Claims
- 1. A thin film-transistor manufacturing method comprising:an opaque film step of forming an opaque film having a predetermined shape on a substrate: an insulating film step of forming an insulating film on said substrate so as to cover said opaque film; a source-and-drain-electrode forming step of forming a source electrode and a drain electrode which are made of metallic films having a predetermined line width and keeping a predetermined interval from each other on said formed insulating film; a semiconductor-insulating-film-layer step of forming a semiconductor layer and a gate insulating film layer on said insulating film in order above said source electrode and said drain electrode; a gate-electrode forming step of forming a metallic film for a gate electrode on said gate insulating film layer; a pattern forming step of patterning said semiconductor layer, said gate insulating film layer, and said metallic film to form a gate electrode having a protruded TFT portion protruding from a gate line in which said semiconductor layer and said gate insulating film layer are formed, said protruded TFT portion having a base area near the gate line and an extended area beyond the base area; wherein said source-and-drain-electrode forming step forms at least either of a source electrode and a drain electrode serving as a signal electrode so as to cross said base area of the protruded TFT portion formed in said pattern forming step.
- 2. The thin-film-transistor manufacturing method according to claim 1, wherein said pattern forming step pattern-forms said semiconductor layer, said gate insulating film layer, and said metallic film for a gate electrode in said same patterning step.
- 3. The thin-film-transistor manufacturing method according to claim 1, wherein said pattern forming step pattern-forms said semiconductor layer, said gate insulting film layer, and said metallic film for a gate electrode into almost said same shape.
Priority Claims (1)
Number |
Date |
Country |
Kind |
11-214603 |
Jul 1999 |
JP |
|
CROSS REFERENCE TO RELATED APPLICATION
The present application is a divisional of copending application Ser. No. 09/614,767 filed on Jul. 12, 2000, the entire contents of which is incorporated herein by its reference.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
5097297 |
Nakazawa |
Mar 1992 |
A |
Foreign Referenced Citations (1)
Number |
Date |
Country |
2516030 |
Mar 1989 |
JP |