The present invention relates to sensors for detecting the presence of a constituent in a gaseous stream. More particularly, the present invention relates to a hydrogen gas sensor configuration having first and second hydrogen sensing elements, a reference element, a heating element, and a temperature-sensing element.
In gas sensor applications, the arrangement of the sensor elements on their underlying substrate should exhibit certain attributes to improve or optimize their performance. In particular, it is desirable to physically arrange and integrate the sensing and operational elements of the sensor so that the components are maintained at essentially the same temperature. In practice, the sensor elements should be arranged so as to minimize the substrate area occupied by the elements, thereby reducing or minimizing thermal convection///and conduction losses among the sensor elements. Secondarily, minimizing the occupied substrate area also reduces the amount of substrate material required to fabricate the sensor, and thus reduces fabricating costs.
Conventional, prior art solutions, such as those developed at Sandia National Laboratories (see R. Thomas and R. Hughes, “Sensors for Detecting Molecular Hydrogen Based on PD Metal Alloys”, J. Electrochem. Soc., Vol. 144, No. 9, September 1997; and U.S. Pat. No. 5,279,795), involve the interlacing of the sensing and operational elements of the sensor. Such conventional solutions employ a geometry that deploys the sensor elements over a significantly larger area than necessary, thus rendering the design less effective in terms of thermal layout, in that the sensing element(s) of the sensor (capacitive metal-on-silicon (MOS) elements in the case of the Sandia design) do not occupy a common, uniform thermal environment. The Sandia design also has greater than optimal manufacturing costs due to the interlaced design rendering unused significant portions of the underlying substrate material. The Sandia and similar prior art designs did not seek to optimize the thermal environment of the sensor assembly. Nor did the Sandia or similar prior art designs seek to optimize the mechanical compactness of the sensor assembly.
Although conventional, prior art solutions had some thermal integration of the heating element, the temperature sensor and the gas sensor, the geometry was such that these elements could become flow sensitive. Flow sensitivity refers to the effect that the flow rate of the gas stream to be measured can have in conducting heat from the element(s), thereby lowering their temperature and requiring additional electrical power to restore the temperature of the element(s) to their original and desired level. Sandia-type sensor designs included an additional capacitive (MOS) sensor, which was located outside of the portion of the assembly having controllable and uniform thermal properties. Moreover, such conventional, prior art designs had considerable wasted space on the underlying silicon die or substrate on which the sensor elements were arranged, which would multiply (approximately triple) the manufacturing costs and heat loss from the sensor elements to the external environment.
In the present gas sensor assembly, the sensing and control elements are mounted on the underlying substrate and operated so as to maintain thermal integrity and prevent heat loss. In particular, the area occupied by the sensor elements is minimized or conserved to minimize or reduce thermal losses to convection/conduction///of heat to and from the sensor components. The present gas sensor assembly is also configured for compactness to minimize or reduce manufacturing and parts costs by maximizing or increasing the number of sensor elements mounted on a substrate.
One or more of the foregoing shortcomings of conventional, prior art gas sensors is overcome by the present gas sensor, which integrates four thin-film elements in a geometric configuration that conserves and/or optimizes the area occupied on a die substrate, while reducing and/or minimizing thermal heat losses.
The present gas sensor for sensing a gas stream constituent comprises:
In a preferred embodiment of the present gas sensor, each of the first gas-sensing element and the reference element comprises a material having electrical properties that change upon exposure to the gas stream constituent. The temperature-sensing element preferably substantially circumscribes the heating element. The second gas-sensing element preferably substantially circumscribes the first gas-sensing element and the reference element. The second gas-sensing element preferably substantially circumscribes the temperature-sensing element.
In a preferred embodiment of the present gas sensor, each of the first gas-sensing element and the reference element is a metal-gated metal-oxide semiconductor (MOS) solid-state device. The MOS device can comprise a MOS capacitor. The MOS device can also comprise a MOS transistor. The metal gate of the first gas-sensing MOS device preferably comprises a metal selected from the group consisting of palladium and a palladium alloy. The palladium alloy is preferably selected from the group consisting of palladium/nickel, palladium/gold and palladium/silver. The metal gate of the reference element MOS device preferably comprises a metal that is inert with respect to the gas stream constituent. The preferred inert metal is gold. The metal gate of the reference element MOS device can also comprise a passivated metal that is non-inert with respect to the gas stream constituent. The non-inert metal is preferably passivated by application of an inert coating material, such as glass or an inert polymeric material.
In a preferred embodiment of the present gas sensor, the substrate comprises a silicon-containing material. The heating element is preferably a resistive heating element. The temperature-sensing element preferably comprises a material having a stable temperature coefficient of resistance, most preferably nickel. The second gas-sensing element is preferably a catalytic metal resistor, most preferably a palladium/nickel alloy.
The present gas sensor is particularly configured to sense hydrogen concentration in a gas stream The first gas-sensing element senses hydrogen in a first concentration range of from 10−6 Torr to 10 Torr. The second gas-sensing element senses hydrogen in a second concentration range of greater than 1 Torr.
A method of sensing a gas stream constituent comprises:
A preferred embodiment of the sensing method further comprises:
A method of fabricating a gas sensor for sensing a gas stream constituent, the fabricating method comprises:
In the preferred fabricating method, each of the first gas-sensing element and the reference element comprises a material having electrical properties that change upon exposure to the gas stream constituent. The temperature-sensing element preferably substantially circumscribes the heating element. The second gas-sensing element preferably substantially circumscribes the first gas-sensing element and the reference element. The second gas-sensing element more preferably substantially circumscribes the temperature-sensing element. Each of the first gas-sensing element and the reference element is preferably a metal-gated metal-oxide semiconductor (MOS) solid-state device. The MOS device can comprise a MOS capacitor and can also comprise a MOS transistor.
The principal improvement achieved by the present thin film gas sensor design is that of employing a compact, thermally efficient design that has geometrical symmetry and surrounds that geometry with heating and sensing elements. The geometry is regular to minimize or reduce unused die surface area. The compact configuration minimizes or reduces sensitivity to temperature differences across the surface area of the sensor, both by virtue of the integrated geometry and the compact geometry.
Turning to
As further shown in
A heating element 180 is mounted on substrate 150, and substantially circumscribes first gas-sensing element 160 and reference element 170, as shown in
A second gas-sensing element 210 is also mounted on substrate 150. In the illustrated configuration, second gas-sensing element 210 substantially circumscribes first gas-sensing element 160 and reference element 170, and also substantially circumscribes temperature-sensing element 190. Second gas-sensing element 210 shown in
First gas-sensing element 160 and reference element 170 are preferably metal-on-silicon (MOS) capacitors. Such MOS devices are not restricted to a capacitive form, however, but could be implemented in p-n-p transistor, field-effect transistor (FET) or diode configurations as well.
In gas sensor 100 illustrated in
As shown in
As shown in
As shown in
The integrated die sensor assembly has been tested and has been shown to maintain favorable functional isolation among the sensing elements, exhibits reduced flow sensitivity, is thermally responsive, and is easily manufactured.
The advantages are the present thin film gas sensor include:
Although the present device has been implemented in its preferred embodiment to sense hydrogen, persons skilled in the technology involved here will recognize that one or more aspects of the present device could be implemented or readily modified to sense and/or detect the presence and/or amount of constituents in fluid streams generally, including gas streams containing hydrogen and/or other than hydrogen, liquid streams, liquid streams containing entrained gas(es) and/or solid(s), gas streams containing entrained liquid(s) and/or solid(s). Moreover, aspects of the present device could be implemented or readily modified to sense and/or detect the presence and/or amount of fluid constituents residing in the pores and/or lattice structure of solids
While particular steps, elements, embodiments and applications of the present invention have been shown and described, it will be understood, of course, that the invention is not limited thereto since modifications can be made by those skilled in the art, particularly in light of the foregoing teachings.
This application is a continuation of U.S. patent application Ser. No. 11/046,370, filed on Jan. 27, 2005. The '370 application was related to and claimed priority benefits from U.S. Provisional Patent Application Ser. No. 60/540,020, filed on Jan. 27, 2004. The '307 nonprovisional application and the '020 provisional application are each hereby incorporated by reference herein in its entirety.
Number | Date | Country | |
---|---|---|---|
60540020 | Jan 2004 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 11046370 | Jan 2005 | US |
Child | 11761990 | Jun 2007 | US |