Claims
- 1. A method for producing a thin film transistor array which comprises: a transparent insulating substrate; a plurality of scanning lines formed of a first conductive film formed on said transparent insulating substrate; a gate insulating film; a plurality of signal lines formed of a second conductive film formed on said gate insulating film; pixel electrodes formed on a gate insulating film in a region enclosed with adjacent scanning lines and adjacent signal lines, thin film transistors coupled to the pixel electrodes; and light shielding films forming light shielding overlap portions comprised of the first conductive film and overlapping with peripheral portions facing said signal lines of respective pixel electrodes via said gate insulating film, said light shielding films forming correction overlap portions overlapping via the gate insulating film with said signal lines, wherein predetermined regions of said light shielding films, located near the both ends thereof along said signal lines, are projected toward said signal lines,said method for producing a thin film transistor array comprising: in cases where an interruption portion occurs in said signal lines, irradiating two correction overlap portions across the interruption portion with a laser beam, thereby making the light shielding film and the signal line, irradiated with the laser beam, electrically continuous, thus supplying a data signal to the signal line beyond the interruption portion, and thus effectuating a correction of the interruption in said signal line.
- 2. A method for producing a thin film transistor array comprising: a transparent insulating substrate; a plurality of scanning lines formed of a first conductive film formed on said transparent insulating substrate; a gate insulating film; a plurality of signal lines formed of a second conductive film formed on said gate insulating film; pixel electrodes formed on a protective film on said signal line and said gate insulating film in a region enclosed with adjacent scanning lines and adjacent signal lines; thin film transistors coupled to said pixel electrodes; and light shielding films forming light shielding overlap portions comprised of the first conductive film and overlapping with peripheral portions facing said signal lines of respective pixel electrodes via said gate insulating film and said protective film, said light shielding films forming correction overlap portions overlapping via said gate insulating film and said protective film with said signal lines, wherein predetermined regions of said light shielding films, located near the both ends thereof along said signal lines, are projected toward said signal lines,said method for producing a thin film transistor array comprising: in cases where an interruption portion occurs in said signal lines, irradiating two correction overlap portions across the interruption portion with a laser beam, thereby making the light shielding film and the signal line, irradiated with the laser beam, electrically continuous, thus supplying a data signal to the signal line beyond the interruption portion, and thus effectuating a correction of the interruption in said signal line.
Priority Claims (1)
Number |
Date |
Country |
Kind |
11-050140 |
Feb 1999 |
JP |
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Parent Case Info
The present Application is a Divisional Application of U.S. patent application Ser. No. 09/513,925, filed on Feb. 28, 2000 now U.S. Pat. No. 6,240,104.
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