This application claims the benefit of Korean Patent Application No. 10-2008-0117588 filed on Nov. 25, 2008 and No. 10-2009-0109860 filed on Nov. 13, 2009, the disclosure of which is hereby incorporated by reference in its entirety.
1. Field of the Invention
Embodiments of the invention relate to a thin film solar cell and a method of manufacturing the same.
2. Discussion of the Related Art
Nowadays, in order to solve the energy problem many are facing, various researches for a fuel that can replace existing fossil fuels have been advanced. Particularly, various researches for using natural and renewable energy such as a wind force, atomic energy, and solar energy to replace petroleum resources, for example, to be exhausted within several decades have been advanced.
Because a solar cell uses solar energy, which is a virtually infinite and, environmental-friendly energy source, unlike other energy sources, much research has been performed for the last several decades since a Se solar cell was developed in 1983. A currently commercialized solar cell using a monocrystal bulk silicon is not more widely used due to high production and installation costs.
In order to solve such a cost problem, research for a thin film solar cell is actively performed, and a large area solar cell can be manufactured at low cost via a technique for manufacturing a thin film solar cell using amorphous silicon (a-Si:H), and thus, interest has increased in the thin film solar cell using the amorphous silicon (a-Si:H).
In general, a thin film solar cell has a form in which a first electrode, an absorption layer, and a second electrode are stacked on a first substrate, and in order to improve the efficiency, an unevenness is formed on a surface of the first electrode. Conventionally, as a method of forming the unevenness on the surface of the first electrode, a chemical etching method using an acid/base solution has been used.
However, in order to use the chemical etching method, an etching solution should be changed according to a material of the first electrode that is used, and it is difficult to freely adjust the form of the unevenness. Further, there is a problem of waste processing of a waste acid/base etching solution after use, and thus, which requires an urgent solution.
Embodiments of the invention are directed to a thin film solar cell and a method of manufacturing the same that can easily form an unevenness, be environmental-friendly, and reduce or prevent an electrical characteristic of a solar cell from being deteriorated.
According to an embodiment of the invention, provided is a thin film solar cell including a substrate; a transparent layer positioned on the substrate and comprising a plurality of microlenses; a first electrode positioned on the transparent layer; an absorption layer to generate electron-hole pairs from incident light, and positioned on the first electrode; and a second electrode positioned on the absorption layer.
According to an embodiment of the invention, provided is a method of manufacturing a thin film solar cell including coating a resin on a substrate; forming a transparent layer comprising a plurality of microlenses from the coated resin by using a mold; forming a first electrode on the transparent layer; forming an absorption layer which generates electron-hole pairs from incident light on the first electrode; and forming a second electrode on the absorption layer.
According to an embodiment of the invention, provided is a thin film solar cell including a substrate; a transparent layer positioned on the substrate and comprising a plurality of periodic protrusions; a first electrode positioned on the transparent layer; an absorption layer to generate electron-hole pairs from incident light, and positioned on the first electrode; and a second electrode positioned on the absorption layer.
Other embodiments will be disclosed in the detailed description.
The accompany drawings, which provide a further understanding of the invention, which are incorporated and constitute a part of this specification, illustrate embodiments of the invention, and together with the description, serve to explain the principles of the invention.
a-2e are perspective views illustrating various forms of an uneven layer of a thin film solar cell according to an embodiment of the invention;
a to 5g are perspective views illustrating processes of a method of manufacturing a thin film solar cell according to an embodiment of the invention.
Reference will now be made in detail embodiments of the invention, examples of which are illustrated in the accompanying drawings.
The substrate 110 is made of glass or a transparent resin film. The glass uses a flat plate glass having silicon oxide (SiO2), sodium oxide (Na2O), and/or calcium oxide (CaO) having high transparency and insulating property as a main component.
The uneven layer 120 increases a light trapping effect by reducing or preventing total reflection of incident light and by enlarging light scattering, and thus performs a function of increasing the efficiency of the thin film solar cell 100.
Because the uneven layer 120 should transmit light, the uneven layer 120 is made of a light transparent resin. Here, the light transparent resin is made of an acryl-based monomer and may be formed with one selected from a group consisting of polyethylene terephthalate (PET), polycarbonate (PC), polypropylene (PP), polyethylene (PE), polystyrene (PS), and poly epoxy, but a material of the light transparent resin is not limited thereto.
The uneven layer 120 comprises the plurality of protrusions 125. The plurality of protrusions 125 may be periodically placed on the uneven layer 120, or may be formed together with the uneven layer 120 in a unitary fashion. The plurality of protrusions 125 may have various shapes, for example, a saw-toothed shape, a convex shape, a columnar shape, a pyramidal shape, a ridge shape, or other shapes. In one embodiment of the invention, the plurality of protrusions is microlenses 125. The microlens 125 may have a protruded form of an embossed hemispherical shape.
That is, as is shown in
However, as shown in
Further, the diameter d of the microlens 125 is about 1 to about 10 μm, but is not limited thereto. The height h of the microlens 125 is about ½ or less of a diameter d of the microlens 125. Further, a gap p between the microlenses 125 is about ¼ or less of the diameter d of the microlens 125, but is not limited thereto.
An occupying area of the microlens 125 is about 50 to about 90% or more of, for example, an entire area of the uneven layer 120, but is not limited thereto.
As described above, when the microlens 125 is formed in an embossed hemispherical shape, some of light applied from the outside, for example, a lower part of the microlens 125, is uniformly refracted in entire or all the orientation angles of the hemispherical shape to be transmitted in the microlens 125. Thereby, some of light applied from a lower part of the microlens 125 is uniformly diffused upward.
The first electrode 130 is made of a transparent conductive oxide or a metal. The transparent conductive oxide used may be an indium tin oxide (ITO), a tin oxide (SnO2), a zinc oxide (ZnO), or others. In embodiments of the invention, the transparent conductive oxide is ITO. The metal used may be silver (Ag), aluminum (Al), or others.
The first electrode 130 is formed with a single layer made of a transparent conductive oxide or a metal, but is not limited thereto and may be formed with a multiple layer in which two layers or more of a transparent conductive oxide/metal are stacked.
The absorption layer 140 is made of amorphous silicon and can have a pin structure. Here, the referred pin structure may be a stacked structure of a p+ type amorphous silicon layer/intrinsic-type amorphous silicon layer/n+ amorphous silicon layer.
Here, in the pin structure, when light, such as sun light, is applied, a silicon thin film layer absorbs the light and thus an electron-hole pair is generated. In the pin structure, by a built-in potential generated with a p-type and an n-type, the generated electrons and holes are moved to n-type and p-type semiconductors, respectively, and are used generate a current, for example.
In the embodiments of the invention, the absorption layer 140 is shown as only one layer, however the absorption layer 140 has a stacked structure formed with a p+ type amorphous silicon layer/intrinsic-type amorphous silicon layer/n+ amorphous silicon layer to generate electron-hole pairs, and to move the generated electrons and holes.
Like the first electrode 130, the second electrode 150 is made of a transparent conductive oxide or a metal. The transparent conductive oxide used may be indium tin oxide (ITO), tin oxide (SnO2), zinc oxide (ZnO), or others. In embodiments of the invention, the transparent conductive oxide is ITO. The metal used may be silver (Ag), aluminum (Al), or others.
The second electrode 150 is formed with a single layer made of a transparent conductive oxide or a metal, but is not limited thereto, and can be stacked with two layers or more of a transparent conductive oxide/metal.
Referring to
In more detail, focused light A among light applied through the substrate 110 is focused through a microlens of the uneven layer 120 and can be focused even in an interface of the first electrode 130. Therefore, due to a focusing effect of a microlens of the uneven layer 120, a focal depth of applied light is sustained and thus an effective light transmission effect can be obtained. Further, scattered light B among light applied through the substrate 110 can be scattered while being focused in an interface of a microlens of the uneven layer 120. Light transmitted the uneven layer 120 is again scattered while being focused in an interface of the first electrode 130 and light transmitted the first electrode 130 can be scattered while being focused again in an interface of the absorption layer 140. Therefore, due to scattering of applied light by a microlens of the uneven layer 120, a light path transferred to the absorption layer 140 largely increases, thereby improving electrical efficiency of a thin film solar cell.
Hereinafter, a method of manufacturing a thin film solar cell according to an embodiment of the invention will be described.
a to 5g are perspective views illustrating processes of a method of manufacturing a thin film solar cell according to an embodiment of the invention.
Referring to
The resin 215 is formed with an acryl-based monomer, but may be formed with one selected from a group consisting of polyethylene terephthalate (PET), polycarbonate (PC), polypropylene (PP), polyethylene (PE), polystyrene (PS), and poly epoxy.
Next, (b) a mold 220 is prepared or positioned on the substrate 210 in which the resin 215 is coated. In the mold 220, an inverse image of a microlens 225 is engraved. Because the inverse image of the microlens 225 engraved in the mold 220 determines a form of the microlens 225 to be formed in the resin 215, a diameter d and a height h of the microlens 225, and a gap p between the microlens 225 should be accurately designed.
Next, (c) an uneven layer 230 comprising a plurality of microlenses 225 is formed by being stamped with the mold 220 on the substrate 210 in which the resin 215 is coated. While the resin 215 is being stamped by the mold 220, ultraviolet (UV) light may be applied to the coated resin to set the microlenses 225. Then, once the mold 220 is removed, the set resin may be subjected to heat to further harden the microlenses 225. Here, heat curing is performed for 30 minutes at a temperature of about 230° C.
In this time, a lens diameter d of the microlens 225 is uniform or non-uniform, and a height h of the microlens 225 is also uniform or non-uniform.
Further, the diameter d of the microlens 225 is about 1 to about 10 μm, but is not limited thereto. The height h of the microlens 225 is about ½ or less of the diameter d of the microlens 225. Further, a gap p between the microlenses 225 may be about ¼ or less of the diameter d of the microlens 225, but is not limited thereto. An occupying area of the microlens 225 may be 50 to 90% or more than, for example, of an entire area of the uneven layer 120, but is not limited thereto.
Referring to
Further, the first electrode 240 is formed with a single layer made of a transparent conductive oxide or a metal, but is not limited thereto and may be formed with a multiple layer in which two layers or more of a transparent conductive oxide/metal are stacked.
The first electrode 240 can be formed with chemical vapor deposition (CVD), physical vapor deposition (PVD), an electron beam (E-beam) method, or others. In this case, when the first electrode 240 is deposited on the substrate 210 in which the uneven layer 230 is formed, the first electrode 240 is formed along a step coverage of a microlens shape of the uneven layer 230, and thus, a microlens shape is displayed on a surface of the first electrode 240.
Therefore, a conventional process of forming an uneven portion in the first electrode using an acid/base etching solution may be omitted. Accordingly, unevenness can be easily formed on the first electrode, and the process is environment-friendly and reduces prevents an electrical characteristic of a solar cell from being deteriorated.
Next, referring to
Next, referring to
In the pin structure, when light, such as sun light, is applied, a silicon thin film layer absorbs the light, and thus, an electron-hole pair is generated. In the pin structure, by a built-in potential generated with a p-type and an n-type, the generated electron and hole are moved to n-type and p-type semiconductors, respectively, and are used.
In embodiments of the present invention, the absorption layer 250 is shown as only one layer, but the absorption layer 250 can have a structure stacked with a p+ type amorphous silicon layer/intrinsic-type amorphous silicon layer/n+ amorphous silicon layer.
In this case, the absorption layer 250 can be formed by sequentially depositing amorphous silicon layers with a plasma enhanced chemical vapor deposition (PECVD) method.
Next, referring to
Next, referring to
The second electrode 260 is formed with a single layer made of a transparent conductive oxide or a metal, but is not limited thereto and may be stacked with two layers or more of a transparent conductive oxide/metal.
In this case, like the first electrode 240, the second electrode 260 can be formed with chemical vapor deposition (CVD), physical vapor deposition (PVD), and/or an electron beam (E-beam) method.
Finally, referring to
In this case, by patterning an area separated from the first patterning line 245 and the second patterning line 255, the area can be electrically insulated by a third patterning line 265.
Therefore, as described above, a thin film solar cell in the present implementation can be manufactured.
As described above, in a thin film solar cell and a method of manufacturing the same of this document, by forming an uneven layer using a resin on the first substrate, an uneven structure can be easily formed in the solar cell.
Further, because a conventional acid/base etching solution is not used, the method is environment-friendly, and because a surface of the first electrode is not etched, an electrical characteristic of the solar cell can be reduced or prevented from being deteriorated.
The foregoing embodiments and advantages are merely examples and are not to be construed as limiting the invention. The present teaching can be readily applied to other types of apparatuses. The description of the foregoing embodiments is intended to be illustrative, and not to limit the scope of the claims. Many alternatives, modifications, and variations will be apparent to those skilled in the art. In the claims, means-plus-function clauses are intended to cover the structures described herein as performing the recited function and not only structural equivalents but also equivalent structures. Moreover, unless the term “means” is explicitly recited in a limitation of the claims, such limitation is not intended to be interpreted under 35 USC 112 (6).
Number | Date | Country | Kind |
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10-2008-0117588 | Nov 2008 | KR | national |
10-2009-0109860 | Nov 2009 | KR | national |