The present disclosure relates generally to techniques for low visibility sensing of characteristics of a display.
This section is intended to introduce the reader to various aspects of art that may be related to various aspects of the present disclosure, which are described and/or claimed below. This discussion is believed to be helpful in providing the reader with background information to facilitate a better understanding of the various aspects of the present disclosure. Accordingly, it should be understood that these statements are to be read in this light, and not as admissions of prior art.
Electronic display panels are used in a plethora of electronic devices. These display panels typically consist of multiple pixels that emit light. These pixels may be formed using self-emissive units (e.g., light emitting diode) or pixels that utilize units that are backlit (e.g., liquid crystal diode). These pixels are usually controlled using transistors (e.g., thin film transistors) that utilize a driving threshold voltage to determine at which level the pixels are to be driven. However, threshold voltage transients may exist at the transistors due to hysteresis. Such fluctuations of the threshold voltage may cause flicker and/or image blur. During emission, especially at low refresh rates, some charge may be trapped for the driving transistor increasing the threshold voltage. Between frames, luminance drops occur due to the threshold voltage transients thereby leading to a visible flicker in the screen.
Furthermore, due to hysteresis, transistor threshold voltage is lower at low gray scale frames and higher at high gray scale level frames. Thus, during a transition from a low gray scale level frame to a high gray scale level frame, the first high gray scale level frame appears dimmer than later frames with the same gray scale levels due to a threshold voltage sampling error during the refresh period between the low and high gray scale level frames causing a flash going from dark to bright frames or blur of dark text on a light background during page scrolling.
A summary of certain embodiments disclosed herein is set forth below. It should be understood that these aspects are presented merely to provide the reader with a brief summary of these certain embodiments and that these aspects are not intended to limit the scope of this disclosure. Indeed, this disclosure may encompass a variety of aspects that may not be set forth below.
By asserting voltage stress on transistors (e.g., thin film transistors) during a first part of a refresh period the threshold voltage of the transistors is boosted. These boosted threshold voltage levels are set to a level to enable settling of the threshold voltage to an appropriate level for emission based on a gray scale level for the emission during a second part of the refresh period. The boosted threshold voltage level may be tuned by changing an amount of voltage stress applied to the transistors. By boosting the threshold voltage level regardless of previous gray scale level and depending only on a target emission threshold voltage level to set a threshold voltage, the likelihood of hysteresis-based artifacts is reduced.
Various aspects of this disclosure may be better understood upon reading the following detailed description and upon reference to the drawings in which:
One or more specific embodiments will be described below. In an effort to provide a concise description of these embodiments, not all features of an actual implementation are described in the specification. It should be appreciated that in the development of any such actual implementation, as in any engineering or design project, numerous implementation-specific decisions must be made to achieve the developers' specific goals, such as compliance with system-related and business-related constraints, which may vary from one implementation to another. Moreover, it should be appreciated that such a development effort might be complex and time consuming, but would nevertheless be a routine undertaking of design, fabrication, and manufacture for those of ordinary skill having the benefit of this disclosure.
As previously discussed, boosting all threshold voltages to a target boosted threshold voltage level based on future threshold voltage levels, dependence upon previous threshold voltage levels is reduced. Boosting the threshold voltages is performed by placing stress on transistors (e.g., thin film transistors) during a first part of a refresh period. These boosted threshold voltage levels are set to a level to enable settling of the threshold voltage to an appropriate level for emission based on a gray scale level for the emission during a second part of the refresh period. The boosted threshold voltage level may be tuned by changing an amount of voltage stress applied to the transistors. In some embodiments, a duration of settling to the boosted threshold voltage level may be dynamic or static. If static, the duration is predetermined to a length that ensures that any possible boosted threshold voltage level may be sufficiently settled to from any previous possible threshold voltage. If dynamic, the duration may be specific to a difference between a previous threshold voltage and a target boosted threshold voltage.
With the foregoing in mind and referring first to
In the electronic device 10 of
In certain embodiments, the display 18 may be a liquid crystal display (e.g., LCD), which may allow users to view images generated on the electronic device 10. In some embodiments, the display 18 may include a touch screen, which may allow users to interact with a user interface of the electronic device 10. Furthermore, it should be appreciated that, in some embodiments, the display 18 may include one or more light emitting diode (e.g., LED) displays, or some combination of LCD panels and LED panels.
The input structures 20 of the electronic device 10 may enable a user to interact with the electronic device 10 (e.g., pressing a button to increase or decrease a volume level, a camera to record video or capture images). The I/O interface 22 may enable the electronic device 10 to interface with various other electronic devices. Additionally or alternatively, the I/O interface 22 may include various types of ports that may be connected to cabling. These ports may include standardized and/or proprietary ports, such as USB, RS232, Apple's Lightning® connector, as well as one or more ports for a conducted RF link.
As further illustrated, the electronic device 10 may include the power source 24. The power source 24 may include any suitable source of power, such as a rechargeable lithium polymer (e.g., Li-poly) battery and/or an alternating current (e.g., AC) power converter. The power source 24 may be removable, such as a replaceable battery cell.
The interface(s) 26 enable the electronic device 10 to connect to one or more network types. The interface(s) 26 may also include, for example, interfaces for a personal area network (e.g., PAN), such as a Bluetooth network, for a local area network (e.g., LAN) or wireless local area network (e.g., WLAN), such as an 802.11 Wi-Fi network or an 802.15.4 network, and/or for a wide area network (e.g., WAN), such as a 3rd generation (e.g., 3G) cellular network, 4th generation (e.g., 4G) cellular network, or long term evolution (e.g., LTE) cellular network. The interface(s) 26 may also include interfaces for, for example, broadband fixed wireless access networks (e.g., WiMAX), mobile broadband Wireless networks (e.g., mobile WiMAX), and so forth.
By way of example, the electronic device 10 may represent a block diagram of the notebook computer depicted in
In certain embodiments, the electronic device 10 may take the form of a computer, a portable electronic device, a wearable electronic device, or other type of electronic device. Such computers may include computers that are generally portable (e.g., such as laptop, notebook, and tablet computers) as well as computers that are generally used in one place (e.g., such as conventional desktop computers, workstations and/or servers). In certain embodiments, the electronic device 10 in the form of a computer may be a model of a MacBook®, MacBook® Pro, MacBook Air®, iMac®, Mac® mini, or Mac Pro® available from Apple Inc. By way of example, the electronic device 10, taking the form of a notebook computer 30A, is illustrated in
The handheld device 30B may include an enclosure 32 to protect interior components from physical damage and to shield them from electromagnetic interference. The enclosure 32 may surround the display 18, which may display indicator icons. The indicator icons may indicate, among other things, a cellular signal strength, Bluetooth connection, and/or battery life. The I/O interfaces 22 may open through the enclosure 32 and may include, for example, an I/O port for a hard wired connection for charging and/or content manipulation using a connector and protocol, such as the Lightning connector provided by Apple Inc., a universal serial bus (e.g., USB), one or more conducted RF connectors, or other connectors and protocols.
The illustrated embodiments of the input structures 20, in combination with the display 18, may allow a user to control the handheld device 30B. For example, a first input structure 20 may activate or deactivate the handheld device 30B, one of the input structures 20 may navigate user interface to a home screen, a user-configurable application screen, and/or activate a voice-recognition feature of the handheld device 30B, while other of the input structures 20 may provide volume control, or may toggle between vibrate and ring modes. Additional input structures 20 may also include a microphone that may obtain a user's voice for various voice-related features, and a speaker to allow for audio playback and/or certain phone capabilities. The input structures 20 may also include a headphone input (not illustrated) to provide a connection to external speakers and/or headphones and/or other output structures.
Turning to
Similarly,
The severity and/or type of these artifacts may differ depending on a previous gray scale level and a target gray scale level.
As illustrated by the lines 130, 134, and 138, different previous gray scale levels may cause the VTH settle to different voltage levels thereby resulting in different luminance levels, as illustrated in
To reduce the likelihood of the blur, flicker, and first frame level issues, VGS may undergo stress during the refresh period 126 instead of being allowed to settle to VTH. This increase in VGS in turn boosts VTH to a common level regardless of previous gray scale level.
During a refresh period for the illumination element, the processors 12 induce stress on a voltage of a controlling transistor to boost VTH before settling (block 204). The voltage may include the VGS of the transistor 52. The voltage boosts the VTH during an initialization portion during the refresh period before allowing the VTH to settle during a sampling and data programming portion of the refresh period. The VTH of the controlling transistor for the illumination element is boosted to a single level regardless of previous gray scale level and target gray scale level. This boosted VTH level may be set based on a target gray scale level. Additionally or alternatively, the VTH level may be static for any target gray scale level. In some embodiments, a duration of boosting of the VTH for the controlling transistor according to the level of the boosted VTH. In some embodiments, this duration may be determined dynamically along with the boosted level for the VTH that is static or based on the target gray scale level. Additionally or alternatively, the duration may be set to a period that is long enough to accommodate any boosted VTH level that may be used based on target gray scale levels.
As illustrated, the refresh period 126 is divided into an initialization portion 230 and a sampling and data programming portion 232. During the initialization portion 230, VGS is increased as VGS stress by connecting the gate of the controlling transistor 52 to a first voltage (e.g., ELVDD) while connecting the source of the controlling transistor 52 to a second voltage (e.g., Vini). The connection of the source of the transistor 52 may be completed in the circuitry 60 by asserting the scanning signal 70 and the emission signal 80 to couple the source of the transistor 52 to Vini via the transistor 68 and the transistor 78. Asserting the scanning signal 70 and the emission signal 72 via the transistors 71 and 74 may make the connection of the gate of the transistor 52 to ELVDD. In other words, the processors 12 may invoke the initialization portion 230 to assert the stress voltage as VGS on the transistor 52 by asserting the scanning signal 70, the emission signal 72, and the emission signal 80. The amplitude of the stress voltage may be determined based on a target gray scale level. Since the length of the sampling and data programming portion 232 is established, an amount of time for which settling occurs from the boosted VTH to the target VTH is known. The target boosted VTH level 234 may be ascertained (e.g., using a look up for empirical data) using the length of the sampling and data programming portion 232 and a target emission VTH level 236 that is based on a gray scale level to be used during emission. Since the target boosted VTH level 234 is independent of previous gray scale levels, the target emission VTH level is known, and the length of the sampling and data programming portion 232 is predetermined; each target emission VTH level may have a single corresponding target boosted VTH level 234 to result in the target emission VTH level 236 after settling the duration of the sampling and data programming portion 232.
Since the target boosted VTH level 234 may be dynamically determined and previous gray scale levels may also be dynamic, some VTH values may take longer than others to settle to the target boosted VTH level 234. Thus, the duration for the initialization portion 230 may be set to a length that will accommodate a longest possible duration of settling from any possible gray scale level to any possible target boosted VTH level 234. Additionally or alternatively, the length of the initialization portion 230 may be dynamically determined based at least in part on the target boosted VTH level 234 and/or a previous gray scale level to ensure that VTH can settle at the target boosted VTH level 234 prior to the sampling and data programming portion 232. Once the target boosted VTH level 234 is reached, VTH settles to the target emission VTH level 236 during the sampling and data programming portion 232.
During a first portion of a refresh period between two emission periods, the processors 12 cause a controlling transistor for a light emitting diode (LED) to undergo VGS stress (block 304). The processors 12 cause the transistor to be submitted to VGS stress by sending signals to transistors to couple the gate and the source of the transistor to different voltages. In some embodiments, one or more of these voltages are tunable to produce the target boosted VTH level by adjusting the amount of voltage stress under which the transistor is submitted during the first portion of the refresh period. During a second portion of the refresh period, the processors 12 de-assert the VGS stress to settle VTH to the target emission VTH level (block 306). Once the VTH has settled, the processors 12 drive the LED 54 using the transistor 52 based at least in part on the target emission VTH (block 308).
The processors 12 also determine a duration of an assertion of the target boosted VTH level and a previous gray scale level (block 324). The duration may be a length that is suitable to ensure that the VTH can settle to the target boosted VTH level from the VTH level associated with the previous gray scale level.
During a first portion of a refresh period between two emission periods, the processors 12 cause a controlling transistor for a light emitting diode (LED) to undergo VGS stress for the determined duration (block 326). The processors 12 cause the transistor 52 to be submitted to VGS stress by sending signals to transistors to couple the gate and the source of the transistor 52 to different voltages. For example, the processors 12 may cause scanning signal 70 and emission signals 72 and 80 to cause transistors 71 and 74 to couple ELVDD to a gate of the transistor 52 and to cause transistor 68 and transistor 78 to couple Vini to a source of the transistor 52. In some embodiments, one or more of these voltages are tunable to produce the target boosted VTH level by adjusting the amount of voltage stress under which the transistor is submitted during the first portion of the refresh period. During a second portion of the refresh period after the duration has ended, the processors 12 de-assert the VGS stress to settle VTH to the target emission VTH level (block 328). Once the VTH has settled, the processors 12 drive the LED 54 using the transistor 52 based at least in part on the target emission VTH (block 330).
The specific embodiments described above have been shown by way of example, and it should be understood that these embodiments may be susceptible to various modifications and alternative forms. It should be further understood that the claims are not intended to be limited to the particular forms disclosed, but rather to cover all modifications, equivalents, and alternatives falling within the spirit and scope of this disclosure.
This application claims the benefit of U.S. Provisional Application No. 62/398,893, filed on Sep. 23, 2016, the contents of which are herein expressly incorporated by reference for all purposes.
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20180090074 A1 | Mar 2018 | US |
Number | Date | Country | |
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62398893 | Sep 2016 | US |