieve thermal shock between the second electrode 360 and the second substrate 380.
Meanwhile, referring to
Alternatively, referring to
As described above, according to the embodiment of the present invention, the thermoelectric device, in which the structure of the substrate and the insulating layer is changed to correspond to a difference in characteristic between a low temperature portion and a high temperature portion of the thermoelectric device, may be obtained.
In this case, at least one of a first aluminum oxide layer 312 and the second aluminum oxide layer 334 may be formed by anodizing the aluminum substrate which is the first substrate 320. Alternatively, at least one of the first aluminum oxide layer 312 and the second aluminum oxide layer 334 may also be formed using a dipping process or spray process.
Meanwhile, as illustrated in
Meanwhile, as described above, the heat sink may be further disposed at the high temperature portion side. The second substrate 380 and the heat sink 390 of the high temperature portion side may be integrally formed, but the separate second substrate 380 and heat sink 390 may also be bonded. In this case, when a metal oxide layer is formed on the second substrate 380, it may be difficult to bond the second substrate 380 and the heat sink 390. Accordingly, in order to increase bonding strength between the second substrate 380 and the heat sink 390, the metal oxide layer may not be formed between the second substrate 380 and the heat sink 390. That is, when the second substrate 380 is the copper substrate, a copper oxide layer may not be formed on the copper substrate. To this end, a surface treatment may be performed on the copper substrate in advance to inhibit the copper substrate from being oxidized. For example, when the copper substrate is plated with a metal layer of nickel having a property which is not easily oxidized when compared to the copper, the metal oxide layer may be inhibited from being formed on the copper substrate.
As described above, according to the embodiment of the present invention, the thermoelectric device, in which the structure of the substrate and the insulating layer of the low temperature portion side and the structure of the substrate and the insulating layer of the high temperature portion side are different to correspond to a difference in characteristic between the low temperature portion and the high temperature portion of the thermoelectric device, may be obtained.
Table 1 and
Referring to Table 1 and
Table 2 shows a result of measuring a thermal resistance of each thermoelectric device according to Comparative Example and Examples.
In Comparative Example, an insulating layer formed as a resin layer is disposed on a copper substrate, in Example 1, the aluminum substrate is disposed on the aluminum oxide layer, and the insulating layer formed as the resin layer is further disposed thereon, in Example 2, the aluminum oxide layers are disposed on both surfaces of the aluminum substrate, and in Example 3, the aluminum oxide layers are formed on both surfaces of the aluminum substrate, and the insulating layer formed as the resin layer is further disposed thereon.
Referring to Table 2, in Comparative Example, it may be seen that, although a total thickness of the insulating layer is 40 μm which is smaller than a total thickness of each of the insulating layers of Examples 1 to 3, the insulating layer has a higher thermal resistance than each of the insulating layers of Examples 1 to 3. In addition, it may be seen that each of the thermal resistances in Examples 2 and 3 in which the aluminum oxide layers are disposed on both surfaces of the aluminum substrate is significantly lower than the thermal resistance in Example 1 in which the aluminum oxide layer is disposed on only one surface of the aluminum substrate. In addition, in the case of Example 3 in which the resin layer is further disposed on the aluminum oxide layer, although the thermal resistance is similar, bonding performance between the aluminum substrate and the electrode may be higher when compared to the Example 2.
Meanwhile,
Referring to
The thermoelectric device according to the embodiment of the present may be applied to power generation apparatuses, cooling apparatuses, heating apparatuses, and the like. Specifically, the thermoelectric device according to the embodiment of the present invention may be mainly applied to optical communication modules, sensors, medical apparatuses, measuring instruments, aerospace industries, refrigerators, chillers, automobile ventilation seats, cup holders, washing machines, dryers, wine cellars, water purifiers, power supplies for sensors, thermopiles, and the like.
In this case, as examples of the thermoelectric device according to the embodiments of the present invention applied to the medical apparatuses, there are polymerase chain reaction (PCR) apparatuses. The PCR apparatus is an apparatus which is for determining the nucleotide sequence of deoxyribonucleic acid (DNA) by amplifying DNA and in which precise temperature control and thermal cycle are required. To this end, a Peltier-based thermoelectric device may be applied thereto.
As other examples of the thermoelectric device according to the embodiments of the present invention applied to the medical apparatuses, there are photo detectors. In this case, the photo detectors may include infrared/ultraviolet detectors, charge coupled apparatus (CCD) sensors, X-ray detectors, thermoelectric thermal reference sources (TTRSs), and the like. A Peltier-based thermoelectric device may be applied to cooling a photo detector. Accordingly, a change in wavelength, output degradation, and resolution degradation due to an increase in temperature in the photo detector may be inhibited.
As still other examples of the thermoelectric device according to the embodiments of the present invention applied to the medical apparatuses, there are immunoassay fields, in vitro diagnostics fields, general temperature control and cooling systems, physical therapy fields, liquid chiller systems, blood/plasma temperature control fields, and the like. Accordingly, precise temperature control may be performed.
As still other examples of the thermoelectric device according to the embodiments of the present invention applied to the medical apparatuses, there are artificial hearts. Accordingly, power may be applied to the artificial heart.
As examples of the thermoelectric device according to the embodiments of the present invention applied to the aerospace industries, there are star tracking systems, thermal imaging cameras, infrared/ultraviolet detectors, CCD sensors, the Hubble Space Telescope, TTRSs, and the like. Accordingly, a temperature of an image sensor may be maintained.
As other examples of the thermoelectric device according to the embodiments of the present invention applied to the aerospace industries, there are cooling apparatuses, heaters, power generation apparatuses, and the like.
In addition, the thermoelectric device according to the embodiments of the present invention may be applied to generating power, cooling, and heating in other industries.
While the invention has been shown and described with reference to the exemplary embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims below.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2019-0066648 | Jun 2019 | KR | national |
This application is the U.S. national stage application of International Patent Application No. PCT/KR2020/006946, filed May 28, 2020, which claims the benefit under 35 U.S.C. § 119 of Korean Application No. 10-2019-0066648, filed Jun. 5, 2019, the disclosures of each of which are incorporated herein by reference in their entirety.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/KR2020/006946 | 5/28/2020 | WO |
