Patent Application
20200350412
Embodiments of the disclosure are in the field of integrated circuit structures and, in particular, thin film transistors having alloying source or drain metals.
For the past several decades, the scaling of features in integrated circuits has been a driving force behind an ever-growing semiconductor industry. Scaling to smaller and smaller features enables increased densities of functional units on the limited real estate of semiconductor chips.
For example, shrinking transistor size allows for the incorporation of an increased number of memory or logic devices on a chip, lending to the fabrication of products with increased capacity. The drive for ever-more capacity, however, is not without issue. The necessity to optimize the performance of each device becomes increasingly significant. In the manufacture of integrated circuit devices, multi-gate transistors, such as tri-gate transistors, have become more prevalent as device dimensions continue to scale down. In conventional processes, tri-gate transistors are generally fabricated on either bulk silicon substrates or silicon-on-insulator substrates. In some instances, bulk silicon substrates are preferred due to their lower cost and compatibility with the existing high-yielding bulk silicon substrate infrastructure. Scaling multi-gate transistors has not been without consequence, however. As the dimensions of these fundamental building blocks of microelectronic circuitry are reduced and as the sheer number of fundamental building blocks fabricated in a given region is increased, the constraints on the semiconductor processes used to fabricate these building blocks have become overwhelming.
The performance of a thin-film transistor (TFT) may depend on a number of factors. For example, the efficiency at which a TFT is able to operate may depend on the sub threshold swing of the TFT, characterizing the amount of change in the gate-source voltage needed to achieve a given change in the drain current. A smaller sub threshold swing enables the TFT to turn off to a lower leakage value when the gate-source voltage drops below the threshold voltage of the TFT. The conventional theoretical lower limit at room temperature for the sub threshold swing of the TFT is 60 millivolts per decade of change in the drain current.
Variability in conventional and state-of-the-art fabrication processes may limit the possibility to further extend them into the, e.g. 10 nm or sub-10 nm range. Consequently, fabrication of the functional components needed for future technology nodes may require the introduction of new methodologies or the integration of new technologies in current fabrication processes or in place of current fabrication processes.
Thin film transistors having alloying source or drain metals are described. In the following description, numerous specific details are set forth, such as specific material and tooling regimes, in order to provide a thorough understanding of embodiments of the present disclosure. It will be apparent to one skilled in the art that embodiments of the present disclosure may be practiced without these specific details. In other instances, well-known features, such as single or dual damascene processing, are not described in detail in order to not unnecessarily obscure embodiments of the present disclosure. Furthermore, it is to be understood that the various embodiments shown in the Figures are illustrative representations and are not necessarily drawn to scale. In some cases, various operations will be described as multiple discrete operations, in turn, in a manner that is most helpful in understanding the present disclosure, however, the order of description should not be construed to imply that these operations are necessarily order dependent. In particular, these operations need not be performed in the order of presentation.
Certain terminology may also be used in the following description for the purpose of reference only, and thus are not intended to be limiting. For example, terms such as “upper”, “lower”, “above”, “below,” “bottom,” and “top” refer to directions in the drawings to which reference is made. Terms such as “front”, “back”, “rear”, and “side” describe the orientation and/or location of portions of the component within a consistent but arbitrary frame of reference which is made clear by reference to the text and the associated drawings describing the component under discussion. Such terminology may include the words specifically mentioned above, derivatives thereof, and words of similar import.
Embodiments described herein may be directed to front-end-of-line (FEOL) semiconductor processing and structures. FEOL is the first portion of integrated circuit (IC) fabrication where the individual devices (e.g., transistors, capacitors, resistors, etc.) are patterned in the semiconductor substrate or layer. FEOL generally covers everything up to (but not including) the deposition of metal interconnect layers. Following the last FEOL operation, the result is typically a wafer with isolated transistors (e.g., without any wires).
Embodiments described herein may be directed to back end of line (BEOL) semiconductor processing and structures. BEOL is the second portion of IC fabrication where the individual devices (e.g., transistors, capacitors, resistors, etc.) are interconnected with wiring on the wafer, e.g., the metallization layer or layers. BEOL includes contacts, insulating layers (dielectrics), metal levels, and bonding sites for chip-to-package connections. In the BEOL part of the fabrication stage contacts (pads), interconnect wires, vias and dielectric structures are formed. For modern IC processes, more than 10 metal layers may be added in the BEOL.
Embodiments described below may be applicable to FEOL processing and structures, BEOL processing and structures, or both FEOL and BEOL processing and structures. In particular, although an exemplary processing scheme may be illustrated using a FEOL processing scenario, such approaches may also be applicable to BEOL processing. Likewise, although an exemplary processing scheme may be illustrated using a BEOL processing scenario, such approaches may also be applicable to FEOL processing.
One or more embodiments described herein are directed to structures and architectures for fabricating BEOL thin film transistors (TFTs) having source-drain metals as a source of alloying to improve stability for embedded oxide thin film transistors for use in, e.g., embedded DRAM (eDRAM) applications. Embodiments may include or pertain to one or more of back-end transistors, semiconducting oxide materials, thin film transistors, and system-on-chip (SoC) technologies. One or more embodiments may be implemented to realize high performance back-end transistors to potentially increase monolithic integration of back-end logic plus memory in SoCs of future technology nodes.
To provide context, for embedded DRAM technology (e.g., e-DRAM), novel n type oxide semiconductor thin film transistors may be inserted in a back-end layer to act as access transistors for a DRAM array. However, such thin film transistors may exhibit poor stability against high temperatures due to formation of oxygen-related defects. In accordance with one or more embodiments described herein, a source or drain metal (e.g., M=Ag, Al, Ni, Co, Fe, Cu, Cr, Mn, Mo, Ta, Ir, Ru) may be used to enable diffusion from a source or drain structure into a channel oxide material of the thin film transistor to form M-O bonds and reduce the formation of oxygen-related defects. Transistors fabricated using such metals, M, may exhibit little degradation after an anneal of about 350 degrees Celsius, whereas transistors fabricated using other source or drain materials such as titanium nitride (TiN) may exhibit marked degradation. Use of source or drain metals M may provide for transistors that exhibit stable transistor I-V characteristics at high temperature processing (e.g., processing greater than 250 degrees Celsius).
In particular embodiments described herein, a metal or metals are deposited to form source-drain contacts on top of a thin film transistor channel material, such as a semiconducting oxide material. A subsequent thermal process can drive metal atoms from the source or drain structures into the thin film transistor channel material to form an alloyed oxide semiconductor in a portion of the semiconducting oxide material. The formed alloyed oxide semiconductor channel may provide superior thermal stability so that transistor performance such as ON current, subthreshold swing, contact resistance, or threshold voltage do not shift dramatically post thermal processing.
A source-drain metal may be used as a diffusion source to drive metallic atoms into an oxide channel to form alloyed oxide materials to improve thermal stability against BEOL processing. As an exemplary structure,
Referring to
In an embodiment, the integrated circuit structure 100 further includes a gate dielectric layer 106 between the gate electrode 104 and the semiconducting oxide material 102. In one such embodiment, the gate dielectric layer 106 is or includes a layer of a high-k dielectric material directly on the semiconducting oxide material 102, as is depicted.
An insulating structure 110, such as an inter-layer dielectric layer, is included between each of the pair of conductive contacts 108. The insulating structure 110 is over, and may be directly on the second region of the semiconducting oxide material 102. Isolation structures 111 may be included on either side of the pair of conductive contacts 108, as is depicted. The isolation structures 111 may include one or more dielectric layers.
In an embodiment, the gate electrode 104 is a bottom gate electrode over a conductive line 116, such as an interconnect line. In one embodiment, an etch stop layer 114 is between the gate electrode 104 and the conductive line 116. A conductive via 112 is in an opening in the etch stop layer 114 and electrically couples the gate electrode 104 to the conductive line 116, as is depicted. The conductive line 116 may be formed above additional etch stop layers 118 and/or inter-layer dielectric (ILD) layers 120, such as low-k ILD layers.
In an embodiment, each of the pair of conductive contacts includes a metal species, and the metal species is in the first region of the semiconducting oxide material 102 but not in the second region of the semiconducting oxide material 102. Each of the pair of conductive contacts 108 can include a single metal or metallic structure. In other embodiments, each of the pair of conductive contacts 108 includes multiple conductive layers which may be multiple layers of a same or differing materials. In the example shown, four conductive layers 108A, 108B, 108C, and 108D are included in each of the conductive contacts 108. In a particular embodiment, layers 108A and 108B are first and second diffusion barrier layers, layer 108C is a seed layer, and layer 108D is a conductive fill.
In any case, in an embodiment, the metal species included in each of the pair of conductive contacts 108 and also included in the first region of the semiconducting oxide material 102 is included in a portion of the pair of conductive contacts 108 that is directly on the first region of the semiconducting oxide material 102. For example, in the case that each of the pair of conductive contacts 108 includes a single metal or metallic structure, the metal species is or is included in the single metal or metallic structure. In the case that each of the pair of conductive contacts 108 includes multiple conductive layers, in one embodiment, the metal species is at least included in (or makes up the composition of) the layer 108A directly on the first region of the semiconducting oxide material 102.
In an embodiment, the metal species is selected from the group consisting of Ag, Al, Ni, Co, Fe, Cu, Cr, Mn, Mo, Ta, Ir and Ru. In an embodiment, the metal species in the first region of the semiconducting oxide bonds to oxygen atoms of the first region of the semiconducting oxide material 102. In an embodiment, the semiconducting oxide material 102 is or includes a material selected from the group consisting of indium gallium zinc oxide, tin oxide, antimony oxide, indium oxide, indium tin oxide, titanium oxide, zinc oxide, indium zinc oxide, gallium oxide, titanium oxynitride, ruthenium oxide and tungsten oxide.
As an exemplary arrangement of a plurality of integrated circuit structures of the type of
In another aspect, there is increased need for advanced SoCs to include monolithically integrated BEOL transistors for logic functionality at higher metal layers. Such BEOL transistors typically have a lower thermal budget than front-end transistors due to increased thermal sensitivity of back-end materials. Also, the performance of such transistors may be severely hampered due to low channel mobility for BEOL-compatible channel materials such as IGZO (indium gallium zinc oxide).
In accordance with one or more embodiments described herein, non-planar BEOL-compatible thin film transistors (TFTs) are fabricated by effectively increasing the transistor width (and hence the drive strength and performance) for a given projected area. A TFT fabricated using such an architecture may exhibit an increase in gate control, stability, and performance of thin film transistors. Applications of such systems may include, but are not limited to, back end (BEOL) logic, memory, or analog applications. Embodiments described herein may include non-planar structures that effectively increase transistor width (relative to a planar device) by integrating the devices in unique architectures.
To provide a benchmark,
Referring to
The planar TFT 200 has an effective gate width that is the length of the planar channel material 206 between locations A and B′, as depicted in
As a first example of a structure having relative increase in transistor width (e.g., relative to the structure of
Referring to
The non-planar TFT 250 has an effective gate width that is the length of the conformal semiconducting oxide material 256 between locations A′ and B′, i.e., the full length including undulating portions over the tops and sidewalls of the dielectric fins 255, as is depicted in
To highlight other aspects of a non-planar TFT topography,
Referring to
In an embodiment, the integrated circuit structure 270 further includes a gate dielectric layer 264 between the gate electrode 258 and the first portion of the semiconducting oxide material 256 on the top and sidewalls of the dielectric fin 255, as is depicted in
Referring collectively to
In an embodiment, the insulator structure 250 or 270 includes one or more fins 255. Individual ones of the fins 255 have a top and sidewalls. The semiconducting oxide material 256 is on the top and sidewalls of the individual ones of the fins 255. In an embodiment, the insulator structure 255 (such as fin or fins 255) is composed of a dielectric material such as, but not limited to, silicon dioxide, silicon oxy-nitride, silicon nitride, or carbon-doped silicon nitride. In an embodiment, the insulator structure 255 is composed of a low-k dielectric material.
In an embodiment, dielectric fins described herein may be fabricated as a grating structure, where the term “grating” is used herein to refer to a tight pitch grating structure. In one such embodiment, the tight pitch is not achievable directly through conventional lithography. For example, a pattern based on conventional lithography may first be formed, but the pitch may be halved by the use of spacer mask patterning, as is known in the art. Even further, the original pitch may be quartered by a second round of spacer mask patterning. Accordingly, the grating-like patterns described herein may have dielectric fins spaced at a constant pitch and having a constant width. The pattern may be fabricated by a pitch halving or pitch quartering, or other pitch division, approach. In an embodiment, the dielectric fin or fins 255 each have squared-off (as shown) or rounder corners.
In an embodiment, a gate dielectric layer 264 is between the gate electrode 258 and the first portion of the semiconducting oxide material 256 on the insulator structure 255, as is depicted. In one such embodiment, the gate dielectric layer 264 includes a layer of a high-k dielectric material directly on the semiconducting oxide material 256.
In an embodiment, a first dielectric spacer (first 272) is between the first conductive contact (first 274) and the first side of the gate electrode 258, the first dielectric spacer (first 272) over a fourth portion of the semiconducting oxide material 256 on the insulator structure 255. A second dielectric spacer (second 272) is between the second conductive contact (second 274) and the second side of the gate electrode 258, the second dielectric spacer (second 272) over a fifth portion of the semiconducting oxide material 256 on the insulator structure 255. In one such embodiment, a gate dielectric layer 264 is between the gate electrode 258 and the first portion of the semiconducting oxide material 256 on the insulator structure 255. The gate dielectric layer 264 is further along the first dielectric spacer (first 272) and the second dielectric spacer (second 272). In a specific such embodiment, the gate dielectric layer 264 includes a layer of a high-k dielectric material directly on the semiconducting oxide material 256.
In an embodiment, the semiconducting oxide material 256 includes indium gallium zinc oxide (IGZO). In an embodiment, the semiconducting oxide material 256 includes a material selected from the group consisting of tin oxide, antimony oxide, indium oxide, indium tin oxide, titanium oxide, zinc oxide, indium zinc oxide, gallium oxide, titanium oxynitride, ruthenium oxide and tungsten oxide. In an embodiment, the gate dielectric layer 264 includes a layer of a high-k dielectric material directly on the semiconducting oxide material 256. In an alternative embodiment, the channel material is not a semiconducting oxide material but is rather a layer of polycrystalline silicon.
As a second example of a structure having relative increase in transistor width,
Referring to
In an embodiment, the insulator structure 350 is a single layer of ILD material, as is depicted. In another embodiment, the insulator structure 350 is a stack of alternating dielectric layers, such as described in association with
In an embodiment, a third conductive contact 358 is over and in contact with the exposed top surface of the gate electrode 308, as is depicted. In an embodiment, the first conductive contact (left 354) is in a second trench 370 in the insulator structure 350, and the second conductive contact (right 354) is in a third trench 372 in the insulator structure 350, as is depicted. In an embodiment, the third conductive contact 358 is coupled to a conductive line 360, which may be a word line, as is depicted. In an embodiment, the first and second conductive contacts 354 are coupled corresponding conductive lines 356, as is depicted.
Referring again to
In an embodiment, the semiconducting oxide material 306 includes indium gallium zinc oxide (IGZO). In an embodiment, the semiconducting oxide material 306 includes a material selected from the group consisting of tin oxide, antimony oxide, indium oxide, indium tin oxide, titanium oxide, zinc oxide, indium zinc oxide, gallium oxide, titanium oxynitride, ruthenium oxide and tungsten oxide. In an embodiment, the gate dielectric layer 314 includes a layer of a high-k dielectric material directly on the semiconducting oxide material 306. In an alternative embodiment, the channel material is not a semiconducting oxide material but is rather a layer of polycrystalline silicon.
As a third example of a structure having relative increase in transistor width,
Referring to
A semiconducting oxide material 406, or similarly suitable channel material, is in the first trench 452 in the insulator structure 450. The semiconducting oxide material 406 is conformal with the sidewalls and bottom of the first trench 452, i.e., conformal with the topography of the insulator structure 450. A gate dielectric layer 414 is on the semiconducting oxide material 406 in the first trench 452. The gate dielectric layer 414 is conformal with the semiconducting oxide material 406 conformal with the sidewalls and bottom of the first trench 452. A gate electrode 408 is on the gate dielectric layer 414 in the first trench 452. The gate electrode 408 has a first side opposite a second side and has an exposed top surface. A first conductive contact (left 454) is laterally adjacent the first side of the gate electrode 408. The first conductive contact (left 454) is on a first portion of the semiconducting oxide material 406 conformal with the sidewalls of the first trench 452. A second conductive contact (right 454) is laterally adjacent the second side of the gate electrode 408. The second conductive contact (right 454) is on a second portion of the semiconducting oxide material 406 conformal with the sidewalls of the first trench 452. In an embodiment, the conductive contacts 454 extend all the way, or substantially all the way along the trench 452 for maximized source/drain contact area and maintain a relatively small effective gate length. In an embodiment, the first and second conductive contacts 454 are or include a metal species. The metal species is in the first and second portions of the semiconducting oxide material 406 but not in a region of the semiconducting oxide material 406 beneath the gate electrode 408.
In an embodiment, a third conductive contact 458 is over and in contact with the exposed top surface of the gate electrode 408, as is depicted. In an embodiment, the first conductive contact (left 454) is in a second trench 470 in the insulator structure 450, and the second conductive contact (right 454) is in a third trench 472 in the insulator structure 450, as is depicted. In an embodiment, the third conductive contact 458 is coupled to a conductive line 460, which may be a word line, as is depicted. In an embodiment, the first and second conductive contacts 454 are coupled corresponding conductive lines 456, as is depicted.
Referring again to
In an embodiment, the semiconducting oxide material 406 includes indium gallium zinc oxide (IGZO). In an embodiment, the semiconducting oxide material 406 includes a material selected from the group consisting of tin oxide, antimony oxide, indium oxide, indium tin oxide, titanium oxide, zinc oxide, indium zinc oxide, gallium oxide, titanium oxynitride, ruthenium oxide and tungsten oxide. In an embodiment, the gate dielectric layer 414 includes a layer of a high-k dielectric material directly on the semiconducting oxide material 406. In an alternative embodiment, the channel material is not a semiconducting oxide material but is rather a layer of polycrystalline silicon.
In accordance with an embodiment of the present disclosure, the above TFT non-planar architectures 250, 270, 300 and 400 provide for higher effective widths for a transistor for a scaled projected area. In an embodiment, the drive strength and performance of such transistors are improved over state-of-the-art planar BEOL transistors.
As an exemplary processing scheme,
Referring to
Referring to
Referring to
Referring to
Referring to
Referring to
Referring to
Referring to
It is to be appreciated that the layers and materials described in association with embodiments herein are typically formed on or above an underlying semiconductor substrate 202, 252, 302, 402, 500 or a substrate beneath ILD layer 120, e.g., as FEOL layer(s). In other embodiments, the layers and materials described in association with embodiments herein are typically formed on or above underlying device layer(s) of an integrated circuit, e.g., as BEOL layer(s) above an underlying semiconductor substrate 202, 252, 302, 402, 500 or a substrate beneath ILD layer 120. In an embodiment, an underlying semiconductor substrate represents a general workpiece object used to manufacture integrated circuits. The semiconductor substrate often includes a wafer or other piece of silicon or another semiconductor material. Suitable semiconductor substrates include, but are not limited to, single crystal silicon, polycrystalline silicon and silicon on insulator (SOI), as well as similar substrates formed of other semiconductor materials. The semiconductor substrate, depending on the stage of manufacture, often includes transistors, integrated circuitry, and the like. The substrate may also include semiconductor materials, metals, dielectrics, dopants, and other materials commonly found in semiconductor substrates. Furthermore, although not depicted, structures described herein may be fabricated on underlying lower level back end of line (BEOL) interconnect layers.
In the case that an insulator layer 254, 304, 404 or 502 is optionally used, the insulator layer 254, 304, 404 or 502 may be composed of a material suitable to ultimately electrically isolate, or contribute to the isolation of, portions of a gate structure from an underlying bulk substrate or interconnect layer. For example, in one embodiment, the insulator layer 254, 304, 404 or 502 is composed of a dielectric material such as, but not limited to, silicon dioxide, silicon oxy-nitride, silicon nitride, or carbon-doped silicon nitride. In a particular embodiment, the insulator layer 254, 304, 404 or 502 is a low-k dielectric layer of an underlying BEOL layer.
In an embodiment, the semiconducting oxide material 102, 206, 256, 306 or 406 and, hence, channel material of a TFT includes an IGZO layer that has a gallium to indium ratio of 1:1, a gallium to indium ratio greater than 1 (e.g., 2:1, 3:1, 4:1, 5:1, 6:1, 7:1, 8:1, 9:1, or 10:1), or a gallium to indium ratio less than 1 (e.g., 1:2, 1:3, 1:4, 1:5, 1:6, 1:7, 1:8, 1:9, or 1:10). A low indium content IGZO may refer to IGZO having more gallium than indium (e.g., with a gallium to indium ratio greater than 1:1), and may also be referred to as high gallium content IGZO. Similarly, low gallium content IGZO may refer to IGZO having more indium than gallium (e.g., with a gallium to indium ratio less than 1:1), and may also be referred to as high indium content IGZO. In another embodiment, the semiconducting oxide material 102, 206, 256, 306 or 406 is or includes a material such as tin oxide, antimony oxide, indium oxide, indium tin oxide, titanium oxide, zinc oxide, indium zinc oxide, gallium oxide, titanium oxynitride, ruthenium oxide, or tungsten oxide. In an alternative embodiment, polycrystalline silicon is used as the channel material instead of a semiconducting oxide material. In an embodiment, no matter the composition, the channel material has a thickness between 5 nanometers and 30 nanometers
In an embodiment, the semiconducting oxide material 102, 206, 256, 306 or 406 is an amorphous, crystalline, or semi crystalline oxide semiconductor, such as an amorphous, crystalline, or semi crystalline oxide semiconductor IGZO layer. The semiconducting oxide material 102, 206, 256, 306 or 406 may be formed using a low-temperature deposition process, such as physical vapor deposition (PVD) (e.g., sputtering), atomic layer deposition (ALD), or chemical vapor deposition (CVD). The ability to deposit the semiconducting oxide material 102, 206, 256, 306 or 406 at temperatures low enough to be compatible with back-end manufacturing processes represents a particular advantage. The semiconducting oxide material 102, 206, 256, 306 or 406 may be deposited on sidewalls or conformably on any desired structure to a precise thickness, allowing the manufacture of transistors having any desired geometry.
In an embodiment, gate electrode 104, 208, 258, 308 or 408 includes at least one P-type work function metal or N-type work function metal, depending on whether the integrated circuit device 100, 200, 250, 270, 300 or 400 is to be included in a P-type transistor or an N-type transistor. For a P-type transistors, metals that may be used for the gate electrode 104, 208, 258, 308 or 408 may include, but are not limited to, ruthenium, palladium, platinum, cobalt, nickel, and conductive metal oxides (e.g., ruthenium oxide). For an N-type transistor, metals that may be used for the gate electrode 104, 208, 258, 308 or 408 include, but are not limited to, hafnium, zirconium, titanium, tantalum, aluminum, alloys of these metals, and carbides of these metals (e.g., hafnium carbide, zirconium carbide, titanium carbide, tantalum carbide, and aluminum carbide). In some embodiments, the gate electrode includes a stack of two or more metal layers, where one or more metal layers are work function metal layers and at least one metal layer is a fill metal layer. Further metal layers may be included for other purposes, such as to act as a barrier layer. In some implementations, the gate electrode 104, 208, 258, 308 or 408 may consist of a “U”-shaped structure that includes a bottom portion substantially parallel to the surface of the substrate and two sidewall portions that are substantially perpendicular to the top surface of the substrate. In another implementation, at least one of the metal layers that form the gate electrode may simply be a planar layer that is substantially parallel to the top surface of the substrate and does not include sidewall portions substantially perpendicular to the top surface of the substrate. In further implementations of the disclosure, the gate electrode may consist of a combination of U-shaped structures and planar, non-U-shaped structures. For example, the gate electrode may consist of one or more U-shaped metal layers formed atop one or more planar, non-U-shaped layers.
In an embodiment, gate dielectric layer 106, 214, 264, 314 or 414 is composed of a high-k material. For example, in one embodiment, the gate dielectric layer 106, 214, 264, 314 or 414 is composed of a material such as, but not limited to, hafnium oxide, hafnium oxy-nitride, hafnium silicate, lanthanum oxide, zirconium oxide, zirconium silicate, tantalum oxide, barium strontium titanate, barium titanate, strontium titanate, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, lead zinc niobate, or a combination thereof. In some implementations, the gate dielectric 106, 214, 264, 314 or 414 may consist of a “U”-shaped structure that includes a bottom portion substantially parallel to the surface of the substrate and two sidewall portions that are substantially perpendicular to the top surface of the substrate, as is depicted in
In some embodiments, the semiconducting oxide material 102, 206, 256, 306 or 406 is in contact with the gate dielectric layer 106, 214, 264, 314 or 414, respectively, an arrangement which may put an IGZO layer in contact with a high-k metal oxide layer. In other embodiments, an intermediate material is disposed between the semiconducting oxide material 102, 206, 256, 306 or 406 and the gate dielectric layer 106, 214, 264, 314 or 414. In some embodiments, an IGZO layer includes multiple regions of IGZO having different material properties. For example, an IGZO layer may include low indium content IGZO close to (e.g., in contact with) a high-k gate dielectric layer, and a high indium content IGZO close to (e.g., in contact with) the higher mobility semiconducting oxide channel material. High indium content IGZO may provide higher mobility and poorer interface properties relative to low indium content IGZO, while low indium content IGZO may provide a wider band gap, lower gate leakage, and better interface properties, although a lower mobility, relative to high indium content IGZO.
In an embodiment, dielectric spacers 272 are formed from a material such as silicon nitride, silicon oxide, silicon carbide, silicon nitride doped with carbon, and silicon oxynitride. Processes for forming sidewall spacers are well known in the art and generally include deposition and etching process steps. In some embodiments, a plurality of spacer pairs may be used. For example, two pairs, three pairs, or four pairs of sidewall spacers may be formed on opposing sides of the gate electrode 258.
In an embodiment, conductive contacts 108, 274, 354 or 454 act as contacts to source/drain regions of a TFT, or act directly as source/drain regions of the TFT. The conductive contacts 108, 274, 354 or 454 may be spaced apart by a distance that is the gate length of the transistor 100, 200, 250, 270, 300 or 400. In an embodiment, conductive contacts 358 or 458 directly contact a gate electrode. In some embodiments, the gate length is between 7 and 30 nanometers. In an embodiment, the conductive contacts 108, 274, 354, 358, 454 or 458 include one or more layers of metal and/or metal alloys, examples of which are described above in association with
In an embodiment, interconnect lines (and, possibly, underlying or overlying via structures), such as interconnect lines 116 (and overlying via 112), 356, 360, 456 or 460, described herein are composed of one or more metal or metal-containing conductive structures. The conductive interconnect lines are also sometimes referred to in the art as traces, wires, lines, metal, interconnect lines or simply interconnects. In a particular embodiment, each of the interconnect lines includes a barrier layer and a conductive fill material. In an embodiment, the barrier layer is composed of a metal nitride material, such as tantalum nitride or titanium nitride. In an embodiment, the conductive fill material is composed of a conductive material such as, but not limited to, Cu, Al, Ti, Zr, Hf, V, Ru, Co, Ni, Pd, Pt, W, Ag, Au or alloys thereof.
Interconnect lines described herein may be fabricated as a grating structure, where the term “grating” is used herein to refer to a tight pitch grating structure. In one such embodiment, the tight pitch is not achievable directly through conventional lithography. For example, a pattern based on conventional lithography may first be formed, but the pitch may be halved by the use of spacer mask patterning, as is known in the art. Even further, the original pitch may be quartered by a second round of spacer mask patterning. Accordingly, the grating-like patterns described herein may have conductive lines spaced at a constant pitch and having a constant width. The pattern may be fabricated by a pitch halving or pitch quartering, or other pitch division, approach.
In an embodiment, ILD materials described herein, such as ILD materials 350 or 450, are composed of or include a layer of a dielectric or insulating material. Examples of suitable dielectric materials include, but are not limited to, oxides of silicon (e.g., silicon dioxide (SiO2)), doped oxides of silicon, fluorinated oxides of silicon, carbon doped oxides of silicon, various low-k dielectric materials known in the arts, and combinations thereof. The interlayer dielectric material may be formed by conventional techniques, such as, for example, chemical vapor deposition (CVD), physical vapor deposition (PVD), or by other deposition methods.
In one aspect, a gate electrode and gate dielectric layer, e.g., gate electrode 104, 208, 258, 308 or 408 and gate dielectric layer 106, 214, 264, 314 or 414 may be fabricated by a replacement gate process. In such a scheme, dummy gate material such as polysilicon or silicon nitride pillar material, may be removed and replaced with permanent gate electrode material. In one such embodiment, a permanent gate dielectric layer is also formed in this process, as opposed to being carried through from earlier processing. In an embodiment, dummy gates are removed by a dry etch or wet etch process. In one embodiment, dummy gates are composed of polycrystalline silicon or amorphous silicon and are removed with a dry etch process including use of SF6. In another embodiment, dummy gates are composed of polycrystalline silicon or amorphous silicon and are removed with a wet etch process including use of aqueous NH4OH or tetramethylammonium hydroxide. In one embodiment, dummy gates are composed of silicon nitride and are removed with a wet etch including aqueous phosphoric acid.
In an embodiment, one or more approaches described herein contemplate essentially a dummy and replacement gate process in combination with a dummy and replacement contact process to arrive at structures described herein. In one such embodiment, the replacement contact process is performed after the replacement gate process to allow high temperature anneal of at least a portion of the permanent gate stack. For example, in a specific such embodiment, an anneal of at least a portion of the permanent gate structures, e.g., after a gate dielectric layer is formed. The anneal is performed prior to formation of the permanent contacts.
It is to be appreciated that not all aspects of the processes described above need be practiced to fall within the spirit and scope of embodiments of the present disclosure. For example, in one embodiment, dummy gates need not ever be formed prior to fabricating gate contacts over active portions of the gate stacks. The gate stacks described above may actually be permanent gate stacks as initially formed. Also, the processes described herein may be used to fabricate one or a plurality of semiconductor devices. One or more embodiments may be particularly useful for fabricating semiconductor devices at a 10 nanometer (10 nm) or smaller technology node.
In an embodiment, as is also used throughout the present description, lithographic operations are performed using 193 nm immersion lithography (i193), extreme ultra-violet (EUV) and/or electron beam direct write (EBDW) lithography, or the like. A positive tone or a negative tone resist may be used. In one embodiment, a lithographic mask is a trilayer mask composed of a topographic masking portion, an anti-reflective coating (ARC) layer, and a photoresist layer. In a particular such embodiment, the topographic masking portion is a carbon hardmask (CHM) layer and the anti-reflective coating layer is a silicon ARC layer.
In another aspect, the performance of a thin film transistor (TFT) may depend on the carrier mobility of the components in the TFT. For example, a material with a higher carrier mobility enables carriers to move more quickly in response to a given electric field than a material with a lower carrier mobility. Accordingly, high carrier mobilities may be associated with improved performance. Although shown and described above as single semiconducting oxide layers, in accordance with embodiments described herein, a layer of a semiconducting oxide, such as a layer of IGZO, is between a high-k gate dielectric material and a higher mobility semiconducting oxide channel material. Although IGZO has a relatively low mobility (approximately 10 cm2/V-s), the sub threshold swing of IGZO may be close to the conventional theoretical lower limit. In some embodiments, a thin layer of IGZO may directly border a channel material of choice, and may be sandwiched between the channel material and the high-k dielectric. The use of IGZO at the interface between the gate stack and the channel may achieve one or more of a number of advantages. For example, an IGZO interface may have a relatively small number of interface traps, defects at which carriers are trapped and released that impede performance. A TFT that includes an IGZO layer as a second semiconducting oxide material may exhibit desirably low gate leakage. When IGZO is used as an interface to a non-IGZO semiconducting oxide channel material (e.g., a thin film oxide semiconductor material having a higher mobility than IGZO), the benefits of the higher mobility channel material may be realized simultaneously with the good gate oxide interface properties provided by the IGZO. In accordance with one or more embodiments described herein, a gate-channel arrangement based on a dual semiconducting oxide layer channel enables the use of a wider array of thin film transistor channel materials, while achieving desirable gate control, than realizable using conventional approaches.
In an embodiment, the addition of a second thin film semiconductor around a first TFT material can provide one or more of mobility enhancement, improved short channel effects (SCEs) particularly if all conduction occurs in the second material. The second TFT material may be selected for strong oxygen bond capability in order to stabilize the TFT when exposed to downstream processing. In accordance with one embodiment, a higher mobility semiconducting oxide material is effectively wrapped in a lower mobility material semiconducting oxide that is more oxygen stable. The resulting structure may limit the negative effects of downstream high temperature processing operations or aggressive operations on the inner TFT material by having the highly stable outer material. An increased set of materials that can be chosen to maximize stability and mobility simultaneously may be achieved using such a dual material architecture.
In another aspect, the integrated circuit structures described herein may be included in an electronic device. As a first example of an apparatus that may include one or more of the TFTs disclosed herein,
Referring to
Referring to
The IC device 700 may include one or more device layers, such as device layer 704, disposed on the substrate 702. The device layer 704 may include features of one or more transistors 740 (e.g., TFTs described above) formed on the substrate 702. The device layer 704 may include, for example, one or more source and/or drain (S/D) regions 720, a gate 722 to control current flow in the transistors 740 between the S/D regions 720, and one or more S/D contacts 724 to route electrical signals to/from the S/D regions 720. The transistors 740 may include additional features not depicted for the sake of clarity, such as device isolation regions, gate contacts, and the like. The transistors 740 are not limited to the type and configuration depicted in
Electrical signals, such as power and/or input/output (I/O) signals, may be routed to and/or from the transistors 740 of the device layer 704 through one or more interconnect layers disposed on the device layer 704 (illustrated in
The interconnect structures 728 may be arranged within the interconnect layers 706-710 to route electrical signals according to a wide variety of designs (in particular, the arrangement is not limited to the particular configuration of interconnect structures 728 depicted in
In some embodiments, the interconnect structures 728 may include trench structures 728a (sometimes referred to as “lines”) and/or via structures 728b filled with an electrically conductive material such as a metal. The trench structures 728a may be arranged to route electrical signals in a direction of a plane that is substantially parallel with a surface of the substrate 702 upon which the device layer 704 is formed. For example, the trench structures 728a may route electrical signals in a direction in and out of the page from the perspective of
The interconnect layers 706-710 may include a dielectric material 726 disposed between the interconnect structures 728, as shown in
A first interconnect layer 706 (referred to as Metal 1 or “M1”) may be formed directly on the device layer 704. In some embodiments, the first interconnect layer 706 may include trench structures 728a and/or via structures 728b, as shown. The trench structures 728a of the first interconnect layer 706 may be coupled with contacts (e.g., the S/D contacts 724) of the device layer 704.
A second interconnect layer 708 (referred to as Metal 2 or “M2”) may be formed directly on the first interconnect layer 706. In some embodiments, the second interconnect layer 708 may include via structures 728b to couple the trench structures 728a of the second interconnect layer 708 with the trench structures 728a of the first interconnect layer 706. Although the trench structures 728a and the via structures 728b are structurally delineated with a line within each interconnect layer (e.g., within the second interconnect layer 708) for the sake of clarity, the trench structures 728a and the via structures 728b may be structurally and/or materially contiguous (e.g., simultaneously filled during a dual-damascene process) in some embodiments.
A third interconnect layer 710 (referred to as Metal 3 or “M3”) (and additional interconnect layers, as desired) may be formed in succession on the second interconnect layer 708 according to similar techniques and configurations described in connection with the second interconnect layer 708 or the first interconnect layer 706.
The IC device 700 may include a solder resist material 734 (e.g., polyimide or similar material) and one or more bond pads 736 formed on the interconnect layers 706-710. The bond pads 736 may be electrically coupled with the interconnect structures 728 and configured to route the electrical signals of the transistor(s) 740 to other external devices. For example, solder bonds may be formed on the one or more bond pads 736 to mechanically and/or electrically couple a chip including the IC device 700 with another component (e.g., a circuit board). The IC device 700 may have other alternative configurations to route the electrical signals from the interconnect layers 706-710 than depicted in other embodiments. For example, the bond pads 736 may be replaced by or may further include other analogous features (e.g., posts) that route the electrical signals to external components.
Referring to
In some embodiments, the circuit board 802 may be a printed circuit board (PCB) including multiple metal layers separated from one another by layers of dielectric material and interconnected by electrically conductive vias. Any one or more of the metal layers may be formed in a desired circuit pattern to route electrical signals (optionally in conjunction with other metal layers) between the components coupled to the circuit board 802. In other embodiments, the circuit board 802 may be a non-PCB substrate.
The IC device assembly 800 illustrated in
The package-on-interposer structure 836 may include an IC package 820 coupled to an interposer 804 by coupling components 818. The coupling components 818 may take any suitable form for the application, such as the forms discussed above with reference to the coupling components 816. Although a single IC package 820 is shown in
The interposer 804 may be formed of an epoxy resin, a fiberglass-reinforced epoxy resin, a ceramic material, or a polymer material such as polyimide. In some implementations, the interposer 804 may be formed of alternate rigid or flexible materials that may include the same materials described above for use in a semiconductor substrate, such as silicon, germanium, and other group III-V and group IV materials. The interposer 804 may include metal interconnects 808 and vias 810, including but not limited to through-silicon vias (TSVs) 806. The interposer 804 may further include embedded devices 814, including both passive and active devices. Such devices may include, but are not limited to, capacitors, decoupling capacitors, resistors, inductors, fuses, diodes, transformers, sensors, electrostatic discharge (ESD) devices, and memory devices. More complex devices such as radio-frequency (RF) devices, power amplifiers, power management devices, antennas, arrays, sensors, and microelectromechanical systems (MEMS) devices may also be formed on the interposer 804. The package-on-interposer structure 836 may take the form of any of the package-on-interposer structures known in the art.
The IC device assembly 800 may include an IC package 824 coupled to the first face 840 of the circuit board 802 by coupling components 822. The coupling components 822 may take the form of any of the embodiments discussed above with reference to the coupling components 816, and the IC package 824 may take the form of any of the embodiments discussed above with reference to the IC package 820.
The IC device assembly 800 illustrated in
Embodiments disclosed herein may be used to manufacture a wide variety of different types of integrated circuits and/or microelectronic devices. Examples of such integrated circuits include, but are not limited to, processors, chipset components, graphics processors, digital signal processors, micro-controllers, and the like. In other embodiments, semiconductor memory may be manufactured. Moreover, the integrated circuits or other microelectronic devices may be used in a wide variety of electronic devices known in the arts. For example, in computer systems (e.g., desktop, laptop, server), cellular phones, personal electronics, etc. The integrated circuits may be coupled with a bus and other components in the systems. For example, a processor may be coupled by one or more buses to a memory, a chipset, etc. Each of the processor, the memory, and the chipset, may potentially be manufactured using the approaches disclosed herein.
Depending on its applications, computing device 900 may include other components that may or may not be physically and electrically coupled to the board 902. These other components include, but are not limited to, volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flash memory, a graphics processor, a digital signal processor, a crypto processor, a chipset, an antenna, a display, a touchscreen display, a touchscreen controller, a battery, an audio codec, a video codec, a power amplifier, a global positioning system (GPS) device, a compass, an accelerometer, a gyroscope, a speaker, a camera, and a mass storage device (such as hard disk drive, compact disk (CD), digital versatile disk (DVD), and so forth).
The communication chip 906 enables wireless communications for the transfer of data to and from the computing device 900. The term “wireless” and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communications channels, etc., that may communicate data through the use of modulated electromagnetic radiation through a non-solid medium. The term does not imply that the associated devices do not contain any wires, although in some embodiments they might not. The communication chip 906 may implement any of a number of wireless standards or protocols, including but not limited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE 802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well as any other wireless protocols that are designated as 3G, 4G, 5G, and beyond. The computing device 900 may include a plurality of communication chips 906. For instance, a first communication chip 906 may be dedicated to shorter range wireless communications such as Wi-Fi and Bluetooth and a second communication chip 906 may be dedicated to longer range wireless communications such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.
The processor 904 of the computing device 900 includes an integrated circuit die packaged within the processor 904. In some implementations of the disclosure, the integrated circuit die of the processor includes one or more thin film transistors having alloying source or drain metals, in accordance with implementations of embodiments of the disclosure. The term “processor” may refer to any device or portion of a device that processes electronic data from registers and/or memory to transform that electronic data into other electronic data that may be stored in registers and/or memory.
The communication chip 906 also includes an integrated circuit die packaged within the communication chip 906. In accordance with another implementation of embodiments of the disclosure, the integrated circuit die of the communication chip includes one or more thin film transistors having alloying source or drain metals, in accordance with implementations of embodiments of the disclosure.
In further implementations, another component housed within the computing device 900 may contain an integrated circuit die that includes one or more thin film transistors having alloying source or drain metals, in accordance with implementations of embodiments of the disclosure.
In various implementations, the computing device 900 may be a laptop, a netbook, a notebook, an ultrabook, a smartphone, a tablet, a personal digital assistant (PDA), an ultra mobile PC, a mobile phone, a desktop computer, a server, a printer, a scanner, a monitor, a set-top box, an entertainment control unit, a digital camera, a portable music player, or a digital video recorder. In further implementations, the computing device 900 may be any other electronic device that processes data.
Thus, embodiments described herein include thin film transistors having alloying source or drain metals, and methods of fabricating thin film transistors having alloying source or drain metals.
The above description of illustrated implementations of embodiments of the disclosure, including what is described in the Abstract, is not intended to be exhaustive or to limit the disclosure to the precise forms disclosed. While specific implementations of, and examples for, the disclosure are described herein for illustrative purposes, various equivalent modifications are possible within the scope of the disclosure, as those skilled in the relevant art will recognize.
These modifications may be made to the disclosure in light of the above detailed description. The terms used in the following claims should not be construed to limit the disclosure to the specific implementations disclosed in the specification and the claims. Rather, the scope of the disclosure is to be determined entirely by the following claims, which are to be construed in accordance with established doctrines of claim interpretation.
Example embodiment 1: An integrated circuit structure includes a semiconducting oxide material over a gate electrode. A pair of conductive contacts is on a first region of the semiconducting oxide material. A second region of the semiconducting oxide material is between the pair of conductive contacts. The pair of conductive contacts includes a metal species. The metal species is in the first region of the semiconducting oxide material but not in the second region of the semiconducting oxide material.
Example embodiment 2: The integrated circuit structure of example embodiment 1, wherein the metal species is selected from the group consisting of Ag, Al, Ni, Co, Fe, Cu, Cr, Mn, Mo, Ta, Ir and Ru.
Example embodiment 3: The integrated circuit structure of example embodiment 1 or 2, wherein the metal species in the first region of the semiconducting oxide bonds to oxygen atoms of the first region of the semiconducting oxide material.
Example embodiment 4: The integrated circuit structure of example embodiment 1, 2 or 3, wherein the semiconducting oxide material includes a material selected from the group consisting of indium gallium zinc oxide, tin oxide, antimony oxide, indium oxide, indium tin oxide, titanium oxide, zinc oxide, indium zinc oxide, gallium oxide, titanium oxynitride, ruthenium oxide and tungsten oxide.
Example embodiment 5: The integrated circuit structure of example embodiment 1, 2, 3 or 4, further including a gate dielectric layer between the gate electrode and the semiconducting oxide material.
Example embodiment 6: The integrated circuit structure of example embodiment 5, wherein the gate dielectric layer includes a layer of a high-k dielectric material directly on the semiconducting oxide material.
Example embodiment 7: An integrated circuit structure includes an insulator structure above a substrate. The insulator structure has a topography that varies along a plane parallel with a global plane of the substrate. A semiconducting oxide material is on the insulator structure. The semiconducting oxide material is conformal with the topography of the insulator structure. A gate electrode is over a first portion of the semiconducting oxide material on the insulator structure. The gate electrode has a first side opposite a second side. A first conductive contact is adjacent the first side of the gate electrode. The first conductive contact is over a second portion of the semiconducting oxide material on the insulator structure. A second conductive contact is adjacent the second side of the gate electrode. The second conductive contact is over a third portion of the semiconducting oxide material on the insulator structure. The first and second conductive contacts include a metal species, and the metal species is in the second and third portions of the semiconducting oxide material but not in the first portion of the semiconducting oxide material.
Example embodiment 8: The integrated circuit structure of example embodiment 7, wherein the insulator structure includes one or more fins. Individual ones of the fins have a top and sidewalls. The semiconducting oxide material is on the top and sidewalls of the individual ones of the fins.
Example embodiment 9: The integrated circuit structure of example embodiment 7 or 8, wherein the semiconducting oxide material includes indium gallium zinc oxide.
Example embodiment 10: The integrated circuit structure of example embodiment 7, 8 or 9, wherein the semiconducting oxide material includes a material selected from the group consisting of tin oxide, antimony oxide, indium oxide, indium tin oxide, titanium oxide, zinc oxide, indium zinc oxide, gallium oxide, titanium oxynitride, ruthenium oxide and tungsten oxide.
Example embodiment 11: The integrated circuit structure of example embodiment 7, 8, 9 or 10, further including a gate dielectric layer between the gate electrode and the first portion of the semiconducting oxide material on the insulator structure.
Example embodiment 12: The integrated circuit structure of example embodiment 11, wherein the gate dielectric layer includes a layer of a high-k dielectric material directly on the semiconducting oxide material.
Example embodiment 13: The integrated circuit structure of example embodiment 7, 8, 9, 10, 11 or 12, further including a first dielectric spacer between the first conductive contact and the first side of the gate electrode, the first dielectric spacer over a fourth portion of the semiconducting oxide material on the insulator structure. A second dielectric spacer is between the second conductive contact and the second side of the gate electrode, the second dielectric spacer over a fifth portion of the semiconducting oxide material on the insulator structure.
Example embodiment 14: The integrated circuit structure of example embodiment 13, further including a gate dielectric layer between the gate electrode and the first portion of the semiconducting oxide material on the insulator structure, wherein the gate dielectric layer is further along the first dielectric spacer and the second dielectric spacer.
Example embodiment 15: The integrated circuit structure of example embodiment 14, wherein the gate dielectric layer includes a layer of a high-k dielectric material directly on the semiconducting oxide material.
Example embodiment 16: An integrated circuit structure includes an insulator structure above a substrate. The insulator structure has a trench therein, the trench having sidewalls and a bottom. A semiconducting oxide material is in the trench in the insulator structure, the semiconducting oxide material conformal with the sidewalls and bottom of the trench. A gate dielectric layer is on the semiconducting oxide material in the trench, the gate dielectric layer conformal with the semiconducting oxide material conformal with the sidewalls and bottom of the trench. A gate electrode is on the gate dielectric layer in the trench, the gate electrode having a first side opposite a second side and having an exposed top surface. A first conductive contact is laterally adjacent the first side of the gate electrode, the first conductive contact on a first portion of the semiconducting oxide material conformal with the sidewalls of the trench. A second conductive contact is laterally adjacent the second side of the gate electrode, the second conductive contact on a second portion of the semiconducting oxide material conformal with the sidewalls of the trench. The first and second conductive contacts include a metal species, and the metal species is in the first and second portions of the semiconducting oxide material but not in a region of the semiconducting oxide material beneath the gate electrode.
Example embodiment 17: The integrated circuit structure of example embodiment 16, further including a third conductive contact over and in contact with the exposed top surface of the gate electrode.
Example embodiment 18: The integrated circuit structure of example embodiment 16 or 17, wherein the first conductive contact is in a second trench in the insulator structure, and the third conductive contact is in a third trench in the insulator structure.
Example embodiment 19: The integrated circuit structure of example embodiment 16, 17 or 18, wherein the semiconducting oxide material includes indium gallium zinc oxide.
Example embodiment 20: The integrated circuit structure of example embodiment 16, 17, 18 or 19, wherein the semiconducting oxide material includes a material selected from the group consisting of tin oxide, antimony oxide, indium oxide, indium tin oxide, titanium oxide, zinc oxide, indium zinc oxide, gallium oxide, titanium oxynitride, ruthenium oxide and tungsten oxide.
Example embodiment 21: The integrated circuit structure of example embodiment 16, 17, 18, 19 or 20, wherein the gate dielectric layer includes a layer of a high-k dielectric material directly on the semiconducting oxide material.
Example embodiment 22: The integrated circuit structure of example embodiment 16, 17, 18, 19, 20 or 21, wherein the sidewalls of the trench have a corrugated topography.
