Patent Application
20180083177
The present invention relates to a thermoelectric material with characteristics of mutually converting heat energy and electric energy, to a manufacturing method of the thermoelectric material, and to a thermoelectric converter using the thermoelectric material.
The thermoelectric elements or the thermoelectric converters for converting heat into electricity due to the difference in temperature are well known (for example, NON-PATENT DOCUMENTS 1-4 and PATENT DOCUMENT 1). These thermoelectric elements are configured by electrically connecting in serial two kinds of conductive thermoelectric material pairs of p-type and n-type having thermoelectric properties, and by thermally arranging them in parallel. By applying difference of temperature between both sides of such thermoelectric elements, an electromotive force will occur between both terminals of the thermoelectric elements (Seebeck Effect).
In the known thermoelectric elements, a thermoelectric material such as a bismuth tellurium alloy, a lead/tellurium alloy or a silicon germanium alloy has been used. These thermoelectric materials have the most suitable using ranges in temperature, namely, a temperature range from the room temperature to 250° C. is used as for the bismuth tellurium alloy, a temperature range from 250° C. to 550° C. is used as for the lead/ tellurium alloy, and a temperature range equal to or higher than 550° C. is used as for the silicon germanium alloy.
In general, the thermoelectric performance of the thermoelectric material is evaluated by a thermoelectric performance index or a thermoelectric figure of merit Z. This figure of merit Z is defined as follows using a Seebeck coefficient S, an electrical resistivity ρ and a thermal conductivity κ of the material:
Z=S
2/ρκ.
That is, the figure of merit Z is high in case that the Seebeck coefficient S is high, the electrical resistivity ρ is small, and/or the thermal conductivity κ is low. The dimension of the figure of merit Z is equal to that of an inverse number of the temperature 1/κ.
A coefficient ZT obtained by multiplying a temperature at the time of the measurement with the figure of merit Z becomes dimensionless. This coefficient ZT is called as a dimensionless figure of merit, and used for an evaluation of the thermoelectric performance of thermoelectric material. In case of ZT>1, the thermoelectric material has practical utility, and, in case of ZT>3, the thermoelectric material is profitable for the thermoelectric generation.
Although fifty years has been passed from the discovery of the bismuth tellurium alloy, since there is no better thermoelectric material having a higher figure of merit Z than that of the bismuth tellurium alloy, this alloy is still currently used as the thermoelectric material in the temperature range from the room temperature to 250° C. However, the maximum value of the coefficient ZT of this material is still around 1.3.
Non-Patent Document 1
Kinichi Uemura, Isao Nishida, “Thermoelectric Semiconductor And The Application”, Nikkan Kogyo Newspaper Company, 1988
Non-Patent Document 2
Kakuei Matsubara, “About Thermoelectric Conversion”, J. Plasma Fusion Res. No. 12 p 818-824 (2011)
Non-Patent Document 3
Ryo Sakata edition, “Thermoelectric Conversion Basics And Application”, Shoukabou, 2005
Non-Patent Document 4
Wei Liu et al, “Convergence Of Conduction Bands As A Means Of Enhancing Thermoelectric Performance Of n-Type Mg2Sil-xSnx Solid Solutions”, Physical Review Letters 108 166601 (2012)
Patent Document 1
Japanese Patent No. 5079559
The thermal conductivity of the conventional thermoelectric material was in general 5 W/mK or more as for the smelted material and 1 W/mK or more as for the sintered material. As aforementioned, one way for increasing the figure of merit Z is to make the thermal conductivity κ small. If the thermal conductivity κ is small, since better thermal insulation effect is obtained, it is possible to thin the thermoelectric element. However, because the thermal conductivity κ of the conventional thermoelectric material was 1 W/mK or more as above-mentioned, it was extremely difficult to lower this value according to the conventional manufacturing method.
As aforementioned, the bismuth tellurium alloy is still currently used as the thermoelectric material in the temperature range from the room temperature to 250° C. because, in this temperature range, the Seebeck coefficient S of this alloy is higher than that of other materials, the electrical resistivity ρ is smaller than that of other materials, and the thermal conductivity κ is lower than that of other materials. Thus, the figure of merit Z is higher than that of the other materials. However, both bismuth and tellurium are heavy metals with toxic and rare for the resources. Particularly, tellurium is produced only a few hundred tons per year all over the world, and therefore it is difficult to widely use this tellurium as the thermoelectric material. Under these circumstances, a material with no problem for the resources and capable of providing performance similar to that of the bismuth tellurium alloy is demanded.
The main substance of the bismuth tellurium alloy is a compound Bi2Te3 and the crystal structure of this compound determines characteristics of the alloy. However, this crystal structure is sensitive to the fabrication processes and easily changes depending upon conditions of the processes. Thus, it was quiet difficult to reproducibly fabricate the bismuth tellurium alloy and as a result it was difficult to keep the characteristic of the fabricated bismuth tellurium alloy constant.
It has been expected therefore to provide a new thermoelectric material that can resolve the problems of such conventional bismuth tellurium alloy, has thermoelectric characteristics equal to these of the bismuth tellurium alloy, has no toxicity, has no problem for the resources, and can easily keep the characteristic constant, and to provide a manufacturing method of the new thermoelectric material.
As for the manufacturing methods of the conventional thermoelectric material such as a magnesium silicon alloy or a magnesium silicon tin alloy, the SPS (Spark Plasma Sintering) method has been used in order to nominate the density of the alloy. This conventional manufacturing method of the thermoelectric material has processes of powdering the alloy, elevating temperature and pressure of the powdered alloy in high vacuum condition, and providing a large electric current thereto in a short time. However, this manufacturing method could not fabricate a cheap thermoelectric material in large quantities and thus the fabricated thermoelectric material became high-price.
It is therefore an object of the present invention to resolve the problems of the conventional thermoelectric material and to provide a thermoelectric material with a low thermal conductivity and a good insulation characteristic, a manufacturing method of the thermoelectric material, and a thermoelectric converter using the thermoelectric material.
According to the present invention, provided is a thermoelectric material containing as a major ingredient a magnesium silicon alloy, a magnesium silicon tin alloy, a silicon or a silicon germanium alloy, and including a porous body with a large number of pores.
Since the thermoelectric material of the present invention contains a magnesium silicon alloy, a magnesium silicon tin alloy, a silicon or a silicon germanium alloy as a major ingredient and formed as a porous body, it is possible to extremely reduce the thermal conductivity and to improve the figure of merit Z. Also, it is possible to reduce the thickness of the thermoelectric converter due to the large fall of the thermal conductivity. As well as the reduction of the thickness, the volume of voids leads to reduction of used amount of the material resulting to conserve resources of the thermoelectric material. Further, because the thermal conductivity can be lowered due to the porous body, materials that have large thermal conductivities and thus have not been conventionally considered as a thermoelectric material such as for example silicon and germanium can be used.
It is preferred that the porous body has a porosity of 10% to 80%, more preferably a porosity of 30% to 60%. Thereby, it is possible to reduce the thermal conductivity and to keep a mechanical strength necessary for the thermoelectric material without largely increasing its electrical resistance.
According to the present invention, a manufacturing method of a thermoelectric material includes a process of powdering a raw material containing as a major ingredient a magnesium silicon alloy or a magnesium silicon tin alloy; a process of adding powdered additive agent of 5-20% for forming a large number of pores to the raw material powdered in the powdering process, the added powdered additive agent being mixed with the powdered raw material and dispersed; a process of molding a mixture provided by the adding process; and a process of heating the mixture molded in the molding process in vacuum or an inert gas to a temperature of 550-800° C. (lust under a melting point) to form a porous body.
It is preferred that the powdered additive agent is polyvinyl alcohol (PVA). Also, it is preferred that the method further includes a process of impregnating a liquid silicon resin or glass into the porous body formed by the heating process and of solidifying the impregnated porous body.
According to the present invention, further provided is a thermoelectric converter configured by electrically connecting in series a p-type thermoelectric material molded body and an n-type thermoelectric material molded body. The p-type thermoelectric material molded body and the n-type thermoelectric material molded body contain as a major ingredient a magnesium silicon alloy, a magnesium silicon tin alloy, a silicon or a silicon germanium alloy, and include a porous body with a large number of pores.
Thus, it is possible to extremely reduce the thermal conductivity resulting to reduce the thickness of the thermoelectric converter. As well as the reduction of the thickness, the volume of voids leads to reduction of used amount of the material resulting to conserve resources of the thermoelectric material.
It is preferred that the porous body has a porosity of 10% to 80%, more preferably a porosity of 30% to 60%. Thereby it is possible to reduce the thermal conductivity and to keep a mechanical strength necessary for the thermoelectric material without largely increasing its electrical resistance.
It is preferred that a plurality of pairs of the p-type thermoelectric material molded body and the n-type thermoelectric material molded body are electrically connected in series with each other to convert heat into electricity due to difference in temperature, and that the converter further includes a hot-side metal plate for coupling the p-type thermoelectric material molded body and the n-type thermoelectric material molded body that are adjacent with each other, a cold-side metal plate opposed to the hot-side metal plate, for coupling the p-type thermoelectric material molded body of one pair and the p-type thermoelectric material molded body of another pair adjacent to the above-mentioned one pair, an anode electrode extracted from the p-type thermoelectric material molded body, and a cathode electrode extracted from the n-type thermoelectric material molded body. Thereby bigger electromotive force can be obtained.
According to the thermoelectric material of the present invention, it is possible to extremely reduce the thermal conductivity and to improve the figure of merit Z. Also, it is possible to reduce the thickness of the thermoelectric converter due to the large fall of the thermal conductivity. As well as the reduction of the thickness, the volume of voids leads to reduction of used amount of the material resulting to conserve resources of the thermoelectric material. Further, because the thermal conductivity can be lowered due to the porous body, materials that have large thermal conductivities and thus have not been conventionally considered as a thermoelectric material such as for example silicon, and germanium can be used.
According to the thermoelectric material of the present invention, since the powdered additive agent of 5-20% for forming a large number of pores to the raw material powdered in the powdering process, is added to be mixed with the powdered raw material and dispersed, and then the mixture is heated to decompose, a uniform porous body can be easily provided.
According to the thermoelectric converter of the present invention, it is possible to extremely reduce the thermal conductivity resulting to reduce the thickness of the thermoelectric converter. As well as the reduction of the thickness, the volume of voids leads to reduction of used amount of the material resulting to conserve resources of the thermoelectric material.
Hereinafter, an embodiment of the thermoelectric converter according to the present invention will be described with reference to the appended drawings.
As shown in
As shown in
The p-type thermoelectric material molded body 10 according to the present invention is formed from a porous body with a lot of pores containing as a major ingredient either of a magnesium silicon alloy, a magnesium silicon tin alloy, a silicon or a silicon germanium alloy. That is, first, a raw material of the p-type thermoelectric material is formed by adding an additive agent (dopant) such as boron or else into the major ingredient either of a magnesium silicon alloy, a magnesium silicon tin alloy, a silicon or a silicon germanium alloy, then, a porous body having a lot of pores is formed, thereafter, this porous body is cut into rectangle bodies each having a predetermined size so as to obtain the p-type thermoelectric material molded body 10. It is desired that the porous body has a porosity of 10% to 80%. Specific manufacturing processes of the p-type thermoelectric material molded body 10 will be described later.
The n-type thermoelectric material molded body 20 according to the present invention is formed from a porous body with a lot of pores containing as a major ingredient either of a magnesium silicon alloy, a magnesium silicon tin alloy, a silicon or a silicon germanium alloy. That is, first, a raw material of the n-type thermoelectric material is formed by adding an additive agent (dopant) such as phosphorus or else into the major ingredient either of a magnesium silicon alloy, a magnesium silicon tin alloy, a silicon or a silicon germanium alloy, then, a porous body having a lot of pores is formed, thereafter, this porous body is cut into rectangle bodies each having a predetermined size so as to obtain the n-type thermoelectric material molded body 20. It is desired that the porous body has a porosity of 10% to 80%. Specific manufacturing processes of n-type thermoelectric material molded body 20 will be described later.
The hot-side metal plate 30 electrically couples the p-type thermoelectric material molded body 10 and the n-type thermoelectric material molded body 20. This hot-side metal plate 30 is fixed to the end portion of the p-type thermoelectric material molded body 10 and the end portion of the n-type thermoelectric material molded body 20. As for fixing of the hot-side metal plate 30, used is the welding method utilizing a metal material that will not melt in the operating temperature range.
The anode electrode 40 and the anode electrode 40A are electrodes extracted from the p-type thermoelectric material molded bodies and fixed to the end portions of the p-type thermoelectric material molded bodies 10.
The cathode electrode 50 and the cathode electrode 50A are electrodes extracted from the n-type thermoelectric material molded bodies and fixed to the end portions of the n-type thermoelectric material molded bodies 20.
In the thermoelectric converter 100A constituted by a plurality of thermoelectric converters 100, each of the cold-side metal plates 60 electrically couples, at the side opposed to the hot-side metal plates 30, the p-type thermoelectric material molded body 10 of one thermoelectric converter 100 and the n-type thermoelectric material molded body 20 of an adjacent thermoelectric converter 100. This cold-side metal plate 60 is fixed to the end portion of the p-type thermoelectric material molded body 10 and the end portion of the n-type thermoelectric material molded body 20.
In each thermoelectric converter 100 thus configured, the upper side is the hot-side and the lower side is the cold-side. In the upper hot-side, electrons strenuously exercise and scatter to the cold-side in the n-type thermoelectric material molded body 20, and holes strenuously exercise and scatter to the cold-side in the p-type thermoelectric material molded body 10. As a result, a potential difference will foe produced between the anode electrode 40 and the cathode electrode 50.
Because the thermos-electromotive force generated from the single thermoelectric converter 100 is small, a plurality of thermoelectric converters 100 are connected in series, like the thermoelectric converter 100A shown in
Hereinafter, the manufacturing method of the thermoelectric material according to the present invention will be described.
As shown in
An n-type thermoelectric material was fabricated using the melting method by adding an antimonial (Sb) into a magnesium silicon tin alloy (Mg—Si—Sn alloy). Then, the fabricated thermoelectric material was powdered and thereafter a water solution of PVA was added to the powder to form a slurry. The slurry was cast in molds and cooled at −10° C. to turn into a gel, and then the gel was removed from the molds and heated in the atmosphere for 24 hours at 60 ° C. to evaporate the water. Thereafter, the heated gel was left unattended in the atmosphere for 12 hours at 120° C. to completely evaporate the water. Then, air would enter into portions in the powder, from which the water came out, to form a porous body.
Next, the fabricated porous body was heated to a predetermined temperature in vacuum or inert gases. While this heating, shapes of a large number of the powder particles of the porous body were kept as they were, but the surfaces of a part of the powder particles were molten to couple with the adjacent powder particles. As a result, a low-resistive and high-strength porous body of magnesium silicon tin alloy could be provided.
A porosity a of the porous body is defined as follows:
α=Va/(Vm+Va)
here, Va indicates a volume of the voids, and Vm indicates a volume of the material.
The porosity a will be given from the quantity of the water solution of added PVA. The porosity a of the porous body fabricated by adding a 10% water solution of the PVA to the powdered raw material to form a slurry raw material, by freezing the slurry raw material to turn into a gel, by drying the gel, and by heating the dried material is shown in
In case that the porosity is less than 10%, the porous body will have characteristics approximately similar to that of the non-porous body material, namely of the conventional thermoelectric material (ingot material) and no effect to reduce the thermal conductivity will be provided. On the other hand, in case that the porosity is more than 80%, the porous body will have a larger electrical resistivity and a weak material-strength, and thus, it will be hard to use for the thermoelectric material. Therefore, it is desired that, as for the thermoelectric material, the porosity is within a range of 10% to 80%.
A thermoelectric material with a porosity of 50% was fabricated from the raw material of Mg2Si0.3Sn0.7 with the addition of 0.01 mol of Sb by the method of Example 1. The fabricated thermoelectric material had the following characteristics under about 700 K (427° C.):
From these characteristics, a high figure of merit Z of 2.23×10−3 K−1 was obtained and dimensionless figure of merit ZT=1.56 was provided. Although the electrical resistivity was increased due to a large number of pores formed in the porous body, influence of falling of the thermal conductivity was bigger than that of the electrical resistivity increase and, as a result, a large figure of merit Z was obtained.
An ingot was fabricated by mixing boron of 0.2 atom % with silicon, and by dissolving it in an inert gas without oxygen or in a vacuum. The fabricated ingot was crushed with hammers and then powdered using a ball mill. Thereafter, a water solution of PVA was added to the powder to form a slurry. The added PVA was adjusted so that the porosity became 70%. Then, the slurry was cast in molds and heated in the atmosphere for 24 hours at 60° C. to evaporate the water. Further, it was heated in the atmosphere for 12 hours at 120 20 C. to completely evaporate the water. Thus, air would enter into portions in the powder, from which the water came out, to form a porous body. Thereafter, the dried porous body was heated in a vacuum at a predetermined temperature, and then cooled. As a result, a porous body of silicon with a porosity of 70% was formed as a p-type thermoelectric material.
By using the similar fabrication method mentioned above, an ingot was fabricated by raising phosphorus of 0.3 atom % with silicon, and by dissolving it in an inert gas without oxygen or in a vacuum, and the fabricated ingot was crushed with hammers and then powdered using a ball mill. Thereafter, a water solution of PVA was added to the powder to form a slurry. The added PVA was adjusted so that the porosity became 70%. Then, the slurry was cast in molds and heated in the atmosphere for 24 hours at 60° C. to evaporate the water. Further, it was heated in the atmosphere for 12 hours at 120° C. to completely evaporate the water. Thus, air would enter into portions in the powder, from which the water came out, to form a porous body. Thereafter, the dried porous body was heated in a vacuum at a temperature that would not exceed a melting point of silicon (1,414° C.), and then cooled. As a result, a porous body of silicon with a porosity of 70% was formed as an n-type thermoelectric material.
The electrical resistivity of the fabricated porous body of the silicon, that is the p-type thermoelectric material, was 1×10−4 Ωm. This electrical resistivity is equivalent to 10 times or more than that of the p-type silicon bulk. On the other hand, the thermal conductivity was greatly lowered to 1 W/Km. This thermal conductivity is hundredth part of that of the p-type silicon bulk. Also, due to the porous body, the Seebeck coefficient was not fallen but risen. Approximately similar results were obtained with respect to the porous body of the n-type silicon.
Because influence of falling of the thermal conductivity was bigger than that of the electrical resistivity increase, a dimensionless figure of merit ZT larger than that of the thermoelectric material (nonporous body) was obtained. As a result, the dimensionless figure of merit ZT became ZT=0.22 that is a level usable as the thermoelectric material.
The p-type and n-type silicon porous bodies fabricated by the aforementioned processes were cut into cubes of 1 cm, respectively, to form pn-junction thermoelectric converters shown in
P-type and n-type thermoelectric materials were fabricated by using the manufacturing method similar to that of Example 2 except that a silicon germanium alloy (Si0.95Ge0.05 alloy) was used instead of the silicon in Example 2. Due to this difference of the raw material used, the heat-treatment temperature of a dried porous body in a vacuum or inert gases in this Example 3 was set in a temperature region in which the liquid phase and the solid phase of the silicon germanium alloy are coexisting. By executing this heat-treatment, a part (surface) of the powder particles of the silicon germanium alloy was dissolved to form a continuous body as shown in
In this Example 4, a silicon germanium alloy (Si0.8Ge0.2 alloy) was used instead of the silicon in Example 2 and a powder of kalium chloride was used instead of the PVA in Example 2. The powder of kalium chloride was mixed with a powder of the silicon germanium alloy, and pressurized to harden the mixture. Then, the mixture with the added kalium chloride was heated at 770° C. that is just under the melting point of kalium chloride and, after having cooled off, dipped in the water to remove the added kalium chloride. After the kalium chloride was removed, the fabricated porous body was heated to a predetermined temperature in a vacuum. As a result, a porous body of magnesium silicon alloy could be provided as the p-type and n-type thermoelectric materials.
The provided thermoelectric material had the structure as shown in
In Example 3 and Example 4, the silicon germanium alloy was used. Although the germanium was high-priced, because the thermoelectric material was made as a porous body, the entered air in the porous body was served to save the amount of the germanium used. Also, the thickness of the thermoelectric material could be reduced due to the lowered heat conduction, resulting to save the amount of the material used. Due to the fabrication of the porous body, it was possible to save the amount of material used and to contribute to the cost reduction of the thermoelectric material.
In the heating process, the PVA begins the resolution to oxygen, hydrogen and carbon at around 200° C. Oxygen and hydrogen will evaporate from the alloy at 200-300° C. but carbon will remain in the alloy. This carbon will be scattered by the high-temperature heat treatment to some extent but will remain in the alloy up to around 800° C. The volume of the remained carbon is however extremely small, and portions in the alloy, from which oxygen and hydrogen were evaporated, become cavities or air bubbles.
A powder of magnesium of 36.5 WT %, a powder of silicon of 5.5 WT %, and a powder of tin of 58.0 WT % were mixed, an antimonial powder of 0.85 WT % was added as a n-type dopant to these mixed powders, and then these powders were mixed and crushed. The mixed and crushed raw material was pressurized and molded, and the molded raw material was sintered at a temperature of 700° C. in a vacuum or inert gases. The sintered raw material was crushed again into powder, then the powdered raw material was pressurized and molded again, and thereafter the molded raw material was sintered at temperature of 700° C. in a vacuum or inert gases again. The re-sintered raw material was crushed again into powder. Then, a powder of the PVA of 5-20 % WT was added to the powdered raw material as an additive powder, and mixed enough. Thus fabricated mixture was pressurized and molded, and the molded mixture was sintered at a temperature of 750° C. in a vacuum or inert gases. By sintering or heating the mixture material, the powder of the PVA in the mixture material was disintegrated and vaporized, and then n-type porous thermoelectric material with a lot of pores was obtained.
By using the similar manufacturing method as mentioned above, a powder of magnesium of 32.8 WT %, a powder of silicon of 6.6 WT %, and a powder of tin of 60.6 WT % were mixed, a silver powder of 0.78 WT % was added as a p-type dopant to these mixed powders, and then these powders were mixed and crushed. The mixed and crushed raw material was pressurized and molded, and the molded raw material was sintered at a temperature of 700° C. in a vacuum or inert gases. The sintered raw material was crushed again into powder, then the powdered raw material was pressurized and molded again, and thereafter the molded raw material was sintered at temperature of 700° C. in a vacuum or inert gases again. The re-sintered raw material was crushed again into powder. Then, a powder of the PVA of 5-20 % WT was added to the powdered raw material as an additive powder, and mixed enough. Thus fabricated mixture was pressurized and molded, and the molded mixture was sintered at a temperature of 750° C. in a vacuum or inert gases. By sintering or heating the mixture material, the powder of the PVA in the mixture material was disintegrated and vaporized, and then p-type porous thermoelectric material with a lot of pores was obtained.
Characteristics of thus fabricated n-type and p-type thermoelectric materials were examined.
A dimensionless figure of merit could be calculated from the abovementioned result.
ZT=(S2/ρκ)×T
when the results from
A powder of magnesium of 63.4 WT %, and a powder of silicon of 36.6 WT % were mixed, a phosphorus powder of 0.9 WT % was added as a n-type dopant to these mixed powders, and then these powders were mixed and crushed. The mixed and crushed raw material was pressurized and molded, and the molded raw material was sintered at a temperature of 500-850° C. in a vacuum or inert gases. As a result, the sintered raw material was weak and often powdered when the sintered temperature was equal to 550° C. or less, or equal to 810° C. or more. Therefore, it was apparent that the thermoelectric material according to the present invention was provided only when the sintered temperature was in a range equal to 600° C. or more and equal to 800° C. or less. The reasons of this result are caused by that no crystalline rearrangement occurs and the powder will not be combined when the sintered temperature is less than 600° C., and also that anti-fluorite structure of compound Mg2X (X=Si, Ge, Sn) which draws material characteristics of the present invention cannot be stably existed when the sintered temperature is more than 800° C. Therefore, the aforementioned temperature range is a heat-treatment temperature range common for both the magnesium silicon alloy and the magnesium silicon tin alloy.
The porous body of the thermoelectric material according to the present invention, including magnesium, is fabricated by forming pores with air therein and therefore easily influenced by oxygen and water in the air. In order to prevent such influence, the thermoelectric material was impregnated in a silicone series resin with a viscosity of 100 or less and then solidified. Alternatively, the thermoelectric material was impregnated in a low-melting point-glass and then solidified. Due to such treatment, a corrosion resistance of the thermoelectric material and/or the thermoelectric converter according to the present invention was largely improved.
As aforementioned, no electrical resistivity change was seen in the material into which the silicone series resin was impregnated and was solidified. Similar to this, no big change was seen about the thermal characteristics such as the thermal conductivity either.
As discussed above, the thermoelectric converter 100 according to the present embodiment has the p-type thermoelectric material molded body 10, the n-type thermoelectric material molded body 20, the hot-side metal plate 30 for coupling the p-type thermoelectric material molded body 10 and the n-type thermoelectric material molded body 20, the anode electrode 40 extracted from the p-type thermoelectric material molded body 10, and the cathode electrode 50 extracted from the n-type thermoelectric material molded body 20. The p-type thermoelectric material molded body 10 and the n-type thermoelectric material molded body 20 are formed from porous bodies with a lot of pores and with a porosity of 10% to 30%, more desirably a porosity of 30% to 60%, containing as a major ingredient either of a magnesium silicon alloy, a magnesium silicon tin alloy, a silicon or a silicon germanium alloy.
Thus, the thermoelectric material can extremely reduce the thermal conductivity and to improve the figure of merit Z. Also, it is possible to reduce the thickness of the thermoelectric converter due to the large fall of the thermal conductivity. As well as the reduction of the thickness, the volume of voids leads to reduction of used amount of the material resulting to conserve resources of the thermoelectric material. Further, because the thermal conductivity can be lowered due to forming in a porous body, the material that has large thermal conductivities and thus was not conventionally considered as the thermoelectric material such as for example silicon, and germanium can be used.
As aforementioned, the thermoelectric converters 100 and 100A using the thermoelectric material according to the present invention can reduce the thickness of the thermoelectric converter due to the large lowering of the thermal conductivity. In addition to the reduction of the thickness, the volume of voids leads to reduction of the used amount of the material resulting to conserve resources of the thermoelectric material.
In the above-mentioned embodiments, polyvinyl alcohol (PVA) or potassium chloride was added to a raw thermoelectric material to form a porous body. However, it should be noted that the manufacturing method of the thermoelectric material according to the present invention is not limited to this way but other additives or foaming agent may be added to a raw thermoelectric material to form a porous body.
Also, in the embodiments, the raw thermoelectric material contained as a major ingredient either of a magnesium silicon tin alloy, a silicon or a silicon germanium alloy. However, the thermoelectric material according to the present invention is not limited to these thermoelectric materials but other thermoelectric materials such as a magnesium silicon alloy may be used.
Many widely different embodiments of the present invention may be constructed without departing from the spirit and scope of the present invention. It should be understood that the present invention is not limited to the specific embodiments described in the specification, except as defined in the appended claims.
The present invention is applicable for the electrical generation using difference in temperature, and for producing difference of temperature from the electric energy.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2015/057711 | 3/16/2015 | WO | 00 |
