Patent Application
20120299587
The need for small, low cost three-axis magnetic sensors is growing. Producing sensors sensitive in three orthogonal directions is currently challenging because of the difficulty in forming a single die having both a vertical sensor and horizontal sensors. Traditional technologies involve the rotation of one sensor die so that it provides sensitivity in vertical direction, and then mounting the rotated die onto a substrate or heat frame together with one or more sensors dies providing sensitivity along horizontal axes. These approaches suffer from the difficulty involved in precisely aligning and mounting the sensors dies in such a way to achieve the desired degree of axis orthogonality.
For the reasons stated above and for other reasons stated below which will become apparent to those skilled in the art upon reading and understanding the specification, there is a need in the art for improved three-axis magnetic sensors
The Embodiments of the present invention provide methods and systems for improved three-axis magnetic sensors and will be understood by reading and studying the following specification.
Systems and methods for three-axis magnetic sensors are provided. In one embodiment, a three-axis magnetic sensor formed on a single substrate comprises: an in-plane two-axis magnetic sensor comprising at least one of either a magnetic-resistance (MR) sensor or a magnetic-inductive (MI) sensor formed on the single substrate; and an out-of-plane magnetic sensor comprising a Hall effect sensor formed on the single substrate. The in-plane two-axis magnetic sensor measures magnetic fields in a first plane parallel to a plane of the substrate, and the out-of-plane magnetic sensor measures magnetic fields along an axis orthogonal to the first plane.
Embodiments of the present invention can be more easily understood and further advantages and uses thereof more readily apparent, when considered in view of the description of the preferred embodiments and the following figures in which:
In accordance with common practice, the various described features are not drawn to scale but are drawn to emphasize features relevant to the present invention. Reference characters denote like elements throughout figures and text.
In the following detailed description, reference is made to the accompanying drawings that form a part hereof, and in which is shown by way of specific illustrative embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention, and it is to be understood that other embodiments may be utilized and that logical, mechanical and electrical changes may be made without departing from the scope of the present invention. The following detailed description is, therefore, not to be taken in a limiting sense.
Embodiments of the present invention provide chip packages that comprise orthogonal 3-dimensional sensor arrangements by combining two different sensor technologies on a common base. More specifically, embodiments of the present invention provide for 3-dimensional sensor arrangements by combining magnetic sensors (such as Magneto-Resistive (MR) and/or and Magneto-Inductive (MI) sensors, for example), which are sensitive along the plane of the silicon on which they are formed, with vertically sensitive Hall effect magnetic sensors. In one embodiment, these sensors are incorporated into an Application Specific Integrated Circuit (ASIC). Such embodiments provide solutions for realizing devices such as electronic compasses or other devices that utilize the Earth's magnetic field for orientation or navigation purposes.
Magneto-Resistive (MR) sensors (including, for example, anisotropic magneto-resistance (AMR), Giant Magneto-Resistance (GMR), and Tunnel Magneto-resistance (TMR) sensors) and Magneto-Inductive (MI) sensors are sensitive to magnetic fields in plane to the die surface. As such, these sensors are known as in-plane sensors. In contrast, Hall effect sensors are sensitive to magnetic fields perpendicular to the plane of the die surface and are known as out-of-plane sensors. By combining in-plane and out-of-plane sensors, embodiments of the present invention provide for less costly and more size efficient methods of creating a 3-axes magnetic sensor than die rotation methods.
The single chip die 118 is electrically coupled to ASIC 117 via a first plurality of wirebond connections 119. ASIC 117 is in turn electrically coupled to substrate 120 via a second plurality of wirebond connections 122. In this way, electrical signals representing measurements produced by sensors 115 and 116 are delivered devices external to sensor package 110. Although
From a manufacturing standpoint, because two different sensor technologies are combined (that is, MR/MI sensor technology and Hall sensor technology), two distinct sets of process tools are required to form the sensors on the common substrate. That is, the process tools used to form MR/MI sensors are based on different underlying technologies than the process tools used to form Hall sensors. For example, thin film MR/MI processing utilizes technologies such as photolithography and requires precision deposition tools for sputtering an MR/MI substance layers onto an electrically insulating base layer. Hall sensors, in contrast, are semiconductor devices formed from material such as gallium arsenide (GaAs), indium antimonide (InSb) or indium arsenide (InAs). Once the sensors are formed, integrating the sensors within a common ASIC utilize standard manufacturing processes with no need to rotate die components to achieve the desired configuration of three orthogonal sensor. For example wirebonding of the sensors can be performed using normal techniques from above to create connections of the appropriate thickness. In addition to wirebonds (119, 122), other device interconnections can be made using standard wafer processing, through silicon vias (TSV, such as shown at 124), wafer bumps, wafer reconstitution, or other know techniques.
As illustrated in
The method proceeds to 320 with forming on the substrate an out-of-plane magnetic sensor comprising a Hall effect sensor. The in-plane two-axis magnetic sensor is oriented on the integrated circuit to measure magnetic fields in a first plane parallel to the plane of the substrate, and the out-of-plane magnetic sensor is oriented in the integrated circuit to measure magnetic field along an axis orthogonal to the first plane. In one embodiment, the out-of-plane magnetic sensor is formed from semiconductor materials such as gallium arsenide (GaAs), indium antimonide (InSb) or indium arsenide (InAs). As mentioned above, these in-plane and out-of-plane sensors may be processed on a single wafer and/or made as discrete die (chips) and packaged together.
The method proceeds to 330 with sealing the integrated circuit, the substrate, the in-plane two-axis magnetic sensor and the out-of-plane magnetic sensor within a chip package, wherein the chip package provides mechanical and electrical coupling of the integrated circuit to an external circuit. In one embodiment, the in-plane and out-of-plane sensors are electrically coupled to the integrated circuit using a plurality of wirebond connections and/or one or more through silicon vias (TSV). The integrated circuit is in turn electrically coupled to the substrate via a plurality of wirebond connections and/or one or more through silicon vias. In this way, measurements produced by both sensors are provided as electrical signals to devices external to the sensor package.
Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any arrangement, which is calculated to achieve the same purpose, may be substituted for the specific embodiment shown. This application is intended to cover any adaptations or variations of the present invention. Therefore, it is manifestly intended that this invention be limited only by the claims and the equivalents thereof.
