Claims
- 1. A method of producing a thin film transistor, said method comprising:preparing a plasma CVD apparatus including a radio-frequency electrode and a susceptor electrode disposed in opposed relation and installed in a film forming chamber; bringing a gas mixture of silane gas and ammonia gas into a plasma state under a desired radio-frequency electric field formed between said radio-frequency electrode and said susceptor electrode, thereby forming a first gate insulating film on a gate electrode formed on a substrate; bringing a gas mixture having the same composition as said gas mixture into a plasma state under a greater radio-frequency electric field than said radio-frequency electric field, thereby forming a second gate insulating film on said first gate insulating film; and forming a semiconductor active film on said second gate insulating film.
- 2. A method of producing a thin film transistor, said method comprising:preparing a plasma CVD apparatus including a radio-frequency electrode and a susceptor electrode disposed in opposed relation and installed in a film forming chamber; bringing a gas mixture of silane gas and ammonia gas into a plasma state under a desired radio-frequency electric field formed between said radio-frequency electrode and said susceptor electrode, thereby forming a first gate insulating film on a gate electrode formed on a substrate; bringing a gas mixture, in which silane gas and ammonia gas are mixed at such a mixing ratio as containing the ammonia gas at a greater proportion relative to the silane gas than in said mixture gas, into a plasma state under a radio-frequency electric field having the same intensity as said radio-frequency electric field, thereby forming a second gate insulating film on said first gate insulating film; and forming a semiconductor active film on said second gate insulating film.
Priority Claims (2)
Number |
Date |
Country |
Kind |
10-285776 |
Oct 1998 |
JP |
|
11-242360 |
Aug 1999 |
JP |
|
Parent Case Info
This application is a divisional application of U.S. application Ser. No. 09/413,653 filed on Oct. 6, 1999, now U.S. Pat. No. 6,355,943 entitled “Thin Film Transistor, Method of Producing the Same, Liquid Crystal Display, and thin Film Forming Apparatus”.
US Referenced Citations (7)
Foreign Referenced Citations (5)
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JP |
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Jul 1995 |
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63117469A (ABSTRACT) |
May 1998 |
JP |