Claims
- 1. A thermoelectric material of the composition Zr0 5Hf0 5Ni1-xPdxSn0.99Sb0 01 and having a ZrNiSn-based, half-Heusler crystal lattice structure conforming to a space group of F43m.
- 2. A thermoelectric material of the composition Z0.5Hf0.5Ni[0.5-0.8]Pd[0.2-0.5]Sn0 99Sb0 01 and having a ZrNiSn-based, half-Heusler crystal lattice structure conforming to a space group of F43m.
- 3. A thermoelectric material of the composition Zr0 5Hf0.5Ni0.8Pd0.2Sn0.99Sb0 01 and having a ZrNiSn-based, half-Heusler crystal lattice structure conforming to a space group of F43m.
- 4. A thermoelectric material as recited in claim 3 wherein said ZrNiSn-based structure possesses a figure of merit (ZT) value of about 0.7 at a temperature of about 800 K.
STATEMENT OF GOVERNMENT SUPPORT
[0001] The Government of the United States of America has rights in this invention pursuant to Agreement No. DARPA N00014-98-3-0011.