Thin-film magnetic head with little reattachment and manufacturing method of the head

Abstract

A manufacturing method of a thin-film magnetic head in which a magneto-sensitive portion is formed in a position where the width along the track-width direction is sufficiently small and a bias field from a bias means can be sufficiently received, and the influence of reattachments on reading output is avoided. The manufacturing method comprises steps of: forming an MR multilayer film comprising a foundation layer; a magneto-sensitive portion; and a cap layer of a material having an ion beam etching rate lower than that of a material of a free layer of the magneto-sensitive portion; and forming an MR effect multilayer by applying ion beam etching to the MR effect multilayer film by using a resist pattern as a mask in such a manner that an end point of the ion beam etching is below an upper surface of the lower electrode layer.

Description

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 shows a perspective view schematically illustrating a configuration of a main part of one embodiment of a magnetic disk apparatus according to the present invention;

FIG. 2 shows a perspective view of one embodiment of an HGA according to the present invention;

FIG. 3 shows a perspective view of one embodiment of a thin-film magnetic head attached to one end of the HGA shown in FIG. 2 according to the present invention;

FIG. 4 shows a cross-sectional view taken along line A-A in FIG. 3, illustrating a structure of a main portion of one embodiment of a thin-film magnetic head according to the present invention;

FIG. 5 shows a B-B cross-sectional view viewed from the head end surface in FIG. 3, schematically illustrating a layer structure of one embodiment of an MR effect multilayer;

FIG. 6 shows a flowchart showing an outline of one embodiment of a manufacturing method of a thin-film magnetic head according to the present invention;

FIGS. 7 a to 7f shows cross-sections taken along line A-A in FIG. 3, illustrating a process for forming the MR effect element and the electromagnetic coil element shown in FIG. 4 according to an embodiment;

FIGS. 8 a to 8f2 show cross-sectional views illustrating one embodiment of a process for forming an MR effect multilayer and a bias layer according to the present invention;

FIGS. 9 a to 9d show cross-sections parallel with the ABS of main parts of the comparative examples 1-3 and the practical example; and

FIGS. 10 a and 10b show cross-sectional views of an MR effect multilayer for illustrating how a reattachment is formed.

Claims

1. A manufacturing method of a thin-film magnetic head comprising steps of: forming a magnetoresistive multilayer film comprising a foundation layer, a magneto-sensitive portion and a cap layer by forming:said foundation layer on a lower electrode layer formed on an element formation surface of a substrate;said magneto-sensitive portion including a pinned layer, a free layer, and a non-magnetic intermediate layer sandwiched between said pinned layer and said free layer on said foundation layer; andsaid cap layer of a material having an ion beam etching rate lower than that of a material of said free layer on said magneto-sensitive portion;forming a resist pattern on said magnetoresistive multilayer film; andforming a magnetoresistive effect multilayer by applying ion beam etching to said magnetoresistive effect multilayer film by using said resist pattern as a mask in such a manner that an end point of said ion beam etching is below an upper surface of said lower electrode layer.

2. The manufacturing method as claimed in claim 1, wherein said free layer is formed by depositing a CoFe alloy film, a NiFe alloy film, or a multilayer film consisting of a CoFe alloy film and a NiFe alloy film, and said cap layer is formed by depositing a Ta film.

3. The manufacturing method as claimed in claim 1, wherein said magnetoresistive effect multilayer film is irradiated with ion beam at an incidence angle to said element formation surface in a range between 0 and 20 degrees during said ion beam etching.

4. A magnetoresistive effect element comprising: a substrate having an element formation surface;a lower electrode layer formed on said element formation surface;a foundation layer formed on said lower electrode layer;a magneto-sensitive portion formed on said foundation layer, having a pinned layer, a free layer, and a non-magnetic intermediate layer sandwiched between said pinned layer and said free layer;a cap layer formed on said magneto-sensitive portion,an upper electrode layer formed on said cap layer; anda bias layer formed on both side surfaces of said magneto-sensitive portion along the track-width direction with an insulating layer being provided between each of said side surface and said bias layer,a inclination angle θS formed by a side surface of said magneto-sensitive portion along the track-width direction to said element formation surface, being greater than both of a inclination angle θC formed by a side surface of an upper portion of said cap layer along the track-width direction to said element formation surface and a inclination angle θU formed by a side surface of a lower portion of said foundation layer along the track-width direction to said element formation surface.

5. The magnetoresistive effect element as claimed in claim 4, wherein said cap layer is made of a material having an ion beam etching rate lower than that of a material of said free layer.

6. The magnetoresistive effect element as claimed in claim 4, wherein said free layer is made of a material selected from a group consisting of a CoFe alloy, a NiFe alloy, and a multilayer film of a CoFe alloy and a NiFe alloy, and wherein said cap layer is made of a Ta film.

7. A magnetoresistive effect element comprising: a substrate having an element formation surface;a lower electrode layer formed on said element formation surface;a foundation layer formed on said lower electrode layer;a magneto-sensitive portion formed on said foundation layer, having a pinned layer, a free layer, and a non-magnetic intermediate layer sandwiched between said pinned layer and said free layer;a cap layer formed on said magneto-sensitive portion;an upper magnetic pole layer formed on said cap layer; anda bias layer formed on both side surfaces of said magneto-sensitive portion along the track-width direction with an insulating layer being provided between each of said side surface and said bias layer,a multilayer which includes said foundation layer, said magneto-sensitive portion and said cap layer, having an upper side surface along the track-width direction forming an inclination angle θC to said element formation surface; an intermediate side surface along the track-width direction forming an inclination angle θS to said element formation surface; and a lower side surface along the track-width direction forming an inclination angle θU to said element formation surface,said inclination angle θC being greater than both of said inclination angles θS and θU,a boundary between said upper side surface and said intermediate side surface being located above a side surface of said non-magnetic intermediate layer along the track-width direction, anda boundary between said intermediate side surface and said lower side surface being located below a side surface of said non-magnetic intermediate layer along the track-width direction.

8. The magnetoresistive effect element as claimed in claim 7, wherein said cap layer is made of a material having an ion beam etching rate lower than that of a material of said free layer.

9. The magnetoresistive effect element as claimed in claim 7, wherein said free layer is made of a material selected from a group consisting of a CoFe alloy, a NiFe alloy, and a multilayer film of a CoFe alloy and a NiFe alloy, and wherein said cap layer is made of a Ta film.

10. A thin-film magnetic head comprising at least one magnetoresistive effect element for reading data comprising: a substrate having an element formation surface;a lower electrode layer formed on said element formation surface;a foundation layer formed on said lower electrode layer;a magneto-sensitive portion formed on said foundation layer, having a pinned layer, a free layer, and a non-magnetic intermediate layer sandwiched between said pinned layer and said free layer;a cap layer formed on said magneto-sensitive portion,an upper electrode layer formed on said cap layer; anda bias layer formed on both side surfaces of said magneto-sensitive portion along the track-width direction with an insulating layer being provided between each of said side surface and said bias layer,a inclination angle θS formed by a side surface of said magneto-sensitive portion along the track-width direction to said element formation surface, being greater than both of a inclination angle θC formed by a side surface of an upper portion of said cap layer along the track-width direction to said element formation surface and a inclination angle θU formed by a side surface of a lower portion of said foundation layer along the track-width direction to said element formation surface.

11. The thin-film magnetic head as claimed in claim 10, wherein said cap layer is made of a material having an ion beam etching rate lower than that of a material of said free layer.

12. The thin-film magnetic head as claimed in claim 10, wherein said free layer is made of a material selected from a group consisting of a CoFe alloy, a NiFe alloy, and a multilayer film of a CoFe alloy and a NiFe alloy, and wherein said cap layer is made of a Ta film.

13. A thin-film magnetic head comprising at least one magnetoresistive effect element for reading data comprising: a substrate having an element formation surface;a lower electrode layer formed on said element formation surface;a foundation layer formed on said lower electrode layer;a magneto-sensitive portion formed on said foundation layer, having a pinned layer, a free layer, and a non-magnetic intermediate layer sandwiched between said pinned layer and said free layer;a cap layer formed on said magneto-sensitive portion;an upper magnetic pole layer formed on said cap layer; anda bias layer formed on both side surfaces of said magneto-sensitive portion along the track-width direction with an insulating layer being provided between each of said side surface and said bias layer,a multilayer which includes said foundation layer, said magneto-sensitive portion and said cap layer, having an upper side surface along the track-width direction forming an inclination angle θC to said element formation surface; an intermediate side surface along the track-width direction forming an inclination angle θS to said element formation surface; and a lower side surface along the track-width direction forming an inclination angle θU to said element formation surface,said inclination angle θC being greater than both of said inclination angles θS and θU,a boundary between said upper side surface and said intermediate side surface being located above a side surface of said non-magnetic intermediate layer along the track-width direction, anda boundary between said intermediate side surface and said lower side surface being located below a side surface of said non-magnetic intermediate layer along the track-width direction.

14. The thin-film magnetic head as claimed in claim 13, wherein said cap layer is made of a material having an ion beam etching rate lower than that of a material of said free layer.

15. The thin-film magnetic head as claimed in claim 13, wherein said free layer is made of a material selected from a group consisting of a CoFe alloy, a NiFe alloy, and a multilayer film of a CoFe alloy and a NiFe alloy, and wherein said cap layer is made of a Ta film.

16. A head gimbal assembly comprising: a thin-film magnetic head comprising at least one magnetoresistive effect element for reading data comprising:a substrate having an element formation surface;a lower electrode layer formed on said element formation surface;a foundation layer formed on said lower electrode layer;a magneto-sensitive portion formed on said foundation layer, having a pinned layer, a free layer, and a non-magnetic intermediate layer sandwiched between said pinned layer and said free layer;a cap layer formed on said magneto-sensitive portion,an upper electrode layer formed on said cap layer; anda bias layer formed on both side surfaces of said magneto-sensitive portion along the track-width direction with an insulating layer being provided between each of said side surface and said bias layer,a inclination angle θS formed by a side surface of said magneto-sensitive portion along the track-width direction to said element formation surface, being greater than both of a inclination angle θC formed by a side surface of an upper portion of said cap layer along the track-width direction to said element formation surface and a inclination angle θU formed by a side surface of a lower portion of said foundation layer along the track-width direction to said element formation surface; anda support structure for supporting said thin-film magnetic head.

17. The head gimbal assembly as claimed in claim 16, wherein said cap layer is made of a material having an ion beam etching rate lower than that of a material of said free layer.

18. The head gimbal assembly as claimed in claim 16, wherein said free layer is made of a material selected from a group consisting of a CoFe alloy, a NiFe alloy, and a multilayer film of a CoFe alloy and a NiFe alloy, and wherein said cap layer is made of a Ta film.

19. A head gimbal assembly comprising: a thin-film magnetic head comprising at least one magnetoresistive effect element for reading data comprising:a substrate having an element formation surface;a lower electrode layer formed on said element formation surface;a foundation layer formed on said lower electrode layer;a magneto-sensitive portion formed on said foundation layer, having a pinned layer, a free layer, and a non-magnetic intermediate layer sandwiched between said pinned layer and said free layer;a cap layer formed on said magneto-sensitive portion;an upper magnetic pole layer formed on said cap layer; anda bias layer formed on both side surfaces of said magneto-sensitive portion along the track-width direction with an insulating layer being provided between each of said side surface and said bias layer,a multilayer which includes said foundation layer, said magneto-sensitive portion and said cap layer, having an upper side surface along the track-width direction forming an inclination angle θC to said element formation surface; an intermediate side surface along the track-width direction forming an inclination angle θS to said element formation surface; and a lower side surface along the track-width direction forming an inclination angle θU to said element formation surface,said inclination angle θC being greater than both of said inclination angles θS and θU,a boundary between said upper side surface and said intermediate side surface being located above a side surface of said non-magnetic intermediate layer along the track-width direction, anda boundary between said intermediate side surface and said lower side surface being located below a side surface of said non-magnetic intermediate layer along the track-width direction; anda support structure for supporting said thin-film magnetic head.

20. The head gimbal assembly as claimed in claim 19, wherein said cap layer is made of a material having an ion beam etching rate lower than that of a material of said free layer.

21. The head gimbal assembly as claimed in claim 19, wherein said free layer is made of a material selected from a group consisting of a CoFe alloy, a NiFe alloy, and a multilayer film of a CoFe alloy and a NiFe alloy, and wherein said cap layer is made of a Ta film.

22. A magnetic recording and reproducing apparatus comprising: at least one head gimbal assembly comprising:a thin-film magnetic head comprising at least one magnetoresistive effect element for reading data comprising:a substrate having an element formation surface;a lower electrode layer formed on said element formation surface;a foundation layer formed on said lower electrode layer;a magneto-sensitive portion formed on said foundation layer, having a pinned layer, a free layer, and a non-magnetic intermediate layer sandwiched between said pinned layer and said free layer;a cap layer formed on said magneto-sensitive portion,an upper electrode layer formed on said cap layer; anda bias layer formed on both side surfaces of said magneto-sensitive portion along the track-width direction with an insulating layer being provided between each of said side surface and said bias layer,a inclination angle θS formed by a side surface of said magneto-sensitive portion along the track-width direction to said element formation surface, being greater than both of a inclination angle θC formed by a side surface of an upper portion of said cap layer along the track-width direction to said element formation surface and a inclination angle θU formed by a side surface of a lower portion of said foundation layer along the track-width direction to said element formation surface; anda support structure for supporting said thin-film magnetic head;at least one magnetic disk; anda recording/reproducing means for controlling read and write operations of said thin-film magnetic head to said at least one magnetic disk.

23. The magnetic recording and reproducing apparatus as claimed in claim 22, wherein said cap layer is made of a material having an ion beam etching rate lower than that of a material of said free layer.

24. The magnetic recording and reproducing apparatus as claimed in claim 22, wherein said free layer is made of a material selected from a group consisting of a CoFe alloy, a NiFe alloy, and a multilayer film of a CoFe alloy and a NiFe alloy, and wherein said cap layer is made of a Ta film.

25. A magnetic recording and reproducing apparatus comprising: at least one head gimbal assembly comprising:a thin-film magnetic head comprising at least one magnetoresistive effect element for reading data comprising:a substrate having an element formation surface;a lower electrode layer formed on said element formation surface;a foundation layer formed on said lower electrode layer;a magneto-sensitive portion formed on said foundation layer, having a pinned layer, a free layer, and a non-magnetic intermediate layer sandwiched between said pinned layer and said free layer;a cap layer formed on said magneto-sensitive portion;an upper magnetic pole layer formed on said cap layer; anda bias layer formed on both side surfaces of said magneto-sensitive portion along the track-width direction with an insulating layer being provided between each of said side surface and said bias layer,a multilayer which includes said foundation layer, said magneto-sensitive portion and said cap layer, having an upper side surface along the track-width direction forming an inclination angle θC to said element formation surface; an intermediate side surface along the track-width direction forming an inclination angle θS to said element formation surface; and a lower side surface along the track-width direction forming an inclination angle θU to said element formation surface,said inclination angle θC being greater than both of said inclination angles θS and θU,a boundary between said upper side surface and said intermediate side surface being located above a side surface of said non-magnetic intermediate layer along the track-width direction, anda boundary between said intermediate side surface and said lower side surface being located below a side surface of said non-magnetic intermediate layer along the track-width direction; anda support structure for supporting said thin-film magnetic head;at least one magnetic disk; anda recording/reproducing means for controlling read and write operations of said thin-film magnetic head to said at least one magnetic disk.

26. The magnetic recording and reproducing apparatus as claimed in claim 25, wherein said cap layer is made of a material having an ion beam etching rate lower than that of a material of said free layer.

27. The magnetic recording and reproducing apparatus as claimed in claim 25, wherein said free layer is made of a material selected from a group consisting of a CoFe alloy, a NiFe alloy, and a multilayer film of a CoFe alloy and a NiFe alloy, and wherein said cap layer is made of a Ta film.