The present invention relates generally to power converters, and more specifically to switch mode power converters.
Electronic devices use power to operate. Switched mode power converters are commonly used due to their high efficiency, small size and low weight to power many of today's electronics. Conventional wall sockets provide a high voltage alternating current. In a switching power converter, a high voltage alternating current (ac) input is converted to provide a well-regulated direct current (dc) output through an energy transfer element. The switched mode power converter controller usually provides output regulation by sensing one or more inputs representative of one or more output quantities and controlling the output in a closed loop. In operation, a switch is utilized to provide the desired output by varying the duty cycle (typically the ratio of the on time of the switch to the total switching period), varying the switching frequency, or varying the number of pulses per unit time of the switch in a switched mode power converter.
Typical losses experienced in a power converter are conduction losses and switching losses. Conduction losses and switching losses occur due to the electrical resistance in the circuit and the parasitic capacitance that is switched by the power converter, particularly when the power switch is a transistor. When the power switch conducts current, the resistance of the circuit along with the current passing in the circuit generates conduction loss. Switching losses are generally associated with the losses which occur while the power switch of the power converter is transitioning between an ON state and an OFF state or vice versa. In one example, a switch that is ON (or closed) may conduct current, while a switch that is OFF (or open) cannot conduct current. When the power switch is open, voltage across the switch stores energy in the parasitic capacitance. The parasitic capacitance discharges when the power switch closes, dissipating the energy stored in the parasitic capacitance in the resistance of the power switch to produce switching loss. Further, switching losses may result from having a non-zero voltage across the power switch when the power switch turns ON, or from having a non-zero current through the power switch when the power switch turns OFF.
Non-limiting and non-exhaustive embodiments of the present invention are described with reference to the following figures, wherein like reference numerals refer to like parts throughout the various views unless otherwise specified.
Corresponding reference characters indicate corresponding components throughout the several views of the drawings. Skilled artisans will appreciate that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help to improve understanding of various embodiments of the present invention. Also, common but well-understood elements that are useful or necessary in a commercially feasible embodiment are often not depicted in order to facilitate a less obstructed view of these various embodiments of the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one having ordinary skill in the art that the specific detail need not be employed to practice the present invention. In other instances, well-known materials or methods have not been described in detail in order to avoid obscuring the present invention.
Reference throughout this specification to “one embodiment”, “an embodiment”, “one example” or “an example” means that a particular feature, structure or characteristic described in connection with the embodiment or example is included in at least one embodiment of the present invention. Thus, appearances of the phrases “in one embodiment”, “in an embodiment”, “one example” or “an example” in various places throughout this specification are not necessarily all referring to the same embodiment or example. Furthermore, the particular features, structures or characteristics may be combined in any suitable combinations and/or subcombinations in one or more embodiments or examples. Particular features, structures or characteristics may be included in an integrated circuit, an electronic circuit, a combinational logic circuit, or other suitable components that provide the described functionality. In addition, it is appreciated that the figures provided herewith are for explanation purposes to persons ordinarily skilled in the art and that the drawings are not necessarily drawn to scale.
Switching losses of a power converter can be reduced by ensuring that the voltage across the power switch is substantially zero prior to the power switch turning ON. The voltage across the power switch is determined by sensing the drain terminal of the power switch. This sensing generally requires a separate pin for the power converter controller to receive the sensed voltage which can increase the overall cost of the controller.
In one example of the present disclosure, the power switch is a four terminal device and includes a first transistor, such as a junction field effect transistor (JFET) or a gallium nitride high-electron-mobility transistor (GaN HEMT), and a second transistor, such as a metal-oxide-semiconductor field effect transistor (MOSFET). The power switch includes a drain, source, gate, and tap. The drain of the power switch corresponds with the drain of the first transistor while the source and gate of the power switch correspond with the source and gate of the second transistor. Further, the tap corresponds to the source of the first transistor. In one example of the present disclosure, the voltage at the tap or current through the first transistor may be monitored to determine the voltage or current at the drain of the power switch. As such, the tap may be used to determine if the voltage across the power switch is above or below a threshold. The controller includes a tap sense circuit which senses the voltage at the tap or current through the first transistor and outputs an indicator signal which indicates if the voltage at the drain is above or below the threshold.
To illustrate,
The power converter 100 provides output power to a load 122 from an unregulated input voltage VIN 102, which may be a rectified and filtered ac line voltage or a dc input voltage. The input voltage VIN 102 is coupled to the energy transfer element 104. In some embodiments, the energy transfer element 104 may be a coupled inductor, transformer, or an inductor. The example energy transfer element 104 shown in
The primary winding 105 is further coupled to the power switch 110 and the power switch 110 is further coupled to input return 109. The voltage across the power switch 110 is denoted as power switch voltage VDS 138 (which is also the voltage across the parasitic capacitance CP 158). In one example, power switch 110 includes a first transistor Q1111 coupled to a second transistor Q2112. One end of the first transistor Q1111 is coupled to a drain 114 of power switch 110, and the other end of the first transistor Q1111 is coupled to a tap 116 of the power switch 110. The control of the first transistor Q1111 is coupled to the input return 109. One end of the second transistor Q2112 is also coupled to the drain 114 of power switch 114, which in one example is through the first transistor Q1111. The other end of the second transistor Q2112 is coupled to the source 115 of the power switch 110, which is also coupled to the input return 109. The control of the second transistor Q2112 is coupled to the gate 117 of the power switch 110.
To illustrate, the example depicted in
The secondary winding 106 is coupled to the output rectifier D1118 (exemplified as a diode). However, the output rectifier D1118 may be a transistor used as a synchronous rectifier. Output capacitor C2120 is shown as being coupled to the output rectifier D1118 and output return 119. The power converter 100 further includes circuitry to regulate the output, which is exemplified as output quantity UO 125. In general, the output quantity UO 125 is an output voltage VO 123, and output current IO 124, or a combination of the two. A sense circuit 126 is coupled to sense the output quantity UO 125 and to provide the feedback signal UFB 127, which is representative of the output quantity UO 125.
As shown, the controller 128 is coupled to receive the feedback signal UFB 127. The controller 128 is also coupled to receive the current sense signal 130 and provides the drive signal UDR 136. The current sense signal 130 is representative of the drain current ID 129 received at the drain 114 of the power switch 110 and may be a voltage or current signal. In addition, the controller 128 provides drive signal UDR 136 to the power switch 110 to control various switching parameters to control the transfer of energy from the input of power converter 100 through the energy transfer element 104 to the output of power converter 100. Examples of such parameters may include switching frequency (or period), duty cycle, ON and OFF times of the power switch 110, or varying the number of pulses per unit time of the power switch 110. Power switch 110 (second transistor Q2112) is opened and closed in response to the drive signal UDR 136. In operation, the switching of the power switch 110/second transistor Q2112 produces a pulsating secondary current at the output rectifier D1118. The secondary current is filtered by the output capacitor C2120 to produce a substantially constant output voltage VO 123, output current IO 124, or a combination of the two. The controller 128 may be implemented as a monolithic integrated circuit or may be implemented with discrete electrical components or a combination of discrete and integrated components. Controller 128 and power switch 110 could form part of an integrated circuit that is manufactured as either a hybrid or monolithic integrated circuit.
Controller 128 includes the drive circuit 132 and the tap sense circuit 134. The tap sense circuit 134 is coupled to receive either the voltage at node 113 or the current through the first transistor Q1111 via the tap 116. The tap sense circuit 134 compares the voltage at node 113/tap 116 or the current through the first transistor Q1111 to a threshold and outputs the indicator signal UZ 135, which indicates if the voltage at the node 113/tap 116 or the current through the first transistor Q1111 is above or below the threshold. The voltage and current at the source of the first transistor Q1111 follows the voltage and current at the drain of the first transistor Q1111 (drain terminal 114) when the voltage at the drain of the first transistor Q1111 (drain terminal 114) is less than the pinch-off voltage of the first transistor Q1111. As such, the tap sense circuit 134 can determine if the voltage at the drain 114 is above or below the threshold if the threshold is less than the pinch off voltage of the first transistor Q1111. The drive circuit 132 is coupled to receive the feedback signal UFB 127, current sense signal 130, and the indicator signal UZ 135 to output the drive signal UDR 136. In one embodiment, the drive circuit 132 does not turn on the power switch 110 until the indicator signal UZ 135 indicates that the voltage at the tap 116 or the current through the first transistor Q1111 is less than the threshold (and as such, the voltage at the drain terminal 114 is less than the threshold). In one example, the threshold could be set to near zero and as such the power switch 110 is not turned on until the voltage at the drain terminal 114 is approximately zero volts or near zero voltage. In one example, the threshold could be set to near zero amps and as such the power switch 110 is not turned on until the current at the drain 114 is approximately zero or near zero amps.
Between times t2 349 and t3 350, the drain voltage VD 314 is above the pinch-off voltage VP 340 of the first transistor Q1311. As discussed above, the tap voltage/current VTAP/ITAP 345 is substantially equal to the pinch-off voltage VP 340 or maximum current IM of the first transistor Q1311, respectively. However, between times t3 350 and t4 351, the drain voltage VD 314 falls below the pinch-off voltage VP 340 and the tap voltage/current VTAP/ITAP 345 substantially follows the drain voltage VD 314. In one example, the threshold TH 346 could be set to near zero and as such, the drive circuit 332 does not turn on the power switch 310 until when the tap voltage/current VTAP/ITAP 345 falls below the TH 346 as shown in
As illustrated, the resonant power converter 400 is coupled to receive an input voltage VIN 402 and provide output power to the load 422 coupled to the output of the resonant power converter 400. The high side switch S1453 that is coupled to receive the input voltage VIN 402 at one end and coupled to the low side switch S2410 at the other. The terminal between the high side switch S1453 and the low side switch S2410 may be referred to as the half bridge terminal with half bridge voltage VHB 456. In the example shown, the high side switch S1453 and low side switch S2410 are illustrated as including n-type metal-oxide-semiconductor field-effect transistors (MOSFETs) along with respective body diodes. The high side switch S1453 and the low side switch S2410 are controlled with first and second drive signals UHS 457 and ULS 436, respectively, such that the voltage across a primary winding 405 of the energy transfer element T1404 is substantially a square wave. Embodiments of the present disclosure may be utilized to sense the half bridge voltage VHB 456 using the tap 416 of low side switch S2410.
In the example shown, the low side switch S2410 includes a first transistor Q1411 and a second transistor Q2412 with its respective body diode. The first transistor Q1411 may be a JFET or a GaN HEMT while the second transistor Q2 may be a MOSFET. The drain 414 of the low side switch 410 (drain of the first transistor Q1411) is coupled to the high side switch S1452. The source 415 of the low side switch S2410 (source of the second transistor Q2412) is coupled to input return 409. The gate of first transistor Q1411 is also coupled to input return 409, while the gate of the second transistor Q2412 is the gate 417 (also referred to as control input) of the low side switch S2410, and is coupled to receive the second drive signal ULS 436 from the controller 428. Further, the source of the first transistor Q1411 is coupled to the drain of second transistor Q2412 and is illustrated as node 413, which is coupled to the tap 416. As will be further discussed, the voltage the tap 416 (node 413) or the current through the first transistor Q1411 may be monitored to sense the voltage on the drain 414 of the low side switch S2410 or the half bridge voltage VHB 456.
The energy transfer element T1404 includes the primary winding 405, a first output winding 406, and a second output winding 407. The first output winding 406 and the second output winding 407 are center tapped, or in other words, the terminal between the first output winding 406 and the second output winding 407 is coupled to output return 419. The first output winding 406 is also coupled to rectifier D1418, while the second output winding 407 is coupled to the rectifier D2421. Energy is transferred and rectified by rectifier D1418 when the high side switch S1453 is turned ON and the low side switch S2410 is OFF. When the high side switch S1453 is OFF and the low side switch S2410 is ON, energy is transferred and rectified by rectifier D2421. One end of the output capacitor CO 420 is coupled to both rectifiers D1418 and D2421, while the other end of the output capacitor CO 420 is coupled to output return 419. The load 422 is coupled across the output capacitor CO 420. An output is provided to the load 422 and may be provided as either an output voltage VO 423, an output current IO 424, or a combination of the two. The resonant power converter 400 further includes circuitry to regulate the output, which is exemplified as output quantity UO 425. The output quantity UO 425 may be either an output voltage VO 423, an output current IO 423, or a combination of the two. A sense circuit 426 is coupled to sense the output quantity UO 425 and to provide feedback signal UFB 427 to the controller 428.
Similar to the controller 128 discussed with respect to
To illustrate, the example depicted in
Similar to what is discussed above, a tap sense circuit compares the voltage or current at tap 516 and outputs an indicator signal UZ which indicates if the voltage at the tap 516 or the current through the first transistor 511 is above or below a threshold. The voltage and current at the source of the first transistor Q1511 follows the voltage and current at the drain of the first transistor Q1511 (drain 514) when the voltage at the drain of the first transistor Q1511 (drain terminal 514) is less than the pinch-off voltage of the first transistor Q1511. As such, the tap sense circuit can determine if the voltage at the drain terminal 514 is above or below the threshold if the threshold is less than the pinch off voltage of the first transistor Q1511.
The above description of illustrated examples of the present invention, including what is described in the Abstract, are not intended to be exhaustive or to be limitation to the precise forms disclosed. While specific embodiments of, and examples for, the invention are described herein for illustrative purposes, various equivalent modifications are possible without departing from the broader spirit and scope of the present invention. Indeed, it is appreciated that the specific example voltages, currents, frequencies, power range values, times, etc., are provided for explanation purposes and that other values may also be employed in other embodiments and examples in accordance with the teachings of the present invention.
Number | Name | Date | Kind |
---|---|---|---|
4754310 | Coe | Jun 1988 | A |
4811075 | Eklund | Mar 1989 | A |
4893158 | Mihara et al. | Jan 1990 | A |
5014178 | Balakrishnan | May 1991 | A |
5086364 | Leipold et al. | Feb 1992 | A |
5146298 | Eklund | Sep 1992 | A |
5164659 | Schultz et al. | Nov 1992 | A |
5216275 | Chen | Jun 1993 | A |
5282107 | Balakrishnan | Jan 1994 | A |
5285369 | Balakrishnan | Feb 1994 | A |
5313082 | Eklund | May 1994 | A |
5313381 | Balakrishnan | May 1994 | A |
5438215 | Tihanyi | Aug 1995 | A |
5637898 | Baliga | Jun 1997 | A |
5973360 | Tihanyi | Oct 1999 | A |
5977763 | Loughmiller et al. | Nov 1999 | A |
5998833 | Baliga | Dec 1999 | A |
6184555 | Tihanyi et al. | Feb 2001 | B1 |
6207994 | Rumennick et al. | Mar 2001 | B1 |
6388286 | Baliga | May 2002 | B1 |
6388853 | Balakrishnan et al. | May 2002 | B1 |
6449207 | Sher et al. | Sep 2002 | B2 |
6525372 | Baliga | Feb 2003 | B2 |
6627958 | Letavic et al. | Sep 2003 | B2 |
6635544 | Disney | Oct 2003 | B2 |
6640435 | Balakrishnan | Nov 2003 | B2 |
6668451 | Balakrishnan | Dec 2003 | B2 |
6750640 | Balakrishnan et al. | Jun 2004 | B2 |
6865093 | Disney | Mar 2005 | B2 |
6954057 | Balakrishnan et al. | Oct 2005 | B2 |
6987299 | Disney et al. | Jan 2006 | B2 |
7002398 | Disney | Feb 2006 | B2 |
7170756 | Balakrishnan | Jan 2007 | B2 |
7227733 | Balakrishnan et al. | Jan 2007 | B2 |
7205824 | Disney | Apr 2007 | B2 |
7221011 | Banerjee et al. | May 2007 | B2 |
7308754 | Balakrishnan | Dec 2007 | B2 |
7335944 | Banerjee et al. | Feb 2008 | B2 |
7336095 | Erickson et al. | Feb 2008 | B2 |
7400483 | Balakrishnan et al. | Jul 2008 | B2 |
7932738 | Banerjee et al. | Apr 2011 | B1 |
7998817 | Disney | Aug 2011 | B2 |
8120097 | Disney | Feb 2012 | B2 |
8305826 | Banerjee et al. | Nov 2012 | B2 |
8670220 | Pansier | Mar 2014 | B2 |
9219420 | Zhang et al. | Dec 2015 | B1 |
9479065 | Mao et al. | Oct 2016 | B2 |
9667154 | Colbeck | May 2017 | B2 |
20020175351 | Baliga | Nov 2002 | A1 |
20090322426 | Nyboe | Dec 2009 | A1 |
20100163990 | Ko | Jul 2010 | A1 |
20100301412 | Parthasarathy et al. | Dec 2010 | A1 |
20110272758 | Banerjee et al. | Nov 2011 | A1 |
20130176032 | Zimmanck | Jul 2013 | A1 |
20150062974 | Lund | Mar 2015 | A1 |
20170264281 | Mathad | Sep 2017 | A1 |
Entry |
---|
Horwitz et al., U.S. Appl. No. 15/486,191, filed Apr. 12, 2017. |
Fujihira, “Theory of Semiconductor Superjunction Devices,” Matsymoto Factory, Fuji Electric Co., Ltd., Apr. 12, 2001 Tsukama, Matsumoto 390, Japan; Graduate School of Engineering, Yamanashi University, Apr. 3, 2011 Takeda, Koufu 400, Japan. |
Fujihira, T., et al., “Simulated Superior Performances of Semiconductor Superjunction Devices,” Matsumoto Factory, Fuji Electrical Co., Ltd., Apr. 18, 2001 Tsukama, Matsumoto 390-0821, Japan; Graduate School of Engineering, Yamanashi University, until Mar. 31, 1998 Takeda, Koufu 400, Japan. |