Claims
- 1. A thin film magnetic head, comprising:
- an under layer formed on a substrate;
- a bottom magnetic core film formed on said under layer;
- a top magnetic core film which contacts said bottom magnetic core film on one side and which is opposed to said bottom magnetic core film via a magnetic gap film on the other side; and
- a protective layer formed on said top magnetic core film;
- wherein said under layer, said magnetic gap film, and said protective layer comprise 5 to 70 wt. % of at least one metal oxide having an oxidation number larger than that of Al.sub.2 O.sub.3, and the balance Al.sub.2 O.sub.3, whereby the thin film magnetic head is provided with reduced pole tip recession as compared to a magnetic head having an under layer, magnetic gap film and protective layer consisting of Al.sub.2 O.sub.3.
- 2. A magnetic disk drive having a thin film magnetic head of claim 1.
- 3. A thin film magnetic head according to claim 1, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering.
- 4. A thin film magnetic head according to claim 1, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering in a sputtering gas comprising at least one of Ar and O.sub.2.
- 5. A thin film magnetic head according to claim 1, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering in a sputtering gas comprising Ar--O.sub.2.
- 6. A thin film magnetic head, comprising:
- an under layer formed on a substrate;
- a bottom magnetic core film formed on said under layer;
- a top magnetic core film which contacts said bottom magnetic core film on one side and which is opposed to said bottom magnetic core film via a magnetic gap film on the other side; and
- a protective layer formed on said top magnetic core film;
- wherein said under layer, said magnetic gap film, and said protective layer comprise at least one metal oxide selected from the group consisting of 15 to 60 wt. % ZrO.sub.2, 15 to 60 wt. % HfO.sub.2, 10 to 60 wt. % TiO.sub.2, 5 to 70 wt. % Ta.sub.2 O.sub.5, 5 to 70 wt. % Nb.sub.2 O.sub.5, 5 to 40 wt. % CeO.sub.2, and 10 to 40 wt. % SiO.sub.2, and the balance of Al.sub.2 O.sub.3, whereby the thin film magnetic head is provided with reduced pole tip recession as compared to a magnetic head having an under layer, magnetic flap film and protective layer consisting of Al.sub.2 O.sub.3.
- 7. A thin film magnetic head according to claim 6, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering.
- 8. A thin film magnetic head according to claim 6, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering in a sputtering gas comprising at least one of Ar and O.sub.2.
- 9. A thin film magnetic head according to claim 6, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering in a sputtering gas comprising Ar--O.sub.2.
- 10. A thin film magnetic head comprising an under layer formed on a substrate; a bottom magnetic core film formed on said under layer; a top magnetic core film which contacts said bottom magnetic core film on one side and which is opposed to said bottom magnetic core film via a magnetic gap film on the other side; and a protective layer formed on said top magnetic core film; wherein said under layer, said magnetic gap film, and said protective layer comprise at least 60 wt. % Al.sub.2 O.sub.3 and 5 to 40 wt. % metal oxide having an oxidation number larger than that of Al.sub.2 O.sub.3, and have a dissolving rate of 0.1-15 .ANG./min for warm water of pH 6-8 at temperatures 40.degree.-60.degree. C.
- 11. A thin film magnetic head according to claim 10, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering.
- 12. A thin film magnetic head according to claim 10, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering in a sputtering gas comprising at least one of Ar and O.sub.2.
- 13. A thin film magnetic head according to claim 10, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering in a sputtering gas comprising Ar--O.sub.2.
- 14. A thin film magnetic head comprising an under layer formed on a substrate; a bottom magnetic core film formed on said under layer; a top magnetic core film which contacts said bottom magnetic core film on one side and which is opposed to said bottom magnetic core film via a magnetic gap film on the other side; and a protective layer formed on said top magnetic core film; wherein said under layer, said magnetic gap film, and said protective layer comprise at least 60 wt. % Al.sub.2 O.sub.3 and 5 to 40 wt. % metal oxide having an oxidation number larger than that of Al.sub.2 O.sub.3, and have etching rate of 1-100 nm/hr for deionized water of resistivity larger than 10 M.OMEGA.cm.
- 15. A thin film magnetic head according to claim 14, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering.
- 16. A thin film magnetic head according to claim 14, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering in a sputtering gas comprising at least one of Ar and O.sub.2.
- 17. A thin film magnetic head according to claim 14, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering in a sputtering gas comprising Ar--O.sub.2.
- 18. A thin film magnetic head comprising an under layer formed on a substrate; a bottom magnetic core film formed on said under layer; a top magnetic core film which contacts said bottom magnetic core film on one side and which is opposed to said bottom magnetic core film via a magnetic gap film on the other side; and a protective layer formed on said top magnetic core film; wherein said under layer, said magnetic gap film, and said protective layer comprise at least 60 wt. % Al.sub.2 O.sub.3 and 5 to 40 wt. % metal oxide having an oxidation number larger than that of Al.sub.2 O.sub.3, and have etching rate of 1-100 nm/hr for applying liquid of pH 6-8 and for removing liquid of pH 9-11.
- 19. A thin film magnetic head according to claim 18, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering.
- 20. A thin film magnetic head according to claim 18, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering in a sputtering gas comprising at least one of Ar and O.sub.2.
- 21. A thin film magnetic head according to claim 18, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering in a sputtering gas comprising Ar--O.sub.2.
- 22. A thin film magnetic head comprising an under layer formed on a substrate comprising a sintered material; a bottom magnetic core film formed on said under layer; a top magnetic core film which contacts said bottom magnetic core film on one side and which is opposed to said bottom magnetic core film via a magnetic gap film on the other side; and a protective layer formed on said top magnetic core film; wherein said under layer, said magnetic gap film, and said protective layer are each a sputtered film comprising at least 60 wt. % Al.sub.2 O.sub.3 and 5 to 40 wt. % metal oxide having an oxidation number larger than that of Al.sub.2 O.sub.3, and is substantially the same as said substrate in dissolving rate for deionized water.
- 23. A thin film magnetic head according to claim 22, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering.
- 24. A thin film magnetic head according to claim 22, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering in a sputtering gas comprising at least one of Ar and O.sub.2.
- 25. A thin film magnetic head according to claim 22, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering in a sputtering gas comprising Ar--O.sub.2.
- 26. A thin film magnetic head comprising an under layer formed on a substrate comprising a sintered material; a bottom magnetic core film formed on aid under layer; a top magnetic core film which contacts said bottom magnetic core film on one side and which is opposed to said bottom magnetic core film via a magnetic gap film on the other side; and a protective layer formed on said top magnetic core film; wherein said under layer, said magnetic gap film, and said protective layer are each a sputtered film comprising at least 60 wt. % Al.sub.2 O.sub.3 and 5 to 40 wt. % metal oxide having an oxidation number larger than that of Al.sub.2 O.sub.3, and is different from said substrate in dissolving rate by 0.1-15 .ANG./min.
- 27. A thin film magnetic head according to claim 26, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering.
- 28. A thin film magnetic head according to claim 26, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering in a sputtering gas comprising at least one of Ar and O.sub.2.
- 29. A thin film magnetic head according to claim 26, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering in a sputtering gas comprising Ar--O.sub.2.
- 30. A thin film magnetic head comprising an under layer formed on a substrate; a bottom magnetic core film formed on said under layer; a top magnetic core film which contacts said bottom magnetic core film on one side and which is opposed to said bottom magnetic core film via a magnetic gap film on the other side; and a protective layer formed on said top magnetic core film; wherein said under layer, said magnetic gap film, and said protective layer comprise a material different from a material of said substrate, and said under layer, said magnetic gap film, and said protective layer comprise at least 60 wt. % Al.sub.2 O.sub.3 and 5 to 40 wt. % metal oxide having an oxidation number larger than that of Al.sub.2 O.sub.3, and have substantially the same dissolving rate as said substrate.
- 31. A thin film magnetic head according to claim 30, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering.
- 32. A thin film magnetic head according to claim 30, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering in a sputtering gas comprising at least one of Ar and O.sub.2.
- 33. A thin film magnetic head according to claim 30, wherein said underlayer, said magnetic gap film and said protective layer are formed by sputtering in a sputtering gas comprising Ar--O.sub.2.
- 34. A thin film magnetic head, comprising:
- an under layer formed on a substrate;
- a bottom magnetic core film formed on said under layer;
- a top magnetic core film which contacts said bottom magnetic core film on one side and which is opposed to said bottom magnetic core film via a magnetic gap film on the other side; and
- a protective layer formed on said top magnetic core film;
- wherein said under layer, said magnetic gap film, and said protective layer comprise 5 to 60 wt % ZrO.sub.2, 2 to 10 wt % Y.sub.2 O.sub.3 and the balance Al.sub.2 O.sub.3, whereby the thin film magnetic head is provided with reduced pole tip recession as compared to a magnetic head having an under layer, magnetic gap film and protective layer consisting of Al.sub.2 O.sub.3.
- 35. A thin film magnetic head, comprising:
- an under layer formed on a substrate;
- a bottom magnetic core film formed on said under layer;
- a top magnetic core film which contacts said bottom magnetic core film on one side and which is opposed to said bottom magnetic core film via a magnetic gap film on the other side; and
- a protective layer formed on said top magnetic core film;
- wherein said under layer, said magnetic gap film and said protective layer comprise 5 to 60 wt % ZrO.sub.2, 2 to 10 wt % of at least one of CeO.sub.2 and Y.sub.2 O.sub.3, and the balance Al.sub.2 O.sub.3, whereby the thin film magnetic head is provided with reduced pole tip recession as compared to a magnetic head having an under layer, magnetic gap film and protective layer consisting of Al.sub.2 O.sub.3.
Priority Claims (2)
Number |
Date |
Country |
Kind |
3-242092 |
Sep 1991 |
JPX |
|
4-193715 |
Jul 1992 |
JPX |
|
Parent Case Info
This application is a Continuation of application Ser. No. 07/948,263, filed Sep. 21, 1992, now abandoned.
US Referenced Citations (15)
Foreign Referenced Citations (1)
Number |
Date |
Country |
60-20306 |
Feb 1985 |
JPX |
Non-Patent Literature Citations (1)
Entry |
IBM Technical Disclosure Bulletin, Etching Ferrite Cores, Collins and Youlton, vol. 25, No. 11B, Apr. 1983, p. 5902. |
Continuations (1)
|
Number |
Date |
Country |
Parent |
948263 |
Sep 1992 |
|