TECHNICAL FIELD
The invention relates to the field of manufacturing of semiconductor devices, in particular to a thin film piezoelectric acoustic wave resonator and a manufacturing method thereof, and a filter.
BACKGROUND
Acoustic wave resonators based on piezoelectric induction are divided into a surface acoustic wave resonator (SAWR) and a bulk acoustic wave resonator (BAWR), which are the basic elements of radial frequency filters, and the radial frequency filter is a core device of the wireless communication radial frequency front end and base station system nowadays. The bulk acoustic wave resonator has excellent characteristics of low insertion loss, high quality factor and the like, especially has obvious advantages at the frequency of more than 2.0 GHz compared with the surface acoustic wave resonator.
As shown in FIG. 1, the traditional film bulk acoustic resonator (FBAR) consists of a thin film piezoelectric plate body R40 arranged on a base R10, and a first electrode plate R30 and a second electrode plate R50 of which the first surface R41 and the second surface R42 are physically “welded” together, and the overlapping part of the first electrode plate R30 and the second electrode plate R50 is placed above a cavity R20 on the base. Under the action of the alternating electric field generated by the upper second electrode plate, bulk acoustic wave elastic vibration in a longitudinal direction R1 and a transverse direction R2 will be generated in and on the surface of the thin piezoelectric plate body R40. Since the first electrode plate R30 and the second electrode plate R50 are physically “welded” on the first surface R41 and the second surface R42 of the thin film piezoelectric plate body R40, the bulk acoustic wave elastic vibration will naturally be transmitted to the first electrode plate R30 and the second electrode plate R50 and be propagated outwards along the first electrode plate R30 and the second electrode plate R50. Therefore, quite a part of the bulk acoustic wave elastic vibration and its energy generated on the piezoelectric plate body R40 through the action of the alternating electric field generated by the first electrode plate R30 and the second electrode plate R50 will be dissipated out of the piezoelectric plate body and consumed. In particular, when the thickness of the piezoelectric plate body R40 is reduced (higher longitudinal resonant frequency has been obtained), and the area of the piezoelectric plate body R40, the first electrode plate R30 and the second electrode plate R50 are increased, the proportion of the consumed bulk acoustic wave increases, thereby further negatively affecting the performance of the bulk acoustic wave resonator. However, under the basic device structure of the traditional and existing bulk acoustic wave resonators, it is inevitable that the bulk acoustic wave dissipates from the piezoelectric plate body R40 to the first electrode plate R30 and the second electrode plate R50 to result in the loss of the bulk acoustic wave vibration energy. In addition, longitudinal acoustic wave oscillation is reflected on the upper and lower interfaces R41 and R42 of the first electrode plate R30, the second electrode plate R50 and the piezoelectric plate body R40, and the interfaces R31 and R51 of the first electrode plate R30, the second electrode plate R50 and the air, and the generated subharmonic wave will also become a part of noise. Moreover, due to the presence of the first electrode plate R30 and the second electrode plate R50, the piezoelectric induction resonant frequency not only depends on the thickness and the longitudinal acoustic wave velocity of the piezoelectric plate body, but also on the influence of the acoustic wave reflection and the elastic stiffness of the second electrode. The negative influence from the basic structure of the device will be further aggravated with the further increase of the required resonant frequency and the further reduction of the thickness of the piezoelectric plate body. Furthermore, two thin film electrodes are in direct contact with a piezoelectric thin film layer. On one hand, due to different physical properties of different materials, including difference change of the physical properties of the material caused by temperature change, residual stress, and interface reflection on longitudinal and transverse acoustic waves will generate at the interface; and on the other hand, the acoustic wave in the piezoelectric thin film layer is propagated into the thin film electrode, resulting in loss of the acoustic wave energy.
The thickness of the piezoelectric plate body, electrode or dielectric layer and the sound velocity therein change with the temperature change, so the resonant frequency of the piezoelectric acoustic wave resonator changes with the temperature change. At present, most of materials applied to the piezoelectric acoustic wave resonator show negative temperature coefficient of sound velocity, that is, the sound velocity will decrease with the increase of the temperature. For example, the temperature coefficient of sound velocity of aluminum nitride is −25 ppm/° C., and the sound velocity temperature coefficient of molybdenum is −60 ppm/° C. The radio frequency (RF) filter formed by the piezoelectric acoustic wave resonator generally has a passband frequency response, the temperature coefficient of frequency (TCF) of the piezoelectric acoustic wave resonator will reduce the manufacturing yield of the RF filter because equipment or a device formed by the piezoelectric acoustic wave resonator only can meet the requirement of passband bandwidth within a certain temperature range. In the application of most of required duplexers, in order to meet the requirement in a wider temperature range, low temperature coefficient of frequency is very important.
As shown in FIG. 2, the improved thin film bulk acoustic wave resonator includes: a first electrode R520 located on a base R110, a piezoelectric layer R140 located above the first electrode R520, a second electrode R160 located above the piezoelectric layer R140 and an acoustic reflection structure R115 located below the first electrode R140, wherein at least one gap R530 or R150 is formed between the second electrode R160 and the first electrode 140, the gap at least partially covers an effective region (the effective region is an overlapping region of the first electrode R1220, the second electrode R160 and the piezoelectric layer R140 in a thickness direction) of the thin film bulk acoustic wave resonator, and a projection in a vertical direction all falls within the acoustic reflection structure R115. The improved thin film bulk acoustic wave resonator may effectively eliminate longitudinal acoustic wave generated by the piezoelectric layer R140 from being directly transmitted to the second electrode (that is, the first electrode R520 and the second electrode R160) in a longitudinal direction R101; however, in a horizontal direction R102, due to the physical effect of the piezoelectric material of the piezoelectric layer R140, the longitudinal bulk acoustic wave generated under the action of the alternating electric field of the upper second electrode will inevitably lead to transverse bulk acoustic wave vibration and be propagated to the boundary of the effective region to form partial reflection, but it is inevitable that quite a part of transverse acoustic wave is propagated to the piezoelectric layer and the upper second electrode outside the effective region to be consumed. In addition, a structure that the upper second electrode and the piezoelectric layer include a gap (at least one gap R530 or R150) disclosed by the improved resonator is formed by chemically releasing a sacrificial layer (such as silicon oxide), wherein a height of the gap is given to be between 1 nm and 500 nm. Generally, a size of the effective region is tens of microns or even larger, so it is quite difficult to remove all the sacrificial layer materials effectively through chemical release.
Therefore, how to improve the physical difference of a contact interface between the piezoelectric thin film and the thin film electrode and reduce the loss of acoustic wave energy in the acoustic wave piezoelectric thin film caused by the electrode, and how to provide a better method for forming the bulk acoustic wave resonator are the main problems at present.
SUMMARY
The present invention discloses a thin film piezoelectric acoustic wave resonator and a manufacturing method therefor, and a filter. The problems in the prior art that residual stress exists on the contact interface of the piezoelectric thin film and the electrode and the acoustic wave is leaked from the electrode and the piezoelectric thin film are solved.
To solve the above technical problem, the present invention provides a thin film piezoelectric acoustic wave resonator, including:
a first base, wherein the first base is internally provided with a reflection structure;
a first electrode, a piezoelectric plate body and a second electrode, arranged on a first surface of the first base and stacked sequentially from top to bottom,
wherein the first electrode, the piezoelectric plate body and the second electrode are provided with an overlapping region in a direction perpendicular to the surface of the piezoelectric plate body, and
in the overlapping region, a gap is formed between the piezoelectric plate body and the first electrode; and
an isolation cavity, surrounding the periphery of the piezoelectric plate body, wherein at least one connecting bridge is arranged between the piezoelectric plate body and the base, and
wherein the gap communicates with the isolation cavity.
The present invention further provides a filter, including a plurality of the resonators.
The present invention further provides a manufacturing method for a thin film piezoelectric acoustic wave resonator. The manufacturing method includes:
providing a first substrate;
forming a first electrode on the first substrate;
forming a laminated structure on the first electrode, wherein the laminated structure comprises: a piezoelectric plate body which is provided with a first surface and a second surface opposite to each other, a first sacrificial layer located on the first surface of the piezoelectric plate body, and a second sacrificial layer located at the periphery of the piezoelectric plate body, the first sacrificial layer being located on the surface of the first surface, and the first sacrificial layer and the second sacrificial layer being connected together;
forming a second electrode on the laminated structure;
removing the first sacrificial layer and the second sacrificial layer to form a gap located between the piezoelectric plate body and the first electrode, and an isolation cavity located at the periphery of the piezoelectric plate body;
providing a first base, wherein the first base is internally provided with a reflection structure; and
bonding the second electrode and the first base, wherein the first electrode, the piezoelectric plate body and the second electrode are provided with an overlapping region in a direction perpendicular to the surface of the first substrate, the gap and the reflection structure are at least partially located in the overlapping region, and the overlapping region is defined as an effective working region.
Beneficial effects of the present invention are as follows:
according to the present invention, in the effective working region of the thin film acoustic wave resonator, a tiny gap is formed between the piezoelectric plate body and the first electrode, the electric field of the second electrode may pass through the gap and may be applied to the piezoelectric plate body, the isolation cavity is formed at the periphery of the piezoelectric plate body, and the second electrode supports the piezoelectric plate body. The problems that residual stress exists on the contact interface of the piezoelectric plate body and the first electrode and the acoustic wave energy is leaked from the boundary of the piezoelectric plate body and the electrode are solved. In addition, the gap between the piezoelectric plate body and the first electrode forms a reflection interface of acoustic wave. When longitudinal acoustic wave in the piezoelectric plate body is propagated to the air interface where the gap is located, the acoustic wave is reflected back into the piezoelectric plate body, thereby reducing loss of the longitudinal acoustic wave. The isolation cavity exposes the boundary of the piezoelectric plate body in the air. When transverse acoustic wave of the piezoelectric plate body is transmitted to the boundary of the piezoelectric plate body, the air interface in the isolation cavity reflects the acoustic wave back into the piezoelectric plate body, thereby reducing loss of transverse acoustic wave.
Further, the isolation cavity, the gap and the cavity communicate with each other, thereby increasing the contact area of the piezoelectric plate body and the air interface, reducing the loss of acoustic wave energy better and improving the quality factor of the resonator.
Further, part of the boundary of the second electrode is cut off in the region surrounded by the isolation cavity, and the second electrode has no overlapping region with the first electrode in the vertical direction, thereby reducing the parasitic effect.
Further, the cap layer is arranged on the surface of the electrode (such as the first electrode) provided with the through hole to isolate the cavity from the external environment, such that the piezoelectric layer and the tiny gap may be protected from being affected by external substances. In addition, the cap layer and the first electrode are combined to enhance the structural strength of the first electrode and increase the yield of the resonators.
Further, at the first conductive plug side, the upper second electrode does not have an opposite part, thereby avoiding parasitic effect; and the second conductive plug electrically connects the upper second electrode outside the effective working region of the resonator, such that the upper second electrode is short-circuited and there is no potential difference above and below the piezoelectric plate body, thereby reducing the parasitic effect of the overlapping region (the first electrode, the piezoelectric plate body and the second electrode) outside the effective resonance region.
Further, the first active micro-device and/or the first passive micro-device are integrated in the first base, so that the integration degree of the device may be increased.
Further, the sacrificial layers in the gap and the isolation cavity are all made of amorphous carbon, and the through hole is formed above the sacrificial layer material, so that the sacrificial material may be removed at one time conveniently.
Further, an acoustic wave temperature coefficient compensation layer with a positive temperature coefficient is arranged on the upper or lower surface of or in the piezoelectric plate body so as to reduce the change of the frequency of the resonator with the change of the temperature, control the thickness of the acoustic wave temperature coefficient compensation layer and make the resonator realize temperature compensation without reducing an electromechanical coupling coefficient as much as possible.
According to the present invention, the method for forming the resonator is high in process reliability and simple in flow.
BRIEF DESCRIPTION OF THE DRAWINGS
By describing the exemplary embodiments of the present invention below in more detail in combination with the accompanying drawings, the above and other objectives, characteristics and advantages of the present invention will be more apparent. In the exemplary embodiments of the present invention, the same reference numeral typically represents the same component.
FIG. 1 shows a structural schematic diagram of an existing thin film piezoelectric acoustic wave resonator.
FIG. 2 shows a structural schematic diagram of another existing thin film piezoelectric acoustic wave resonator.
FIG. 3 shows a three-dimensional schematic diagram of a thin film piezoelectric acoustic wave resonator according to a first embodiment of the present invention, which mainly shows the main three-layer structure of the resonator.
FIG. 4 is a sectional view of FIG. 3 along an X-X direction.
FIG. 5 shows a structural schematic diagram of a thin film piezoelectric acoustic wave resonator according to another embodiment of the present invention.
FIG. 6 shows a structural schematic diagram of a thin film piezoelectric acoustic wave resonator according to another embodiment of the present invention.
FIG. 7 shows a structural schematic diagram of a thin film piezoelectric acoustic wave resonator according to another embodiment of the present invention.
FIG. 8 shows a structural schematic diagram of a setting position of a through hole according to another embodiment of the present invention.
FIG. 9 shows a structural schematic diagram of a thin film piezoelectric acoustic wave resonator according to another embodiment of the present invention.
FIG. 10 shows a structural schematic diagram of a thin film piezoelectric acoustic wave resonator according to a second embodiment of the present invention.
FIG. 11 shows a flowchart of a manufacturing method for a thin film piezoelectric acoustic wave resonator according to an embodiment of the present invention.
FIG. 12 to FIG. 25 show structural schematic diagrams corresponding to different steps of a manufacturing method for a thin film piezoelectric acoustic wave resonator according to a first embodiment of the present invention.
FIG. 26 shows a structural schematic diagram in the manufacturing process of a thin film piezoelectric acoustic wave resonator according to a second embodiment of the present invention.
DESCRIPTION OF REFERENCE NUMERALS
In FIG. 1: R10—base; R20—cavity; R30—first electrode plate; R50—second electrode plate; R40—thin film piezoelectric plate body; R41—first surface; R42—second surface; R31—air interface; R51—air interface.
In FIG. 2: R110—base; R520—first electrode; R140—piezoelectric layer; R160—second electrode; R115—acoustic reflection structure; R530—gap; R150—gap; R141—air interface; R142—air interface.
In FIG. 3 to FIG. 26: 50—first base, 41—first dielectric layer; 31—second dielectric layer; 30—piezoelectric plate body; 21—third dielectric layer; 20—first electrode; 40—second electrode; 61—first conductive plug; 62—second conductive plug; 63—third conductive plug; 33—trench; 34—third sacrificial layer; 35—first sacrificial layer; 36—acoustic wave temperature compensation plate body; 211—gap; 23—second sacrificial layer; 300—isolation cavity; 301—connecting bridge; 302—end part; 303—effective working region outer side; 13—through hole; 14—isolation groove; 12—top film layer; 11—third dielectric layer; 110—cap layer; 32—first groove; 22—groove; 60—first base; 70—micro-device; 71—MIM capacitor; 72—MOS transistor; 73—electrical inductor; 500—semiconductor substrate; 510—dielectric layer; 520—cavity; 530—Bragg structure.
DESCRIPTION OF THE EMBODIMENTS
The present invention will be further described below in detail with reference to the accompanying drawings and the specific embodiments. According to the following description and the accompanying drawings, the advantages and features of the present invention will be clearer. However, it should be noted that the concept of the technical solution of the present invention may be implemented according to various different forms, and is not limited to the specific embodiments described herein. The accompanying drawings all adopt very simplified forms and use inaccurate scale, which are only used for conveniently and clearly assisting in describing the objective of the embodiment of the present invention.
It should be understood that when an element or layer is referred to as “on”, “adjacent to”, “connected to” or “coupled to” other elements or layers, the element or layer may be directly on, adjacent to, connected to or coupled to other elements or layers, or there may be an element or layer between the element or layer and other elements or layers. On the contrary, when an element is referred to as “directly on”, “directly adjacent to”, “directly connected to” or “directly coupled to” other elements or layers, there is no element or layer between the element or layer and other elements or layers. It should be understood that although terms first, second, third, etc. may be used to describe various elements, parts, regions, layers and/or portions, these elements, parts, regions, layers and/or portions should not be limited by these terms. These terms are only used to distinguish one element, part, region, layer or portion from another element, part, region, layer or portion. Therefore, without departing from the instruction of the present invention, a first element, part, region, layer or portion discussed below may be represented as a second element, part, region, layer or portion.
Spatial relationship terms such as “under”, “below”, “over”, “above”, etc. may be used herein for the convenience of description so as to describe a relationship between one element ore feature shown in the drawings and other elements or features. It should be understood that in addition to an orientation shown in the drawings, the spatial relationship terms are intended to further include different orientations of devices during use and operation. For example, if devices in the drawings are turned over, an element or feature which is described to be “below” or “under” other elements or features will be oriented to be “above” other elements or features. Therefore, exemplary terms “under” and “below” may include upper and lower orientations. Devices may be otherwise oriented (rotating by 90 degrees or adopting other orientations), and spatial description words used therein are accordingly explained.
The terms used herein are only intended to describe the specific embodiments and not to limit the present invention. When used herein, the singular forms “a”, “an” and “the” are also intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that terms “comprise” and/or “include”, when used in the specification, are used to determine the presence of the feature, integer, step, operation, element and/or part, but do not exclude the presence or addition of more other features, integers, steps, operations, elements, parts and/or groups. When used herein, the term “and/or” includes any and all combinations of related listed items.
If the method of the present invention includes a series of steps, the order of these steps presented herein is not necessarily the only order in which these steps may be performed, and some steps may be omitted and/or some other steps not described herein may be added to the method. If elements in a certain drawing are as same as elements in other drawings, these elements may be easily identified, but in order to make the description of the drawings clearer, the description will not mark the reference numerals of all the same elements in each drawing.
Embodiment I, a first thin film piezoelectric acoustic wave resonator:
An embodiment of the present invention provides a thin film piezoelectric acoustic wave resonator. FIG. 3 shows a simplified three-dimensional schematic diagram of a thin film piezoelectric acoustic wave resonator according to an embodiment of the present invention. FIG. 4 is a sectional view of FIG. 3 along an X-X direction. Referring to FIG. 3 and FIG. 4, the thin film piezoelectric acoustic wave resonator includes:
a first base 50, wherein the first base 50 is internally provided with a reflection structure;
a first electrode 20, a piezoelectric plate body 30 and a second electrode 40, arranged on a first surface of the first substrate and stacked sequentially from top to bottom,
wherein the first electrode 20, the piezoelectric plate body 30 and the second electrode 40 are provided with an overlapping region in a direction perpendicular to the surface of the piezoelectric plate body 30, the overlapping region is located above a cavity, and in the overlapping region, a gap 211 is formed between the piezoelectric plate body 30 and the first electrode 20; and an isolation cavity 300, surrounding the periphery of the piezoelectric plate body 30,
wherein the gap 211 communicates with the isolation cavity 300.
The working principle of the bulk acoustic wave resonator is that the piezoelectric plate body 30 generates vibration under the alternating electric field, the vibration excites bulk acoustic wave propagated along a thickness direction of the piezoelectric plate body 30, and the acoustic wave is reflected back when being propagated to the reflection interface so as to be reflected back and forth in the piezoelectric plate body 30 to form oscillation. When the acoustic wave is propagated in the piezoelectric plate body 30 exactly at odd times of half wavelength, standing wave oscillation is formed. The overlapping region of the first electrode 20, the piezoelectric plate body 30 and the second electrode 40 in a direction perpendicular to the surface of the piezoelectric plate body 30 is a region where bulk acoustic wave is generated, which is referred to as the effective working area hereinafter. In this embodiment, at least one connecting bridge 301 (shown in a dashed box) is arranged between the piezoelectric plate body 30 and the first base 50.
Referring to FIG. 4, when a radio frequency alternating voltage signal is applied to the first electrode 20 and the second electrode 40, a power line needs to pass through the piezoelectric plate body 30 and the gap 211; therefore, the height of the gap 211 is critical, generally between 0.1 nm and 5 microns. Specifically, the most suitable height of the gap 211 is based on the principle that the first electrode 20 and the piezoelectric plate body 30 can realize maximum piezoelectric interactive induction, and it is necessary to ensure that the upper surface of the piezoelectric plate body 30 will not touch the first electrode 20 when the piezoelectric plate body 30 generates piezoelectric acoustic wave vibration. Too large gap will weaken the coupling between the first electrode and the piezoelectric plate body; and too small gap will lead to the acoustic wave vibration of the piezoelectric plate body, especially the vibration in the vertical direction, resulting in that the piezoelectric plate body touches the surface of the first electrode. The gap 211 and the reflection structure form the reflection interface of the acoustic wave. When the longitudinal acoustic wave in the piezoelectric plate body 30 is propagated to the air interface where the gap 211 is located and the reflection structure, the acoustic wave will be reflected back into the piezoelectric plate body 30, thereby reducing the loss of the longitudinal acoustic wave and improving the quality factor of the resonator. The fact that the gap 211 is located in the effective working region may be understood that: the gap 211 is formed in partial region of the effective working region, or the gap 211 is formed in the whole effective working region.
The isolation cavity 300 is configured to separate the piezoelectric plate body 30, so that all or part of the edge of the piezoelectric plate body 30 is exposed in the isolation cavity 300. When the acoustic wave is transmitted to the boundary of the piezoelectric plate body 30, the acoustic wave is reflected back into the piezoelectric plate body 30 by the air interface of the isolation cavity 300, thereby reducing transverse leakage of the acoustic wave and improving the quality factor of the resonator. The shape of the edge of the piezoelectric plate body 30 exposed in the isolation cavity 300 includes an arc or a straight line, for example, the shape of the edge may consist of one or more arcs, or be a combination of the arc and the straight line, or consist of a plurality of straight lines. The edge of the piezoelectric plate body 30 mentioned herein is an edge of the piezoelectric plate body 30 located in the effective working region. The piezoelectric plate body in the effective working region may be optionally an irregular polygon, and any two sides of the polygon are not parallel.
In an embodiment, referring to FIG. 5, the isolation cavity 300 is a continuous whole body and surrounds all the edge of the piezoelectric plate body 30. That is, the isolation cavity 300 exposes all the periphery of the piezoelectric plate body. At this time, the second electrode provides support for the piezoelectric plate body. In another embodiment, referring to FIG. 4, the isolation cavity 300 is a continuous whole body and surrounds the edge of part of the piezoelectric plate body 30, and at least one connecting bridge is arranged between the piezoelectric plate body and the base. A part of the piezoelectric plate body not surrounded by the isolation cavity 300 and extending above the first base 50 forms the connecting bridge 301. In another embodiment, the isolation cavity 300 includes a plurality of spaced sub-cavities, and a part of the piezoelectric plate body 30 between the adjacent sub-cavities extending above the first base 50 forms a connecting bridge 301. The connecting bridge is configured to connect and fix the piezoelectric plate body 30 on the first base 50. The distribution and shape of the connecting bridge may be based on the fact that the piezoelectric plate body 30 may be stably supported. There are many forms, for example, the isolation cavity 300 enables the edge of the piezoelectric plate body 30 to form a pentagon, and the connecting bridge 301 is located at five vertex angles of the pentagon. In another embodiment, the isolation cavity may also be a cavity which is closed along a circumferential direction. In this case, the connecting bridge may span over the isolation cavity and is connected between the piezoelectric plate body and the first base. At this time, the periphery of the piezoelectric plate body is in contact with the air, such that leakage acoustic wave leakage may be avoided better. In this embodiment, the isolation cavity 300 and the gap 211 communicate with each other. When the isolation cavity 300 and the gap 211 are formed, it is necessary to fill a sacrificial layer therein. When two spaces communicate with each other, the sacrificial layers in the two spaces may be removed at one time, thereby simplifying the process flow. In addition, the isolation cavity 300 and the gap 211 communicate with each other, such that the contact area of the piezoelectric plate body 30 and the air interface is increased, the loss of the acoustic wave energy may be reduced well, and the quality factor of the resonator may be improved.
The thickness of the piezoelectric plate body 30 is 0.01 micron to 10 microns, and different thicknesses may be selected according to the specific set frequency. A material of the piezoelectric plate body 30 may be oxide, nitride or carbide, for example: aluminum nitride (AlN) and zinc oxide (ZnO), and may also be a piezoelectric crystal or piezoelectric ceramic, for example: a piezoelectric material with a wurtzite crystalline structure such as lead zirconate titanate (PZT), lithium niobate (LiNbO3), quartz, potassium niobate (KNbO3), lithium tantalate (LiTaO3), lithium gallate, lithium germanate, titanium germanate or lead zinc sphene, etc., and combination thereof. When the piezoelectric plate body 102 includes aluminum nitride (AlN), the piezoelectric plate body 102 may further include rare earth metal, for example, at least one of scandium (Sc), erbium (Er), yttrium (Y) and lanthanum (La). In addition, when the piezoelectric plate body 102 includes the aluminum nitride (AlN), the piezoelectric plate body 102 may further include transition metal, for example, at least one of scandium (Sc), zirconium (Zr), titanium (Ti), manganese (Mn) and hafnium (Hf).
Referring to FIG. 4, in this embodiment, the first dielectric layer 41 is arranged on the first surface of the first base 50, the second electrode 40 is embedded in the first dielectric layer 41, and the first surface of the second electrode 40 is exposed; and an end part 302 of the second electrode 40 and the isolation cavity 300 have an overlapping part. Part of the edge of the second electrode is located inside or outside a region range surrounded by the isolation cavity in the direction perpendicular to the surface of the piezoelectric plate body. FIG. 4 shows that the end part 302 of the second electrode 40, namely part of the boundary is completely located below the isolation cavity.
In an embodiment, referring to FIG. 7, a release through hole is formed in the first dielectric layer 41, the release through hole communicates with the isolation cavity 300, and the cavity 520 of the first base 50 communicates with the release through hole; therefore, the cavity 520 communicates with the isolation cavity through the release through hole. Specifically, the first dielectric layer 41 wraps the second electrode 40 for protecting the second electrode 40. The end part 302 of the second electrode 40 is located below the isolation cavity 300, that is, part of the boundary of the second electrode 40 is cut off in the region surrounded by the isolation cavity 300. At this time, an effective working region outer side 303 (a region in a broken line in the figure) does not have an overlapping region with the first electrode 20 in the vertical direction, thereby reducing parasitic effect. In addition, when the acoustic wave is transmitted into the second electrode 40 and the acoustic wave in the second electrode 40 is transmitted to the end part, located below the isolation cavity 300, of the second electrode 40, the interface of the first dielectric layer reflects the acoustic wave back into the second electrode 40, thereby reducing loss of the acoustic wave and improving the quality factor of the resonator.
Continuously referring to FIG. 8, in this embodiment, at least one through hole 13 is formed in the first electrode 20 above the gap 211, a cap layer 110 is arranged on the first surface of the first electrode 20, and the cap layer 110 fills the through hole 13. The through hole 13 is a sacrificial hole for releasing the sacrificial layers filled in the gap and the isolation cavity. Referring to FIG. 4, in another embodiment, since the gap 211 and the isolation cavity 300 communicate with each other, the through hole 13 may only penetrate through a structure above the isolation cavity 300.
In this embodiment, the cap layer 110 is a composite structure, and includes a third dielectric layer 11 and a top film layer 12 located on a first surface of the third dielectric layer 11. The third dielectric layer 11 and the top film layer 12 are made of insulating materials. The material of the fourth dielectric layer 11 may be silicon dioxide or silicon nitride, and the material of the top film layer 12 may be an organic cured film. In this embodiment, the through hole 13 penetrates through the third dielectric layer 11 at the same time, and the third dielectric layer 11 is configured to protect the first electrode 20 when the resonator is manufactured. The material of the top film layer 12 may be an organic cured film or a silicon dioxide layer. On one hand, the top film layer 12 is configured to seal the through hole 13; and on the other hand, the top film layer 12 may enhance the supporting function on the first electrode 20. A dielectric layer is arranged between the first electrode 20 at the outer side of the gap 211 and the piezoelectric plate body 30, or the first electrode 20 is in contact with the piezoelectric plate body 30. Specifically, referring to FIG. 4, in this embodiment, a second dielectric layer 21 is arranged between the first electrode 20 and the piezoelectric plate body 30, the gap 211 is located in the second dielectric layer 21, and the second dielectric layer 21 defines a region range of the gap 211. The second dielectric layer 21 is provided so as to make the piezoelectric plate body 30 exposed in the gap 211 be flush with the second surface of the piezoelectric plate body 30 not exposed in the gap 211. The height of the second dielectric layer 21 determines the height of the gap 211. The materials of the first dielectric layer 41, the second dielectric layer 21 and the third dielectric layer 11 described above include silicon dioxide or silicon nitride.
The first base 50 may be a semiconductor substrate, or a semiconductor substrate or a dielectric layer thereon. The dielectric layer is a film layer formed on the semiconductor substrate when other device structures are formed on the semiconductor substrate. The first base 50 is internally provided with a reflection structure, and the reflection structure is a cavity or a Bragg reflection structure. In this embodiment, referring to FIG. 4, the reflection structure is a cavity; and the first substrate includes a semiconductor substrate 500 and a dielectric layer 510 located on the semiconductor substrate 500, and the cavity is located in the dielectric layer 510. In another embodiment, the cavity may also be located in the semiconductor substrate. In other embodiments, as shown in FIG. 6, the first base 50 includes a semiconductor substrate 500 and a dielectric layer above the semiconductor substrate 500, and the reflection structure is located on the dielectric layer or in the dielectric layer. The reflection structure is a Bragg reflection structure, and the Bragg reflection structure 530 includes a plurality of dielectric layers and a metal layer located between the adjacent dielectric layers.
A material of the semiconductor substrate may be at least one of the following mentioned materials: silicon (Si), germanium (Ge), silicon-germanium (SiGe), silicon carbide (SiC), carbon silicon-germanium (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP) or other III/V compound semiconductors, or may be silicon-on-insulator (SOI), superposed silicon-on-insulator (SSOI), superposed silicon-germanium-on-insulator (S-SiGeOI) and germanium-on-insulator (GeOI), or may also be double side polished wafers (DSP), or may also be a ceramic base, quartz or glass base of aluminum oxide, etc. A material of the dielectric layer 510 includes: silicon oxide, silicon nitride, silicon carbide, silicon oxycarbide, silicon oxynitride, aluminum oxide, aluminum nitride or boron nitride.
In this embodiment, at the periphery of the region surrounded by the isolation cavity 300 and the gap 211, the first electrode 20 and the second electrode 40 are staggered at a side where the part of edge is located, and an opposite side of the part of the edge is provided with an opposite part. The resonator further includes: a first conductive plug 61, connected to the first electrode 20 at the staggered side and penetrating through a structure above the first electrode 20 at the other side, opposite to the base, of the first electrode 20; and a second conductive plug 62, connected to the second electrode 40 at a side with the opposite part and penetrating the structure above the first electrode 20 at the other side, opposite to the base, of the second electrode 40.
In this embodiment, the first conductive plug 61 is located outside the effective working region, and there is no opposite part between the upper second electrode at a side where the first conductive plug 61 is located, so parasitic effect between the upper second electrode is avoided. Further, on one hand, the second conductive plug 62 plays a role in electrically connecting the second electrode 40 with the outside, and on the other hand, the second conductive plug is also electrically connected with the first electrode 20 at the side surface; therefore, the upper second electrode outside the effective working region of the resonator is electrically connected, such that the upper second electrode is short-circuited and there is no potential difference above and below the piezoelectric plate body 30, thereby reducing the parasitic effect of the overlapping region (the first electrode, the piezoelectric plate body and the second electrode) outside the effective resonance region, and improving the quality factor of the resonator. Based on the above description, in this embodiment, the whole resonator basically has not parasitic capacitance effect in all the noneffective regions, which is very helpful for improving the performance of the resonator.
Referring to FIG. 9, in another embodiment of the present invention, the thin film piezoelectric acoustic wave resonator further includes an acoustic wave temperature compensation plate body 36, wherein the acoustic wave temperature compensation plate body 36 may be located on the first or second surface of the piezoelectric plate body 30, or located in the piezoelectric plate body 30; and the figure shows the situation where the acoustic wave temperature compensation plate body is located on the first surface. The acoustic wave temperature compensation plate body 36 has a positive temperature coefficient and is made of a material such as boron-doped silicon dioxide. The placement of the acoustic wave temperature compensation plate body 36 reduces the electromechanical coupling coefficient of the resonator. The large the thickness is, the greater the influence on the electromechanical coupling efficient is. In this embodiment, the optional range of the thickness is 5 nm to 500 nm. The electromechanical coupling coefficient of the resonator is not reduced as much as possible while temperature compensation is realized.
Moreover, continuously referring to FIG. 9, in this embodiment, the first base 50 includes a semiconductor substrate 500 and a dielectric layer 110 located on the semiconductor substrate, and a first active micro-device and/or a first passive micro-device are arranged in the first base 50. The first active micro-device includes one or a combination of a diode, a triode, an MOS transistor and an electrostatic discharge (ESD) protector. FIG. 9 shows an MOS transistor 72. Other devices are selected according to the actual requirements. The MOS transistor may form a radio frequency subsystem such as a radio frequency switch, a low noise amplifier and the like so as to realize short-distance interconnection with the filter, which may contribute to reducing signal insertion loss and interference caused by interconnection. The first passive micro-device includes a resistor, a capacitor or an electrical inductor, or a combination thereof. FIG. 9 shows an MIM capacitor 71 and an electrical inductor 73. Furthermore, the MOS transistor 72, the MIM capacitor 71 and the electrical inductor 73 in the figure are interconnected in a certain manner. In this way, short-distance interconnection with the filter is realized. The first passive micro-device may achieve more excellent in-situ impedance matching with the filter. In order to electrically connect the first active micro-device and/or the first passive micro-device 70 with the resonator, in this embodiment, the resonator further includes: a third conductive plug 63 located in a noneffective region, wherein one end of the third conductive plug is connected to the first active micro-device and/or the first passive micro-device, and the other end of the third conductive plug penetrates through a structure above the micro-device (referring to FIG. 9); the third conductive plug, the first conductive plug and the second conductive plug are connected through other interconnection structure on the cap layer so as to realize electrical connection of the micro-device and the upper second electrode; however, it is not limited to this connection mode, the other end of the third conductive plug 63 may also be connected to the first or second electrode, and the first active micro-device and/or the first passive micro-device are electrically connected to the first electrode 20 or the second electrode 40 through the third conductive plug 63. In the figure, the first active micro-device and the first passive micro-device are indicated in a simplified form. It is necessary to set what kind of devices specifically needing to be included and the interconnection relationship between them according to the actual situation.
Embodiment II, a second thin film piezoelectric acoustic wave resonator:
referring to FIG. 10, the main difference between this embodiment and the embodiment I is that: a dielectric layer may not be arranged between the piezoelectric plate body 30 and the upper electrode 20, the upper electrode 20 exposed above the second gap 211 is not flush with the bottom surface of the upper electrode 20 not exposed above the second gap 211, and the lower surface of the upper electrode 20 not exposed above the second gap 211 is in direct contact with the upper surface of the piezoelectric plate body 30. At this time, the height of the gap 211 is determined by the thickness of the sacrificial layer formed on the first electrode 20. Refer to embodiment I for other parts not described.
Embodiment III, a method for forming a first thin film piezoelectric acoustic wave resonator:
the third embodiment of the present invention provides a manufacturing method for a thin film piezoelectric acoustic resonator. FIG. 8 shows a flowchart of a manufacturing method for a thin film piezoelectric acoustic wave resonator according to an embodiment of the present invention. FIG. 9 to FIG. 25 show structural schematic diagrams of different stages of a manufacturing method for a thin film piezoelectric acoustic wave resonator according to an embodiment of the present invention. Referring to FIG. 8, the manufacturing method includes:
S01: a first substrate is provided and an first electrode is formed on the first substrate; S02: a laminated structure is formed on the first electrode, wherein the laminated structure includes: a piezoelectric plate body, a first sacrificial layer located on a first surface of the piezoelectric plate body and a second sacrificial layer with a second surface located at the periphery of the piezoelectric plate body, and the first sacrificial layer and the second sacrificial layer are connected together; S03: a second electrode is formed on the laminated structure; and S04: the first sacrificial layer and the second sacrificial layer are removed to form a gap of the second electrode located between the piezoelectric plate body and the first electrode, and an isolation cavity located at the periphery of the piezoelectric plate body, wherein the first electrode, the piezoelectric plate body and the second electrode are provided with an overlapping region in a direction perpendicular to the surface of the first substrate, the gap is at least partially located in the overlapping region, and the overlapping region is defined as an effective working region.
The manufacturing method for the thin film piezoelectric acoustic wave resonator will be described below with reference to FIG. 11 to FIG. 25. FIG. 11 to FIG. 25 are structural schematic diagrams corresponding to each step in an embodiment of a manufacturing method for a thin film piezoelectric acoustic wave resonator in the present invention.
Referring to FIG. 11 and FIG. 12, the step S01 is performed, the first substrate 10 is provided, and the first electrode 20 is formed on the first substrate 10. Referring to FIG. 12, in this embodiment, the first electrode is the entire conductive layer, and the process for forming the first electrode through patterning is completed in the subsequent process. Before the first electrode 20 is formed, the method further includes: a third dielectric layer 11 is formed on the first substrate 10, the first substrate 10, as a temporary bearing layer, needs to be removed in the later process, and the third dielectric layer 11 plays an isolation role and is configured to isolate the first substrate 10 and the first electrode 20. In another embodiment, the first electrode is an electrode after the conductive layer is patterned, the first electrodes between each adjacent resonators are mutually disconnected, and the noneffective region and the effective region of the first electrode are mutually disconnected. The method for forming the first electrode includes: an upper conductive thin film is formed on the first substrate; and the upper conductive thin film is patterned to form the first electrode, wherein the end part of the first electrode and the second sacrificial layer formed in the subsequent process have an overlapping part.
A material of the first substrate 10 may be one of the following mentioned materials: silicon (Si), germanium (Ge), silicon-germanium (SiGe), silicon carbide (SiC), carbon silicon-germanium (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP) or other III/V compound semiconductors, or may be silicon-on-insulator (SOI), superposed silicon-on-insulator (SSOI), superposed silicon-germanium-on-insulator (S-SiGeOI) and germanium-on-insulator (GeOI), or may also be double side polished wafers (DSP), or may also be a ceramic base, quartz or glass base of aluminum oxide, etc. A material of the third dielectric layer 11 may include silicon dioxide or silicon nitride.
Referring to FIG. 13, the upper conductive thin film is formed above the surface of the third dielectric layer 11, and the upper conductive thin film may be formed by a physical vapor deposition or chemical vapor deposition method such as magnetron sputtering, evaporation and the like. In this embodiment, the upper conductive film layer is not patterned to form the first electrode after the upper conductive film layer is formed, and the patterning process of the upper conductive film layer is completed later. In other embodiments, after the upper conductive film layer is formed, the upper conductive film layer is directly patterned to form the first electrode 20. The first electrode 20 may be made of one or alloy of molybdenum (Mo), aluminum (Al), copper (Cu), tungsten (W), tantalum (Ta), platinum (Pt), ruthenium (Ru), rhodium (Rh), iridium (Ir), chromium (Cr), titanium (Ti), gold (Au), osmium (Os), rhenium (Re), palladium (Pd), platinum, nickel and the like.
Referring to FIG. 14 to FIG. 19, the step S02 is performed, and the laminated structure is formed on the first electrode 20. The laminated structure includes: a piezoelectric plate body 30 which is provided with a first surface and a second surface opposite to each other, a first sacrificial layer 23 located on the first surface of the piezoelectric plate body 30 and a second sacrificial layer 34 located at the periphery of the piezoelectric plate body 30, wherein the first sacrificial layer is located on the surface of the first electrode, and the first sacrificial layer and the second sacrificial layer are connected together.
In this embodiment, the step of forming the laminated structure includes the following steps: S21: the second sacrificial layer 23 and the second dielectric layer 21 are formed on the first electrode 20, wherein the second dielectric layer 21 defines the range of the second sacrificial layer 23; and S22: the piezoelectric plate body 30 and the second sacrificial layer 34 of the piezoelectric plate body 30 all or partially surrounding the overlapping region are formed on the second sacrificial layer 23 and the second dielectric layer 21.
Specifically, the step S21 includes: 1. Referring to FIG. 14, a second dielectric thin film is formed on the surface of the first electrode 20, and the second dielectric thin film is patterned to form a groove 22 penetrating through the second dielectric thin film, wherein the second dielectric thin film outside the groove 22 is the second dielectric layer 21. 2. Referring to FIG. 15, a first sacrificial thin film covering the groove 22 and the third dielectric layer 21 is formed, the first sacrificial thin film is patterned to remove the first sacrificial thin film above the third dielectric layer 21 and make the upper surface of the first sacrificial thin film in the groove be flush with the upper surface of the second dielectric layer 21. The first sacrificial thin film in the groove 22 forms the first sacrificial layer 23.
Specifically, the second dielectric thin film is formed on the surface of the first electrode 20 through physical vapor deposition or chemical vapor deposition. The third dielectric thin film is patterned by an etching process to form the groove 22 penetrating through the third dielectric thin film. The second dielectric thin film outside the groove 22 forms the second dielectric layer 21. A region where the groove 22 is located is a formation region of the gap in the later process. The first sacrificial thin film is formed in the groove 22 and on the second dielectric layer 21 through a vapor deposition process (including evaporation, sputtering and chemical vapor deposition) or a liquid deposition process (including electroplating), and the first sacrificial thin film above the second dielectric layer 21 is removed by the etching process. The first sacrificial thin film in the groove 22 forms the first sacrificial layer 23. In this embodiment, the method for making the first surface of the second sacrificial thin film be flush with the first surface of the third dielectric layer 21 includes: the surface of the first sacrificial thin film in the groove 22 is subjected to ion beam trimming by an ion beam trimming process, so that a ratio of a height of a micro protrusion or depression at the first surface of the first sacrificial layer 23 to a thickness of the first sacrificial layer 23 is less than 0.1%. In the later process, it is necessary to form the piezoelectric plate body on the first surface of the first sacrificial layer 23, the flatness of the second surface of the piezoelectric plate body affects the overall performance of the resonator, and the flatness of the surface of the first sacrificial layer 23 affects the flatness of the second surface of the piezoelectric plate body. Therefore, the first surface of the first sacrificial layer 23 is subjected to ion beam trimming, such that the performance of the resonator may be improved.
It should be noted that the first sacrificial thin film above the second dielectric layer 21 is removed through etching and photoresist needs to serve as a mask. After the etching process is completed, it is necessary to remove the photoresist. In the process of removing the photoresist, the photoresist is removed by a wet process, for example, the photoresist is removed by a mixed solution of sulfuric acid and hydrogen peroxide. The first sacrificial layer 23 may be removed at the same time when the photoresist is removed by a dry process.
The step S22 includes: 1. Referring to FIG. 16, a piezoelectric induction thin film is formed on the first sacrificial layer 23 and the second dielectric layer 21. 2. Referring to FIG. 17, the piezoelectric induction thin film is patterned to form a trench 33 for disconnecting the piezoelectric induction thin film and the piezoelectric plate body 30, wherein the bottom of the trench 33 exposes part of the first sacrificial layer 23. In this embodiment, a part, not disconnected by the trench 33, of the piezoelectric induction thin film forms the connecting bridge 301, the trench 33 cuts the piezoelectric induction thin film to form the piezoelectric plate body 30, part of the end part of the piezoelectric plate body 30 is exposed in the trench 33, the trench 33 is configured to form an isolation cavity in the later process, and the shapes and positions of the trench 33 and the piezoelectric plate body 30 are referenced to a relationship between the isolation cavity and the piezoelectric plate body in the first embodiment, which is not elaborated here. In another embodiment, the trench 33 exposes all the periphery of the piezoelectric plate body 30. 3. Referring to FIG. 18, the second sacrificial layer 34 is formed in the trench 33. Specifically, the piezoelectric induction thin film 30 with a thickness of 0.01 micron to 10 microns is formed on the first sacrificial layer 23 and the second dielectric layer 21 through physical vapor deposition or chemical vapor deposition, and a material of the piezoelectric induction thin film refers to the above. In this embodiment, after the piezoelectric induction thin film is formed, the method further includes: the first surface of the piezoelectric induction thin film is subjected to flatness trimming through an ion beam trimming process, such that a ratio of the height of the micro-protrusion or depression of the first surface of the piezoelectric induction thin film to the thickness of the piezoelectric induction thin film is less than 0.1%. The flatness of the first and second surfaces of the piezoelectric plate body affects the overall performance of the resonator, and the performance of the resonator may be improved by performing ion beam trimming on the first surface of the piezoelectric plate body 30.
The bottom of the trench 33 exposes part of the first sacrificial layer 23, such that the gap formed in the later process communicates with the isolation cavity. When the trench 33 is an unsealed trench, a part, not disconnected by the trench 33, of the piezoelectric induction thin film forms the connecting bridge 301. The shape and position functions of the connecting bridge 301 are referenced to the above.
Referring to FIG. 18, the method for forming the second sacrificial layer 34 includes: initial second sacrificial layers are formed in the trench 33 and on the piezoelectric induction plate body 30; and the initial second sacrificial layer on the piezoelectric plate body 30 is removed, the initial second sacrificial layer in the trench is remained to serve as a second sacrificial layer, the upper surface of the second sacrificial layer in the trench is flush with the upper surface of the piezoelectric plate body 30, and the second sacrificial layer is formed in the trench 33. In this embodiment, the method for making the upper surface of the second layer in the trench be flush with the upper surface of the piezoelectric plate body 30 includes: the surface of the initial second sacrificial layer in the trench is subjected to flatness trimming by the ion beam trimming process, such that a ratio of the height of the micro protrusion or depression at the upper surface of the second sacrificial layer 34 to the thickness of the second sacrificial layer 34 is less than 0.1%. Since the material of the second sacrificial layer 34 will affect the quality of the piezoelectric induction thin film relative to the piezoelectric induction thin film at the periphery if a CPM process is adopted, the ion beam trimming process may avoid damage to the piezoelectric induction thin film, and the thickness of the sacrificial layer may be controlled better. In this embodiment, materials of the first sacrificial layer and the second sacrificial layer include any one of phosphorosilicate glass, boron phosphorosilicate glass, germanium, carbon, low-temperature silicon dioxide and polyimide.
Referring to FIG. 19, a second electrode 40 is formed on the laminated structure. A lower conductive thin film is formed on the second sacrificial layer 34 and the piezoelectric plate body 30 through a magnetron sputtering process, and the lower conductive thin film is patterned to form the second electrode 40. In this embodiment, the second electrode 40 covers the surface of the second sacrificial layer 34. The second electrode 40 covers all the surface of the second sacrificial layer 34, then the subsequently formed isolation cavity is not in contact with the subsequently formed reflection structure. In this embodiment, referring to FIG. 19, part of the end part of the second electrode 40 is cut off above the second sacrificial layer 34. The effect of the setting mode is referenced to the above. Specifically, a pattern of the second electrode 40 may be set according to the actual requirement. For example, various situations described in the above first embodiment are not limited to that part of the boundary shown in FIG. 19 is cut off above the third sacrificial layer.
Referring to FIG. 20, after the second electrode 40 is formed, the method further includes: a first dielectric layer 41 is formed to cover the second electrode 40. Specifically, the first dielectric layer 41 is formed above the surface of the second electrode 40 through a deposition process, and the top surface of the first dielectric layer 41 is flush through a planarization process. In this embodiment, the first dielectric layer 41 covers the second electrode 40. In one embodiment, the top surface of the first dielectric layer 41 is flush with the top surface of the second electrode 40, the first dielectric layer 41 is internally provided with a release through hole, and the release through hole exposes the second sacrificial layer 34. Continuously referring to FIG. 20, the first substrate 10 is removed after the first base 60 is bonded on the first dielectric layer 41; the first base 50 includes: a semiconductor substrate 500 or a dielectric layer 510 on the semiconductor substrate 500; and the first base 50 is internally provided with a reflection structure, and the reflection structure includes a cavity or a Bragg reflection structure. In this embodiment, the reflection structure is a cavity 520, and the cavity 520 is located in the dielectric layer 510 on the semiconductor substrate 500. In other embodiments, the cavity 520 is located in the semiconductor substrate 500. In another embodiment, when the reflection structure is the Bragg reflection structure, the first base 50 includes: a semiconductor substrate and a Bragg reflection structure located on the semiconductor substrate, and the Bragg reflection structure includes a plurality of dielectric layers and a metal layer located between the adjacent dielectric layers. In yet another embodiment, the dielectric layer is formed on the second electrode, and the reflection structure is formed in the dielectric layer; and the first base is provided and the first base is bonded with the dielectric layer. The reflection structure may be a cavity, or may also be a Bragg reflection structure. When the reflection structure is the cavity, the method for forming the reflection structure includes: the dielectric layer is formed on the second electrode; a cavity opening is formed in the dielectric layer, wherein the cavity opening exposes all or part of the surface of the second electrode; and after the cavity opening is formed, the dielectric layer is bonded with the first base, wherein the first base is a semiconductor substrate. In another embodiment, the dielectric layer is formed on the first dielectric layer 41, and a cavity opening penetrating through the fourth dielectric layer is formed in the dielectric layer; a third sacrificial layer is formed in the cavity opening; and the first base 60 is bonded on the fourth dielectric layer.
Referring to FIG. 21, the entire conductive layer is patterned to form the first electrode 20, wherein the first electrodes 20 between each adjacent resonators are mutually disconnected, and the noneffective region and the effective region of the first electrode 20 are mutually disconnected. Referring to FIG. 21, when the first electrode 20 is formed through patterning, a through hole 13 serving as a sacrificial hole is formed through etching, and an isolation groove 14 is formed between two resonators. The first sacrificial layer and the second sacrificial layer are removed to form a gap 211 located between the piezoelectric plate body 30 and the first electrode 20, and an isolation cavity 300 located at the periphery of the piezoelectric plate body 30. In this embodiment, removing the sacrificial layer specifically includes the following steps:
referring to FIG. 21 to FIG. 23, at least one through hole 13 penetrating through a film layer above the second sacrificial layer and/or the third sacrificial layer is formed, the first sacrificial layer, the second sacrificial layer and the third sacrificial layer are converted into volatile gas through gas-phase chemical reaction to be discharge from the through hole, or the first sacrificial layer or the second sacrificial layer is dissolved through liquid chemical reaction to be discharged from the through hole. Referring to FIG. 21, the through hole 13 penetrates through a structure above the second sacrificial layer. Referring to FIG. 22, the through hole penetrates through a structure above the second sacrificial layer. In this embodiment, a third dielectric layer 11 is arranged on the surface of the first electrode 20 with the through hole 13, and the through hole 13 penetrates through the third dielectric layer 11 at the same time. After the first sacrificial layer and the second sacrificial layer are removed, the gap 211 exposes the first surface of the piezoelectric plate body 30, and the part of the edge of the piezoelectric plate body 30 is exposed in the isolation cavity 300. In another embodiment, in the process of removing the first sacrificial layer and the second sacrificial layer, the third sacrificial layer in the first dielectric layer 41 and the dielectric layer 510 is also removed to form a cavity, and the cavity communicates with the isolation cavity 300. Refer to FIG. 7. It should be note that when the through hole 13 is formed, an isolation groove 14 is formed between the two resonators, thereby realizing electrical isolation between the adjacent two resonators.
Referring to FIG. 24, a top film layer 12 is formed on the third dielectric layer 11, the top film layer 12 seals the through hole, and the material and effect of the top film layer 12 are referenced to the above. In this embodiment, the third dielectric layer 11 and the top film layer 12 jointly form the cap layer. It will not be elaborated herein.
Referring to FIG. 25, in this embodiment at the periphery of a region surrounded by the isolation cavity 300 and the gap 211, the first electrode 20 and the second electrode 40 are staggered at the side where the part of the edge is located, and an opposite side of the part of the edge is provided with an opposite part. The method further includes: a first conductive plug 61 is formed, wherein the first conductive plug 61 is connected to the first electrode 20 at the staggered side and penetrates through a structure above the first electrode 20 at the other side, opposite to the first substrate, of the first electrode 20; and a second conductive plug 62 is formed, wherein the second conductive plug 62 is connected to the second electrode 40 at the side with the opposite part and penetrates through the structure above the first electrode 20 at the other side, opposite to the first substrate, of the second electrode 40. In this embodiment, the structure above the first electrode 20 includes a top film layer 12 and a third dielectric layer 11. The first conductive plug 61 penetrates through the top film layer 12 and the third dielectric layer 11, and the first conductive plug 61 is electrically connected to the first electrode 20. A structure above the second electrode 40 includes: the top film layer 12 and the third dielectric layer 11, the first electrode 20, the third dielectric layer 21, the piezoelectric plate body 30 and the second dielectric layer 31, the second conductive plug 62 penetrates through the top film layer 12 and the third dielectric layer 11, the first electrode 20, the third dielectric layer 21, the piezoelectric plate body 30 and the second dielectric layer 31, and the second conductive plug 62 is connected to the second electrode 40. The first conductive plug 61 and the second conductive plug 62 are located outside the effective working region of the resonator. The second conductive plug 62 electrically connects the first electrode with the second electrode in the noneffective working region, wherein the first electrode 20 electrically connected to the second conductive plug 62 is separated from the first electrode in the effective working region. The second conductive plug 62 enables the piezoelectric plate body in the noneffective working region not to generate voltage difference up and down, thereby reducing parasitic effect.
Referring to FIG. 9, in another embodiment, a first active micro-device and/or a first passive micro-device is formed in the dielectric layer 510 in the first base 50, wherein the first active micro-device includes a diode, an MOS transistor and a simple semiconductor electrostatic discharge protection device, and the first passive micro-device includes a resistor, a capacitor or an electrical inductor. The method further includes: a third conductive plug 63 is formed, and the first active micro-device and/or the first passive micro-device are electrically connected to the first electrode 20 or the second electrode 40 through the third conductive plug 63. Different first active micro-device and/or first passive micro-device may be integrated according to the design requirement. The first active micro-device and/or the first passive micro-device are integrated in the first base, such that the integration degree of the device can be increased, and the insertion loss and the anti-interference performance can be improved while the volume of the whole integrated radio frequency micro-system can be shortened.
According to the method for forming the third conductive plug 63 illustrated in FIG. 9, the third conductive plug 63 may be formed after the first conductive plug and the second conductive plug are formed, or the third conductive plug 63 may be formed before the first conductive plug and the second conductive plug are formed. This embodiment performs description by taking the case where the first electrode 20 is formed on the first substrate and is not patterned as an example. In the present invention, the first electrode 20 may be an electrode which is patterned and formed on the first substrate. At this time, the cap layer and the through hole released as a sacrificial layer are not formed on the first electrode 20, but should be formed on the second electrode 40.
Therefore, in the present invention, the method for removing the first sacrificial layer and the second sacrificial layer includes: at least one through hole penetrating through a film layer above the sacrificial layer far away from the remained substrate is formed, for example, in the first embodiment, the sacrificial layer is the first sacrificial layer. The first electrode on the first substrate is not patterned, and at this time, it is necessary to remove the first substrate and remain the first base; and when the first electrode on the first substrate is patterned, the remained substrate is the first substrate and the first base is not required. In the absence of the first base, the sacrificial layer is the second sacrificial layer. The cap layer is formed on the surface of the electrode where the through hole is formed, and the cap layer fills the through hole. When the remained substrate is the first substrate, the through hole is formed in the second electrode, and the cap layer is formed on the second electrode.
Referring to FIG. 26, in another embodiment, the step that a dielectric layer is not arranged on the second surface of the piezoelectric plate body and a laminated structure is formed includes: a first sacrificial layer 23 is formed on the first electrode 20; a piezoelectric induction thin film is formed to cover the first electrode 20, the second sacrificial layer 23 and the first substrate 10; the piezoelectric induction thin film is patterned to form a trench which disconnects the piezoelectric induction thin film, the bottom of the trench exposes part of the first sacrificial layer 23, and a part, not disconnected by the trench, of the piezoelectric induction thin film forms a connecting bridge; a third sacrificial layer 34 is formed in the trench, and the first surface of the third sacrificial layer 34 is flush with the first surface of the piezoelectric plate body 30; a first sacrificial thin film is formed to cover the second sacrificial layer 34 and the piezoelectric plate body 30; and the first sacrificial thin film is patterned, the first sacrificial thin film outside a second region is removed, the second region is located in the effective working region, and the first sacrificial thin film at the second region forms the first sacrificial layer 35.
Specifically, the first sacrificial thin film is formed on the first electrode 20, the first sacrificial thin film covers the first electrode 20, the first sacrificial thin film is patterned to form the first sacrificial layer 23, the first sacrificial layer 23 is located in the effective working region, and the position of the first sacrificial layer 23 is configured to form the gap. The thickness of the first sacrificial layer is the height of the gap 211, and the optional range is 0.1 nm to 5 nm. A material of the first sacrificial layer 23 is referenced to the above. A piezoelectric induction thin film is formed on the first sacrificial layer 23 and the first electrode 20 through the deposition process, the thickness of the piezoelectric induction thin film is between 0.1 micron and 10 microns, and a material of the piezoelectric induction thin film is referenced to the above. The trench which disconnects the piezoelectric induction thin film is formed in the piezoelectric induction thin film through the etching process. The trench defines the boundary of the edge of the piezoelectric plate body 30. In this embodiment, the bottom of the trench exposes part of the first sacrificial layer 23, and a part, not disconnected by the trench, of the piezoelectric induction thin film forms a connecting bridge. The shape and distribution of the trench, the shape of the piezoelectric plate body 30, and the position of the connecting bridge are as same as those of the above embodiment, which is not elaborated herein. The second sacrificial thin film is formed to cover the trench and the first surface of the piezoelectric plate body 30, and the second sacrificial thin film outside the trench is removed to form the second sacrificial layer 34. The first sacrificial thin film is formed to cover the second sacrificial layer 34 and the first surface of the piezoelectric plate body 30, the first sacrificial thin film is patterned, the first sacrificial thin film outside the second region is removed, the second region is located in the effective working region, the second region is a region where the gap is located, and the first sacrificial thin film at the second region forms the first sacrificial layer 35. The material and thickness of the first sacrificial thin film are referenced to the material and thickness of the third sacrificial thin film.
Other information about the removal of the sacrificial layer and the formation of the cap layer is referenced to the relevant description in the method i the above embodiment.
It should be noted that each embodiment in the specification is described by a relevant mode, the same or similar part between each embodiment may refer to each other, and each embodiment focuses on the difference from other embodiments. In particular, for the structural embodiment which is basically similar to the method embodiment, the description is relatively simple, and the relevant points are referenced to the partial description of the method embodiment.
The above description is only the description of the preferred embodiment of the present invention and does not constitute any limitation to the scope of the present invention. Any changes and modifications made by those of ordinary skill in the field of the present invention according to the content disclosed above shall fall within the protection scope of the claims.
Patent Application
20220321093
