Claims
- 1. A thin-film transistor comprising:an insulating substrate; a polysilicon pattern formed on the insulating substrate, the polysilicon pattern including a first region of a first conductivity, a second region of the first conductivity, and a channel region that connects the first region and the second region; a gate insulating film that covers the channel region; and a gate electrode pattern formed above the channel region, the polysilicon pattern further including a first extending portion that extends from the first region to a first tip end, and a second extending portion that extends from the second region to a second tip end, said first extending portion and said second extending portion extending along a surface of said substrate.
- 2. The thin-film transistor as claimed in claim 1, wherein the first extending portion and the second extending portion have the same conductivity.
- 3. The thin-film transistor as claimed in claim 1, further comprising a second insulating film formed on the insulating substrate in such a manner that the insulating film covers the polysilicon pattern and the gate electrode pattern,wherein the second insulating film has an opening exposing the first tip end and the second tip end at a location between the first extending portion and the second extending portion.
Priority Claims (1)
Number |
Date |
Country |
Kind |
11-310409 |
Oct 1999 |
JP |
|
Parent Case Info
This is a divisional, of application Ser. No. 09/680,368, filed Oct. 5, 2000, now U.S. Pat. No. 6,472,256.
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May 1999 |
A |
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Zhang et al. |
Jul 2002 |
B1 |