Thin film resistor element

Abstract

A thin film resistor element is provided with a tantalum nitride (TaN) layer on an upper surface of a substrate, a tantalum pentoxide (Ta2O5) layer disposed on the tantalum nitride layer, and two electrode layers separately disposed on the tantalum pentoxide layer or on both ends of the tantalum nitride layer and the tantalum pentoxide layer. The thin film resistor element of the present invention can reduce the oxidation rate of the resistor layer to maintain a constant resistance value at high temperatures generated during use.

Description

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a thin film resistor element, particularly to a thin film resistor element with high temperature resistance.

2. Description of the Prior Art

A thin film resistor element could be damaged under a high temperature, because its resistor layer is oxidized.

Today, the electronic devices keep operating to generate heat and that damages the resistor element. Except for using the heat dissipation elements, the thin-film resistor element should be able to resist to high temperature. The invention proposes a solution to provide a thin-film resistor element with a high-temperature resistance.

SUMMARY OF THE INVENTION

The present invention provides a thin-film resistor element that can operate under a high temperature.

A thin film resistor element comprises a tantalum nitride (TaN) layer disposed on an upper surface of a substrate, a tantalum pentoxide (Ta₂O₅) layer disposed on the TaN layer to substantially cover the TaN layer, and an electrode layer separately disposed at two ends to form two electrodes, wherein the electrode layer is on the TaN layer or on the Ta₂O₅ layer and electrically connects to both layers.

Below, the embodiments, accompanied with the attached drawings, are employed to explain the objectives, technical contents, characteristics and accomplishments of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic side sectional view of a thin film resistor element according to an embodiment of the present invention.

FIG. 2 is a schematic side sectional view of a thin film resistor element according to another embodiment of the present invention.

FIG. 3 is a schematic side sectional view of a thin film resistor element according to another embodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Below, the embodiments accompanied with drawings are used to explain the present invention in detail for exemplify the present invention but not to limit the scope of the present invention. These embodiments also applies to other embodiments and vice versa. Any modification, variation, or substitution according to the spirit of the present invention should also be included within the scope of the patent, which is defined by the claims.

FIG. 1 is a schematic side sectional view of a thin film resistor element according to an embodiment of the present invention. The thin film resistor comprises a substrate 11, a TaN layer 13 on the substrate as a resistor layer, a Ta₂O₅ layer 14 on TaN layer 13 as a transition metal layer, and an electrode layer 12 at both sides of the thin film resistor to form two electrodes.

The TaN layer 13 substantially covers the upper surface of the substrate 11 and the Ta₂O₅ layer 14 substantially covers the TaN layer. The TaN layer 13 and the Ta₂O₅ layer 14 could be formed by bonding, sputtering, plating, evaporation, or printing and it is noted that they are made in the same reaction chamber. The thickness of the Ta₂O₅ layer 14 is about 50-200 nanometers (nm).

Both electrodes, formed by the electrode layer 12, are separately connected to both ends of the TaN layer 13 and the Ta₂O₅ layer 14. The electrode layer 12 are disposed on the Ta₂O₅ layer 14 in this embodiment shown in FIG. 1. In another embodiment shown as FIG. 3, the electrode layer is disposed at both ends of the TaN layer 13 and the Ta₂O₅ layer 14 without overlapping. The two electrodes, formed by the electrode layer 12, can cover, partially cover, or contact without overlapping the Ta₂O₅ layer 14 and the TaN layer 13. In the above embodiment, both electrodes electrically connect with the Ta₂O₅ layer 14 and the TaN layer 13.

The embodiment shown in FIG. 2 and FIG. 3 uses the similar element number for the corresponding component of the embodiment shown above. Each of both electrodes extends along the side of the substrate 11 to a lower surface of the substrate 11.

The substrate 11 may be a ceramic substrate or other type of substrate. The substrate, in general, has a good property of heat dissipation, such as alumina, aluminum nitride, or other oxidized metal materials and so on. The substrate 11 is rectangular generally, but also could be made to other shapes.

A protection layer 15 could be formed on the Ta₂O₅ layer 14 but both electrodes are exposed from the protection layer.

In a high-temperature storage test, the temperature is set at 155° C. and the testing period is 1000 hours. With comparison to a conventional thin film resistor element, the thin film resistor element of the present invention has a smaller resistance variation, less than 0.1% in testing. The thin film resistor element of this invention has a stable resistance, because the Ta₂O₅ layer can be as a barrier layer to protect the TaN layer to be oxidized.

TABLE 1
Standard change ratio of resistance (ΔR): 155° C./1,000 hr
conventional thin film resistor element >0.5%
Thin film resistor element of the present invention <0.06%

In summary, a Ta₂O₅ layer formed on the TaN layer prevent the TaN oxidation in the thin film resistance element of the present invention. Therefore, the thin film resistor element still has a stable resistance under high temperature.

Claims

1. A thin film resistor element, comprising: a substrate;a TaN layer disposed on an upper surface of the substrate;a Ta2O5 layer disposed on the TaN layer, wherein a thickness of the Ta2O5 layer ranges from 50 to 200 nanometers (nm); andtwo electrodes made by an electrode layer separately disposed at both ends of the thin film resistor element, wherein the electrode layer is electrically connected to the TaN layer and the Ta2O5 layer.

2. The thin film resistor element according to claim 1, further comprising a protective layer, wherein the protection layer is disposed on the Ta2O5 layer but exposes the electrode layer.

3. The thin film resistor element according to claim 1, wherein each of the two electrodes extends along the side of the substrate to a lower surface of the substrate.

4. The thin film resistor element according to claim 1, wherein the electrode layer covers, partially covers or contacts without overlapping the TaN layer and the Ta2O5 layer.

5. The thin film resistor element according to claim 1, wherein the TaN layer and the Ta2O5 layer are formed by a bonding, sputtering or printing process.