Number | Date | Country | Kind |
---|---|---|---|
63-270893 | Oct 1988 | JPX | |
63-282596 | Nov 1988 | JPX | |
1-78390 | Mar 1989 | JPX | |
1-87009 | Apr 1989 | JPX | |
1-43098[U]JPX | Apr 1989 | JPX |
This application is a continuation of application Ser. No. 07/427,041, filed Oct. 25, 1989, now abandoned.
Number | Name | Date | Kind |
---|---|---|---|
3800411 | Abbink et al. | Apr 1974 | |
3859642 | Mar | Jan 1975 | |
3878549 | Yamazaki et al. | Apr 1975 | |
4053917 | Blaha et al. | Oct 1977 | |
4096509 | Blaha et al. | Jun 1978 | |
4323910 | Sokoloski et al. | Apr 1982 | |
4353083 | Trudel et al. | Oct 1982 | |
4481527 | Chen et al. | Nov 1984 | |
4533934 | Smith | Aug 1985 | |
4611308 | Lonky | Sep 1986 | |
4667217 | Janning | May 1987 | |
4673957 | Ovshinsky et al. | Jun 1987 | |
4686558 | Adam | Aug 1987 | |
4804637 | Smayling et al. | Feb 1989 | |
4821092 | Noguchi | Apr 1989 | |
4876582 | Janning | Oct 1989 | |
4885616 | Ohta | Dec 1989 | |
4920392 | Nishiura | Apr 1990 | |
4951113 | Huang et al. | Aug 1990 | |
5028976 | Ozaki et al. | Jul 1991 |
Number | Date | Country |
---|---|---|
0138439 AE | Apr 1985 | EPX |
53-75875 | Jul 1978 | JPX |
55-154767 | Dec 1980 | JPX |
56-29369 | Mar 1981 | JPX |
57-95661 | Jun 1982 | JPX |
61-51878 | Mar 1986 | JPX |
61-292369 | Dec 1986 | JPX |
63-1072 | Jan 1988 | JPX |
63-129669 | Jun 1988 | JPX |
63-190386 | Aug 1988 | JPX |
63-308384 | Dec 1988 | JPX |
WO8404418 | Nov 1984 | WOX |
Entry |
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Kim et al, "Amorphous silicon thin-film transistors with two-layer gate insulator", Appl. Phys. Letter, vol. 51, No. 21, May 22, 1989. |
Interface Modification to Enhance DC and Pulse Response of MNOS Memory Transistors, by McLouishi; Abstract 313, Oct. 22, 1976; pp. 805-807. |
PECVD Silicon Nitride: Deposition and Post-Deposition Modification for Application in Memory Devices, Brown, Abstract 274, Oct. 14, 1988, Electrochemical Society Meetings Abstract. |
Number | Date | Country | |
---|---|---|---|
Parent | 427041 | Oct 1989 |