Claims
- 1. A thin film transistor, comprising:
- an insulative substrate having a relatively planar transistor supporting surface;
- a gate electrode bus of a first width disposed on said supporting surface of said substrate and extending along said surface in a first lateral direction and having a transistor forming a portion, thereof, functioning as a transistor gate;
- a gate insulating film disposed atop at least said transistor forming portion of said gate electrode bus;
- a semiconductor film disposed atop said gate insulating film;
- a source electrode bus disposed atop said semiconductor film and extending along a second lateral direction orthogonal to said first lateral direction, said source electrode bus having a branch portion of a second width disposed atop said semiconductor film extending substantially parallel to said first lateral direction, said second width being smaller than said first width; and
- a drain electrode, disposed atop said semiconductor film without intersecting said source electrode bus, wherein said branch portion extends over a first portion of said semiconductor film such that the entirety of said branch portion is disposed over said gate electrode bus with no portion of said branch portion extending over an edge of said gate electrode bus.
- 2. The transistor of claim 1, wherein said gate electrode bus is tantalum and said gate insulating film is a double layered construction of anodized tantalum film and a silicon nitride film.
- 3. A thin film transistor as claimed in claim 1, wherein said semiconductor film is an amorphous silicon thin film.
- 4. A thin film transistor, comprising:
- an insulative substrate having a relatively planar transistor supporting surface;
- a gate electrode bus disposed on said supporting surface of said substrate and extending along said surface in a first lateral direction, said gate electrode bus having an edge and having a transistor forming a portion, thereof, functioning as a transistor gate;
- a gate insulating film disposed atop at least said transistor forming portion of said gate electrode bus;
- a semiconductor film disposed atop said gate insulating film;
- a source electrode bus disposed atop said semiconductor film and extending along a second lateral direction orthogonal to said first lateral direction, but substantially in the plane of said supporting surface;
- said source electrode bus having a branch portion extending therefrom and the entirety of said branch portion is disposed over said portion of said transistor gate without extending over a substantial portion of said edge thereof to thereby reduce gate to source leakage; and
- a drain electrode disposed atop said semiconductor film, parallel to said branch portion and extending over portion of said transistor gate without intersecting said source electrode bus.
- 5. The thin film transistor of claim 4, wherein said gate electrode bus is tantalum and said gate insulating film is a double layered construction of anodized tantalum film and a silicon nitride film.
- 6. The thin film transistor of claim 4, wherein said semiconductor film is an amorphous silicon thin film.
- 7. The thin film transistor of claim 4, wherein said gate electrode bus is tantalum and said gate insulating film is a double layered construction of anodized tantalum film and a silicon nitride film, and said semiconductor film is an amorphous silicon thin film.
Priority Claims (2)
Number |
Date |
Country |
Kind |
59-239653 |
Nov 1984 |
JPX |
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59-239654 |
Nov 1984 |
JPX |
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Parent Case Info
This application is a continuation of copending application Ser. No. 07/235,728, filed on Aug. 19, 1988, U.S. Pat. No. 4,843,438, that is a continuation of application Ser. No. 057,743 filed June 3, 1987, abandoned, that is a continuation of application Ser. No. 797,660 filed Nov. 13, 1985, abandoned.
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Continuations (3)
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Number |
Date |
Country |
Parent |
235728 |
Aug 1988 |
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Parent |
57743 |
Jun 1987 |
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Parent |
797660 |
Nov 1985 |
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