Patent Application
20210215434
The invention relates to heat dissipation technology, particularly to a thin type vapor chamber and a method for making the same.
With continuous increase of operational speed of electronic components, heat generated therefrom also becomes higher and higher. To solve this problem, vapor chambers with great heat transfer property have been provided to electronic components to implement heat transfer. However, current vapor chambers still have drawbacks in both heat transfer and thinning.
A conventional vapor chamber includes an upper plate, a lower plate, a wick structure and a working fluid. When manufacturing, the wick structure is disposed inside both the upper plate and the lower plate first, then combine the upper plate and the lower plate by welding to form a chamber between the upper plate and the lower plate, next inject the working fluid into the chamber, and finally, perform degassing and sealing to finish a vapor chamber.
However, such a vapor chamber has an effect of heat transfer, but there are drawbacks. The two plates are combined by welding their peripheries, the joint between the two plates tends to generate stress effect and deformation. Also, processing the wick structure and welding makes the manufacture complicated and difficult. Further, a vapor chamber made by the above process cannot reduce in overall thickness.
An object of the invention is to provide a thin type vapor chamber and a method for making the same, which makes the manufacturing process easy and avoids deformation of metal plates.
To accomplish the above object, the invention provides a thin type vapor chamber including a first metal plate, a second metal plate and a working fluid. The first metal plate is formed with a wick structure and a support structure having support elements. The second metal plate correspondingly covers and is fixed onto the first metal plate by a diffusion bonding technology. An end of each support element is in contact with the second metal plate. A chamber is formed between the first metal plate and the second metal plate. The working fluid is filled in the chamber.
To accomplish the above object, the invention provides a method for making a thin type vapor chamber. The method includes the steps of: a) providing a first metal plate and a second metal plate; b) forming a wick structure and a support structure by etching, wherein the support structure comprises support elements; c) correspondingly combining the second metal plate and the first metal plate by a diffusion bonding technology, wherein an end of each support element is in contact with the second metal plate, and a chamber is formed between the first metal plate and the second metal plate; and d) injecting a working fluid in the chamber and performing degassing and sealing.
The invention also has the following functions. No soldering agent is needed in the assembling process to save material costs. When the first metal plate and the second metal plate have been assembled by the diffusion bonding technology, their junction is strong, deformation of the junction can be reduced and no stress effect occurs.
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The first metal plate 10 may be made of aluminum, copper or their alloy and includes a substrate 11. A surface of the substrate 11 is formed with a wick structure 12 by chemical or physical etching. The wick structure 12 in this embodiment consists of first grooves 121 and second grooves 122. Each first groove 121 and each second groove 122 are arranged aslant interlaced. A support structure 13 is formed between each first groove 121 and each second groove 122. The support structure 13 includes support elements 131. In this embodiment, the support element 131 is substantially a cuboid block, but not limited to this.
Furthermore, a periphery to be connected 14 is formed on the substrate 11 outside the wick structure 12 and the support structure 13. In this embodiment, the periphery to be connected 14 is a substantially rectangular hollow frame, and a thickness of the periphery to be connected 14 is the same as that of each support element 131.
The second metal plate 20 may also be made of aluminum, copper or their alloy. The second metal plate 20 in this embodiment is a flat sheet and correspondingly covers and is fixed onto the first metal plate 10 by a diffusion bonding technology. An end of each support element 131 is in contact with the second metal plate 20. A chamber is formed between the first metal plate 10 and the second metal plate 20. The chamber is composed of the first grooves 121 and the second grooves 122. The diffusion bonding technology makes both the periphery to be connected 14 and ends of the support elements 131 attached to and connected to the second metal plate 20 without the third medium (such as solder or flux).
The working fluid 30 may be pure water (as shown in
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The second metal plate 20 in this embodiment is a flat sheet and correspondingly covers and is fixed onto the first metal plate 10 by a diffusion bonding technology so as to make both the periphery to be connected 14, 24 and ends of the support elements 131, 231 attached to and connected with each other without the third medium.
Please refer to
Please refer to
a) providing a first metal plate 10 and a second metal plate 20;
b) forming a wick structure 12 and a support structure 13 by etching, wherein support structure 13 includes support elements 131;
c) correspondingly combining the second metal plate 20 and the first metal plate 10 by a diffusion bonding technology, wherein an end of each support element 131 is in contact with the second metal plate 20, and a chamber is formed between the first metal plate 10 and the second metal plate 20; and
d) injecting a working fluid 30 in the chamber and performing degassing and sealing.
It will be appreciated by persons skilled in the art that the above embodiments have been described by way of example only and not in any limitative sense, and that various alterations and modifications are possible without departure from the scope of the invention as defined by the appended claims.
